Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2008
08/19/2008US7413938 Thin film transistor array substrate and method of manufacturing the same
08/19/2008US7413937 Semiconductor device
08/19/2008US7413925 Method for fabricating semiconductor package
08/19/2008US7413916 Light-emitting device and manufacturing method thereof
08/19/2008US7413608 Crystallization apparatus, crystallization method, and phase shifter
08/19/2008US7413604 Process for producing polysilicon film
08/19/2008US7413326 LED lamp
08/19/2008US7412894 Pressure sensing device incorporating pressure sensing chip in resin case
08/14/2008WO2008097779A1 One or multiple-times programmable device
08/14/2008WO2008097551A2 Iii-nitride semiconductor device
08/14/2008WO2008097339A2 Ballistic deflection transistor and logic circuits based on same
08/14/2008WO2008096850A1 Insulating film material for organic thin film transistor and organic thin film transistor using the insulating film material
08/14/2008WO2008096768A1 Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device
08/14/2008WO2008096587A1 Semiconductor device
08/14/2008WO2008096521A1 Semiconductor device
08/14/2008WO2008066588A3 Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions
08/14/2008WO2008063209A3 Optoelectronic devices utilizing materials having enhanced electronic transitions
08/14/2008WO2008057671A3 Electronic device including a conductive structure extending through a buried insulating layer
08/14/2008WO2008054967A3 Method for providing a nanoscale, high electron mobility transistor (hemt) on insulator
08/14/2008WO2008041249A8 Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
08/14/2008WO2008024636A3 Electrical stress protection apparatus and method of manufacture
08/14/2008WO2007081573B1 Vertical dmos device in integrated circuit
08/14/2008US20080194098 Flash memory device and method of manufacturing the same
08/14/2008US20080194084 Method of fabrication of highly heat dissipative substrates
08/14/2008US20080194065 Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the same
08/14/2008US20080192161 Active matrix substrate and display device
08/14/2008US20080191969 Flat panel display
08/14/2008US20080191321 Semiconductor device and method for manufacturing the same
08/14/2008US20080191320 Trench widening without merging
08/14/2008US20080191317 Self-aligned epitaxial growth of semiconductor nanowires
08/14/2008US20080191316 Semiconductor transistor device and method of manufacturing the same
08/14/2008US20080191315 Semiconductor device and method of manufacturing the same
08/14/2008US20080191313 Adaptive radio transceiver with floating mosfet capacitors
08/14/2008US20080191311 Metal-insulator-metal capacitor and fabrication method thereof
08/14/2008US20080191310 By-product removal for wafer bonding process
08/14/2008US20080191307 Semiconductor device
08/14/2008US20080191306 Semiconductor System For Voltage Limitation
08/14/2008US20080191305 Bipolar schottky diode and method
08/14/2008US20080191295 Non-Volatile Magnetic Memory Element with Graded Layer
08/14/2008US20080191294 Sensor device having stopper for limitting displacement
08/14/2008US20080191293 Integrated passive device and method of fabrication
08/14/2008US20080191292 METAL GATES WITH LOW CHARGE TRAPPING AND ENHANCED DIELECTRIC RELIABILITY CHARACTERISTICS FOR HIGH-k GATE DIELECTRIC STACKS
08/14/2008US20080191291 High Voltage CMOS Devices
08/14/2008US20080191290 Semiconductor devices and methods of manufacturing the same
08/14/2008US20080191289 Fabrication of transistors with a fully silicided gate electrode and channel strain
08/14/2008US20080191285 CMOS devices with schottky source and drain regions
08/14/2008US20080191280 N-type carbon nanotube field effect transistor and method of fabricating the same
08/14/2008US20080191279 Thin film transistor, electronic device having the same, and method for manufacturing the same
08/14/2008US20080191278 Semiconductor device, method for manufacturing the same, liquid crystal television, and EL television
08/14/2008US20080191277 Isolated transistor
08/14/2008US20080191276 Semiconductor devices and fabrication methods thereof
08/14/2008US20080191275 Dotted channel mosfet and method
08/14/2008US20080191274 Integrated mosfet and schottky device
08/14/2008US20080191273 Mosfet device having improved avalanche capability
08/14/2008US20080191272 Semiconductor device
08/14/2008US20080191271 Semiconductor device having fins fet and manufacturing method thereof
08/14/2008US20080191270 Nand-Type Non-Volatile Semiconductor Memory Device and Method of Manufacturing the Same
08/14/2008US20080191269 Memory Device with Barrier Layer
