H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2011
05/26/2011	US20110121288 Semiconductor device
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05/26/2011	US20110121266 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
05/26/2011	US20110121265 Group iii nitride semiconductor optical device
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05/26/2011	US20110121263 Coupled Asymmetric Quantum Confinement Structures
05/26/2011	US20110121260 Quantum dot phosphor for light emitting diode and method of preparing the same
05/26/2011	US20110121258 Rectifying antenna device with nanostructure diode
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05/26/2011	DE102008050495B4 Halbleitervorrichtung Semiconductor device
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05/25/2011	EP2325893A2 Low voltage bidirectional protection diode
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05/25/2011	EP2325874A1 Method of Forming a Transistor and Semiconductor Device
05/25/2011	EP2325873A1 Method for manufacturing a suspended membrane and double-gated MOS transistor
05/25/2011	EP2325872A1 Bipolar semiconductor device and method for manufacturing same
05/25/2011	EP2325871A2 Semiconductor device and method of manufacturing the same
05/25/2011	EP2325869A2 Methods of fabricating silicon carbide devices having channel regions with a smooth surface
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