Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2011
06/09/2011US20110133313 Hardmask materials
06/09/2011US20110133312 Power device
06/09/2011US20110133310 integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit
06/09/2011US20110133308 Semiconductor device with oxide define pattern
06/09/2011US20110133306 Semiconductor devices and methods of forming the same
06/09/2011US20110133305 Semiconductor chip for suppressing electromagnetic wave
06/09/2011US20110133304 Structure and Method for Placement, Sizing and Shaping of Dummy Structures
06/09/2011US20110133303 MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material
06/09/2011US20110133300 Bottom electrode for MRAM device
06/09/2011US20110133299 Magnetic Tunnel Junction Device
06/09/2011US20110133297 Semiconductor component and method for producing semiconductor components
06/09/2011US20110133296 Semiconductor device, and communication apparatus and electronic apparatus having the same
06/09/2011US20110133295 Region divided substrate and semiconductor device
06/09/2011US20110133294 Micro electromechanical systems (mems) having a gap stop and method therefor
06/09/2011US20110133292 FinFETs with Multiple Fin Heights
06/09/2011US20110133286 Integrierter schaltungsteil
06/09/2011US20110133280 Different thickness oxide silicon nanowire field effect transistors
06/09/2011US20110133279 Semiconductor device
06/09/2011US20110133278 Semiconductor device
06/09/2011US20110133277 Semiconductor device
06/09/2011US20110133276 Gate Dielectric Formation for High-Voltage MOS Devices
06/09/2011US20110133274 Lateral double-diffused mosfet
06/09/2011US20110133273 Semiconductor device and manufacturing method thereof
06/09/2011US20110133272 Semiconductor device with improved on-resistance
06/09/2011US20110133270 Memory device with recessed construction between memory constructions
06/09/2011US20110133269 Semiconductor apparatus
06/09/2011US20110133268 Memory Cells
06/09/2011US20110133267 Method of fabricating semiconductor device and the semiconductor device
06/09/2011US20110133266 Flash Memory Having a Floating Gate in the Shape of a Curved Section
06/09/2011US20110133265 Memory cell
06/09/2011US20110133264 System and method for eeprom architecture
06/09/2011US20110133263 Semiconductor device having reduced sub-threshold leakage
06/09/2011US20110133262 Power Semiconductor Component with Plate Capacitor Structure and Edge Termination
06/09/2011US20110133259 Stressed barrier plug slot contact structure for transistor performance enhancement
06/09/2011US20110133258 Shielded gate trench mosfet with increased source-metal contact
06/09/2011US20110133257 Transferred thin film transistor and method for manufacturing the same
06/09/2011US20110133256 CMOS-MEMS Cantilever Structure
06/09/2011US20110133255 Apparatus and method for molecule detection using nanopores
06/09/2011US20110133251 Gated algan/gan heterojunction schottky device
06/09/2011US20110133249 High electron mobility transistor and method of forming the same
06/09/2011US20110133248 Vertical pmos field effect transistor and manufacturing method thereof
06/09/2011US20110133247 Zener-Triggered SCR-Based Electrostatic Discharge Protection Devices For CDM And HBM Stress Conditions
06/09/2011US20110133246 Internal combustion engine igniter semiconductor device
06/09/2011US20110133212 Methods of making semiconductor devices having implanted sidewalls and devices made thereby
06/09/2011US20110133211 Semiconductor device and method of manufacturing the same
06/09/2011US20110133210 Schottky barrier diode and method for manufacturing schottky barrier diode
06/09/2011US20110133209 GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
06/09/2011US20110133207 Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
06/09/2011US20110133206 Compound semiconductor device
06/09/2011US20110133205 Field-effect transistor
06/09/2011US20110133203 Transparent ceramic photo-optical semiconductor high power switches
06/09/2011US20110133202 High throughput recrystallization of semiconducting materials
06/09/2011US20110133201 Electronic circuit
06/09/2011US20110133200 Dual Gate Layout for Thin Film Transistor
06/09/2011US20110133199 Arrray substrate for liquid crystal display device and method of fabricating the same
06/09/2011US20110133198 Thin film transistor, display device including the same and manufacturing method thereof
06/09/2011US20110133197 Thin film transistor and manufacturing method thereof
06/09/2011US20110133196 Semiconductor device
