Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2011
05/19/2011US20110115056 Getter having two activation temperatures and structure comprising this getter
05/19/2011US20110115055 Semiconductor device and manufacturing method thereof
05/19/2011US20110115054 Semispherical integrated circuit structures
05/19/2011US20110115051 Semiconductor devices including 3-d structures with support pad structures and related methods and systems
05/19/2011US20110115050 Semiconductor Device and Method of Forming IPD on Molded Substrate
05/19/2011US20110115049 Non-volatile memory devices, methods of manufacturing and methods of operating the same
05/19/2011US20110115048 Method of forming an isolation structure
05/19/2011US20110115047 Semiconductor process using mask openings of varying widths to form two or more device structures
05/19/2011US20110115046 Method for manufacturing semiconductor substrate, and semiconductor device
05/19/2011US20110115044 Diffusion sidewall for a semiconductor structure
05/19/2011US20110115039 Mems structure and method for making the same
05/19/2011US20110115038 Physical quantity sensor, electronic device, and method of manufacturing physical quantity sensor
05/19/2011US20110115037 Acoustic device with low acoustic loss packaging
05/19/2011US20110115036 Device packages and methods of fabricating the same
05/19/2011US20110115034 Transistor
05/19/2011US20110115033 Semiconductor device and method for manufacturing the same
05/19/2011US20110115032 High-k/metal gate transistor with l-shaped gate encapsulation layer
05/19/2011US20110115027 Structure and method to obtain eot scaled dielectric stacks
05/19/2011US20110115026 Control of threshold voltages in high-k metal gate stack and structures for cmos devices
05/19/2011US20110115022 Implant free extremely thin semiconductor devices
05/19/2011US20110115021 Isolation structures for soi devices with ultrathin soi and ultrathin box
05/19/2011US20110115020 Semiconductor device
05/19/2011US20110115019 Cmos compatible low gate charge lateral mosfet
05/19/2011US20110115018 Mos power transistor
05/19/2011US20110115017 LDMOS transistor with asymmetric spacer as gate
05/19/2011US20110115015 Trench devices having improved breakdown voltages and method for manufacturing same
05/19/2011US20110115013 Non-volatile memory device and method for fabricating the same
05/19/2011US20110115012 Method for fabricating an enlarged oxide-nitride-oxide structure for nand flash memory semiconductor devices
05/19/2011US20110115011 Semiconductor element and semiconductor device
05/19/2011US20110115009 Control gate
05/19/2011US20110115008 Interconnect line selectively isolated from an underlying contact plug
05/19/2011US20110115007 Power Semiconductor Component with Plate Capacitor Structure Having an Edge Plate Electrically Connected to Source or Drain Potential
05/19/2011US20110115001 Electronic control device
05/19/2011US20110115000 Semiconductor Device having Strain Material
05/19/2011US20110114999 Sputtering target and method for manufacturing the same, and transistor
05/19/2011US20110114998 Semiconductor substrate, semiconductor device, and manufacturing method thereof
05/19/2011US20110114997 HIGH VOLTAGE GaN TRANSISTORS
05/19/2011US20110114996 Inducement of Strain in a Semiconductor Layer
05/19/2011US20110114984 Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate
05/19/2011US20110114968 Integrated Nitride and Silicon Carbide-Based Devices
05/19/2011US20110114967 Nitride semiconductor device and method for fabricating the same
05/19/2011US20110114965 Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
05/19/2011US20110114964 Semiconductor device and method of manufacturing thereof
05/19/2011US20110114963 Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same
05/19/2011US20110114961 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same
05/19/2011US20110114959 Semiconductor device and manufacturing method thereof
05/19/2011US20110114957 Thin film transistor and organic light emitting display apparatus
05/19/2011US20110114953 Transistor using derivative polymethyl-methacrylate thin film as gate insulator and passivation layer, and fabrication method thereof
05/19/2011US20110114952 Manufacturing method of semiconductor device
05/19/2011US20110114950 Integrated Circuit Wafer and Integrated Circuit Die
05/19/2011US20110114948 Method for manufacturing semiconductor device
05/19/2011US20110114947 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
05/19/2011US20110114946 Memory device
05/19/2011US20110114945 Semiconductor device and manufacturing method thereof
05/19/2011US20110114944 Sputtering target and manufacturing method thereof, and transistor
05/19/2011US20110114943 Semiconductor device and manufacturing method thereof
05/19/2011US20110114942 Semiconductor device and manufacturing method thereof
