Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2011
06/30/2011US20110156169 Semiconductor apparatus capable of reducing plasma damage
06/30/2011US20110156160 Metal Oxide Semiconductor (MOS) Type Semiconductor Device And Manufacturing Method Thereof
06/30/2011US20110156151 Electrode Pick Up Structure In Shallow Trench Isolation Process
06/30/2011US20110156146 eFUSE ENABLEMENT WITH THIN POLYSILICON OR AMORPHOUS-SILICON GATE-STACK FOR HKMG CMOS
06/30/2011US20110156145 Fabrication of channel wraparound gate structure for field-effect transistor
06/30/2011US20110156142 High voltage device with partial silicon germanium epi source/drain
06/30/2011US20110156141 Transistor and method thereof
06/30/2011US20110156140 Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device
06/30/2011US20110156139 Super-Junction trench mosfet with resurf step oxide and the method to make the same
06/30/2011US20110156138 Semiconductor device and method of manufacturing the same
06/30/2011US20110156137 Trench gate semiconductor device and the method of manufacturing the same
06/30/2011US20110156136 Semiconductor component and manufacturing method thereof
06/30/2011US20110156135 Buried gate in semiconductor device and method for fabricating the same
06/30/2011US20110156134 Method of fabricating semiconductor device and semiconductor device fabricated thereby
06/30/2011US20110156133 Semiconductor nanostructures, semiconductor devices, and methods of making same
06/30/2011US20110156131 Nonvolatile semiconductor memory device and method for manufacturing the same
06/30/2011US20110156130 Method for forming narrow structures in a semiconductor device
06/30/2011US20110156129 Method for manufacturing twin bit structure cell with hafnium oxide and nano-crystalline silicon layer
06/30/2011US20110156128 Dielectric film manufacturing method
06/30/2011US20110156127 Flash memory device with word lines of uniform width and method for manufacturing thereof
06/30/2011US20110156126 Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode
06/30/2011US20110156125 Nonvolatile semiconductor device including a floating gate and associated systems
06/30/2011US20110156124 Nonvolatile semiconductor memory device and method of manufacturing the same
06/30/2011US20110156123 Method for manufacturing twin bit structure cell with hafnium oxide layer
06/30/2011US20110156122 High Density NOR Flash Array Architecture
06/30/2011US20110156121 Memory cell with improved retention
06/30/2011US20110156115 Apparatus for variable resistive memory punchthrough access method
06/30/2011US20110156110 Field Effect Transistors Having Gate Electrode Silicide Layers with Reduced Surface Damage
06/30/2011US20110156109 Method and system for manipulating organic nanostructures
06/30/2011US20110156108 Semiconductor device and method of manufacturing the same
06/30/2011US20110156107 Self-aligned contacts
06/30/2011US20110156106 Hermetic mems device and method for fabricating hermetic mems device and package structure of mems device
06/30/2011US20110156100 High Electron Mobility Transistor and Method for Fabricating the Same
06/30/2011US20110156099 Enhanced confinement of sensitive materials of a high-k metal gate electrode structure
06/30/2011US20110156098 Buffer structure for semiconductor device and methods of fabrication
06/30/2011US20110156096 Lateral Insulated Gate Bipolar Transistor (LIGBT)
06/30/2011US20110156095 Semiconductor Component with an Emitter Control Electrode
06/30/2011US20110156094 Electrical module
06/30/2011US20110156093 High-voltage power transistor using soi technology
06/30/2011US20110156058 Silicon carbide monocrystal substrate and manufacturing method therefor
06/30/2011US20110156057 Substrate of the semiconductor on insulator type with intrinsic and doped diamond layers
06/30/2011US20110156054 Silicon carbide semiconductor device and method of manufacturing the same
06/30/2011US20110156053 Semiconductor device having d mode jfet and e mode jfet and method for manufacturing the same
06/30/2011US20110156052 Semiconductor device having JFET and method for manufacturing the same
06/30/2011US20110156051 Semiconductor devices with low leakage schottky contacts
06/30/2011US20110156050 Semiconductor device and method for producing the same
06/30/2011US20110156048 Nitride-based semiconductor device and method for fabricating the same
06/30/2011US20110156047 Nitride semiconductor template and method of manufacturing the same
06/30/2011US20110156046 Photomask and thin-film transistor fabricated using the photomask
06/30/2011US20110156045 Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same