06/09/2011US20110133195 Thin film transistor, display device including the same, and method of manufacturing the display device
06/09/2011US20110133193 Thin film transistor substrate and the method thereof
06/09/2011US20110133191 Semiconductor device and manufacturing method thereof
06/09/2011US20110133190 Thin-film transistor and intermediate of thin-film transistor
06/09/2011US20110133189 NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING
06/09/2011US20110133188 Process for Simultaneous Deposition of Crystalline and Amorphous Layers with Doping
06/09/2011US20110133186 Process for manufacturing a semiconductor wafer having soi-insulated wells and semiconductor wafer thereby manufactured
06/09/2011US20110133183 Display device
06/09/2011US20110133182 Semiconductor device
06/09/2011US20110133181 Display device
06/09/2011US20110133180 Semiconductor device and manufacturing method thereof
06/09/2011US20110133179 Semiconductor device and manufacturing method thereof
06/09/2011US20110133178 Semiconductor device
06/09/2011US20110133177 Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
06/09/2011US20110133176 Transistor and electronic apparatus including same
06/09/2011US20110133169 Gate-All-Around Nanowire Tunnel Field Effect Transistors
06/09/2011US20110133168 Quantum-well-based semiconductor devices
06/09/2011US20110133167 Planar and nanowire field effect transistors
06/09/2011US20110133166 Nanowire fet having induced radial strain
06/09/2011US20110133165 Self-aligned contacts for nanowire field effect transistors
06/09/2011US20110133164 Omega Shaped Nanowire Field Effect Transistors
06/09/2011US20110133163 Nanowire fet having induced radial strain
06/09/2011US20110133162 Gate-All-Around Nanowire Field Effect Transistors
06/09/2011US20110133161 Omega Shaped Nanowire Tunnel Field Effect Transistors
06/09/2011US20110133153 Porous nanostructure and method of manufacturing the same
06/09/2011US20110133147 Continuous plane of thin-film materials for a two-terminal cross-point memory
06/09/2011US20110132773 Apparatus and method for detecting substances
06/09/2011US20110132462 Modified copper-zinc-tin semiconductor films, uses thereof and related methods
06/09/2011US20110132439 Fullerene compounds for solar cells and photodetectors
06/09/2011DE19828606B4 Halbleiter-Giergeschwindigkeitssensor Semiconductor yaw rate sensor
06/09/2011DE19819456B4 Verfahren zur Herstellung eines mikromechanischen Bauelements A process for producing a micromechanical component
06/09/2011DE112006000598B4 Transistor, Verfahren zur Herstellung einer Halbleiteranordnung sowie zugehörige Komplementär-Halbleiter-Anordnung Transistor, method of manufacturing a semiconductor device and associated semiconductor arrangement complementary
06/09/2011DE10262313B4 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
06/09/2011DE10256978B4 Verfahren zum Herstellen einer Flashspeicherzelle A method of manufacturing a flash memory cell
06/09/2011DE10223729B4 Verfahren zur Herstellung einer Halbleitervorrichtung, die Imstande ist eine dynamische Größe zu erfassen A method of manufacturing a semiconductor device which is capable of detecting a dynamic amount
06/09/2011DE102010060782A1 Halbleitervorrichtung und Herstellungsverfahren A semiconductor device and manufacturing method
06/09/2011DE102010053571A1 SRAM-Struktur mit FinFETs mit mehreren Rippen SRAM structure with FinFETs with several ribs
06/09/2011DE102010046506A1 Flash-Speicher mit einem Floating-Gate in der Gestalt eines gekrümmten Abschnitts Flash memory using a floating gate in the shape of a curved portion
06/09/2011DE102010043450A1 Method for fabricating cellular trench metal oxide semiconductor field effect transistor (MOSFET) in power conversion system, involves titanizing crystally second gate conductor layer to form titanium (Ti)-gate conductor layer
06/09/2011DE102009056603A1 Semiconductor arrangement manufacturing method, involves partially optimizing deceleration oxide and scattering oxide such that photons are raised to surface of guard ring and silicide is limited in guard ring area
06/09/2011DE102009047352A1 Schichtaufbau zu elektrischen Kontaktierung von Halbleiterbauelementen Layer structure for electrically contacting semiconductor devices
06/09/2011DE102008062488B4 Halbleiterbauelement und Verfahren zur Herstellung des Bauelementes Semiconductor device and process for the preparation of the component
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