Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/02/2011 | US20110127595 Integrated circuit devices including a multi-layer structure with a contact extending therethrough |
06/02/2011 | US20110127594 Semiconductor device and manufacturing the same |
06/02/2011 | US20110127592 Method of manufacturing semiconductor device, semiconductor device, solid-state imaging device, and solid-state imaging apparatus |
06/02/2011 | US20110127591 Method for programming an anti-fuse element, and semiconductor device |
06/02/2011 | US20110127590 Increasing stability of a high-k gate dielectric of a high-k gate stack by an oxygen rich titanium nitride cap layer |
06/02/2011 | US20110127589 Semiconductor structure haivng a metal gate and method of forming the same |
06/02/2011 | US20110127588 Enhancing mosfet performance by optimizing stress properties |
06/02/2011 | US20110127587 Semiconductor device and method for forming the same |
06/02/2011 | US20110127585 Lateral junction field-effect transistor |
06/02/2011 | US20110127584 Method for manufacturing infrared image sensor and infrared image sensor |
06/02/2011 | US20110127582 Multiplying pattern density by single sidewall imaging transfer |
06/02/2011 | US20110127581 Heterostructure for electronic power components, optoelectronic or photovoltaic components |
06/02/2011 | US20110127580 Capacitor-less memory device |
06/02/2011 | US20110127579 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
06/02/2011 | US20110127578 Manufacturing method for semiconductor device and semiconductor device |
06/02/2011 | US20110127577 Latch-up free vertical TVS diode array structure using trench isolation |
06/02/2011 | US20110127576 Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method |
06/02/2011 | US20110127575 Semiconductor device |
06/02/2011 | US20110127573 Bi-directional transistor with by-pass path and method therefor |
06/02/2011 | US20110127572 Gated resonant tunneling diode |
06/02/2011 | US20110127545 Compound semiconductor device with t-shaped gate electrode |
06/02/2011 | US20110127544 Group iii nitride templates and related heterostructures, devices, and methods for making them |
06/02/2011 | US20110127543 Semiconductor device |
06/02/2011 | US20110127542 Semiconductor device and method of fabricating the same |
06/02/2011 | US20110127541 Semiconductor heterostructure diodes |
06/02/2011 | US20110127540 Semiconductor device |
06/02/2011 | US20110127531 Display device, tft substrate, and method of fabricating the tft substrate |
06/02/2011 | US20110127530 Semiconductor integrated circuit device |
06/02/2011 | US20110127526 Non-linear element, display device including non-linear element, and electronic device including display device |
06/02/2011 | US20110127525 Semiconductor device |
06/02/2011 | US20110127524 Semiconductor device and method for manufacturing the same |
06/02/2011 | US20110127523 Semiconductor device and manufacturing method thereof |
06/02/2011 | US20110127522 Semiconductor device and method for manufacturing the same |
06/02/2011 | US20110127521 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
06/02/2011 | US20110127520 Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same |
06/02/2011 | US20110127519 Organic light emitting display device and method of manufacturing the same |
06/02/2011 | US20110127518 Transistor, method of manufacturing the transistor and electronic device including the transistor |
06/02/2011 | US20110127504 Organic Thin Film Transistors |
06/02/2011 | US20110127493 Self aligned carbide source/drain fet |
06/02/2011 | US20110127492 Field Effect Transistor Having Nanostructure Channel |
06/02/2011 | US20110127490 Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof |
06/02/2011 | US20110127488 Uses of a carbon nanobud molecule and devices comprising the same |
06/02/2011 | US20110127487 Electronic device for a reconfigurable logic circuit |
06/01/2011 | EP2328180A1 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element |
06/01/2011 | EP2328179A1 Molecular device, method for manufacturing the molecular device, integrated circuit device, method for manufacturing the integtrated circuit device, three-dimensional integrated circuit device, and method for manufacturing the three-dimensional integrated circuit device |
06/01/2011 | EP2328169A1 Motherboard, motherboard manufacturing method and device board |
06/01/2011 | EP2327734A1 Polymer compound and polymer light-emitting element utilizing same |
06/01/2011 | EP2327101A1 Surface-textured encapsulations for use with light emitting diodes |
06/01/2011 | EP2327098A2 Method and apparatus for enhancing the triggering of an electrostatic discharge protection device |
06/01/2011 | EP2327070A1 Display device |
06/01/2011 | EP2327069A1 Display device |
06/01/2011 | EP1782460B1 Method for fabricating a floating gate memory cell |
06/01/2011 | EP1652237B1 Backside thinning of image array devices |
06/01/2011 | EP1214737B1 A method of producing a schottky varicap diode |
06/01/2011 | DE112009001882T5 OLED-Anzeige mit aktiver Matrix und Treiber hierfür OLED active matrix display and driver for this |
