Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2011
06/02/2011US20110127595 Integrated circuit devices including a multi-layer structure with a contact extending therethrough
06/02/2011US20110127594 Semiconductor device and manufacturing the same
06/02/2011US20110127592 Method of manufacturing semiconductor device, semiconductor device, solid-state imaging device, and solid-state imaging apparatus
06/02/2011US20110127591 Method for programming an anti-fuse element, and semiconductor device
06/02/2011US20110127590 Increasing stability of a high-k gate dielectric of a high-k gate stack by an oxygen rich titanium nitride cap layer
06/02/2011US20110127589 Semiconductor structure haivng a metal gate and method of forming the same
06/02/2011US20110127588 Enhancing mosfet performance by optimizing stress properties
06/02/2011US20110127587 Semiconductor device and method for forming the same
06/02/2011US20110127585 Lateral junction field-effect transistor
06/02/2011US20110127584 Method for manufacturing infrared image sensor and infrared image sensor
06/02/2011US20110127582 Multiplying pattern density by single sidewall imaging transfer
06/02/2011US20110127581 Heterostructure for electronic power components, optoelectronic or photovoltaic components
06/02/2011US20110127580 Capacitor-less memory device
06/02/2011US20110127579 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
06/02/2011US20110127578 Manufacturing method for semiconductor device and semiconductor device
06/02/2011US20110127577 Latch-up free vertical TVS diode array structure using trench isolation
06/02/2011US20110127576 Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method
06/02/2011US20110127575 Semiconductor device
06/02/2011US20110127573 Bi-directional transistor with by-pass path and method therefor
06/02/2011US20110127572 Gated resonant tunneling diode
06/02/2011US20110127545 Compound semiconductor device with t-shaped gate electrode
06/02/2011US20110127544 Group iii nitride templates and related heterostructures, devices, and methods for making them
06/02/2011US20110127543 Semiconductor device
06/02/2011US20110127542 Semiconductor device and method of fabricating the same
06/02/2011US20110127541 Semiconductor heterostructure diodes
06/02/2011US20110127540 Semiconductor device
06/02/2011US20110127531 Display device, tft substrate, and method of fabricating the tft substrate
06/02/2011US20110127530 Semiconductor integrated circuit device
06/02/2011US20110127526 Non-linear element, display device including non-linear element, and electronic device including display device
06/02/2011US20110127525 Semiconductor device
06/02/2011US20110127524 Semiconductor device and method for manufacturing the same
06/02/2011US20110127523 Semiconductor device and manufacturing method thereof
06/02/2011US20110127522 Semiconductor device and method for manufacturing the same
06/02/2011US20110127521 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
06/02/2011US20110127520 Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same
06/02/2011US20110127519 Organic light emitting display device and method of manufacturing the same
06/02/2011US20110127518 Transistor, method of manufacturing the transistor and electronic device including the transistor
06/02/2011US20110127504 Organic Thin Film Transistors
06/02/2011US20110127493 Self aligned carbide source/drain fet
06/02/2011US20110127492 Field Effect Transistor Having Nanostructure Channel
06/02/2011US20110127490 Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof
06/02/2011US20110127488 Uses of a carbon nanobud molecule and devices comprising the same
06/02/2011US20110127487 Electronic device for a reconfigurable logic circuit
06/01/2011EP2328180A1 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
06/01/2011EP2328179A1 Molecular device, method for manufacturing the molecular device, integrated circuit device, method for manufacturing the integtrated circuit device, three-dimensional integrated circuit device, and method for manufacturing the three-dimensional integrated circuit device
06/01/2011EP2328169A1 Motherboard, motherboard manufacturing method and device board
06/01/2011EP2327734A1 Polymer compound and polymer light-emitting element utilizing same
06/01/2011EP2327101A1 Surface-textured encapsulations for use with light emitting diodes
06/01/2011EP2327098A2 Method and apparatus for enhancing the triggering of an electrostatic discharge protection device
06/01/2011EP2327070A1 Display device
06/01/2011EP2327069A1 Display device
06/01/2011EP1782460B1 Method for fabricating a floating gate memory cell
06/01/2011EP1652237B1 Backside thinning of image array devices
06/01/2011EP1214737B1 A method of producing a schottky varicap diode
06/01/2011DE112009001882T5 OLED-Anzeige mit aktiver Matrix und Treiber hierfür OLED active matrix display and driver for this
