| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/28/2011 | US20110180801 Light emitting apparatus and method for manufacturing the same |
| 07/28/2011 | US20110180800 Liquid crystal display panel and fabricating method thereof |
| 07/28/2011 | US20110180799 Electronic device comprising static induction transistor and thin film transistor, method of manufacturing an electronic device and display panel |
| 07/28/2011 | US20110180797 Semiconductor Apparatus and Fabrication Method of the Same |
| 07/28/2011 | US20110180796 Semiconductor device |
| 07/28/2011 | US20110180795 electro-optic device and a method for manufacturing the same |
| 07/28/2011 | US20110180794 Display device |
| 07/28/2011 | US20110180793 Thin film transistor, method of manufacturing thin film transistor, display unit, and electronic device |
| 07/28/2011 | US20110180789 Hybrid Dielectric Material for Thin Film Transistors |
| 07/28/2011 | US20110180783 Boundary-modulated nanoparticle junctions and a method for manufacture thereof |
| 07/28/2011 | US20110180777 Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure |
| 07/28/2011 | US20110180775 Programmable metallization cell with ion buffer layer |
| 07/28/2011 | US20110180140 Supramolecular structures comprising at least partially conjugated polymers attached to carbon nanotubes or graphenes |
| 07/28/2011 | US20110180132 Texturing and damage etch of silicon single crystal (100) substrates |
| 07/28/2011 | DE19932541B4 Verfahren zur Herstellung einer Membran A method for producing a membrane |
| 07/28/2011 | DE112009002118T5 Verfahren zum Formen von aluminiumdotierten Metall-Carbonitrid-Gate-Elektroden A process for forming aluminum-doped metal carbonitride gate electrodes |
| 07/28/2011 | DE10394372B4 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device |
| 07/28/2011 | DE10350162B4 Halbleiterbauteil Semiconductor device |
| 07/28/2011 | DE10330047B4 Halbleitersensor für eine dynamische Größe Semiconductor sensor dynamic quantity |
| 07/28/2011 | DE10323242B4 Verfahren zur Herstellung einer Halbleitervorrichtung mit epitaktisch gefülltem Graben und Halbleitervorrichtung mit epitaktisch gefülltem Graben A method of manufacturing a semiconductor device having epitaxially filled trench and the semiconductor device with epitaxially filled trench |
| 07/28/2011 | DE102008063432B4 Verfahren zum Einstellen der Verformung, die in einem Transistorkanal eines FET hervorgerufen wird, durch für die Schwellwerteinstellung vorgesehenes Halbleitermaterial A method of adjusting the deformation, which is caused in a transistor channel of a FET, by provided for the threshold value setting semiconductor material |
| 07/28/2011 | DE102008011799B4 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device |
| 07/28/2011 | DE102006047489B4 Halbleiterbauelement Semiconductor device |
| 07/28/2011 | DE102006012447B4 Verfahren zur Herstellung einer Transistorstruktur A process for producing a transistor structure |
| 07/28/2011 | DE102005016439B4 Halbleiterbauelementpackung und Herstellungsverfahren Semiconductor device package and manufacturing method |
| 07/28/2011 | DE102004059620B4 Halbleitervorrichtung Semiconductor device |
| 07/28/2011 | DE102004030920B4 Verfahren zum Bilden einer Grabenisolationsschicht in einem Halbleiterbauelement A method of forming a grave insulating layer in a semiconductor device |
| 07/28/2011 | DE10194689B4 Nichtflüchtige Halbleiterspeicher mit zwei Speichereinheiten und Verfahren zu deren Herstellung A non-volatile semiconductor memory comprising two memory units and methods for their preparation |
| 07/28/2011 | CA2777675A1 Silicon carbide semiconductor device and method of manufacturing thereof |
| 07/27/2011 | EP2348536A2 Method and apparatus for use in approving linearity of MOSFETs using an accumulated charge sink |
| 07/27/2011 | EP2348535A2 Method and Apparatus for Use in Improving Linearity of MOSFETS Using an Accumulated Charge Sink |
| 07/27/2011 | EP2348534A2 Apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
| 07/27/2011 | EP2348533A2 Apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
| 07/27/2011 | EP2348532A2 Apparatus for use in improving linearity of Mosfets using an accumulated charge sink |
| 07/27/2011 | EP2348531A2 Thin film transistor and method of manufacturing the same |
| 07/27/2011 | EP2348530A1 Silicon carbide semiconductor device |
| 07/27/2011 | EP1952444B1 Metal-base nanowire transistor |
| 07/27/2011 | EP1745515B1 Tuneable semiconductor device |
| 07/27/2011 | EP1599908B1 Method of manufacturing a non-volatile memory cell with a lateral select gate |
| 07/27/2011 | EP1436846B1 Mos devices and corresponding manufacturing methods and circuits |
| 07/27/2011 | EP1323185B1 Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o |
| 07/27/2011 | EP1275139B1 Uv pretreatment process of ultra-thin oxynitride for formation of silicon nitride films |
| 07/27/2011 | CN201910425U LDMOS (laterally diffused metal oxide semiconductor) device suitable for high and low-voltage monolithic integration |
| 07/27/2011 | CN201910424U Inverter thyristor chip |
| 07/27/2011 | CN201910423U N-type silicon-on-insulator transverse device capable of improving current density |
