Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2011
06/16/2011US20110140212 Electromechanical transducer and method of manufacturing the same
06/16/2011US20110140211 Flow Sensor, Method for Manufacturing Flow Sensor and Flow Sensor Module
06/16/2011US20110140210 Microelectromechanical sensor device package and method for making the same
06/16/2011US20110140209 Multi-layer micro structurefor sensing substance
06/16/2011US20110140208 Fabrication process of a biosensor on a semiconductor substrate
06/16/2011US20110140207 Metal gate structure and method of forming the same
06/16/2011US20110140206 Semiconductor device
06/16/2011US20110140205 Semiconductor device and method for manufacturing the same
06/16/2011US20110140204 Transistors with an extension region having strips of differing conductivity type and methods of forming the same
06/16/2011US20110140201 Lateral power mosfet structure and method of manufacture
06/16/2011US20110140198 Semiconductor device and method for fabricating the same
06/16/2011US20110140197 Semiconductor device and method for manufacturing the same
06/16/2011US20110140196 Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same
06/16/2011US20110140195 Cross-point diode arrays and methods of manufacturing cross-point diode arrays
06/16/2011US20110140193 Semiconductor device and method of manufacturing the same
06/16/2011US20110140192 Method for manufacturing twin bit structure cell with floating polysilicon layer
06/16/2011US20110140191 Method for manufacturing twin bit structure cell with silicon nitride layer
06/16/2011US20110140190 Method for manufacturing twin bit structure cell with aluminum oxide layer
06/16/2011US20110140188 Non-volatile memory device and method of fabricating the same
06/16/2011US20110140187 Methods of Forming Vertical Field Effect Transistors, Vertical Field Effect Transistors, And DRAM Cells
06/16/2011US20110140186 Capacitor for semiconductor device and manufacturing method of capacitor for semiconductor device
06/16/2011US20110140184 Surround gate access transistors with grown ultra-thin bodies
06/16/2011US20110140183 Semiconductor device and method of forming the same
06/16/2011US20110140181 Removal of Masking Material
06/16/2011US20110140180 Semiconductor device having diode characteristic
06/16/2011US20110140179 Semiconductor device
06/16/2011US20110140176 Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
06/16/2011US20110140174 Compound semiconductor device and production method thereof
06/16/2011US20110140173 Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices
06/16/2011US20110140172 Reverse side engineered iii-nitride devices
06/16/2011US20110140171 Apparatus and methods for forming a modulation doped non-planar transistor
06/16/2011US20110140170 Structure and method for making a strained silicon transistor
06/16/2011US20110140169 Highly conductive source/drain contacts in III-nitride transistors
06/16/2011US20110140167 Nanotube Semiconductor Devices
06/16/2011US20110140166 Method of fabricating a deep trench insulated gate bipolar transistor
06/16/2011US20110140165 High voltage semiconductor device
06/16/2011US20110140134 Display device and manufacturing method thereof
06/16/2011US20110140124 Passivation of aluminum nitride substrates
06/16/2011US20110140123 Nitride-Based Transistors With a Protective Layer and a Low-Damage Recess
06/16/2011US20110140122 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME
06/16/2011US20110140121 Enhancement normally off nitride semiconductor device and method of manufacturing the same
06/16/2011US20110140118 Backside stress compensation for gallium nitride or other nitride-based semiconductor devices
06/16/2011US20110140116 Thin film transistor, display device, and electronic device
06/16/2011US20110140109 Semiconductor device and manufacturing method thereof
06/16/2011US20110140103 Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate
06/16/2011US20110140102 Semiconductor element and a production method therefor
06/16/2011US20110140100 Thin-film transistor, method of producing the same, and devices provided with the same
06/16/2011US20110140098 Field effect transistor
06/16/2011US20110140097 Thin film transistor and method of fabricating the same
06/16/2011US20110140096 Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor
06/16/2011US20110140095 Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same
06/16/2011US20110140094 Thin film transistor array panel and manufacturing method thereof
06/16/2011US20110140088 Phase coherent solid state electron gyroscope array
06/16/2011US20110140087 Scalable quantum well device and method for manufacturing the same
06/16/2011US20110140086 Nanostructured memory device
