| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/15/2011 | CN102099895A Method for fabricating crystalline film and device for fabricating crystalline film |
| 06/15/2011 | CN102099848A Active matrix substrate, display panel, display device, and active matrix substrate manufacturing method |
| 06/15/2011 | CN102099193A Screen plate, interlayer insulation film, circuit board, active matrix circuit board, and image display apparatus |
| 06/15/2011 | CN102098028A Complementary metal-oxide-semiconductor (CMOS) ring oscillator based on mixed crystal orientation silicon on insulator (SOI) technology and manufacturing method thereof |
| 06/15/2011 | CN102097495A Integrated circuit, capacitor and its formation method |
| 06/15/2011 | CN102097494A Schottky diode structure with capability of reducing reverse leakage current and with low forward voltage drop |
| 06/15/2011 | CN102097493A Schottky diode structure for reducing reverse leakage current by utilizing generated depletion area |
| 06/15/2011 | CN102097492A Hetetrostructure field effect diode and manufacturing method thereof |
| 06/15/2011 | CN102097491A Sonos and manufacturing method thereof |
| 06/15/2011 | CN102097490A Method for manufacturing double-bit flash memory |
| 06/15/2011 | CN102097489A Thin film transistor and manufacturing method thereof |
| 06/15/2011 | CN102097488A Semiconductor device and display device |
| 06/15/2011 | CN102097487A Oxide semiconductor thin film transistor and method of manufacturing the same |
| 06/15/2011 | CN102097486A Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor |
| 06/15/2011 | CN102097485A Edmos transistor and manufacturing method thereof |
| 06/15/2011 | CN102097484A Multichannel LDMOS (laterally diffused metal oxide semiconductor) and preparation method thereof |
| 06/15/2011 | CN102097483A GaN-base heterostructure enhancement type insulated gate field effect transistor and preparation method thereof |
| 06/15/2011 | CN102097482A Integrated double longitudinal channel SOI LDMOS (silicon on insulator laterally double diffusion metal oxide semiconductor) device unit |
| 06/15/2011 | CN102097481A P-type super-junction transverse double-diffusion metal oxide semiconductor tube |
| 06/15/2011 | CN102097480A N-type super-junction transverse double-diffusion metal oxide semiconductor tube |
| 06/15/2011 | CN102097479A Low-voltage buried channel VDMOS (vertical double-diffused metal oxide semiconductor) device |
| 06/15/2011 | CN102097478A Extremely-low on resistance shallow slot buried channel VDMOS (vertical double diffusion metal oxide semiconductor) device |
| 06/15/2011 | CN102097477A MIS (metal-insulator-semiconductor) and MIM (metal-insulator-metal) device provided with gate |
| 06/15/2011 | CN102097476A Integrated circuit structure and formation method thereof |
| 06/15/2011 | CN102097475A Semiconductor device and method for fabricating semiconductor device |
| 06/15/2011 | CN102097474A CMOS compatible low gate charge lateral MOSFET |
| 06/15/2011 | CN102097473A Semiconductor device |
| 06/15/2011 | CN102097472A Process for forming a wiring film, a transistor, and an electronic device |
| 06/15/2011 | CN102097471A 半导体器件 Semiconductor devices |
| 06/15/2011 | CN102097470A Semiconductor device and method for manufacturing the same |
| 06/15/2011 | CN102097469A Semiconductor structure and manufacture method thereof |
| 06/15/2011 | CN102097468A Trench MOSFEF structure and preparation method thereof |
| 06/15/2011 | CN102097467A Compound semiconductor device and production method thereof |
| 06/15/2011 | CN102097466A Silicon germanium heterojunction transistor and manufacturing method thereof |
| 06/15/2011 | CN102097465A Parasitic vertical PNP triode in BiCMOS process and manufacturing method thereof |
| 06/15/2011 | CN102097464A High-voltage bipolar transistor |
| 06/15/2011 | CN102097463A Semi self-aligned bipolar transistor and manufacturing method thereof |
| 06/15/2011 | CN102097462A Bipolar semiconductor device and method of producing same |
| 06/15/2011 | CN102097461A Substantially lattice matched semiconductor materials and associated methods |
| 06/15/2011 | CN102097460A Semiconductor device and its manufacture method |
| 06/15/2011 | CN102097459A Multilayer film structure for controllably preparing polycrystalline silicon films |
| 06/15/2011 | CN102097458A Methods and devices for fabricating and assembling printable semiconductor elements |
| 06/15/2011 | CN102097441A SOI (Silicon On Insulator) device for plasma display panel driving chip |
| 06/15/2011 | CN102097439A Manufacturing method of semiconductor device |
| 06/15/2011 | CN102097436A SONOS storage unit and operating method thereof |
| 06/15/2011 | CN102097434A Trench metal-oxide semiconductor field effect transistor (MOSFET) and manufacture method thereof |
| 06/15/2011 | CN102097432A Semiconductor device and manufacturing method thereof |
