Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2009
03/26/2009WO2009039298A2 Sensors using aigan/gan high electron mobility transistors
03/26/2009WO2009039129A2 Pressure sensor stress isolation pedestal
03/26/2009WO2009039041A2 Enhancement mode gallium nitride power devices
03/26/2009WO2009039028A2 Gallium nitride diodes and integrated components
03/26/2009WO2009039014A1 Edge termination high voltage semiconductor device
03/26/2009WO2009038977A1 System and method for enabling higher hole mobility in a jfet
03/26/2009WO2009038809A1 Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain
03/26/2009WO2009038610A1 Insulated gate bipolar conduction transistors (ibcts) and related methods of fabrication
03/26/2009WO2009038606A2 Transparent nanowire transistors and methods for fabricating same
03/26/2009WO2009038120A1 Field effect transistor
03/26/2009WO2009037910A1 Magnetic random access memory, its writing method, and magnetoresistive effect element
03/26/2009WO2009037896A1 Semiconductor device manufacturing method and semiconductor device
03/26/2009WO2009037797A1 Display device manufacturing method and laminated structure
03/26/2009WO2009036856A1 Electronic component, methods for the production thereof, and use thereof
03/26/2009WO2009018556A3 Method of enhancing drive current in a transistor
03/26/2009WO2009017339A3 Organic light-emitting transistors and method of the same, and active matrix organic light-emitting displays and method of the same
03/26/2009WO2005065238A3 Micro pin grid array with pin motion isolation
03/26/2009WO2004105099A3 Group ii-vi semiconductor devices
03/26/2009US20090081843 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
03/26/2009US20090081415 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
03/26/2009US20090080250 Nonvolatile semiconductor storage device and operation method thereof
03/26/2009US20090080238 Magnetoresistive element and magnetoresistive random access memory including the same
03/26/2009US20090079892 Pixel Array Substrate and Liquid Crystal Display
03/26/2009US20090079469 Semiconductor integrated circuit
03/26/2009US20090079342 Light-emitting element, display device, and electronic appliance
03/26/2009US20090079341 Backplane structures for solution processed electronic devices
03/26/2009US20090079090 Stacked semiconductor chips
03/26/2009US20090079037 Micromechanical component and method for producing a micromechanical component
03/26/2009US20090079036 Gallium Nitride Baseplate and Epitaxial Substrate
03/26/2009US20090079035 Non-polar iii-v nitride material and production method
03/26/2009US20090079034 Non-polar iii-v nitride semiconductor and growth method
03/26/2009US20090079033 Lateral junction varactor with large tuning range
03/26/2009US20090079032 Method of forming a high capacitance diode and structure therefor
03/26/2009US20090079031 Method and device with improved base access resistance for npn bipolar transistor
03/26/2009US20090079030 Forming SOI Trench Memory with Single-Sided Buried Strap
03/26/2009US20090079029 Capacitor structure and fabricating method thereof
03/26/2009US20090079026 Stress-generating structure for semiconductor-on-insulator devices
03/26/2009US20090079025 Substrate provided with semiconductor films and manufacturing method thereof
03/26/2009US20090079024 Semiconductor device and method for manufacturing the same
03/26/2009US20090079022 Method of forming low capacitance esd device and structure therefor
03/26/2009US20090079018 Magnetoresistive element and magnetic memory
03/26/2009US20090079017 Semiconductor device having multiple substrates
03/26/2009US20090079016 Method for forming a dielectric stack
03/26/2009US20090079015 Lanthanide dielectric with controlled interfaces
03/26/2009US20090079014 Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachment
03/26/2009US20090079013 Mos transistor and method for manufacturing the transistor
03/26/2009US20090079010 Nickel silicide formation for semiconductor components
03/26/2009US20090079007 Semiconductor device and manufacturing method thereof
03/26/2009US20090079005 Integrated Circuits and Methods of Design and Manufacture Thereof
03/26/2009US20090079004 Method for making a transistor with self-aligned double gates by reducing gate patterns
03/26/2009US20090079003 Method for protecting circuits from damage due to currents and voltages during manufacture
03/26/2009US20090078999 Semiconductor device structures with floating body charge storage and methods for forming such semiconductor device structures.