06/16/2011US20110140085 Methods for fabricating self-aligning arrangements on semiconductors
06/16/2011US20110140084 Optical semiconductor device and method of manufacturing optical semiconductor device
06/16/2011US20110140083 Semiconductor Device Structures with Modulated Doping and Related Methods
06/16/2011US20110140082 Light-receiving element and light-receiving element array
06/16/2011US20110140073 Semiconducting microcavity and microchannel plasma devices
06/16/2011US20110140072 Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
06/16/2011US20110140064 Carbon/tunneling-barrier/carbon diode
06/16/2011US20110139209 Method of growing a thin film, a method of forming a structure and a device
06/16/2011US20110138902 Mems microphone array on a chip
06/16/2011DE112009001874T5 Verfahren und Vorrichtung zur Herstellung eines Dünnschichttransistors Method and apparatus for manufacturing a thin film transistor
06/16/2011DE112009001714T5 Vertikaler MOSFET mit einer den Körper durchdringenden Durchkontaktierung für den Gatebereich Vertical MOSFET having a body piercing through connection for the gate area
06/16/2011DE112009001128T5 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
06/16/2011DE112006003576B4 Verfahren zur Ausbildung eines FETs mit Struktur zur Reduzierung des äusseren Widerstands des dreidimensionalen Transistors durch Verwendung von Epitaxie-Schichten und Transistor A method for forming an FET with a structure for reducing the external resistance of the three-dimensional transistor by use of epitaxial layers and transistor
06/16/2011DE112005003584B4 Verfahren zum Herstellen eines Trench-Metalloxid-Halbleiter-Feldeffekttransistors A method of manufacturing a trench metal-oxide-semiconductor field-effect transistor
06/16/2011DE10392224T5 Drucksensor, Elektroikkomponente für Durchflussmesser und Verfahren zum Herstellen derselben Pressure sensor, Elektroikkomponente for flowmeters and methods for manufacturing the same
06/16/2011DE10324836B4 Verfahren zur Herstellung eines Hableiterbauelements mit Stabilisierung der Dotierungskonzentration in einem Halbleiterbauelement mit einem epitaxial gefüllten Graben A method for producing a Hableiterbauelements with stabilization of the impurity concentration in a semiconductor device having a epitaxially filled trench
06/16/2011DE10225864B4 Halbleiterbauteil Semiconductor device
06/16/2011DE10224003B4 Halbleitervorrichtung und Verfahren für ihre Herstellung Semiconductor device and methods for their preparation
06/16/2011DE102010062721A1 Halbleiterbauelement mit verbessertem Einschaltwiderstand A semiconductor device having an improved on-
06/16/2011DE10106006B4 SJ-Halbleiterbauelement und Verfahren zu dessen Herstellung SJ-semiconductor device and process for its preparation
06/16/2011DE10009346B4 Integrierte Schreib-/Leseschaltung zur Auswertung von zumindest einer Bitline in einem DRAM Speicher Integrated read / write circuit for evaluating at least one bitline in a DRAM memory
06/16/2011CA2780459A1 Methods of making semiconductor devices having implanted sidewalls and devices made thereby
06/15/2011EP2333840A1 Display panel and display device using the same
06/15/2011EP2333839A1 Insulated gate bipolar transistor and method of making the same
06/15/2011EP2333838A2 Flash memory cell on SeOI
06/15/2011EP2333833A1 Circuit of uniform transistors on SOI with buried back control gate beneath the insulating film
06/15/2011EP2333823A2 Highly conductive source/drain contacts in lll- nitride transistors
06/15/2011EP2333822A2 High voltage durability III-nitride semiconductor device
06/15/2011EP2333779A1 Method of controlling a SeOI dram memory cell having a second control gate buried under the insulating layer
06/15/2011EP2332168A1 Dislocation engineering using a scanned laser
06/15/2011EP2097904B1 Memory cell, and method for storing data
06/15/2011EP2003686B1 Field effect transistor
06/15/2011EP1468450B1 Wide bandgap bipolar transistors
06/15/2011EP1434272B1 Production method for semiconductor device
06/15/2011CN201868437U Discharge tube chip
06/15/2011CN201868431U Overcurrent and overvoltage protection integrated circuit (IC) chip
06/15/2011CN1929927B Thin film of condensed polycyclc aromatic compound, and method for preparing thin film of condensed polycyclc aromatic compound
06/15/2011CN1664683B 电子电路 Electronic circuit
06/15/2011CN1523668B 半导体器件 Semiconductor devices
06/15/2011CN102099921A Geometric diode, applications and method
06/15/2011CN102099920A LDMOS having a field plate
06/15/2011CN102099919A Vertical mosfet with through-body via for gate
06/15/2011CN102099918A 光电子半导体器件 Optoelectronic semiconductor device
06/15/2011CN102099913A Nanostructured memory device
06/15/2011CN102099902A Method of forming finned semiconductor devices with trench isolation