06/30/2011US20110156044 Dense arrays and charge storage devices
06/30/2011US20110156043 Thin film transistor
06/30/2011US20110156038 Active device array substrate
06/30/2011US20110156037 Thin film transistor substrate
06/30/2011US20110156027 Semiconductor device
06/30/2011US20110156026 Method for manufacturing semiconductor device
06/30/2011US20110156025 Memory device and semiconductor device
06/30/2011US20110156023 Semiconductor device and manufacturing method thereof
06/30/2011US20110156022 Semiconductor device and method for manufacturing the same
06/30/2011US20110156021 Thin film transistor
06/30/2011US20110156020 Transistor
06/30/2011US20110156007 Complementary logic gate device
06/30/2011US20110156006 Forming A Non-Planar Transistor Having A Quantum Well Channel
06/30/2011US20110156005 Germanium-based quantum well devices
06/30/2011US20110156004 Multi-gate III-V quantum well structures
06/30/2011US20110156003 Systems and Methods for Nanowire Growth
06/30/2011US20110155996 Bistable carbazole compounds
06/30/2011US20110155995 Vertically Oriented Nanostructure and Fabricating Method Thereof
06/30/2011US20110155240 Method of manufacture of semiconductor device and conductive compositions used therein
06/30/2011US20110155238 Pyridine type metal complex, photoelectrode comprising the metal complex, and dye-sensitized solar cell comprising the photoelectrode
06/30/2011DE10362232B4 Leistungshalbleitervorrichtung Power semiconductor device
06/30/2011DE102010063806A1 Herstellungsverfahren für eine Halbleitervorrichtung Manufacturing method of a semiconductor device
06/30/2011DE102010063728A1 Halbleitervorrichtung Semiconductor device
06/30/2011DE102009060072A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
06/30/2011DE102009059304A1 Electronic/optical component i.e. electronic sensor, for use as catheter for examining hollow organs of e.g. animals, has wedge-shaped nano-objects penetrated into insulation to mount electrical or optical conductor on component
06/30/2011DE102009055328A1 Halbleiterbauelement mit einer Emittersteuerelektrode A semiconductor device comprising an emitter control electrode
06/30/2011DE102009006884B4 Verfahren zur Herstellung eines Transistorbauelementes mit In-Situ erzeugten Drain- und Source-Gebieten mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil und entsprechendes Transistorbauelement A method for producing a transistor component with in-situ generated drain and source regions with a strain-inducing alloy and a gradually varying doping profile and corresponding transistor device
06/30/2011DE102008033410B4 Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu Power electronic connection device with a power semiconductor device and manufacturing method therefor
06/30/2011DE102006062831B4 Electronic component e.g. silicon controlled rectifier, manufacturing method, involves doping portion of body regions by introducing dopant atoms into portion through intermediate region formed between separate gate regions
06/30/2011CA2776403A1 Silicon carbide substrate
06/29/2011EP2339639A2 Field effect transistor using amorphous oxide film as channel layer
06/29/2011EP2339638A1 Transistor
06/29/2011EP2339637A1 Power MOSFET device and method of making the same
06/29/2011EP2339636A1 Power semiconductor device and manufacturing method
06/29/2011EP2339635A2 High electron mobility transistor
06/29/2011EP2339634A2 GaN based FET and method for producing the same
06/29/2011EP2339633A1 Transistor, method of manufacturing transistor, and electronic device including transistor
06/29/2011EP2339622A1 Wirebonding Process
06/29/2011EP2339613A1 Power semiconductor device and method for producing same
06/29/2011EP2338177A1 Semiconductor device and method of manufacturing such a device
06/29/2011EP2338168A2 Method of making a split gate memory cell
06/29/2011EP2206154B1 Trench gate MOSFET and method of manufacturing the same
06/29/2011EP1396030B1 Vertical power semiconductor device and method of making the same
06/29/2011EP1366569B1 Semiconductor devices
06/29/2011EP1337458B1 Surface-micromachined absolute pressure sensor and a method for manufacturing thereof
06/29/2011EP1226294B1 Methods of oxidizing multiwalled carbon nanotubes
06/29/2011EP1166363B1 Trench dmos transistor structure having a low resistance path to a drain contact located on an upper surface
06/29/2011CN201887047U N-type super-junction laterally double-diffused metal-oxide transistor
06/29/2011CN1956196B biCMOS device and method of manufacturing a biCMOS device
06/29/2011CN1841780B Thin film transistor, thin film transistor display panel, and manufacturing method thereof