Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2008
08/28/2008US20080203471 Nitride semiconductor device and method for producing nitride semiconductor device
08/28/2008US20080203470 Lateral compensation component
08/28/2008US20080203468 FinFET with Reduced Gate to Fin Overlay Sensitivity
08/28/2008US20080203467 Nrom flash memory devices on ultrathin silicon
08/28/2008US20080203466 Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
08/28/2008US20080203464 Electrically alterable non-volatile memory and array
08/28/2008US20080203463 Non-Volatile Memory with Erase Gate on Isolation Zones
08/28/2008US20080203462 Finfet-Based Non-Volatile Memory Device
08/28/2008US20080203461 Gate structure of nand flash memory having insulators each filled with between gate electrodes of adjacent memory cells and manufacturing method thereof
08/28/2008US20080203460 Manufacturing method for a nanocrystal based device covered with a layer of nitride deposited by cvd
08/28/2008US20080203458 Semiconductor Memory Device and Method of Fabricating the Same
08/28/2008US20080203457 Fast switching power insulated gate semiconductor device
08/28/2008US20080203453 Semiconductor structures and memory device constructions
08/28/2008US20080203449 Source/drain stressor and method therefor
08/28/2008US20080203448 Stressed dielectric devices and methods of fabricating same
08/28/2008US20080203447 Low-temperature electrically activated gate electrode and method of fabricating same
08/28/2008US20080203446 Composite contact for semiconductor device
08/28/2008US20080203445 Three-Dimensional Cascaded Power Distribution in a Semiconductor Device
08/28/2008US20080203444 Multi-finger transistor and method of manufacturing the same
08/28/2008US20080203441 SiC semiconductor device and method for manufacturing the same
08/28/2008US20080203440 Semiconductor device fabrication method and semiconductor device fabricated thereby
08/28/2008US20080203434 Semiconductor Device with a Bipolar Transistor and Method of Manufacturing Such a Device
08/28/2008US20080203433 High electron mobility transistor and method of forming the same
08/28/2008US20080203432 Semiconductor device and method for fabricating the same
08/28/2008US20080203430 Enhancement mode insulated gate heterostructure field-effect transistor
08/28/2008US20080203429 Semiconductor Device and a Method of Manufacturing the Same
08/28/2008US20080203428 Mos transistors having recessed channel regions and methods of fabricating the same
08/28/2008US20080203427 Semiconductor device having a strained semiconductor alloy concentration profile
08/28/2008US20080203426 Heterojunction semiconductor device and method of manufacturing
08/28/2008US20080203408 PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS
08/28/2008US20080203403 Semiconductor integrated circuit
08/28/2008US20080203402 SiC semiconductor device and method for manufacturing the same
08/28/2008US20080203401 Method for manufacturing semiconductor device and semiconductor device manufactured therefrom
08/28/2008US20080203400 Semiconductor device and method of manufacturing same
08/28/2008US20080203399 Polarization doped transistor channels in sic heteropolytypes
08/28/2008US20080203398 Silicon carbide self-aligned epitaxial MOSFET and method of manufacturing thereof
08/28/2008US20080203395 Semiconductor device and manufacturing method thereof
08/28/2008US20080203390 Method for manufacturing a signal line, thin film transistor panel, and method for manufacturing the thin film transistor panel
08/28/2008US20080203389 Semiconductor apparatus having temperature sensing diode
08/28/2008US20080203387 Thin film transistor and method of manufacturing the same
08/28/2008US20080203385 Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
08/28/2008US20080203382 Semiconductor wafer, devices made therefrom, and method of fabrication
08/28/2008US20080203381 Forming arsenide-based complementary logic on a single substrate
08/28/2008US20080203380 Carbon nanotubes (CNT); placing catalyst between two metal layers of high chemical potential on substrate, depositing on wafer, and reactivating in high vacuum at room temperature; photolithography
08/28/2008US20080203055 Method of forming one or more nanopores for aligning molecules for molecular electronics
08/28/2008DE20023985U1 Barrierenschichten für ferroelektrische Speichervorrichtungen Barrier layers for ferroelectric memory devices
08/28/2008DE19964480B4 Verfahren zum Herstellen einer nichtflüchtigen ferroelektrischen Speicherzelle vom NAND-Typ A method of manufacturing a non-volatile ferroelectric memory cell of the NAND type
08/28/2008DE112006002626T5 Halbleitersubstrat und Verfahren zu dessen Herstellung Semiconductor substrate and process for its preparation
08/28/2008DE112006001735T5 Blockkontaktarchitekturen für Transistoren mit Kanälen in einer Nano-Größenordnung Contact block architectures for transistors with channels in a nano-scale
08/28/2008DE10350684B4 Verfahren zur Herstellung einer Leistungstransistoranordnung und mit diesem Verfahren hergestellte Leistungstransistoranordnung A method of manufacturing a power transistor device and produced by this method power transistor device
