| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/04/2008 | US20080211022 Semiconductor device having a triple gate transistor and method for manufacturing the same |
| 09/04/2008 | US20080211021 Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture |
| 09/04/2008 | US20080211020 Semiconductor apparatus |
| 09/04/2008 | US20080211017 Semiconductor Device |
| 09/04/2008 | US20080211016 Trench mosgated device with deep trench between gate trenches |
| 09/04/2008 | US20080211015 Method of manufacturing a semiconductor power device |
| 09/04/2008 | US20080211014 Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
| 09/04/2008 | US20080211013 Semiconductor memory device with vertical channel transistor and method of fabricating the same |
| 09/04/2008 | US20080211011 Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device |
| 09/04/2008 | US20080211010 Semiconductor device |
| 09/04/2008 | US20080211008 Manufacturing method of flash memory device |
| 09/04/2008 | US20080211004 Semiconductor device and method for manufacturing the same |
| 09/04/2008 | US20080211000 Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof |
| 09/04/2008 | US20080210998 Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof |
| 09/04/2008 | US20080210988 Insulated-gate field effect transistor |
| 09/04/2008 | US20080210987 Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes |
| 09/04/2008 | US20080210981 Integrated Circuit Having Gates and Active Regions Forming a Regular Grating |
| 09/04/2008 | US20080210977 Semiconductor device having a support substrate partially having metal part extending across its thickness |
| 09/04/2008 | US20080210976 Semiconductor Device Having an Implanted Precipitate Region and a Method of Manufacture Therefor |
| 09/04/2008 | US20080210975 Method of fabricating heteroepitaxial microstructures |
| 09/04/2008 | US20080210974 High voltage LDMOS |
| 09/04/2008 | US20080210959 Light emitting apparatus |
| 09/04/2008 | US20080210950 Diamond-like carbon electronic devices and methods of manufacture |
| 09/04/2008 | US20080210949 Semiconductor substrate and semiconductor device using the same |
| 09/04/2008 | US20080210948 High-Heat-Resistive Semiconductor Device |
| 09/04/2008 | US20080210945 Thin film transistor, manufacturing method thereof, and semiconductor device |
| 09/04/2008 | US20080210943 Thin film transistor array panel and manufacturing method thereof |
| 09/04/2008 | US20080210941 Dispaly device |
| 09/04/2008 | US20080210938 Semiconductor device |
| 09/04/2008 | US20080210937 Hetero-Crystalline Structure and Method of Making Same |
| 09/04/2008 | US20080210936 Hetero-Crystalline Semiconductor Device and Method of Making Same |
| 09/04/2008 | US20080210934 Semiconductor Device Using Titanium Dioxide as Active Layer and Method for Producing Semiconductor Device |
| 09/04/2008 | US20080210927 Buffer architecture formed on a semiconductor wafer |
| 09/04/2008 | US20080210926 Three-dimensional phase-change memory array |
| 09/04/2008 | DE112004000661T5 Integrierte Schaltung mit einem magnetisch ummantelten Leiter An integrated circuit comprising a magnetically coated conductor |
| 09/04/2008 | DE10326158B4 Halbleiterspeicherbauelement mit einem vertikalen Zugriffstransistor mit gekrümmtem Kanal und Verfahren zum Ausbilden eines vertikalen Zugriffstransistors für ein Speicherbauelement The semiconductor memory device with a vertical access transistor with a curved channel and method for forming a vertical access transistor for a memory device |
| 09/04/2008 | DE10312238B4 Leistungshalbleitereinrichtung Power semiconductor device |
| 09/04/2008 | DE10255359B4 Transistor mit Füllbereichen im Source- und/oder Draingebiet Transistor with area fills in source and / or drain region |
| 09/04/2008 | DE102008011648A1 SIC-Halbleitervorrichtung und Verfahren zu deren Fertigung SiC semiconductor device, and methods for their production |
| 09/04/2008 | DE102007013978A1 3D-Kanal Feldeffekttransistor, Speicherzelle und integrierter Schaltkreis 3D-channel field effect transistor memory cell and an integrated circuit |
| 09/04/2008 | DE102007009727A1 Method for manufacturing semiconductor component, involves preparing semiconductor substrate with active area and boundary area, which is adjacent to active area, where active area has conducting material having trenches |
| 09/04/2008 | DE10130237B4 Kapazitiver Sensor für dynamische Größen mit Verschiebungsabschnitt, hergestellt durch Drahtbonden Capacitive sensor for dynamic variables with shift section made by wire bonding |
| 09/04/2008 | DE10041344B4 SJ-Halbleitervorrichtung SJ-semiconductor device |
| 09/03/2008 | EP1965437A1 Nano-scale transistor device with large current handling capability |
| 09/03/2008 | EP1965436A2 Silicon carbide self-aligned epitaxial mosfet and method of manufacturing thereof |
