| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/01/2011 | WO2011104893A1 Organic electroluminescence display and method of manufacturing organic electroluminescence display |
| 09/01/2011 | WO2011104850A1 Semiconductor device and production method therefor |
| 09/01/2011 | WO2011104791A1 Thin film transistor substrate, manufacturing method therefor, and display device |
| 09/01/2011 | WO2011104788A1 Method for manufacturing a semiconductor device |
| 09/01/2011 | WO2011104782A1 Semiconductor device |
| 09/01/2011 | WO2011104775A1 Semiconductor device |
| 09/01/2011 | WO2011104773A1 Non-volatile semiconductor storage device |
| 09/01/2011 | WO2011103735A1 Fabricating method of copper interconnection structure with mim capacitor and structure fabricated thereby |
| 09/01/2011 | WO2011008328A3 High breakdown voltage wide band-gap mos-gated bipolar junction transistors with avalanche capability |
| 09/01/2011 | US20110212609 Method of manufacturing a semiconductor device |
| 09/01/2011 | US20110212579 Fully Depleted SOI Multiple Threshold Voltage Application |
| 09/01/2011 | US20110212575 Method for manufacturing thin film integrated circuit, and element substrate |
| 09/01/2011 | US20110211394 Field effect transistors for a flash memory comprising a self-aligned charge storage region |
| 09/01/2011 | US20110211392 Cell string of a memory cell array and method of erasing the same |
| 09/01/2011 | US20110211389 Magnetoresistive element and magnetoresistive random access memory including the same |
| 09/01/2011 | US20110211130 Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, and television receiver |
| 09/01/2011 | US20110210956 Current sensor for a semiconductor device and system |
| 09/01/2011 | US20110210783 Transistor including reentrant profile |
| 09/01/2011 | US20110210445 Semiconductor device having via connecting between interconnects |
| 09/01/2011 | US20110210435 Mems devices |
| 09/01/2011 | US20110210427 Strain memorization in strained soi substrates of semiconductor devices |
| 09/01/2011 | US20110210426 Semiconductor device providing a first electrical conductor and a second electrical conductor in one through hole and method for manufacturing the same |
| 09/01/2011 | US20110210425 Formation of group iii-v material layers on patterned substrates |
| 09/01/2011 | US20110210424 Semiconductor device and method for manufacturing the same |
| 09/01/2011 | US20110210423 Integrated circuit devices having a strontium ruthenium oxide interface |
| 09/01/2011 | US20110210422 Semiconductor device and method for manufacturing the same |
| 09/01/2011 | US20110210421 Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor device |
| 09/01/2011 | US20110210420 Semiconductor Device Having IPD Structure with Smooth Conductive Layer and Bottom-Side Conductive Layer |
| 09/01/2011 | US20110210418 Electrostatic Discharge Devices |
| 09/01/2011 | US20110210417 Semiconductor device isolation structures |
| 09/01/2011 | US20110210415 Freestanding carbon nanotube networks based temperature sensor |
| 09/01/2011 | US20110210414 Infrared sensor |
| 09/01/2011 | US20110210412 Memory element, memory device, and semiconductor device |
| 09/01/2011 | US20110210411 Ultra thin flip-chip backside device sensor package |
| 09/01/2011 | US20110210410 Magnetic shielding in magnetic multilayer structures |
| 09/01/2011 | US20110210409 Surface Mount Silicon Condenser Microphone Package |
| 09/01/2011 | US20110210408 Sensor device, method of manufacturing sensor device, motion sensor, and method of manufacturing motion sensor |
| 09/01/2011 | US20110210407 Double-faced adhesive film and electronic component module using same |
| 09/01/2011 | US20110210406 Structures of and methods of fabricating split gate mis devices |
| 09/01/2011 | US20110210405 Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device |
| 09/01/2011 | US20110210404 Epitaxy Profile Engineering for FinFETs |
| 09/01/2011 | US20110210403 Novel structures and methods to stop contact metal from extruding into replacement gates |
| 09/01/2011 | US20110210401 Multilayer silicon nitride deposition for a semiconductor device |
| 09/01/2011 | US20110210398 Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials |
| 09/01/2011 | US20110210397 One-time programmable semiconductor device |
| 09/01/2011 | US20110210396 Semiconductor device |
| 09/01/2011 | US20110210394 Semiconductor Device |
| 09/01/2011 | US20110210393 Dual epitaxial process for a finfet device |
| 09/01/2011 | US20110210392 Power semiconductor device |
| 09/01/2011 | US20110210391 Semiconductor device |
| 09/01/2011 | US20110210390 Mos device with varying trench depth |
| 09/01/2011 | US20110210389 Transistor Comprising a Buried High-K Metal Gate Electrode Structure |