03/26/2009US20090078996 Semiconductor device
03/26/2009US20090078995 Semiconductor device and method of manufacturing semiconductor device
03/26/2009US20090078994 Semiconductor device and method for fabricating the same
03/26/2009US20090078991 Stress enhanced semiconductor device and methods for fabricating same
03/26/2009US20090078990 Nonvolatile semiconductor memory device
03/26/2009US20090078989 Method of forming silicon nitride at low temperature, charge trap memory device including crystalline nano dots formed by using the same, and method of manufacturing the charge trap memory device
03/26/2009US20090078987 Programmable element and manufacturing method of semiconductor device
03/26/2009US20090078985 Semiconductor integrated circuit device and a method of manufacturing the same
03/26/2009US20090078984 Semiconductor apparatus and method for manufacturing the same
03/26/2009US20090078983 Non-volatile semiconductor memory device and method of manufacturing the same
03/26/2009US20090078982 Alpha hydroxy carboxylic acid etchants for silicon microstructures
03/26/2009US20090078981 Semiconductor memory device and manufacturing method therefor
03/26/2009US20090078980 Method for Producing an Integrated Circuit, Integrated Circuit, DRAM Device and Memory Module
03/26/2009US20090078971 Semiconductor device with structured current spread region and method
03/26/2009US20090078966 Field-effect transistor, semiconductor chip and semiconductor device
03/26/2009US20090078965 Individually controlled multiple iii-nitride half bridges
03/26/2009US20090078964 Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain
03/26/2009US20090078962 Adjustable Field Effect Rectifier
03/26/2009US20090078943 Nitride semiconductor device and manufacturing method thereof
03/26/2009US20090078942 Semiconductor device and method of manufacturing the same
03/26/2009US20090078940 Location-controlled crystal seeding
03/26/2009US20090078939 Display device and method for manufacturing the same
03/26/2009US20090078938 Electrophoretic display device and method for manufacturing thereof
03/26/2009US20090078937 Production methods of pattern thin films, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate
03/26/2009US20090078936 Semiconductor device
03/26/2009US20090078932 Systems, devices, and methods for controllably coupling qubits
03/26/2009US20090078930 Quantum device, manufacturing method of the same and controlling method of the same
03/26/2009US20090078929 Nanowire device and method of making a nanowire device
03/26/2009US20090078927 Composite hard mask for the etching of nanometer size magnetic multilayer based device
03/26/2009DE19931324B4 Siliciumcarbid-MOS-Halbleiter-Bauelement und Verfahren zu seiner Herstellung Silicon carbide MOS semiconductor device and process for its preparation
03/26/2009DE19913375B4 Verfahren zur Herstellung einer MOS-Transistorstruktur A method of manufacturing a MOS transistor structure
03/26/2009DE19710237B4 Feinverarbeitungsverfahren Fine processing method
03/26/2009DE112005001337T5 Feldeffekttransistor, Halbleitereinrichtung, Verfahren zur Herstellung dieser, und Verfahren für ein Halbleiterkristallwachstum Field effect transistor semiconductor device, methods for producing these, and processes for a semiconductor crystal growth
03/26/2009DE112005000315T5 Mit aktiven Strukturen einheitlicher kritischer Abmessung gebildeter Mehrgatetransistor With active structures uniform critical dimension educated multi-gate transistor
03/26/2009DE102008040892A1 Halbleitervorrichtung mit einer Diode und einem IGBT A semiconductor device comprising a diode and a IGBT
03/25/2009EP2040302A1 Semiconductor device
03/25/2009EP2040301A2 Semiconductor device and method of manufacturing the same
03/25/2009EP2040300A1 A MOSFET device and method to fabricate it
03/25/2009EP2040299A1 Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device
03/25/2009EP2040298A2 Integrated circuit arrangements with ESD-resistant capacitor and method of production
03/25/2009EP2040292A1 Nonvolatile semiconductor memory and its drive method
03/25/2009EP2039327A1 Multi-walled placeholder
03/25/2009EP2039005A2 Circuit configurations having four terminal jfet devices
03/25/2009EP2038934A2 Scalable process and structure for jfet for small and decreasing line widths
03/25/2009EP2038933A2 Carbon nanotube field effect transistor
03/25/2009EP2038919A2 Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method
03/25/2009EP2038917A1 Bipolar transistor with dual shallow trench isolation and low base resistance
03/25/2009EP2038818A1 Paper including semiconductor device and manufacturing method thereof
1 ... 843 844 845 846 847 848 849 850 851 852 853 854 855 856 857 858 859 860 861 862 863 ... 2182