Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2008
08/21/2008WO2008079077A3 Nanoelectronic structure and method of producing such
08/21/2008WO2008061166A3 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
08/21/2008WO2007112171A3 Semiconductor device and method for forming the same
08/21/2008WO2007095604A3 Multiple die integrated circuit package
08/21/2008WO2007001672A3 Growth of heterojunction bipolar trasistor stacks by remote injection
08/21/2008US20080201682 Method of designing wiring structure of semiconductor device and wiring structure designed accordingly
08/21/2008US20080200677 Ionic complex; light emitting diodes; electronics
08/21/2008US20080200024 Semiconductor device and method for fabricating the same
08/21/2008US20080200021 SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK
08/21/2008US20080200013 Gallium nitride materials and methods associated with the same
08/21/2008US20080199997 Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semiconductor Devices
08/21/2008US20080199788 photo mask has different shapes depending on the desired thickness of the photoresist film to be formed in the translucent areas, it allow different amounts of light to pass through translucent areas, while thickness of the photoresist film that remains after light exposure is constant, reduces cost
08/21/2008US20080199649 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
08/21/2008US20080198885 Low creep metallization for optoelectronic applications
08/21/2008US20080198299 Light source unit, liquid crystal display having the same, and method thereof
08/21/2008US20080198108 Array substrate and display unit using it and production method for array substrate
08/21/2008US20080197498 Gate Electrode Silicidation Process
08/21/2008US20080197457 Silicon wafer and its manufacturing method
08/21/2008US20080197454 Method and system for removing impurities from low-grade crystalline silicon wafers
08/21/2008US20080197453 Semiconductor device and manufacturing method of the same
08/21/2008US20080197452 gallium nitride or indium gallium nitride or aluminum gallium nitride single crystal substrate; diameter not less than 25.4 mm; thickness not less than 150 mu m.; substrate satisfies that a ratio of Delta alpha / alpha is not more than 0.1; light emitting diodes; high quality; heat resistance
08/21/2008US20080197451 High-voltage variable breakdown voltage (BV) diode for electrostatic discharge (ESD) applications
08/21/2008US20080197450 Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
08/21/2008US20080197448 SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
08/21/2008US20080197443 Semiconductor Substrate Comprising a Pn-Junction and Method For Producing Said Substrate
08/21/2008US20080197442 Semiconductor component with cell structure and method for producing the same
08/21/2008US20080197440 Nonvolatile Memory
08/21/2008US20080197439 Semiconductor Device And Method For Manufacturing Same
08/21/2008US20080197436 Electronic device, method for manufacturing the same, and silicon substrate for electronic device
08/21/2008US20080197434 Magnetic memory device
08/21/2008US20080197433 Memory device and memory
08/21/2008US20080197432 Microchip Assembly Produced by Transfer Molding
08/21/2008US20080197431 Magnetic memory element and magnetic memory apparatus
08/21/2008US20080197429 Semiconductor device and method of manufacturing same
08/21/2008US20080197428 Gate Electrode Structure, MOS Field Effect Transistors and Methods of Manufacturing the Same
08/21/2008US20080197427 Method of forming double gate dielectric layers and semiconductor device having the same
08/21/2008US20080197426 Method for manufacturing insulated gate field effect transistor
08/21/2008US20080197425 Semiconductor device
08/21/2008US20080197424 Semiconductor structure including gate electrode having laterally variable work function
08/21/2008US20080197423 Device and method for reducing a voltage dependent capacitive coupling
08/21/2008US20080197422 Planar combined structure of a bipolar junction transistor and N-type/P-type metal semiconductor field-effect transistors and method for forming the same
08/21/2008US20080197421 Semiconductor device and method for manufacturing the same
08/21/2008US20080197419 Cell structure for dual port SRAM
08/21/2008US20080197418 Gate pullback at ends of high-voltage vertical transistor structure
08/21/2008US20080197417 Segmented pillar layout for a high-voltage vertical transistor
08/21/2008US20080197414 Method of forming a thin film component
08/21/2008US20080197413 Thin film transistor and method of manufacturing the same