| 09/01/2011 | US20110210387 Nonvolatile semiconductor memory device |
| 09/01/2011 | US20110210386 Devices with nanocrystals and methods of formation |
| 09/01/2011 | US20110210385 Non-volatile Semiconductor Device, Programmable Memory, Capacitor and Metal Oxide Semiconductor |
| 09/01/2011 | US20110210380 Contact bars with reduced fringing capacitance in a semiconductor device |
| 09/01/2011 | US20110210379 Fin-jfet |
| 09/01/2011 | US20110210378 High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor |
| 09/01/2011 | US20110210377 Nitride semiconductor device |
| 09/01/2011 | US20110210376 Insulated gate field effect transistor having passivated schottky barriers to the channel |
| 09/01/2011 | US20110210374 Tri-Gate Field-Effect Transistors Formed by Aspect Ratio Trapping |
| 09/01/2011 | US20110210373 Semiconductor Structure with Coincident Lattice Interlayer |
| 09/01/2011 | US20110210372 High-voltage vertical power component |
| 09/01/2011 | US20110210342 Silicon carbide substrate and method of manufacturing silicon carbide substrate |
| 09/01/2011 | US20110210341 P-TYPE SiC SEMICONDUCTOR |
| 09/01/2011 | US20110210340 High temperature gate drivers for wide bandgap semiconductor power jfets and integrated circuits including the same |
| 09/01/2011 | US20110210339 Semiconductor device |
| 09/01/2011 | US20110210336 Semiconductor Device and Fabrication Method Thereof |
| 09/01/2011 | US20110210335 Display Device and Method for Manufacturing the Same |
| 09/01/2011 | US20110210333 Semiconductor Device |
| 09/01/2011 | US20110210328 Semiconductor device and manufacturing method thereof |
| 09/01/2011 | US20110210326 Semiconductor device |
| 09/01/2011 | US20110210325 Semiconductor device and manufacturing method thereof |
| 09/01/2011 | US20110210314 Graphene electronic device and method of fabricating the same |
| 09/01/2011 | US20110210309 Tubular nanostructures, processes of preparing same and devices made therefrom |
| 09/01/2011 | US20110210308 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby |
| 09/01/2011 | US20110209749 Pattern transfer method and apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, and flexible printed circuit board applying thereof |
| 09/01/2011 | DE102011000911A1 Nitridhalbleiterbauelement The nitride semiconductor |
| 09/01/2011 | DE102010002451A1 Kontaktelemente von Halbleiterbauelementen, die einen kontinuierlichen Übergang zu Metallleitungen einer Metallisierungsschicht besitzen Contact elements of semiconductor devices, which have a continuous transition to metal lines of a metallization layer |
| 09/01/2011 | DE102010002450A1 Transistoren mit Metallgateelektrodenstrukturen mit großem ε und angepassten Kanalhalbleitermaterialien Transistors with metal gate electrode structures with large ε and adjusted channel semiconductor materials |
| 09/01/2011 | DE102010002411A1 Kontaktbalken mit reduzierter Randzonenkapazität in einem Halbleiterbauelement Contact bar with reduced peripheral zone capacity in a semiconductor device |
| 09/01/2011 | DE102010002410A1 Verformungsgedächnistechnologie in verformten SOI-Substraten von Halbleiterbauelementen Verformungsgedächnistechnologie deformed in SOI substrates of semiconductor devices |
| 08/31/2011 | EP2362459A1 Modified graphene structure and method of manufacture thereof |
| 08/31/2011 | EP2362424A1 ZnO-based thin film transistor and method of manufacturing the same |
| 08/31/2011 | EP2362423A2 Vertical power semiconductor device and method of making the same |
| 08/31/2011 | EP2362422A2 Vertical power semiconductor device and method of making the same |
| 08/31/2011 | EP2362414A1 Method for manufacturing a semiconductor device |
| 08/31/2011 | EP2362413A1 Method for manufacturing a semiconductor device |
| 08/31/2011 | EP2361915A1 Novel heterocyclic compound and use thereof |
| 08/31/2011 | EP1611615B1 Method for the production of a bipolar semiconductor element, especially a bipolar transistor, and corresponding bipolar semiconductor component |
| 08/31/2011 | EP1522092B1 Semiconductor element with stress-carrying semiconductor layer and corresponding production method |
| 08/31/2011 | EP1483793B1 Schottky power diode comprising a sicoi substrate and the method of producing one such diode |
| 08/31/2011 | EP1427021B1 Semiconductor device |
| 08/31/2011 | EP1209752B1 Semiconductor device |
| 08/31/2011 | CN201956358U Axial rectifying diode |
| 08/31/2011 | CN201956357U 一种瞬态电压抑制二极管 One kind of transient voltage suppression diodes |
| 08/31/2011 | CN201956356U 方形晶闸管芯片 Square thyristor chips |
| 08/31/2011 | CN201956355U 高压半导体终端器件 Terminal voltage semiconductor device |
| 08/31/2011 | CN201956353U Gate electrode driving circuit of display panel |
| 08/31/2011 | CN201956345U GPP (glass passivation pellet) high-voltage diode |