| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/07/2011 | WO2011080928A1 Semiconductor device and electric power conversion device using same |
| 07/07/2011 | WO2011080927A1 Magnetron sputtering device and method for manufacturing electronic components |
| 07/07/2011 | WO2011080879A1 Active matrix substrate and method for manufacturing same |
| 07/07/2011 | WO2011080863A1 Photosensor element, photosensor circuit, thin-film transistor substrate, and display panel |
| 07/07/2011 | WO2011080857A1 Process for production of semiconductor device, and plasma doping device |
| 07/07/2011 | WO2011079605A1 Transistor and manufacturing method thereof |
| 07/07/2011 | WO2011079604A1 Semiconductor device and manufacturing method thereof |
| 07/07/2011 | WO2011079602A1 Semiconductor device and method for producing the same |
| 07/07/2011 | WO2011079595A1 Fin transistor structure and fabrication method thereof |
| 07/07/2011 | WO2011079594A1 Semiconductor device and method of manufacturing the same |
| 07/07/2011 | WO2011079533A1 Pixel structure |
| 07/07/2011 | WO2011037743A3 Method and structure for forming high-performance fets with embedded stressors |
| 07/07/2011 | WO2011031431A3 Semiconductor devices with field plates |
| 07/07/2011 | US20110166045 Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same |
| 07/07/2011 | US20110165767 SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS |
| 07/07/2011 | US20110165718 Integrated getter area for wafer level encapsulated microelectromechanical systems |
| 07/07/2011 | US20110164808 Techniques providing fiducial markers for failure analysis |
| 07/07/2011 | US20110163745 Construction element made of a ferromagnetic shape memory material and use thereof |
| 07/07/2011 | US20110163743 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element |
| 07/07/2011 | US20110163424 Molecular Self-Assembly In Substrate Processing |
| 07/07/2011 | US20110163422 Manufacturing method of semiconductor device, semiconductor device, and method of printing on semiconductor wafer |
| 07/07/2011 | US20110163421 Method for Fabricating Optical Semiconductor Tubes and Devices Thereof |
| 07/07/2011 | US20110163420 Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features |
| 07/07/2011 | US20110163419 Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits |
| 07/07/2011 | US20110163417 Method to dynamically tune precision resistance |
| 07/07/2011 | US20110163416 Methods for forming small-scale capacitor structures |
| 07/07/2011 | US20110163415 Semiconductor device and method for manufacturing the same |
| 07/07/2011 | US20110163414 Semiconductor Device Having Embedded Integrated Passive Devices Electrically Interconnected Using Conductive Pillars |
| 07/07/2011 | US20110163412 Isolator and method of manufacturing the same |
| 07/07/2011 | US20110163410 Method for producing hybrid components |
| 07/07/2011 | US20110163409 Semiconductor device |
| 07/07/2011 | US20110163408 Schottky diode with low reverse leakage current and low forward voltage drop |
| 07/07/2011 | US20110163402 Magnetic memory and method of manufacturing the same |
| 07/07/2011 | US20110163401 Semiconductor device having memory element with stress insulating film |
| 07/07/2011 | US20110163400 Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element |
| 07/07/2011 | US20110163399 Method for Manufacturing Microelectronic Devices and Devices According to Such Methods |
| 07/07/2011 | US20110163398 Method for manufacturing separated micromechanical components situated on a silicon substrate and components manufactured therefrom |
| 07/07/2011 | US20110163397 Composition and Manufacturing Method |
| 07/07/2011 | US20110163396 Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component |
| 07/07/2011 | US20110163395 Pressure Sensor and Method |
| 07/07/2011 | US20110163394 Semiconductor contact structure and method of fabricating the same |
| 07/07/2011 | US20110163392 Semiconductor device and method of manufacturing the same |
| 07/07/2011 | US20110163386 Semiconductor Devices Including Dehydrogenated Interlayer Dielectric Layers |
| 07/07/2011 | US20110163385 Asymmetric fet including sloped threshold voltage adjusting material layer and method of fabricating same |
| 07/07/2011 | US20110163381 Semiconductor substrate, semiconductor device and manufacturing method thereof |
| 07/07/2011 | US20110163380 Body-Tied Asymmetric N-Type Field Effect Transistor |
| 07/07/2011 | US20110163379 Body-Tied Asymmetric P-Type Field Effect Transistor |
| 07/07/2011 | US20110163378 Layout structure of power mos transistor |
| 07/07/2011 | US20110163377 Semiconductor device and method for manufacturing the same |
| 07/07/2011 | US20110163375 High-Voltage MOS Devices Having Gates Extending into Recesses of Substrates |
| 07/07/2011 | US20110163374 Trench-typed power mos transistor and method for making the same |
| 07/07/2011 | US20110163373 Semiconductor device including a voltage controlled termination structure and method for fabricating same |
| 07/07/2011 | US20110163371 Methods of fabricating nonvolatile semiconductor memory devices |
| 07/07/2011 | US20110163369 Surrounding stacked gate multi-gate fet structure nonvolatile memory device |
| 07/07/2011 | US20110163368 Semiconductor Memory Device and Manufacturing Method Thereof |