05/19/2011US20110114941 Device including nonvolatile memory element
05/19/2011US20110114940 Thin film display panel and method of manufacturing the same
05/19/2011US20110114939 Transistors, electronic devices including a transistor and methods of manufacturing the same
05/19/2011US20110114938 ZnO SEMICONDUCTOR ELEMENT
05/19/2011US20110114937 p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE
05/19/2011US20110114919 Self-aligned graphene transistor
05/19/2011US20110114918 Fabrication of graphene nanoelectronic devices on soi structures
05/19/2011US20110114914 Field effect transistor and circuit device
05/19/2011US20110114913 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
05/19/2011US20110114145 Nanostructures having high performance thermoelectric properties
05/19/2011US20110113881 Acceleration sensor and method of fabricating acceleration sensor
05/19/2011US20110113859 Low-voltage thin-film field-effect transistors
05/19/2011DE102010051478A1 CMOS-kompatibler lateraler MOSFET mit niedriger Gate-Charge CMOS-compatible lateral MOSFET with low gate charge
05/19/2011DE102010051044A1 Verbesserter MOS Leistungstransistor Improved MOS power transistor
05/19/2011DE102010016565A1 Vorrichtung zur Umwandlung elektrischer Leistung für Fahrzeuge An apparatus for converting electric power for vehicles
05/19/2011DE102009053065A1 Hochvolttransistor, ESD-Schutzschaltung und Verwendung eines Hochvolttransistors in einer ESD-Schutzschaltung High-voltage transistor, the ESD protection circuit and use of a high-voltage transistor in an ESD protection circuit
05/19/2011DE102009051521A1 Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für die Integration von Siliziumbauelementen mit auf Gruppe III-V-Schichtstrukturen basierenden High Electron Mobility Transistoren (HEMT) und entsprechende Halbleiterschichtanordnung A method for producing silicon wafers with III-V-layer structures for the integration of silicon devices with on group III-V-layer structures based High Electron Mobility Transistors (HEMT) and the corresponding semiconductor layer assembly
05/19/2011DE102009006801B4 Verfahren zur Herstellung eines Feldeffekt-Kurzkanaltransistors mit geringerer Längenfluktuation durch Verwenden eines amorphen Elektrodenmaterials während der Implantation A method for producing a field effect transistor short channel length with less fluctuation by using an amorphous electrode material during implantation
05/19/2011DE102008046400B4 Verfahren zur Herstellung eines CMOS-Bauelements mit MOS-Transistoren mit abgesenkten Drain- und Sourcebereichen und einem Si/Ge-Material in den Drain- und Sourcebereichen des PMOS-Transistors A method of fabricating a CMOS device including MOS transistors with lowered drain and source regions and a Si / Ge material in the drain and source regions of the PMOS transistor
05/19/2011DE102008025708B4 Kontaktstrukturen für FinFET-Bauelement und Verfahren zur Herstellung Contact FinFET device structures and processes for making
05/19/2011DE102006035121B4 Bipolartransistor mit reduziertem Substratstrom Bipolar transistor with reduced substrate current
05/19/2011DE102004048723B4 Herstellverfahren für ein Dünnschichttransistorarray-Substrat Manufacturing method of a thin film transistor array substrate
05/19/2011CA2757786A1 Method for manufacturing semiconductor substrate
05/19/2011CA2757205A1 Method for manufacturing semiconductor substrate
05/19/2011CA2757200A1 Method for manufacturing semiconductor substrate
05/18/2011EP2323167A1 Transistors, electronic devices including a transistor and methods of manufacturing the same
05/18/2011EP2323166A1 Semiconductor element
05/18/2011EP2323164A2 Dense arrays and charge storage devices, and methods for making same
05/18/2011EP2323160A1 Method for manufacturing field-effect transistors with a counter electrode and semi-conductor device
05/18/2011EP2323159A1 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same
05/18/2011EP2321854A2 Rectifying antenna device with nanostructure diode
05/18/2011EP2321852A1 Rectifier
05/18/2011EP2321850A1 Ldmos having a field plate
05/18/2011EP2321373A1 Modified particles and dispersions comprising said particles
05/18/2011EP1872410B1 A method of making a semiconductor device having an arched structure strained semiconductor layer
05/18/2011EP1509955B1 Apparatus comprising a semiconductor device and analytical circuits, and corresponding methods
05/18/2011EP1161767B1 Method of making a vertical MOS transistor device
05/18/2011EP1138058B1 Method of manufacturing a semiconductor device having a gate with a varying work function
05/18/2011CN201838703U High-temperature superconducting delay line
05/18/2011CN201838597U Testing diode for traveling wave tube cathode
05/18/2011CN201838596U Insulated gate bipolar transistor
05/18/2011CN201838584U Encapsulated triode
05/18/2011CN201838570U Novel diode