08/14/2008US20080191268 Integrated circuit and method of manufacturing an integrated circuit
08/14/2008US20080191267 Nonvolatile Memory Device and Method for Fabricating the Same
08/14/2008US20080191266 Highly reliable NAND flash memory using a five side enclosed floating gate storage elements
08/14/2008US20080191265 Nanoparticles In a Flash Memory Using Chaperonin Proteins
08/14/2008US20080191264 Non-volatile memory devices and methods of operating and fabricating the same
08/14/2008US20080191263 Nonvolatile memory devices and methods of fabricating the same
08/14/2008US20080191262 Non-volatile memory and fabricating method thereof
08/14/2008US20080191261 Nonvolatile memory devices and methods of fabricating the same
08/14/2008US20080191260 Semiconductor Device And Use Thereof
08/14/2008US20080191258 Low voltage coefficient mos capacitors
08/14/2008US20080191257 3-D Channel Field-Effect Transistor, Memory Cell and Integrated Circuit
08/14/2008US20080191254 Method of manufacturing semiconductor device, method of manufacturing semiconductor substrate and semiconductor substrate
08/14/2008US20080191253 Semiconductor device and method for manufacturing the same
08/14/2008US20080191252 Semiconductor device and method for manufacturing the semiconductor device
08/14/2008US20080191250 Transistor Having Coupling-Preventing Electrode Layer, Fabricating Method Thereof, and Image Sensor Having the Same
08/14/2008US20080191248 Scalable Power Field Effect Transistor with Improved Heavy Body Structure and Method of Manufacture
08/14/2008US20080191247 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device
08/14/2008US20080191246 Method to Improve Writer Leakage in a SiGe Bipolar Device
08/14/2008US20080191245 Bipolar Junction Transistor Having A High Germanium Concentration In A Silicon-Germanium Layer And A Method For Forming The Bipolar Junction Transistor
08/14/2008US20080191244 Methods of fabricating integrated circuit devices including strained channel regions and related devices
08/14/2008US20080191243 Semiconductor structure and method of forming the structure
08/14/2008US20080191242 Method For Manufacturing An Electro-Mechanical Component And An Electro-Mechanical Component, Such As A Strained Si Fin-Fet
08/14/2008US20080191239 Multilayer structure and fabrication thereof
08/14/2008US20080191238 Bipolar Mosfet Devices and Methods For Their Use
08/14/2008US20080191222 Ac Light Emitting Diode and Method for Fabricating the Same
08/14/2008US20080191218 Low-Dielectric Constant Cryptocrystal Layers And Nanostructures
08/14/2008US20080191217 Process for forming an interface between silicon carbide and silicon oxide with low density of states
08/14/2008US20080191213 Thin film transistor, thin film transistor substrate including the same and method of manufacturing the same
08/14/2008US20080191212 Thin film transistor array panel and manufacturing methd thereof
08/14/2008US20080191211 Thin film transistor array substrate, method of manufacturing the same, and display device
08/14/2008US20080191208 Pixel circuit and display device
08/14/2008US20080191207 Thin film transistor device, method of manufacturing the same, and display apparatus
08/14/2008US20080191206 Semiconductor device and method of fabricating the same
08/14/2008US20080191204 Thin film transistors and methods of manufacturing the same
08/14/2008US20080191203 Method for Producing Gan Film, Semiconductor Device, Method for Generating Thin Film of Nitride of Group III Element and Semiconductor Device Having Thin Film of Nitride of Group III Element
08/14/2008US20080191196 Nanowire heterostructures
08/14/2008US20080191195 Nitride semiconductor device
08/14/2008US20080191193 In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
08/14/2008US20080191189 array of nanotubes emits electrons into vacuum when electrons gain sufficient energy inside the nanotubes due to ballistic electron movement under the voltage applied to the nanotube ends; new type of electron-emission display when a phosphor layer is deposited on the anode electrode
08/14/2008DE112006002668T5 Copolymer und polymere lichtemittierende Vorrichtung unter Verwendung desselben Of the same copolymer and polymer light emitting device using
08/14/2008DE112006002590T5 Formspeicherbauelement Shape memory device
08/14/2008DE112004002634B4 Integrierte Schaltung, Verfahren zur Herstellung einer integrierten Schaltung und Verfahren zur Herstellung flacher Grabenisolationsstrukturen Integrated circuit A method of manufacturing an integrated circuit and method for manufacturing flat grave isolation structures
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