| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/14/2011 | CN102185041A High-power LED (light-emitting diode) with Schottky diode for measuring temperature |
| 09/14/2011 | CN102184972A Schottky diode chip with double-layer silicon epitaxial wafer structure |
| 09/14/2011 | CN102184971A Groove type carborundum Schottky power device |
| 09/14/2011 | CN102184970A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 09/14/2011 | CN102184969A 液晶显示装置 The liquid crystal display device |
| 09/14/2011 | CN102184968A Thin film transistor with single-gate double-channel structure and manufacturing method thereof |
| 09/14/2011 | CN102184967A Film transistor |
| 09/14/2011 | CN102184966A Transistor array substrate |
| 09/14/2011 | CN102184965A Method of driving transistor and device including transistor driven by the method |
| 09/14/2011 | CN102184964A N-channel accumulative SiC IEMOSFET (Implantation and Epitaxial Metal-Oxide-Semiconductor Field Effect Transistor) device and manufacturing method thereof |
| 09/14/2011 | CN102184963A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device with transverse composite buffer layer structure |
| 09/14/2011 | CN102184962A Metal oxide semiconductor (MOS) device and manufacturing method thereof |
| 09/14/2011 | CN102184961A Asymmetrical gate metal oxide semiconductor (MOS) device and manufacturing method thereof |
| 09/14/2011 | CN102184960A Power metal oxide semiconductor field-effect tube and forming method thereof |
| 09/14/2011 | CN102184959A Power MOS (Metal-Oxide Semiconductor) tube and manufacturing method thereof |
| 09/14/2011 | CN102184958A Vertical double-diffusion MOS (Metal-Oxide Semiconductor) tube and manufacturing method thereof |
| 09/14/2011 | CN102184957A UMOS (U-groove-metal-oxide-silicon) transistor and forming method thereof |
| 09/14/2011 | CN102184956A Longitudinal conduction GaN enhancement type MISFET (Metal Integrated Semiconductor Field Effect Transistor) device and manufacturing method thereof |
| 09/14/2011 | CN102184955A Complementary tunneling field effect transistor and forming method thereof |
| 09/14/2011 | CN102184954A Ge channel device and forming method thereof |
| 09/14/2011 | CN102184953A Stress GeOI structure and forming method thereof |
| 09/14/2011 | CN102184952A Vertical capacitive depletion field effect transistors (VCDFETS) and methods for fabricating VCDFETS |
| 09/14/2011 | CN102184951A High-temperature-resistance high-power thyristor |
| 09/14/2011 | CN102184950A Insulated gate bipolar transistor with cavity blocking layer(s) |
| 09/14/2011 | CN102184949A Deep groove side oxygen controlled planar isolated gate bipolar transistor |
| 09/14/2011 | CN102184948A Improved planear insulated gate bipolar transistor |
| 09/14/2011 | CN102184947A High-voltage semiconductor structure and preparation method thereof |
| 09/14/2011 | CN102184946A Metal semiconductor compound film, DRAM (Dynamic Random Access Memory) storage unit and preparation method thereof |
| 09/14/2011 | CN102184945A Trench type MOSFET (metal-oxide-semiconductor field effect transistor) device |
| 09/14/2011 | CN102184944A Junction terminal structure of lateral power device |
| 09/14/2011 | CN102184943A Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof |
| 09/14/2011 | CN102184942A Device having graphene and hexagonal boron nitride and associated device |
| 09/14/2011 | CN102184941A Groove type power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device |
| 09/14/2011 | CN102184940A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
| 09/14/2011 | CN102184939A Semiconductor power device with high-K medium tank |
| 09/14/2011 | CN102184928A 显示元件及其制造方法 Element and manufacturing method thereof |
| 09/14/2011 | CN102184926A Memory cell in which the channel passes through a buried dielectric layer |
| 09/14/2011 | CN102184923A Silicon nanowire transistor device programmable array and preparation method thereof |
| 09/14/2011 | CN102184919A 半导体集成电路 The semiconductor integrated circuit |
| 09/14/2011 | CN102184895A Side wall of high-voltage complementary metal-oxide-semiconductor transistor (CMOS) device and manufacturing method thereof |
| 09/14/2011 | CN102184894A Semiconductor device and forming method thereof, vertical double diffused metal oxide semiconductor (VDMOS) transistor and forming method of VDMOS transistor |
| 09/14/2011 | CN102184891A Intelligent label, its fabrication method and management process of the goods with the same |
