H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2011
08/31/2011	CN1989169B Polymer compound, polymer film and polymer film element using the same
08/31/2011	CN1710718B Semiconductor device and method of manufacture thereof
08/31/2011	CN102171835A Electron blocking layers for electronic devices
08/31/2011	CN102171834A Method of simulation and simulation device
08/31/2011	CN102171833A Thin-film transistor and display device
08/31/2011	CN102171832A Insulated gate field effect transistor
08/31/2011	CN102171831A Group III-V devices with Delta-doped layer under channel region
08/31/2011	CN102171830A Normally-off semiconductor devices and methods of fabricating the same
08/31/2011	CN102171829A Multi-layer reconfigurable switches
08/31/2011	CN102171828A Insulated gate bipolar transistor
08/31/2011	CN102171827A 碳化硅半导体器件 Silicon carbide semiconductor device
08/31/2011	CN102171826A Discrete semiconductor device and method of forming sealed trench junction termination
08/31/2011	CN102171811A Semiconductor device
08/31/2011	CN102171800A Semiconductor device and method for manufacturing same
08/31/2011	CN102171793A Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
08/31/2011	CN102171791A Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
08/31/2011	CN102171790A Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
08/31/2011	CN102171789A Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
08/31/2011	CN102169907A Film transistor and producing method thereof
08/31/2011	CN102169906A Semiconductor device
08/31/2011	CN102169905A Film transistor substrate and display device thereof
08/31/2011	CN102169904A Display substrate
08/31/2011	CN102169903A LDMOS (Laterally Diffused Metal Oxide Semiconductor) component
08/31/2011	CN102169902A Super junction device with deep trench and implant
08/31/2011	CN102169901A Tunneling field effect transistor having heterogeneous grid work function and formation method thereof
08/31/2011	CN102169900A Tunnelling field effect transistor based on work function of heterogeneous gate and forming method of tunnelling field effect transistor
08/31/2011	CN102169899A Layer structure for an n type or p type channel transistor and plane reverse circuit
08/31/2011	CN102169898A Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same
08/31/2011	CN102169897A Semiconductor device and method of manufacturing the same
08/31/2011	CN102169896A Manufacturing method of groove-type power MOS (Metal Oxide Semiconductor) transistor
08/31/2011	CN102169895A Radio-frequency metal-oxide-semiconductor field effect transistor
08/31/2011	CN102169894A 化合物半导体装置 The compound semiconductor device
08/31/2011	CN102169893A Horizontal channel SOI LIGBT device unit with P buried layer
08/31/2011	CN102169892A Enhancement mode planar insulated gate bipolar transistor (IGBT)
08/31/2011	CN102169891A Semiconductor memory for modifying semiconductor doping characteristic based on multi-level impurity
08/31/2011	CN102169890A Isolation structure for high-voltage power integrated circuit
08/31/2011	CN102169889A Ultra-long semiconductor nano-wire structure and manufacturing method thereof
08/31/2011	CN102169888A Strain geoi structure and forming method thereof
08/31/2011	CN102169887A Electronic device including doped regions between channel and drain regions and a process of forming the same
08/31/2011	CN102169881A Power supply clamping structure method applied to high pressure process integrated circuit
08/31/2011	CN102169869A Reliability testing structure and method for detecting crystal orientation correlation of MOS (Metal Oxide Semiconductor) components
08/31/2011	CN102169854A Split-gate flash memory unit and manufacturing method thereof
08/31/2011	CN102169836A Corner layout for superjunction device
08/31/2011	CN102169835A Integrated circuit device and method for fabricating the integrated circuit device
08/31/2011	CN102169552A Radio frequency identification tag and manufacturing method thereof
08/31/2011	CN101882629B Component capable of realizing composite functions of self-rotary storage detection and photo-detector
08/31/2011	CN101866855B Method for preparing chip of high-voltage planar fast-recovery diode
