Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2009
03/19/2009US20090072333 Sensor array having a substrate and a housing, and method for manufacturing a sensor array
03/19/2009US20090072332 System-in-package platform for electronic-microfluidic devices
03/19/2009US20090072331 Semiconductor device and manufacturing method thereof
03/19/2009US20090072330 Semiconductor device and manufacturing method thereof
03/19/2009US20090072329 Semiconductor device and method of manufacturing the same
03/19/2009US20090072328 Semiconductor device and method of fabricating the same
03/19/2009US20090072327 Semiconductor Storage Device and Method for Manufacturing the Same
03/19/2009US20090072326 Ultra high voltage mos transistor device
03/19/2009US20090072325 Metal-oxide semiconductor transistor
03/19/2009US20090072324 Semiconductor device having an elevated source/drain structure of varying cross-section
03/19/2009US20090072321 Thin film transistor, semiconductor device, and method for manufacturing the same
03/19/2009US20090072319 Semiconductor device with relatively high breakdown voltage and manufacturing method
03/19/2009US20090072318 Semiconductor Device and Method of Fabricating the Same
03/19/2009US20090072317 Microelectronic structure by selective deposition
03/19/2009US20090072316 Double layer stress for multiple gate transistors
03/19/2009US20090072314 Depletion Mode Field Effect Transistor for ESD Protection
03/19/2009US20090072311 MOS transistor and manufacturing method thereof
03/19/2009US20090072310 Semiconductor structure including high voltage device
03/19/2009US20090072308 Laterally diffused metal-oxide-semiconductor device and method of making the same
03/19/2009US20090072306 Semiconductor device and method of manufacturing semiconductor device
03/19/2009US20090072304 Trench misfet
03/19/2009US20090072303 Nrom memory cell, memory array, related devices and methods
03/19/2009US20090072302 Gate metal routing for transistor with checkerboarded layout
03/19/2009US20090072301 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
03/19/2009US20090072299 Semiconductor device having high voltage mos transistor and fabrication method thereof
03/19/2009US20090072297 Multibit electro-mechanical memory device and method of manufacturing the same
03/19/2009US20090072296 Multibit electro-mechanical device and method of manufacturing the same
03/19/2009US20090072295 Flash EEPROM device and method for fabricating the same
03/19/2009US20090072294 Method of manufacturing a non-volatile memory device
03/19/2009US20090072293 Flash Memory and Method for Manufacturing the Same
03/19/2009US20090072292 Semiconductor device and method of making semiconductor device
03/19/2009US20090072289 Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
03/19/2009US20090072286 Semiconductor device and its manufacturing method
03/19/2009US20090072280 Pmos transistor with increased effective channel length in the peripheral region and method of manufacturing the same
03/19/2009US20090072279 Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
03/19/2009US20090072278 Method for Applying a Stress Layer to a Semiconductor Device and Device Formed Therefrom
03/19/2009US20090072277 System and Method for Enabling Higher Hole Mobility in a JFET
03/19/2009US20090072273 Iii-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture
03/19/2009US20090072272 Enhancement mode gallium nitride power devices
03/19/2009US20090072271 EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTILIZING AN INTERFACIAL SILICON GERMANIUM (SiGe) PULSE GROWTH METHOD
03/19/2009US20090072270 Low voltage transistors
03/19/2009US20090072269 Gallium nitride diodes and integrated components
03/19/2009US20090072268 Semiconductor device
03/19/2009US20090072266 Semiconductor light emitting device
03/19/2009US20090072244 Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
03/19/2009US20090072243 Compound semiconductor device and method for fabricating compound semiconductor
03/19/2009US20090072242 Insulated Gate Bipolar Conduction Transistors (IBCTS) and Related Methods of Fabrication
03/19/2009US20090072241 Grid-umosfet with electric field shielding of gate oxide
03/19/2009US20090072240 III-Nitride Devices with Recessed Gates
03/19/2009US20090072239 Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite
03/19/2009US20090072238 Insulated gate field effect semiconductor devices and method of manufacturing the same
03/19/2009US20090072237 Method for manufacturing thin film transistor and display device including the thin film transistor
03/19/2009US20090072235 Electronic device having liquid crystal display device
03/19/2009US20090072233 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
03/19/2009US20090072232 Thin-Film Transistor and Display Device using Oxide Semiconductor
03/19/2009US20090072230 Gas-barrier film and organic device comprising same
