Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2011
08/18/2011US20110198558 Graphene circuit board having improved electrical contact between graphene and metal electrode, and device including same
08/18/2011DE19954022B4 Halbleitersensor für eine physikalische Grösse und Verfahren zu dessen Herstellung A semiconductor sensor for a physical quantity, and process for its preparation
08/18/2011DE102011003136A1 Verfahren zur Herstellung eines rückwärts sperrenden Bipolartransistors mit isoliertem Gate A process for the preparation of a reverse blocking insulated gate bipolar transistor
08/18/2011DE102010064410A1 Halbleitervorrichtung mit Bootstrap-Schaltung A semiconductor device comprising bootstrap circuit
08/18/2011DE102010001998A1 Gassensitiver Feldeffekttransistor und Verfahren zur Herstellung eines gassensitiven Feldeffekttransistors Gas-sensitive field-effect transistor and method for producing a gas-sensitive field-effect transistor
08/18/2011DE102006009721B4 Nanodraht (Nanowire)-Speicherzelle und Verfahren zu deren Herstellung Nanowire (Nanowire) memory cell and method for producing them
08/18/2011DE102005011348B4 Halbleitervorrichtung Semiconductor device
08/18/2011DE102004051588B4 Halbleitereinrichtungsgruppe und Verfahren zum Herstellen derselben und Halbleitereinrichtung A semiconductor device group and methods for preparing the same, and semiconductor device
08/18/2011DE102004050507B4 Piezoelektrischer Dünnfilmresonator und diesen nutzendes Filter A piezoelectric thin film resonator and filter-use these
08/18/2011DE102004041904B4 Verfahren zur Einstellung eines Serienwiderstandes am Gate eines Leistungstransistors Method for setting a resistance in series to the gate of a power transistor
08/18/2011DE102004002181B4 Integrierter Transistor, insbesondere für Spannungen größer 40 Volt, und Herstellungsverfahren Integrated transistor, in particular for voltages greater than 40 volts, and manufacturing processes
08/17/2011EP2357672A1 Semiconductor layer and method for forming same
08/17/2011EP2357671A1 Silicon carbide semiconductor device and method for manufacturing the same
08/17/2011EP2357670A1 Semiconductor device
08/17/2011EP2357662A2 Electron blocking layers for gate stacks of nonvolatile memory devices
08/17/2011EP2357661A1 Epitaxial substrate for electronic device and manufacturing method thereof
08/17/2011EP2357659A1 Soi wafer manufacturing method
08/17/2011EP2356685A1 Heterostructure element having a low barrier height and a high current density
08/17/2011EP2036130B1 N-channel mosfets comprising dual stressors, and methods for forming the same
08/17/2011EP1662557B1 Heterojunction bipolar transistor
08/17/2011CN201936886U 沟槽式金属氧化物半导体场效应晶体管 Trench metal-oxide-semiconductor field-effect transistor
08/17/2011CN201936885U 射频横向扩散p型mos管 RF laterally diffused p-type mos tube
08/17/2011CN201936884U 一种mos管及其版图设计装置 One kind mos tube and its layout means
08/17/2011CN1700826B Light-emitting element and display device
08/17/2011CN102160185A Mems传感器 Mems Sensor
08/17/2011CN102160184A Display device
08/17/2011CN102160183A Semiconductor device
08/17/2011CN102160182A Thin film transistor having crystalline indium oxide semiconductor film
08/17/2011CN102160179A Semiconductor device and method for manufacturing same
08/17/2011CN102160159A A transistor with embedded si/ge material having enhanced across-substrate uniformity
08/17/2011CN102160158A Transistor with passive gate and methods of fabricating same
08/17/2011CN102160105A Display device and manufacturing method of the same
08/17/2011CN102160104A Semiconductor device
08/17/2011CN102160103A Display device
08/17/2011CN102160102A Display device
08/17/2011CN102157568A P-N junction surface diode structure of metal oxide semiconductor and manufacturing method thereof
08/17/2011CN102157567A 半导体薄膜晶体管 Semiconductor thin film transistor
08/17/2011CN102157566A Semiconductor device and method for manufacturing the same
08/17/2011CN102157565A Manufacturing method of thin-film transistor
08/17/2011CN102157564A Preparation method of top gate metal oxide thin film transistor (TFT)
08/17/2011CN102157563A Method for manufacturing metal oxide thin film transistor
08/17/2011CN102157562A Method for manufacturing bottom gate metal oxide thin film transistor
08/17/2011CN102157561A Longitudinal channel SOI (silicon on insulator) nLDMOS (n-type laterally diffused metal oxide semiconductor) device unit with p buried layer
08/17/2011CN102157560A High-voltage LDMOS (landscape diffusion metal oxide semiconductor) device
08/17/2011CN102157559A Low-power consumption tunneling field effect transistor (TFET) of fork-structure grid structure