08/31/2011	CN101740384B Method for preparing enhanced aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility
08/31/2011	CN101694846B SOI-cascaded dual-tube MOS transistor structure
08/31/2011	CN101673765B Semiconductor device and manufacturing method thereof
08/31/2011	CN101667597B Vertical double-diffused MOS transistor testing structure
08/31/2011	CN101641791B Superjunction power semiconductor device
08/31/2011	CN101635292B Contact pad for measuring electrical thickness of gate dielectric layer and measurement structure thereof
08/31/2011	CN101542715B 半导体装置 Semiconductor device
08/31/2011	CN101501857B Multi-level interconnections for an integrated circuit chip
08/31/2011	CN101471338B Semiconductor capacitance structure
08/31/2011	CN101454882B High density trench fet with integrated schottky diode and method of manufacture
08/31/2011	CN101416320B TFT substrate, reflective TFT substrate and method for manufacturing such substrates
08/31/2011	CN101414631B NAND structure memory and manufacture method thereof
08/31/2011	CN101351712B Semiconductor sensor and method of producing sensor body for semiconductor sensor
08/31/2011	CN101313413B Photoelectric converter
08/31/2011	CN101310368B Electronic device, printable dispersion and method for preparing electronic device containing dielectric
08/31/2011	CN101283448B Semiconductor storage device and method for manufacturing same
08/31/2011	CN101258588B Method of manufacturing a semiconductor power device
08/31/2011	CN101238560B Field effect transistor
08/31/2011	CN101183664B Semiconductor structure and process for fabrication of finfets
08/30/2011	US8010927 Structure for a stacked power clamp having a BigFET gate pull-up circuit
08/30/2011	US8009937 Charge-based memory cell for optical resonator tuning
08/30/2011	US8009477 Integrated circuit and method of forming an integrated circuit
08/30/2011	US8009241 LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
08/30/2011	US8008789 Substrate for a display panel, and a display panel having the same
08/30/2011	US8008786 Dynamic pad size to reduce solder fatigue
08/30/2011	US8008785 Microelectronic assembly with joined bond elements having lowered inductance
08/30/2011	US8008776 Chip structure and process for forming the same
08/30/2011	US8008775 Post passivation interconnection structures
08/30/2011	US8008751 Semiconductor device and manufacturing method thereof
08/30/2011	US8008749 Semiconductor device having vertical electrodes structure
08/30/2011	US8008748 Deep trench varactors
08/30/2011	US8008747 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
08/30/2011	US8008746 Semiconductor device
08/30/2011	US8008739 Microelectromechanical apparatus and method for producing the same
08/30/2011	US8008738 Integrated differential pressure sensor
08/30/2011	US8008737 Semiconductor device
08/30/2011	US8008736 Analog interferometric modulator device
08/30/2011	US8008735 Micromachine device with a spatial portion formed within
08/30/2011	US8008734 Power semiconductor device
08/30/2011	US8008731 IGFET device having a RF capability
08/30/2011	US8008728 Semiconductor device and manufacturing method of semiconductor device
08/30/2011	US8008725 Field transistors for electrostatic discharge protection and methods for fabricating the same
08/30/2011	US8008723 Semiconductor device including a plurality of diffusion layers and diffusion resistance layer
08/30/2011	US8008720 Transistor structure having a conductive layer formed contiguous in a single deposition
08/30/2011	US8008719 Transistor structure having dual shield layers
08/30/2011	US8008718 Semiconductor device and production method thereof
08/30/2011	US8008717 Semiconductor device
08/30/2011	US8008716 Inverted-trench grounded-source FET structure with trenched source body short electrode
08/30/2011	US8008715 Semiconductor device
08/30/2011	US8008714 Semiconductor device including a MOSFET and a Schottky junction
08/30/2011	US8008713 Vertical SOI trench SONOS cell
08/30/2011	US8008712 Metallization and its use in, in particular, an IGBT or a diode
08/30/2011	US8008711 Insulated gate transistor incorporating diode

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