| 09/03/2008 | EP1965435A1 Semiconductor device and method for manufacturing same |
| 09/03/2008 | EP1965434A2 Compound semiconductor device and doherty amplifier using compound semiconductor device |
| 09/03/2008 | EP1965433A2 High voltage GaN transistors |
| 09/03/2008 | EP1965432A1 Insulated gate bipolar transistor and method of manufacturing the same |
| 09/03/2008 | EP1965431A2 Heterojunction bipolar transistor and method for fabricating the same |
| 09/03/2008 | EP1965430A2 Sic semiconductor device and method for manufacturing the same |
| 09/03/2008 | EP1965415A2 Method for manufacturing a semiconductor device and semiconductor device manufactured therefrom |
| 09/03/2008 | EP1964179A1 Reduced-resistance finfets and methods of manufacturing the same |
| 09/03/2008 | EP1964178A2 Mos transistor and a method of manufacturing a mos transistor |
| 09/03/2008 | EP1964177A2 Semiconductor devices and manufacturing method thereof |
| 09/03/2008 | EP1964170A2 Flash devices with shared word lines and manufacturing methods therefor |
| 09/03/2008 | EP1964169A1 Integration of planar and tri-gate devices on the same substrate |
| 09/03/2008 | EP1964164A2 Field effect transistor structure with an insulating layer at the junction |
| 09/03/2008 | EP1908111A4 Virtual body-contacted trigate |
| 09/03/2008 | EP1673811A4 Low noise charge amplification ccd |
| 09/03/2008 | EP1671376A4 SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK |
| 09/03/2008 | EP1656702B1 Method for producing vertical nano-transistor |
| 09/03/2008 | EP1487738B1 Silicon carbide microelectromechanical devices with electronic circuitry |
| 09/03/2008 | EP1389345A4 Chip scale package with flip chip interconnect |
| 09/03/2008 | EP1378006B1 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
| 09/03/2008 | EP1292726B1 Single crystal diamond prepared by cvd |
| 09/03/2008 | EP1228533B1 Method of manufacturing a bipolar transistor semiconductor device |
| 09/03/2008 | EP1142014B1 A method of manufacturing a peripheral transistor of a non-volatile memory |
| 09/03/2008 | EP0885483B1 Push-pull power amplifier |
| 09/03/2008 | CN201111304Y Embedded type flash memory unit structure |
| 09/03/2008 | CN101258608A Semiconductor device and method of fabricating semiconductor device |
| 09/03/2008 | CN101258607A Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous |
| 09/03/2008 | CN101258606A Semiconductor device |
| 09/03/2008 | CN101258605A Semiconductor device manufacturing method |
| 09/03/2008 | CN101258604A Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions and associated methods |
| 09/03/2008 | CN101258603A Semiconductor device including a superlattice having at least one group of substantially undoped layer |
| 09/03/2008 | CN101258602A Semiconductor device comprising a superlattice dielectric interface layer |
| 09/03/2008 | CN101258601A Bipolar method and structure with depletable collector colums |
| 09/03/2008 | CN101258588A Method of manufacturing a semiconductor power device |
| 09/03/2008 | CN101258587A Semiconductor power device with multiple drain structure and corresponding manufacturing process |
| 09/03/2008 | CN101258582A 功率场效应晶体管及其制造方法 A power field effect transistor and manufacturing method thereof |
| 09/03/2008 | CN101258580A Semiconductor device, method for manufacturing same, and display |
| 09/03/2008 | CN101257743A Light emitting device, method of driving a light emitting device |
| 09/03/2008 | CN101257300A Adjustable transistor body bias circuit |
| 09/03/2008 | CN101257079A Semiconductor layer |
| 09/03/2008 | CN101257051A Semiconductor device and method for fabricating the same |
| 09/03/2008 | CN101257050A Nanometer silicon hetero-junction bidirectional tunneling diode |
| 09/03/2008 | CN101257049A Thin-film transistor, active array substrate and manufacturing method thereof |
| 09/03/2008 | CN101257048A Thin film transistor and method of manufacturing the same |
| 09/03/2008 | CN101257047A High pressure resistant lateral direction bilateral diffusion MOS transistor |
| 09/03/2008 | CN101257046A Semiconductor device and its manufacturing method |
| 09/03/2008 | CN101257045A Semiconductor device and method of fabricating the same |
| 09/03/2008 | CN101257044A Bipolar transistor using selective dielectric deposition and methods for fabrication thereof |
| 09/03/2008 | CN101257043A Semiconductor device and method of fabricating the same |
| 09/03/2008 | CN101257042A Semiconductor device |
| 09/03/2008 | CN101257041A Low-temperature sol-gel silicates as dielectrics or planarization layer for thin film transistors |
| 09/03/2008 | CN101257040A Semiconductor device with gate stack structure |
| 09/03/2008 | CN101257039A Semiconductor structure and manufacturing method thereof |
| 09/03/2008 | CN101257033A Image sensor |
| 09/03/2008 | CN101257032A Thin film transistor array substrate, method of manufacturing the same, and display device |