06/01/2011 | DE10344039B4 Elektrisch programmierbarer nichtflüchtiger Speicher auf Basis eines Schwellwert veränderbaren MOSFET und ein Verfahren zu dessen Herstellung The electrically programmable non-volatile memory on the basis of a variable threshold MOSFET and a method for its preparation |
06/01/2011 | DE10222764B4 Halbleitervaraktor und damit aufgebauter Oszillator Halbleitervaraktor and thus constructed oscillator |
06/01/2011 | DE102009055717A1 Sensormodul und Herstellungsverfahren eines Sensormoduls Sensor module and manufacturing method of a sensor module |
06/01/2011 | DE102009051317A1 Method for producing semiconductor component e.g. FET utilized for controlling washing machine, involves accomplishing temperature treatment for diffusing precious metal i.e. platinum, or heavy metal into silicon semiconductor substrate |
06/01/2011 | DE102009047313A1 Leistungssteigerung in Transistoren mit einem Metallgatestapel mit großem ε durch eine frühe Implantation der Erweiterungsgebiete Performance increase in transistors with metal gate stack with large ε by an early implantation of the extension regions |
06/01/2011 | DE102009047307A1 Vergrößerung der Stabilität eines Gatedielektrikums mit großem ε in einem Gatestapel mit großem ε durch eine sauerstoffreiche Titannitriddeckschicht Increasing the stability of a gate dielectric with large ε in a gate stack with large ε by an oxygen-rich Titannitriddeckschicht |
06/01/2011 | DE102009047304A1 Leistungssteigerung in PFET-Transistoren mit einem Metallgatestapel mit großem ε durch Verbessern des Dotierstoffeinschlusses Performance improvement in PFET transistors with metal gate stack with large ε by improving the Dotierstoffeinschlusses |
06/01/2011 | DE102006023682B4 Verfahren zum Herstellen eines Transistors in einem nichtflüchtigen Speicher und nichtflüchtiger Speicher A method of manufacturing a transistor in a non-volatile memory and non-volatile memory |
06/01/2011 | CN201853711U Infrared GaAs-based N-junction complete electrode voltage-dividing diode chip and circuit thereof |
06/01/2011 | CN201853710U Depletion N-type transversely double-diffused metal oxide semiconductor transistor for voltage reduction |
06/01/2011 | CN201853709U High-speed thyristor with novel layout on short circuit points |
06/01/2011 | CN201853707U Silicon-on-insulator N-type semiconductor combined device capable of increasing current density |
06/01/2011 | CN1934686B Field effect transistor and method of manufacturing a field effect transistor |
06/01/2011 | CN1762056B Semiconductor device with tensile strained substrate and method of making the same |
06/01/2011 | CN102084512A Switching element |
06/01/2011 | CN102084511A Triple-gate or multi-gate component based on the tunneling effect |
06/01/2011 | CN102084489A Dynamically-driven deep N-well circuit |
06/01/2011 | CN102084488A Nanostructured MOS capacitor |
06/01/2011 | CN102084487A Junction barrier schottky diodes with current surge capability |
06/01/2011 | CN102084486A Thin film transistor and display device |
06/01/2011 | CN102084485A Organic thin-film transistor |
06/01/2011 | CN102084484A Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
06/01/2011 | CN102084483A Semiconductor element and manufacturing method therefor |
06/01/2011 | CN102084470A Capping layers for metal oxynitride tfts |
06/01/2011 | CN102084463A Dielectric cap above floating gate |
06/01/2011 | CN102084258A Capacitance detection type movable sensor |
06/01/2011 | CN102082183A Device and system for electrostatic discharge protection |
06/01/2011 | CN102082182A Polycrystalline diode applying germanium-silicon process and manufacturing method thereof |
06/01/2011 | CN102082181A Thin film transistor structure of pixel circuit for organic light emitting device |
06/01/2011 | CN102082180A Thin film transistor, display device, and electronic device |
06/01/2011 | CN102082179A Thin film transistor and pixel structure with same |
06/01/2011 | CN102082178A Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof |
06/01/2011 | CN102082177A Bulk silicon LDMOS (Laterally Diffused Metal Oxide Semiconductor) device modulated in bulk electric field |
06/01/2011 | CN102082176A Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof |
06/01/2011 | CN102082175A 集成电路结构 Integrated circuit structure |
06/01/2011 | CN102082174A High voltage devices and methods for forming the high voltage devices |
06/01/2011 | CN102082173A Raceway-shaped N-type laterally diffused metal oxide semiconductor (NLDMOS) transistor and manufacturing method thereof |
06/01/2011 | CN102082172A Polycrystalline triode manufactured by applying germanium silicon technology and manufacture method thereof |
06/01/2011 | CN102082171A Electrode of semiconductor device and method for fabricating capacitor |
06/01/2011 | CN102082170A Amorphous oxide semiconductor material, field-effect transistor, and display device |
06/01/2011 | CN102082169A Partial SOI (silicon on insulator) traverse double-diffused device |
06/01/2011 | CN102082168A Staggered column superjunction |
06/01/2011 | CN102082167A Semiconductor nanostructure |
06/01/2011 | CN102082166A Organic light-emitting display |
06/01/2011 | CN102082148A ESD (electrostatic discharge) protection circuit and manufacturing method thereof |