| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 08/04/2011 | US20110186934 Low mismatch semiconductor device and method for fabricating same |
| 08/04/2011 | US20110186933 Schottky diode with silicide anode and anode-encircling p-type doped region |
| 08/04/2011 | US20110186928 Semiconductor device |
| 08/04/2011 | US20110186927 Power semiconductor device |
| 08/04/2011 | US20110186926 Semiconductor device having a lightly doped semiconductor gate and method for fabricating same |
| 08/04/2011 | US20110186925 Semiconductor device |
| 08/04/2011 | US20110186924 Semiconductor device and method of fabricating the same |
| 08/04/2011 | US20110186923 Semiconductor memory device having vertical channel transistor and method for fabricating the same |
| 08/04/2011 | US20110186922 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 08/04/2011 | US20110186921 Nonvolatile semiconductor memory device having element isolating region of trench type |
| 08/04/2011 | US20110186920 Semiconductor device with gate stack structure |
| 08/04/2011 | US20110186918 Shallow trench isolation structure having air gap, cmos image sensor using the same and method of manufacturing cmos image sensor |
| 08/04/2011 | US20110186915 Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition |
| 08/04/2011 | US20110186914 Field effect transistor (fet) and method of forming the fet without damaging the wafer surface |
| 08/04/2011 | US20110186912 Transistor gate electrode having conductor material layer |
| 08/04/2011 | US20110186911 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate |
| 08/04/2011 | US20110186910 Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| 08/04/2011 | US20110186909 Esd protection circuit for rfid tag |
| 08/04/2011 | US20110186908 Semiconductor device and method of manufacturing semiconductor device |
| 08/04/2011 | US20110186907 Semiconductor device and method of manufacturing semiconductor device |
| 08/04/2011 | US20110186906 Methods and apparatus for antimonide-based backward diode millimeter-wave detectors |
| 08/04/2011 | US20110186862 Silicon carbide semiconductor device and method for manufacturing the same |
| 08/04/2011 | US20110186861 Semiconductor device and method of manufacturing the same |
| 08/04/2011 | US20110186859 High speed high power nitride semiconductor device |
| 08/04/2011 | US20110186858 Gallium Nitride Power Devices Using Island Topography |
| 08/04/2011 | US20110186855 Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved Reliability |
| 08/04/2011 | US20110186854 Single-shot semiconductor processing system and method having various irradiation patterns |
| 08/04/2011 | US20110186853 Thin film transistor, method of manufacturing the same, and display unit |
| 08/04/2011 | US20110186852 Display device and driving method thereof |
| 08/04/2011 | US20110186851 Multilayer semiconductor devices with channel patterns having a graded grain structure |
| 08/04/2011 | US20110186849 Tft substrate for display device and manufacturing method of the same |
| 08/04/2011 | US20110186848 Semiconductor device and display device |
| 08/04/2011 | US20110186845 Crystallization method of amorphous semiconductor film, thin film transistor, and manufacturing method of thin film transistor |
| 08/04/2011 | US20110186844 Display substrate and method of manufacturing the same |
| 08/04/2011 | US20110186843 Manufacturing method of thin film and metal line for display using the same, thin film transistor array panel, and method for manufacturing the same |
| 08/04/2011 | US20110186842 Thin film transistor and method of manufacturing the same |
| 08/04/2011 | US20110186840 Diamond soi with thin silicon nitride layer |
| 08/04/2011 | US20110186837 Semiconductor memory device |
| 08/04/2011 | US20110186818 Doped graphene electronic materials |
| 08/04/2011 | US20110186817 Doped graphene electronic materials |
| 08/04/2011 | US20110186816 Semiconductor device wafer, semiconductor device, design system, manufacturing method and design method |
| 08/04/2011 | US20110186815 Nitride semiconductor device |
| 08/04/2011 | US20110186808 Methods of forming catalytic nanopads |
| 08/04/2011 | US20110186807 Doped graphene electronic materials |
| 08/04/2011 | US20110186806 Doped graphene electronic materials |
| 08/04/2011 | US20110186805 Doped graphene electronic materials |
| 08/04/2011 | US20110186804 Nanoscale chemical templating with oxygen reactive materials |
| 08/04/2011 | US20110186799 Non-volatile memory cell containing nanodots and method of making thereof |
| 08/04/2011 | US20110186797 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
| 08/04/2011 | DE102010001568A1 Elektronisches Bauteil für hohe Temperaturen Electronic component for high temperatures |
| 08/04/2011 | DE102010001406A1 Halbleiterbauelement, das durch ein Austausch-Gate-Verfahren auf der Grundlage eines früh aufgebrachten Austrittsarbeitsmetalls hergestellt ist A semiconductor device which is made by a replacement gate process on the basis of early work function metal deposited |