06/01/2011DE10344039B4 Elektrisch programmierbarer nichtflüchtiger Speicher auf Basis eines Schwellwert veränderbaren MOSFET und ein Verfahren zu dessen Herstellung The electrically programmable non-volatile memory on the basis of a variable threshold MOSFET and a method for its preparation
06/01/2011DE10222764B4 Halbleitervaraktor und damit aufgebauter Oszillator Halbleitervaraktor and thus constructed oscillator
06/01/2011DE102009055717A1 Sensormodul und Herstellungsverfahren eines Sensormoduls Sensor module and manufacturing method of a sensor module
06/01/2011DE102009051317A1 Method for producing semiconductor component e.g. FET utilized for controlling washing machine, involves accomplishing temperature treatment for diffusing precious metal i.e. platinum, or heavy metal into silicon semiconductor substrate
06/01/2011DE102009047313A1 Leistungssteigerung in Transistoren mit einem Metallgatestapel mit großem ε durch eine frühe Implantation der Erweiterungsgebiete Performance increase in transistors with metal gate stack with large ε by an early implantation of the extension regions
06/01/2011DE102009047307A1 Vergrößerung der Stabilität eines Gatedielektrikums mit großem ε in einem Gatestapel mit großem ε durch eine sauerstoffreiche Titannitriddeckschicht Increasing the stability of a gate dielectric with large ε in a gate stack with large ε by an oxygen-rich Titannitriddeckschicht
06/01/2011DE102009047304A1 Leistungssteigerung in PFET-Transistoren mit einem Metallgatestapel mit großem ε durch Verbessern des Dotierstoffeinschlusses Performance improvement in PFET transistors with metal gate stack with large ε by improving the Dotierstoffeinschlusses
06/01/2011DE102006023682B4 Verfahren zum Herstellen eines Transistors in einem nichtflüchtigen Speicher und nichtflüchtiger Speicher A method of manufacturing a transistor in a non-volatile memory and non-volatile memory
06/01/2011CN201853711U Infrared GaAs-based N-junction complete electrode voltage-dividing diode chip and circuit thereof
06/01/2011CN201853710U Depletion N-type transversely double-diffused metal oxide semiconductor transistor for voltage reduction
06/01/2011CN201853709U High-speed thyristor with novel layout on short circuit points
06/01/2011CN201853707U Silicon-on-insulator N-type semiconductor combined device capable of increasing current density
06/01/2011CN1934686B Field effect transistor and method of manufacturing a field effect transistor
06/01/2011CN1762056B Semiconductor device with tensile strained substrate and method of making the same
06/01/2011CN102084512A Switching element
06/01/2011CN102084511A Triple-gate or multi-gate component based on the tunneling effect
06/01/2011CN102084489A Dynamically-driven deep N-well circuit
06/01/2011CN102084488A Nanostructured MOS capacitor
06/01/2011CN102084487A Junction barrier schottky diodes with current surge capability
06/01/2011CN102084486A Thin film transistor and display device
06/01/2011CN102084485A Organic thin-film transistor
06/01/2011CN102084484A Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
06/01/2011CN102084483A Semiconductor element and manufacturing method therefor
06/01/2011CN102084470A Capping layers for metal oxynitride tfts
06/01/2011CN102084463A Dielectric cap above floating gate
06/01/2011CN102084258A Capacitance detection type movable sensor
06/01/2011CN102082183A Device and system for electrostatic discharge protection
06/01/2011CN102082182A Polycrystalline diode applying germanium-silicon process and manufacturing method thereof
06/01/2011CN102082181A Thin film transistor structure of pixel circuit for organic light emitting device
06/01/2011CN102082180A Thin film transistor, display device, and electronic device
06/01/2011CN102082179A Thin film transistor and pixel structure with same
06/01/2011CN102082178A Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof
06/01/2011CN102082177A Bulk silicon LDMOS (Laterally Diffused Metal Oxide Semiconductor) device modulated in bulk electric field
06/01/2011CN102082176A Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof
06/01/2011CN102082175A 集成电路结构 Integrated circuit structure
06/01/2011CN102082174A High voltage devices and methods for forming the high voltage devices
06/01/2011CN102082173A Raceway-shaped N-type laterally diffused metal oxide semiconductor (NLDMOS) transistor and manufacturing method thereof
06/01/2011CN102082172A Polycrystalline triode manufactured by applying germanium silicon technology and manufacture method thereof
06/01/2011CN102082171A Electrode of semiconductor device and method for fabricating capacitor
06/01/2011CN102082170A Amorphous oxide semiconductor material, field-effect transistor, and display device
06/01/2011CN102082169A Partial SOI (silicon on insulator) traverse double-diffused device
06/01/2011CN102082168A Staggered column superjunction
06/01/2011CN102082167A Semiconductor nanostructure
06/01/2011CN102082166A Organic light-emitting display
06/01/2011CN102082148A ESD (electrostatic discharge) protection circuit and manufacturing method thereof