| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/21/2011 | US20110175161 Advanced Forming Method and Structure of Local Mechanical Strained Transistor |
| 07/21/2011 | US20110175160 Short-channel schottky-barrier mosfet device and method of manufacture |
| 07/21/2011 | US20110175159 Non-volatile semiconductor storage device |
| 07/21/2011 | US20110175158 Dual charge storage node memory device and methods for fabricating such device |
| 07/21/2011 | US20110175157 Nonvolatile semiconductor memory device and method for manufacturing same |
| 07/21/2011 | US20110175156 Semiconductor memory device |
| 07/21/2011 | US20110175155 Nonvolatile semiconductor memory device |
| 07/21/2011 | US20110175154 Nonvolatile floating gate analog memory cell |
| 07/21/2011 | US20110175153 Semiconductor Device Having Transistor with Vertical Gate Electrode and Method of Fabricating the Same |
| 07/21/2011 | US20110175149 Semiconductor Device and Method of Fabricating the Same |
| 07/21/2011 | US20110175148 Methods of Forming Conductive Features and Structures Thereof |
| 07/21/2011 | US20110175147 Field-effect transistor device having a metal gate stack with an oxygen barrier layer |
| 07/21/2011 | US20110175145 Infrared Sensor |
| 07/21/2011 | US20110175142 Nitride semiconductor device |
| 07/21/2011 | US20110175141 Semiconductor devices including mos transistors having an optimized channel region and methods of fabricating the same |
| 07/21/2011 | US20110175140 Methods for forming nmos epi layers |
| 07/21/2011 | US20110175139 Semiconductor device and method for manufacturing same |
| 07/21/2011 | US20110175111 Silicon carbide semiconductor device |
| 07/21/2011 | US20110175110 Mosfet and method for manufacturing mosfet |
| 07/21/2011 | US20110175109 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same |
| 07/21/2011 | US20110175107 Silicon carbide substrate |
| 07/21/2011 | US20110175106 Semiconductor rectifier |
| 07/21/2011 | US20110175104 Semiconductor device |
| 07/21/2011 | US20110175103 Semiconductor device and method for manufacturing semiconductor device |
| 07/21/2011 | US20110175100 Infrared sensor |
| 07/21/2011 | US20110175099 Lithographic method of making uniform crystalline si films |
| 07/21/2011 | US20110175092 Organic semiconductor element, method of manufacturing organic semiconductor element, electronic device, electronic equipment and insulating layer forming composition |
| 07/21/2011 | US20110175091 Display device and manufacturing method thereof |
| 07/21/2011 | US20110175090 Semiconductor device, manufacturing method thereof, and electronic device |
| 07/21/2011 | US20110175089 Dielectric Materials and Methods of Preparation and Use Thereof |
| 07/21/2011 | US20110175088 Thin-Film Transistor Substrate and Method of Fabricating the Same |
| 07/21/2011 | US20110175085 Pin structures including intrinsic gallium arsenide, devices incorporating the same, and related methods |
| 07/21/2011 | US20110175084 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| 07/21/2011 | US20110175082 Display substrate |
| 07/21/2011 | US20110175081 Thin film transistor and display |
| 07/21/2011 | US20110175080 Transistors, methods of manufacturing a transistor, and electronic devices including a transistor |
| 07/21/2011 | US20110175078 Hydrogen penetration barrier |
| 07/21/2011 | US20110175063 Semiconductor nanowires having mobility-optimized orientations |
| 07/21/2011 | US20110175060 Graphene grown substrate and electronic/photonic integrated circuits using same |
| 07/21/2011 | US20110175059 Ii-vi core-shell semiconductor nanowires |
| 07/21/2011 | US20110174619 Nonoscopic wired-based devices and arrays |
| 07/21/2011 | US20110174377 Manufacturing method for flexible device, flexible device, solar cell, and light emitting device |
| 07/21/2011 | US20110174058 Integration manufacturing process for mems device |
| 07/21/2011 | DE102010000895A1 Verfahren zum Herstellen und Verschließen eines Grabens eines Halbleiterbauelements A method of manufacturing and closing of a trench of a semiconductor device |
| 07/21/2011 | DE102010000892A1 Verfahren zum Bereitstellen und Verbinden von zwei Kontaktbereichen eines Halbleiterbauelements bzw. einem Substrat, sowie ein Substrat mit zwei solchen verbundenen Kontaktbereichen A method for providing and connecting two contact portions of a semiconductor device or a substrate and a substrate associated with two such contact regions |
| 07/21/2011 | DE102009010196B4 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation |
| 07/21/2011 | DE102009010174B4 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device |
| 07/21/2011 | DE102007030053B4 Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten Reduce the pn junction capacitance of a transistor by lowering of drain and source regions |
| 07/21/2011 | DE102004012884B4 Leistungs-Halbleiterbauelement in Planartechnik Power semiconductor device in planar |
| 07/20/2011 | EP2346170A1 Electric circuit switching device |
| 07/20/2011 | EP2346083A1 Mems sensor |