08/28/2008DE10329088B4 Flachdisplay zur Anwendung bei einem kleinen Modul Flat-panel display for use in a small module
08/28/2008DE102008010321A1 Integrierte Schaltung mit Superjunctionhalbleiterelement Integrated circuit with Super Junction semiconductor element
08/28/2008DE102008008752A1 Halbleitervorrichtung und Herstellungsverfahren dafür A semiconductor device and manufacturing method thereof
08/28/2008DE102007043341A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
08/28/2008DE102007009839A1 Hydride vapor phase epitaxy method for producing aluminum gallium indium nitride mono-crystal, used in optoelectronics, particularly for ight-emitting diodes, involves utilizing mixture of aluminum, gallium and indium metals
08/28/2008DE102007009412A1 Hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in laser diode, comprises converting mixture of aluminum, gallium and indium metals having hydrogen compounds of halogens to halides
08/28/2008DE102007009227A1 Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben Of the same semiconductor device with rectifying junctions, as well as manufacturing method for manufacturing
08/28/2008DE102007008777A1 Halbleiterbauelement mit Zellenstruktur und Verfahren zur Herstellung desselben Of the same semiconductor device with cell structure and methods for preparing
08/28/2008DE102007008562A1 Feldeffekttransistor-Anordnung Field effect transistor arrangement
08/28/2008DE102006030264B4 Verfahren zur Herstellung von Transistoren mit einem Kanal mit biaxialer Verformung, die durch Silizium/Germanium in der Gateelektrode hervorgerufen wird A process for the fabrication of transistors with a channel having biaxial deformation is caused by silicon / germanium in the gate electrode
08/27/2008EP1962347A1 Schottky barrier diode and method for using the same
08/27/2008EP1962338A1 Field effect transistor
08/27/2008EP1962330A2 Method for manufacturing SIC semiconductor device
08/27/2008EP1961046A1 Phosphors protected against moisture and led lighting devices
08/27/2008EP1961040A2 Memory cell having stressed layers
08/27/2008EP1961038A1 Mos transistor with better short channel effect control and corresponding manufacturing method
08/27/2008EP1719155B1 Semiconductor device and method using nanotube contacts
08/27/2008EP1683187A4 Stressed semiconductor device structures having granular semiconductor material
08/27/2008EP1248952B1 Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same
08/27/2008EP1240530B1 Micromechanical structure, in particular for an acceleration sensor
08/27/2008CN101253805A No title available
08/27/2008CN101253633A Silicon carbide semiconductor device and method for producing the same
08/27/2008CN101253632A Semiconductor device including a strained superlattice on stress regions and associated methods
08/27/2008CN101253631A Thin film resistor and method of making the same
08/27/2008CN101253622A Capacitorless DRAM on bulk silicon
08/27/2008CN101253618A Thin-film element, display device and memory cell using the thin-film element, and their fabrication method
08/27/2008CN101253611A 薄膜晶体管阵列衬底的制造方法、及薄膜晶体管阵列衬底 The method of manufacturing a thin film transistor array substrate and a thin film transistor array substrate,
08/27/2008CN101253610A Transistor, organic semiconductor device, and method of manufacturing same
08/27/2008CN101253609A Transistor and method of manufacturing same, and semiconductor device having the same
08/27/2008CN101253608A Process for forming an electronic device including discontinuous storage elements
08/27/2008CN101253602A Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
08/27/2008CN101253447A Thin-film transistor substrate and display device
08/27/2008CN101253282A Film-forming method and film-forming apparatus
08/27/2008CN101252151A Nanometer silicium hetero-junction pressure-sensitive diode and nanometer silicium hetero-junction pressure sensor
08/27/2008CN101252150A Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
08/27/2008CN101252149A Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof
08/27/2008CN101252148A Nonvolatile memory electronic device
08/27/2008CN101252147A High voltage device
08/27/2008CN101252146A Semiconductor structure and manufacture method thereof
08/27/2008CN101252145A Carbon nanometer tube nano electronic device and manufacturing method thereof
08/27/2008CN101252132A Semiconductor memory device and fabrication process thereof
08/27/2008CN101252131A Current mirroring circuit
08/27/2008CN101252104A Methods of forming wiring to transistor and related transistor
08/27/2008CN101252077A Method for manufacturing semiconductor device and semiconductor device
08/27/2008CN100415063C El display device, driving method thereof, and electronic equipment provided with the display device
08/27/2008CN100414734C Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
08/27/2008CN100414724C Light emitting device
08/27/2008CN100414717C Over-voltage protection device and process for making same
08/27/2008CN100414716C Magnetic switching device and magnetic memory using the same
08/27/2008CN100414715C Thin film transistor and its forming method
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