08/17/2011CN102157558A Thin film transistor, method of manufacturing the same, and display unit
08/17/2011CN102157557A High-voltage-resistant lateral double-diffused transistor based on nanowire device
08/17/2011CN102157556A Oxidizing-dephlegmation-based silicon-based wrap gate transistor with buried-channel structure and preparation method thereof
08/17/2011CN102157555A Method of fabricating a finfet device
08/17/2011CN102157554A Fin-type transistor structure and manufacturing method thereof
08/17/2011CN102157553A Structure of asymmetrical semi-conductor and forming method thereof
08/17/2011CN102157552A Thyristor structure with enhanced reliability and production method thereof
08/17/2011CN102157551A IGBT with current carrier storage layer and additional hole passage
08/17/2011CN102157550A SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with p buried layer and longitudinal channel
08/17/2011CN102157549A PN junction and manufacturing method thereof
08/17/2011CN102157548A Transistor based on graphene layer
08/17/2011CN102157547A Short base region structure for improving high voltage and large current tolerance of thyristor and production method thereof
08/17/2011CN102157546A Power supply overvoltage protection structure and manufacture method thereof
08/17/2011CN102157527A Semiconductor memory devices
08/17/2011CN102157517A Electrostatic protection structure
08/17/2011CN102157493A Metal plug and manufacturing method thereof
08/17/2011CN102157448A Method of forming a semiconductor die
08/17/2011CN102157432A GeOI structure and formation method thereof
08/17/2011CN102157387A Thin film transistor and manufacture method thereof
08/17/2011CN102157385A LDMOS (Lateral Double-diffused Metal Oxide Semiconductor) device and manufacturing method thereof
08/17/2011CN102157380A Methods of manufacturing semiconductor devices
08/17/2011CN102157379A High-performance semiconductor device and manufacturing method thereof
08/17/2011CN102157377A Super-junction VDMOS (Vertical Double-diffused Metal Oxide Semiconductor) device and manufacturing method thereof
08/17/2011CN102157362A Metal gate electrode using silicidation and method of formation thereof
08/17/2011CN102154704A Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device
08/17/2011CN101772842B Semiconductor device, method for manufacturing the same and image display
08/17/2011CN101697350B Multi-point silicon transistor with double ultra sallow isolation structures
08/17/2011CN101689560B Semiconductor device
08/17/2011CN101689508B Method for forming a dual metal gate structure
08/17/2011CN101667624B Field-effect transistor
08/17/2011CN101656267B High-heat stability power hetero-junction bipolar transistor
08/17/2011CN101621035B Amorphous silicon MONOS or MAS memory cell structure with OTP function
08/17/2011CN101572236B Semiconductor device and method for forming same
08/17/2011CN101517716B Method for forming silicon oxide film, plasma processing apparatus
08/17/2011CN101470309B Reflection and transmission type LCD and its fabrication method
08/17/2011CN101410968B Improved CMOS devices with stressed channel regions, and methods for fabricating the same
08/17/2011CN101320601B Silicon carbide Schottky junction type nuclear cell and preparation thereof
08/17/2011CN101258587B Semiconductor power device with multiple drain structure and corresponding manufacturing process
08/17/2011CN101252148B Nonvolatile memory electronic device and its manufacture method
08/17/2011CN101211986B Non-volatile memorizer writing method
08/17/2011CN101206363B Electrooptic device and electronic device
08/16/2011US8001491 Organic thin film transistor and method of fabricating the same
08/16/2011US8000126 Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
08/16/2011US7999786 Electrophoretic display and method of manufacturing the same
08/16/2011US7999463 Light emitting device
08/16/2011US7999397 Microelectronic packages and methods therefor
08/16/2011US7999395 Pillar structure on bump pad
08/16/2011US7999393 Semiconductor device and manufacturing method thereof
08/16/2011US7999392 Multilayer wiring structure, semiconductor device, pattern transfer mask and method for manufacturing multilayer wiring structure
08/16/2011US7999391 Multilayered wiring structure, and method for manufacturing multilayered wiring
08/16/2011US7999386 Semiconductor device including a guard ring surrounding an inductor
08/16/2011US7999385 Semiconductor device
08/16/2011US7999384 Top layers of metal for high performance IC's
08/16/2011US7999382 Semiconductor device and fabrication method for the same
08/16/2011US7999380 Process for manufacturing substrate with bumps and substrate structure