08/21/2008US20080197412 Multi-layer source/drain stressor
08/21/2008US20080197411 Mos transistor device in common source configuration
08/21/2008US20080197410 High voltage device with low on-resistance
08/21/2008US20080197409 Superjunction power mosfet
08/21/2008US20080197408 Isolated quasi-vertical DMOS transistor
08/21/2008US20080197407 Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture
08/21/2008US20080197405 Trench diffusion isolation in power transistors
08/21/2008US20080197404 Method of fabricating semiconductor memory device and semiconductor memory device
08/21/2008US20080197402 Methods of Forming Nonvolatile Memory Devices and Memory Devices Formed Thereby
08/21/2008US20080197400 Transistor constructions and processing methods
08/21/2008US20080197399 Nanotip capacitor
08/21/2008US20080197398 Semiconductor device and method of manufacturing the same
08/21/2008US20080197397 Checkerboarded high-voltage vertical transistor layout
08/21/2008US20080197396 Gate metal routing for transistor with checkerboarded layout
08/21/2008US20080197395 Semiconductor device
08/21/2008US20080197394 Methods of manufacturing semiconductor structures
08/21/2008US20080197391 Semiconductor device and method of manufacturing the same
08/21/2008US20080197385 Insulated gate field effect transistor and method of manufacturing same, and image pickup device and method of manufacturing same
08/21/2008US20080197384 Field Effect Transistor Arrangement
08/21/2008US20080197383 Method of manufacturing a semiconductor element and semiconductor element
08/21/2008US20080197382 Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures and methods of fabricating the same
08/21/2008US20080197381 Semiconductor device and method for manufacturing same
08/21/2008US20080197380 Semiconductor component comprising a drift zone and a drift control zone
08/21/2008US20080197379 Semiconductor device and manufacturing method thereof
08/21/2008US20080197378 Group III Nitride Diodes on Low Index Carrier Substrates
08/21/2008US20080197370 Light emitting diode structure and manufacturing method thereof
08/21/2008US20080197361 Insulated gate silicon carbide semiconductor device and method for manufacturing the same
08/21/2008US20080197360 Diode Having Reduced On-resistance and Associated Method of Manufacture
08/21/2008US20080197359 Compound semiconductor device and method of manufacturing the same
08/21/2008US20080197358 Wide-bandgap semiconductor devices
08/21/2008US20080197357 Display panel and manufacturing method
08/21/2008US20080197355 Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus
08/21/2008US20080197354 Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof
08/21/2008US20080197350 Thin film transistor and method of forming the same
08/21/2008US20080197349 Manufacturing method of thin-film transistor, thin film transistor sheet, and electric circuit
08/21/2008US20080197339 Silicon chip and nanolever comprise multiwalled carbon nanotubes and atom reservoir and indium nanoparticle ram
08/21/2008US20080197338 Bottom electrode for memory device and method of forming the same
08/21/2008US20080196752 Apparatus and method for cleaning a glass substrate before photoresist coating
08/21/2008DE19956735B4 Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung Thin film solar cell with a chalcopyrite compound and a titanium and oxygen containing compound
08/21/2008DE10334079B4 Transistormodul Transistor module
08/21/2008DE102008008867A1 Halbleitertransistorvorrichtung und Verfahren zum Herstellen derselben A semiconductor transistor device and method of manufacturing the same
08/21/2008DE102007008264A1 Circuit arrangement has bi-directional gate semiconductor relay which is self-closing metal-oxide-semiconductor field-effect transistor, where bulk contact lies at fixed position, and is separated form source contact
08/21/2008DE10113967B4 Leistungsmodule Power Modules
08/20/2008EP1959501A2 Power semiconductor device
08/20/2008EP1959500A2 High-voltage vertical FET
08/20/2008EP1959499A2 Semiconductor device with vertical field-effect transistor and current-sensing field-effect transistor
08/20/2008EP1959498A2 High-voltage vertical FET
08/20/2008EP1959497A2 High-voltage vertical FET
08/20/2008EP1959496A2 High-voltage vertical FET
08/20/2008EP1959495A1 Trench gate power semiconductor device
08/20/2008EP1959492A1 Semiconductor device
08/20/2008EP1958264A1 Metal semiconductor field effect transistors (mesfets) having channels of varying thicknesses and related methods
08/20/2008EP1958263A1 Multi-operational mode transistor with multiple-channel device structure
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