03/19/2009US20090072229 Thin film transistor, method of fabricating the thin film transistor, organic light emitting diode display device, method of fabricating the organic light emitting diode display device, and donor substrate for laser induced thermal imaging
03/19/2009US20090072227 Organic compound crystal and field-effect transistor
03/19/2009US20090072223 Field effect transistor using carbon nanotube, method of fabricating same, and sensor
03/19/2009US20090072222 Method for forming catalyst nanoparticles for growing elongated nanostructures
03/19/2009US20090072221 Nitride semiconductor device and method for fabricating the same
03/19/2009US20090072219 MOS transistor on the basis of quantum interferance effect
03/19/2009US20090072214 Phase-change memory cell and method of fabricating the phase-change memory cell
03/19/2009US20090072210 Switching device
03/19/2009US20090071826 Anion concentration measuring device and anion concentration measuring element
03/19/2009US20090071251 Acceleration sensor
03/19/2009US20090071249 Acceleration sensor-attached tire
03/19/2009DE19811297B4 MOS-Halbleitervorrichtung mit hoher Durchbruchspannung MOS type semiconductor device with high breakdown voltage
03/19/2009DE19804568B4 Vorrichtung bestehend aus einem Feldeffekttransistor (FET) in Verbindung mit einer Vorspannungs-Versorgungseinrichtung und einem kapazitiven Element und Verfahren zu deren Ansteuerung Device consisting of a field effect transistor (FET) in conjunction with a bias supply means, and a capacitive element and driving method thereof
03/19/2009DE19534388B4 IGBT-Transistorbauteil IGBT transistor device
03/19/2009DE10316552B4 Verfahren zur Herstellung einer Erkennungsvorrichtung für eine dynamische Größe A method for preparing a detection device for dynamic quantity
03/19/2009DE102007044414A1 Semiconductor component e.g. MOS field effect transistor, has intermediate zones arranged on ditch walls, where intermediate zones are high-impedance with respect to loading compensation zones and drift zones
03/19/2009DE102007044209A1 Compensation element e.g. planar transistor, has compensation zones arranged in direction transverse to current flow direction offset to zones in adjacent section in current flow direction
03/19/2009DE102007043360A1 Elektronisches Bauelement, Verfahren zu seiner Herstellung und seine Verwendung Electronic component, process for its preparation and its use
03/19/2009DE102006060384B4 Halbleitervorrichtung mit Super-Junction-Struktur Semiconductor device with super junction structure
03/19/2009DE102004060365B4 Bauelement mit Halbleiterübergang und Verfahren zur Herstellung Component with a semiconductor junction and methods for preparing
03/19/2009DE102004055640B4 LDMOS-Transistorvorrichtung, Integrierter Schaltkreis und Herstellungsverfahren hiervon LDMOS transistor device, integrated circuit and manufacturing method thereof
03/19/2009CA2702851A1 Nanotube enabled, gate-voltage controlled light emitting diodes
03/18/2009EP2037506A1 Variable period, variable composition superlattice and devices including the same
03/18/2009EP2037496A1 Semiconductor device and semiconductor manufacturing method
03/18/2009EP2037492A1 Multiple gate field effect transistor structure and method for fabricating same
03/18/2009EP2037491A1 METHOD OF FORMING TaSiN FILM
03/18/2009EP2037434A1 Tft substrate, display panel and display device provided with such tft substrate, and tft substrate manufacturing method
03/18/2009EP2037285A1 Combined sensor
03/18/2009EP2036900A1 Smectic liquid crystal compound
03/18/2009EP2036130A2 N-channel mosfets comprising dual stressors, and methods for forming the same
03/18/2009EP2036129A2 Bidirectional buffer with slew rate control and method of bidirectionally transmitting signals with slew rate control
03/18/2009EP2035584A2 Nanosensors and related technologies
03/18/2009EP1502308A4 Enhanced cutoff frequency silicon germanium transistor
03/18/2009CN101390253A Ceramic antenna module and methods of manufacture thereof
03/18/2009CN101390217A Flip-chip device having underfill in controlled gap
03/18/2009CN101390216A An oxygen enhanced metastable silicon germanium film layer
03/18/2009CN101390215A Junction structure of device
03/18/2009CN101390214A High efficiency light-emitting diodes
03/18/2009CN101390212A One-time programmable crosspoint memory with a diode as an antifuse
03/18/2009CN101390201A Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
03/18/2009CN101389634A Fluorine-containing compound and method for producing same, fluorine-containing polymer, organic thin film, and organic thin film device
03/18/2009CN101388663A Level shift circuit
03/18/2009CN101388416A Nonvolatile semiconductor storage device and manufacturing method thereof
03/18/2009CN101388415A Non-volatile memory and preparation thereof
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