| 07/20/2011 | EP2346082A1 Transistors, Methods of Manufacturing a Transistor, and Electronic Devices Including a Transistor |
| 07/20/2011 | EP2346081A1 Trench-gate vertical MOSFET manufacturing method |
| 07/20/2011 | EP2346078A1 Memory cell in which the channel passes through a buried dielectric layer |
| 07/20/2011 | EP2346077A1 DRAM memory cell having a vertical bipolar injector and method of operating the same |
| 07/20/2011 | EP2346076A2 Semiconductor device including nonvolatile memory |
| 07/20/2011 | EP2346071A1 Compound semiconductor device and method for manufacturing the same |
| 07/20/2011 | EP2346070A1 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor |
| 07/20/2011 | EP2346068A1 Iii nitride semiconductor electronic device, method for manufacturing iii nitride semiconductor electronic device, and iii nitride semiconductor epitaxial wafer |
| 07/20/2011 | EP2346067A2 Capacitance under a fringe capacitor of a radio frequency integrated circuit |
| 07/20/2011 | EP2345925A2 Transflective liquid crystal display and method for manufacturing the same |
| 07/20/2011 | EP2345924A2 Transflective liquid crystal display and method for manufacturing the same |
| 07/20/2011 | EP2345082A2 Vertical junction field effect transistors having sloped sidewalls and methods of making |
| 07/20/2011 | EP2345081A2 Reverse-conducting semiconductor device |
| 07/20/2011 | EP2345071A1 Graphene memory cell and fabrication methods thereof |
| 07/20/2011 | EP2345065A2 Semiconductor devices having faceted silicide contacts, and related fabrication methods |
| 07/20/2011 | EP2345064A2 Guard ring structures and method of fabricating thereof |
| 07/20/2011 | EP2345063A2 Semiconductor structure with an electric field stop layer for improved edge termination capability |
| 07/20/2011 | EP2253013B1 Method for fabricating a finfet with separate gates |
| 07/20/2011 | EP2240965B1 Field effect transistor |
| 07/20/2011 | EP1593154B1 Method of manufacturing a semiconductor device with mos transistors comprising gate electrodes formed in a packet of metal layers deposited upon one another |
| 07/20/2011 | EP1230340B1 Methods for the electronic, homogeneous assembly and fabrication of devices |
| 07/20/2011 | CN201904344U High-robustness back biased diode applied to high-voltage electrostatic protection |
| 07/20/2011 | CN201904343U Thin film transistor structure of organic light-emitting device pixel circuit |
| 07/20/2011 | CN201904342U Medium-pressure heavy-current N-path enhanced power MOS tube |
| 07/20/2011 | CN201904341U P type hyperconjugation lateral double diffusion metal oxide semiconductor tube |
| 07/20/2011 | CN201904340U N type lateral insulating gate bipolar transistor of silicon on insulator |
| 07/20/2011 | CN201904316U Commutation diode support |
| 07/20/2011 | CN1825548B Method of forming a conductive pattern, a thin film transistor and method of manufacturing the same |
| 07/20/2011 | CN102132436A Compound for organic thin film transistor and organic thin film transistor using the same |
| 07/20/2011 | CN102132414A Field-effect transistor, method for manufacturing same, and sputtering target |
| 07/20/2011 | CN102132413A Field effect transistor, display element, image display device, and system |
| 07/20/2011 | CN102132412A Surface-textured encapsulations for use with light emitting diodes |
| 07/20/2011 | CN102132399A 半导体装置 Semiconductor device |
| 07/20/2011 | CN102132389A Method for forming aluminum-doped metal carbonitride gate electrodes |
| 07/20/2011 | CN102132388A Bipolar semiconductor device and method for manufacturing same |
| 07/20/2011 | CN102131953A Sputtering target for oxide semiconductor, comprising ingao3(zno) crystal phase and process for producing the sputtering target |
| 07/20/2011 | CN102131843A Phenoxazine polymeric compound and light-emitting element using same |
| 07/20/2011 | CN102131842A Polymer compound and polymer light-emitting element utilizing same |
| 07/20/2011 | CN102130184A High-robustness back biased diode applied to high-voltage static protection |
| 07/20/2011 | CN102130183A Low voltage bidirectional protection diode |
| 07/20/2011 | CN102130182A Current regulation diode chip and manufacturing method thereof |
| 07/20/2011 | CN102130181A Lateral super junction device with high substrate-drain breakdwon and built-in avalanche clamp diode |
| 07/20/2011 | CN102130180A Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same |
| 07/20/2011 | CN102130179A Silicon-oxide-nitride-oxide-silicon (SONOS) device |
| 07/20/2011 | CN102130178A Thin film transistor structure |
| 07/20/2011 | CN102130177A Transistors, methods of manufacturing a transistor, and electronic devices including a transistor |
| 07/20/2011 | CN102130176A SOI (silicon-on-insulator) super-junction LDMOS (Laterally Diffused Metal Oxide Semiconductor) device with buffer layer |
| 07/20/2011 | CN102130175A 垂直式晶体管结构 Vertical transistor structure |
| 07/20/2011 | CN102130174A MOS (Metal Oxide Semiconductor) device structure and manufacturing method thereof |