| 07/07/2011 | US20110163367 Semiconductor Devices Comprising a Plurality of Gate Structures |
| 07/07/2011 | US20110163360 Method for forming a transistor having gate dielectric protection and structure |
| 07/07/2011 | US20110163359 Lithography for printing constant line width features |
| 07/07/2011 | US20110163358 Semiconductor device and method for fabricating the same |
| 07/07/2011 | US20110163357 Method for fabricating semiconductor devices using stress engineering |
| 07/07/2011 | US20110163356 Hybrid transistor |
| 07/07/2011 | US20110163355 Field effect transistor and method for manufacturing the same |
| 07/07/2011 | US20110163354 Epitaxial silicon growth |
| 07/07/2011 | US20110163353 Gas sensor |
| 07/07/2011 | US20110163351 Low Voltage Power Supply |
| 07/07/2011 | US20110163326 Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate |
| 07/07/2011 | US20110163325 METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER |
| 07/07/2011 | US20110163324 Light emitting device |
| 07/07/2011 | US20110163323 GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME |
| 07/07/2011 | US20110163321 Nrom flash memory devices on ultrathin silicon |
| 07/07/2011 | US20110163320 Semiconductor Device, Driving Method Thereof and Electronic Device |
| 07/07/2011 | US20110163316 Thin film transistor and semiconductor device |
| 07/07/2011 | US20110163315 Display device |
| 07/07/2011 | US20110163314 Nitrogen-oxide gas sensor with long signal stability |
| 07/07/2011 | US20110163313 Bulk silicon wafer product useful in the manufacture of three dimensional multigate mosfets |
| 07/07/2011 | US20110163312 Semiconductor-on-diamond devices and methods of forming |
| 07/07/2011 | US20110163311 Semiconductor Device and Manufacturing Method Thereof |
| 07/07/2011 | US20110163310 Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
| 07/07/2011 | US20110163307 Thin-film transistor and forming method thereof |
| 07/07/2011 | US20110163298 Graphene and Hexagonal Boron Nitride Devices |
| 07/07/2011 | US20110163297 Core-Shell-Shell Nanowire Transistor |
| 07/07/2011 | US20110163296 Cnt-based sensors: devices, processes and uses thereof |
| 07/07/2011 | US20110163295 Semiconductor with low dislocation |
| 07/07/2011 | US20110163291 Solid state material |
| 07/07/2011 | US20110163290 Methods for passivating a carbonic nanolayer |
| 07/07/2011 | US20110163289 Structure and method of forming buried-channel graphene field effect device |
| 07/07/2011 | US20110162687 Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes |
| 07/07/2011 | DE112004002307B4 Verfahren zur Herstellung eines Transistors und Transistor mit Silizium- und Kohlenstoffschicht in dem Kanalbereich A method of manufacturing a transistor and transistor with silicon and carbon layer in the channel region |
| 07/07/2011 | DE102010053297A1 Halbleiterbauelement mit reduziertem Oberflächenfeldeffekt und Verfahren zu dessen Fertigung A semiconductor device with reduced surface field effect and process for its manufacturing |
| 07/07/2011 | DE102010052071A1 Gehäusesysteme von Mikrosystemtechnik-Mikrofonen Housing systems of Microsystems Engineering microphones |
| 07/07/2011 | DE102009055433A1 Kontaktelemente von Halbleiterbauelementen, die auf der Grundlage einer teilweise aufgebrachten Aktivierungsschicht hergestellt sind Contact elements of semiconductor devices that are formed on the basis of a partially applied activation layer |
| 07/07/2011 | DE102009055395A1 Vordotiertes Halbleitermaterial für eine Metallgateelektrodenstruktur mit großem ε von p-und n-Kanaltransistoren Predoped semiconductor material for a metal gate electrode structure with large ε of p-and n-channel transistors |
| 07/07/2011 | DE102009055394A1 Erhöhung der Abscheidegleichmäßigkeit für eine Kanalhalbleiterlegierung durch Bilden einer Vertiefung vor der Wannenimplantation Increasing the Abscheidegleichmäßigkeit for a channel semiconductor alloy by forming a recess before the well implantation |
| 07/07/2011 | DE102009055393A1 Besserer Einschluss von empfindlichen Materialien einer Metallgateelektrodenstruktur mit großem ε Better inclusion of sensitive materials, a metal gate electrode structure with large ε |
| 07/07/2011 | DE102009031114B4 Halbleiterelement, das in einem kristallinen Substratmaterial hergestellt ist und ein eingebettetes in-situ n-dotiertes Halbleitermaterial aufweist, und Verfahren zur Herstellung desselben Of the same semiconductor element which is manufactured in a crystalline substrate material and comprising an embedded in-situ n-doped semiconductor material, and methods for preparing |
| 07/07/2011 | DE102007056741B4 Feldeffekttransistor und Verfahren zu dessen Herstellung Field effect transistor and method of producing the |
| 07/07/2011 | DE102005029263B4 Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit Semiconductor device with improved dynamic properties |
| 07/07/2011 | DE10112784B4 Halbleiteranordnung, welche einen Leistungs-MOSFET und eine periphere Anordnung enthält, und Verfahren zu deren Herstellung A semiconductor device comprising a power MOSFET and a peripheral device, and process for their preparation |
| 07/06/2011 | EP2341545A1 Igbt and igbt manufacturing method |
| 07/06/2011 | EP2341542A2 Image sensor using light-sensitive transparent oxide semiconductor material |