| 08/04/2011 | DE102010001404A1 Einstellung von Transistoreigenschaften auf der Grundlage einer späten Wannenimplantation Setting of transistor characteristics on the basis of a late well implantation |
| 08/04/2011 | DE102010001398A1 SOI-Halbleiterbauelement mit Substratdioden, die eine topographietolerante Kontaktstruktur besitzen SOI semiconductor device with a substrate diodes, which have a topography tolerant contact structure |
| 08/04/2011 | DE102009001522A1 Halbleiteranordnung mit Kondensator A semiconductor device with capacitor |
| 08/04/2011 | CA2753709A1 Method of manufacturing silicon carbide substrate |
| 08/03/2011 | EP2352169A1 Semiconductor device, method for manufacturing same, and display device |
| 08/03/2011 | EP2352037A1 Acceleration sensor |
| 08/03/2011 | EP2351089A2 Methods of forming diodes |
| 08/03/2011 | EP2351088A1 Semiconductor device and method for manufacturing the same |
| 08/03/2011 | EP2351087A1 Nanowires on substrate surfaces, method for producing same and use thereof |
| 08/03/2011 | EP2351081A2 Oc dram cell with increased sense margin |
| 08/03/2011 | EP2351075A1 Non-volatile semiconductor storage device |
| 08/03/2011 | EP1998376B1 Compound semiconductor device and process for producing the same |
| 08/03/2011 | EP1964177B1 Semiconductor devices and manufacturing method thereof |
| 08/03/2011 | EP1454364B1 Diode circuit and method for making same |
| 08/03/2011 | CN201918392U 4H-SiC PN穿通型二极管器件 4H-SiC PN-punch-through diode device |
| 08/03/2011 | CN201918391U 一种射频横向扩散n型mos管 A radio frequency lateral diffusion of n-type mos tube |
| 08/03/2011 | CN201918390U 一种提高电流密度的p型绝缘体上硅横向器件 Method for improving the current density of the p-type silicon on insulator lateral devices |
| 08/03/2011 | CN201918388U 一种基于氮化镓材料的单异质结声电荷输运延迟线 Single heterojunction acoustic charge transport delay line based on gallium nitride material |
| 08/03/2011 | CN201918387U 一种绝缘体上硅可集成大电流p型组合半导体器件 An insulator that can be integrated on a silicon p-type combination of high current semiconductor devices |
| 08/03/2011 | CN201918386U 抗辐照eeprom存储阵列隔离结构 Anti-radiation eeprom storage arrays isolation structure |
| 08/03/2011 | CN201918382U 一种光伏接线盒的二极管固定装置 A photovoltaic diode junction box fixing device |
| 08/03/2011 | CN1979894B Method for making memory unit, memory unit and operation method |
| 08/03/2011 | CN1884038B Semiconductor composite device and method of manufacturing the same |
| 08/03/2011 | CN102144004A Modified particles and dispersions comprising said particles |
| 08/03/2011 | CN102142488A Semiconductor device and method for manufacturing the same |
| 08/03/2011 | CN102142465A Front electrode structure of schottky diode and process manufacturing method of front electrode structure |
| 08/03/2011 | CN102142464A Surface mount diode and method of fabricating the same |
| 08/03/2011 | CN102142463A Polycrystalline silicon layer of thin film transistor and display thereof |
| 08/03/2011 | CN102142462A Power MOS transistor of asymmetric structure and array thereof |
| 08/03/2011 | CN102142461A Grid controlled Schottky junction tunneling field effect transistor and forming method thereof |
| 08/03/2011 | CN102142460A SOI (Silicon On Insulator) type P-LDMOS (Lateral Diffused Metal-Oxide Semiconductor) |
| 08/03/2011 | CN102142459A Coolmos structure |
| 08/03/2011 | CN102142458A MOS (Metal Oxide Semiconductor) field effect transistor |
| 08/03/2011 | CN102142457A Heterojunction bipolar transistor and manufacturing method thereof |
| 08/03/2011 | CN102142456A Bipolar junction transistor with high gain constant beta and manufacturing method thereof |
| 08/03/2011 | CN102142455A Device capable of mutually converting between BJT (Bipolar Junction Transistor) and MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) |
| 08/03/2011 | CN102142454A Semiconductor device and manufacturing method thereof |
| 08/03/2011 | CN102142453A Semiconductor structure and manufacturing method thereof |
| 08/03/2011 | CN102142444A Non-volatile information storage unit |
| 08/03/2011 | CN102142441A Flexible CMOS library architecture for leakage power and variability reduction |
| 08/03/2011 | CN102142440A Thyristor device |
| 08/03/2011 | CN102142439A Layout structure of driving chip |
| 08/03/2011 | CN102142434A 双向静电放电保护电路及相关的射频识别标签 Bidirectional ESD protection circuit and a radio frequency identification tag associated with |
| 08/03/2011 | CN102142425A 半导体器件 Semiconductor devices |
| 08/03/2011 | CN102142400A Nonvolatile memory device and method of manufacturing the same |
| 08/03/2011 | CN102142392A Semiconductor device and manufacture method thereof |
| 08/03/2011 | CN102142374A Process method for reducing drain-source ON resistance RDS (ON) of metal-oxide-semiconductor field effect transistor (MOSFET) power device |
| 08/03/2011 | CN102142370A Preparation method of diode chip on P+ substrate and structure of diode chip |
| 08/03/2011 | CN102142361A III-nitride compound semiconductor element and manufacturing method thereof |