| 07/27/2011 | CN1979877B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 07/27/2011 | CN1971939B Repairing pixel defect of display device |
| 07/27/2011 | CN1692450B Non-volatile memory and write method of the same |
| 07/27/2011 | CN1605921B Liquid crystal display and thin film transistor substrate therefor |
| 07/27/2011 | CN102138218A Resin composition, gate insulating layer and organic thin film transistor |
| 07/27/2011 | CN102138217A Power MOSFET with a gate structure of different material |
| 07/27/2011 | CN102138211A Body contact for SRAM cell comprising double-channel transistors |
| 07/27/2011 | CN102138206A Semiconductor device and manufacturing method thereof |
| 07/27/2011 | CN102137959A Crystal manufacturing apparatus, semiconductor device manufactured using same, and method for manufacturing semiconductor device using same |
| 07/27/2011 | CN102137830A Compound for organic thin-film transistor and organic thin-film transistor using same |
| 07/27/2011 | CN102136501A Vertical-channel junction field-effect transistors having buried gates and methods of making the same |
| 07/27/2011 | CN102136500A Method of manufacturing semiconductor device |
| 07/27/2011 | CN102136499A Thin film transistor and method of manufacturing the same |
| 07/27/2011 | CN102136498A 薄膜晶体管 The thin film transistor |
| 07/27/2011 | CN102136497A Power MOSFET device and method of making the same |
| 07/27/2011 | CN102136496A Semiconductor element |
| 07/27/2011 | CN102136495A Structure of semiconductor high-voltage device and manufacturing method thereof |
| 07/27/2011 | CN102136494A High-voltage isolating LDNMOS (Lateral Diffusion N-channel Metal Oxide Semiconductor) and manufacture method thereof |
| 07/27/2011 | CN102136493A High-voltage insulation type LDNMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof |
| 07/27/2011 | CN102136492A Memory based on self-assembled QD (Quantum Dots) and preparation method thereof |
| 07/27/2011 | CN102136491A Static discharge protection device for gate insulation dual junction transistor |
| 07/27/2011 | CN102136490A Semiconductor Device and Power Conversion Apparatus using the same |
| 07/27/2011 | CN102136489A Semiconductor structure and manufacture method thereof |
| 07/27/2011 | CN102136488A Organic light emitting diode display and method for manufacturing the same |
| 07/27/2011 | CN102136481A Manufacture method of EEPROM (Electronically Erasable Programmable Read-Only Memory) device |
| 07/27/2011 | CN102136465A Open-circuit embedding-removing test structure for trimmer-capacitance MOS (metal oxide semiconductor) varactor and variable capacitance diode |
| 07/27/2011 | CN102136428A Preparation method of germanium-based Schottky N-type field effect transistor |
| 07/27/2011 | CN102136425A P-channel depletion MOS (metal oxide semiconductor) transistor and preparation method thereof |
| 07/27/2011 | CN102136417A Method for manufacturing semiconductor device |
| 07/27/2011 | CN102136414A Gallium nitride semiconductor element and light-emitting diode |
| 07/27/2011 | CN102135674A Array substrate for liquid crystal display device and method of fabricating the same |
| 07/27/2011 | CN101882623B Nonvolatile semiconductor photorefractive memory structure |
| 07/27/2011 | CN101807604B Point contact Laterally Diffused Metal Oxide Semiconductor (LDMOS) structure transistor unit |
| 07/27/2011 | CN101694840B Power device integrated circuit |
| 07/27/2011 | CN101645464B TbMnO p-n heterojunction having two-way rectifying characteristic and preparation method thereof |
| 07/27/2011 | CN101598894B Photomask, thin film transistor element and manufacturing method of thin film transistor element |
| 07/27/2011 | CN101587906B Display device and electronic apparatus |
| 07/27/2011 | CN101577256B Semiconductor device and method of manufacturing the same |
| 07/27/2011 | CN101552290B Insulated gate field effect transistor and method of manufacturing same, and image pickup device and method of manufacturing same |
| 07/27/2011 | CN101552194B Semiconductor device and method of fabricating the same |
| 07/27/2011 | CN101471288B Semiconductor device using CMP and manufacturing method thereof |
| 07/27/2011 | CN101431099B Semiconductor element |
| 07/27/2011 | CN101427380B Charge storage structure formation in transistor with vertical channel region |
| 07/27/2011 | CN101419988B P-NiO/n-MgxZn1-xO p-n junction diode with gradient forbidden band width and manufacturing method thereof |
| 07/27/2011 | CN101401196B Vertical EEPROM device |
| 07/27/2011 | CN101375403B Semiconductor device and manufacturing method thereof |
| 07/27/2011 | CN101256959B Fin type FET and manufacturing method thereof |
| 07/27/2011 | CN101140944B Spin memory and spin fet |
| 07/27/2011 | CN101093795B Method for manufacturing the semiconductor device |
| 07/27/2011 | CN101071825B Insulated gate semiconductor device |
| 07/27/2011 | CN101068030B Semiconductor device and method of manufacturing the same |
| 07/27/2011 | CA2740244A1 Silicon carbide semiconductor device and method of manufacturing thereof |
| 07/26/2011 | US7986721 Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer |
| 07/26/2011 | US7986296 Liquid crystal display and its driving method |
| 07/26/2011 | US7986289 Liquid crystal display device |