| 06/15/2011 | CN102097431A Chip and electro-static discharge (ESD) protection element thereof |
| 06/15/2011 | CN102097389A LDMOS (laterally diffused metal oxide semiconductor), semiconductor device integrated with same and manufacturing method thereof |
| 06/15/2011 | CN102097378A Method for manufacturing trench metal-oxide semiconductor field effect transistor (MOSFET) |
| 06/15/2011 | CN102097369A Array substrate for display device |
| 06/15/2011 | CN102097325A Semiconductor device, method for manufacturing the semiconductor device, and display device |
| 06/15/2011 | CN102097324A Semiconductor component and manufacturing method thereof |
| 06/15/2011 | CN102097320A NMOS (N-channel Metal Oxide Semiconductor) device and forming method thereof |
| 06/15/2011 | CN102097312A Process for growing ONO (oxide-nitride-oxide) capacitor structure |
| 06/15/2011 | CN102097306A Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants |
| 06/15/2011 | CN102097305A Semiconductor device and its manufacturing method, solid-state imaging device and solid-state imaging apparatus |
| 06/15/2011 | CN102097127A Operating method of nonvolatile memory with variable raceway channel region interface |
| 06/15/2011 | CN102095769A Carbon-nano-tube air-sensitive sensor and preparation method thereof |
| 06/15/2011 | CN102093401A Tetrabenzyl hafnium and synthetic method and application thereof |
| 06/15/2011 | CN102093400A Tetra(orthoalkoxyphenoxy)hafnium, synthetic method thereof and application thereof |
| 06/15/2011 | CN101777581B P-type super-junction laterally double diffused metal oxide semiconductor |
| 06/15/2011 | CN101777564B SOI CMO device with vertical grid structure |
| 06/15/2011 | CN101740570B Complementary metal oxide semiconductor transistor device and manufacturing method thereof |
| 06/15/2011 | CN101656239B Bonding welding disk lowering parasitic capacitance and preparing method thereof |
| 06/15/2011 | CN101651097B Non-volatile memory cell and manufacturing method thereof |
| 06/15/2011 | CN101640414B Programmable semiconductor anti-surge protective device with deep trap structure |
| 06/15/2011 | CN101636827B Active matrix substrate |
| 06/15/2011 | CN101626035B Poly silicon thin film transistor and method of fabricating the same |
| 06/15/2011 | CN101622712B Two-terminal switching devices and their methods of fabrication |
| 06/15/2011 | CN101582426B Capless DRAM unit and preparation method thereof |
| 06/15/2011 | CN101552285B Gate associated transistor of trough arsenic-doped polysilicon structure |
| 06/15/2011 | CN101478003B Single electron transistor based on ordered mesoporous and preparation method thereof |
| 06/15/2011 | CN101461047B Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device |
| 06/15/2011 | CN101432882B A transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility |
| 06/15/2011 | CN101427365B Semiconductor sensor device and method for manufacturing same |
| 06/15/2011 | CN101359168B Methof for producing graytone mask and graytone mask |
| 06/15/2011 | CN101211965B Circular hole masked grating groove MOSFET device and its production process |
| 06/15/2011 | CN101188251B Memory unit and its device and making method |
| 06/15/2011 | CN101188248B CMOS structure and its making method |
| 06/15/2011 | CN101154343B Display device |
| 06/15/2011 | CN101105614B Image sensing array with light-sensing unit and liquid crystal display |
| 06/14/2011 | US7961545 Semiconductor device |
| 06/14/2011 | US7961540 Dynamic data restore in thyristor-based memory device |
| 06/14/2011 | US7961165 Liquid crystal display device and method for driving the same |
| 06/14/2011 | US7960845 Flexible contactless wire bonding structure and methodology for semiconductor device |
| 06/14/2011 | US7960843 Chip arrangement and method of manufacturing a chip arrangement |
| 06/14/2011 | US7960839 Semiconductor interconnection line and method of forming the same |
| 06/14/2011 | US7960813 Programmable resistance memory devices and systems using the same and methods of forming the same |
| 06/14/2011 | US7960812 Electrical devices having adjustable capacitance |
| 06/14/2011 | US7960811 Semiconductor devices and methods of manufacture thereof |
| 06/14/2011 | US7960810 Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof |
| 06/14/2011 | US7960809 eFuse with partial SiGe layer and design structure therefor |
| 06/14/2011 | US7960808 Reprogrammable fuse structure and method |
| 06/14/2011 | US7960805 MEMS structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall |
| 06/14/2011 | US7960803 Electronic device having a hafnium nitride and hafnium oxide film |
| 06/14/2011 | US7960802 Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget |
| 06/14/2011 | US7960801 Gate electrode stress control for finFET performance enhancement description |
| 06/14/2011 | US7960794 Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
| 06/14/2011 | US7960793 Semiconductor device |