| 09/14/2011 | CN102184885A Groove isolating structure and manufacturing method thereof |
| 09/14/2011 | CN102184870A UMOS (U-groove-metal-oxide-silicon) transistor and forming method thereof |
| 09/14/2011 | CN102184869A Method for manufacturing metal oxide semiconductor (MOS) transistor isolation area and MOS transistor |
| 09/14/2011 | CN102184866A Thin-film transistor and manufacturing method thereof |
| 09/14/2011 | CN102184864A Thin film transistor and manufacturing method thereof |
| 09/14/2011 | CN102184863A RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof |
| 09/14/2011 | CN102184861A Trench filling method and trench structure of cold MOS (metal oxide semiconductor) |
| 09/14/2011 | CN102184860A Cold MOS (Metal Oxide Semiconductor) groove padding method and cold MOS groove structure |
| 09/14/2011 | CN102184859A Manufacturing method of cold metal oxide semiconductor (MOS) super-junction structure and cold MOS super-junction structure |
| 09/14/2011 | CN102184849A Method for manufacturing graphene-based field effect transistor |
| 09/14/2011 | CN102184848A Metal nanocrystalline storage capacitor and preparation method thereof |
| 09/14/2011 | CN102184847A Semiconductor structure and forming method thereof, PMOS (P-channel Metal Oxide Semiconductor) transistor and forming method thereof |
| 09/14/2011 | CN102184844A Voltage protecting ring of channel metal-oxide-semiconductor field effect transistor (MOSFET)-based diode and manufacturing method thereof |
| 09/14/2011 | CN102184843A Chip cutting protection ring of diode based on groove MOSFET (metal-oxide-semiconductor field effect transistor) and manufacturing method thereof |
| 09/14/2011 | CN102181819A Plasma nitridation processing method |
| 09/14/2011 | CN101924142B GaAs Schottky variable capacitance diode and manufacture method thereof |
| 09/14/2011 | CN101777583B Graphene field effect transistor |
| 09/14/2011 | CN101750826B 像素结构 Pixel structure |
| 09/14/2011 | CN101707214B Semiconductor device |
| 09/14/2011 | CN101699624B Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same |
| 09/14/2011 | CN101694850B Carrier-storing grooved gate IGBT with P-type floating layer |
| 09/14/2011 | CN101681955B Display device and method for manufacturing the same |
| 09/14/2011 | CN101681931B Circuit board and display device |
| 09/14/2011 | CN101663759B Electronic device with improved ohmic contact and manufacture method thereof |
| 09/14/2011 | CN101647108B Structure and method for forming asymmetrical overlap capacitance in field effect transistors |
| 09/14/2011 | CN101501818B Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
| 09/14/2011 | CN101432869B Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having the semiconductor device |
| 09/14/2011 | CN101268555B Silicon carbide semiconductor device |
| 09/14/2011 | CN101180516B Gyroscopes |
| 09/14/2011 | CN101107716B 有机薄膜晶体管 The organic thin film transistor |
| 09/13/2011 | US8019194 Digital audio and video recording and storage system and method |
| 09/13/2011 | US8018070 Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices |
| 09/13/2011 | US8018068 Semiconductor package including a top-surface metal layer for implementing circuit features |
| 09/13/2011 | US8018066 Semiconductor device and method of manufacturing the same |
| 09/13/2011 | US8018063 Solder joint reliability in microelectronic packaging |
| 09/13/2011 | US8018060 Post passivation interconnection process and structures |
| 09/13/2011 | US8018057 Semiconductor device with resin layers and wirings and method for manufacturing the same |
| 09/13/2011 | US8018047 Power semiconductor module including a multilayer substrate |
| 09/13/2011 | US8018029 Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer |
| 09/13/2011 | US8018028 Semiconductor device and method for manufacturing the same |
| 09/13/2011 | US8018027 Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
| 09/13/2011 | US8018026 Circuit board and semiconductor device |
| 09/13/2011 | US8018025 Nonvolatile memory cell comprising a reduced height vertical diode |
| 09/13/2011 | US8018024 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
| 09/13/2011 | US8018023 Trench sidewall protection by a carbon-rich layer in a semiconductor device |
| 09/13/2011 | US8018021 Schottky diode and method of fabricating the same |
| 09/13/2011 | US8018020 Schottky barrier diode and manufacturing method thereof |
| 09/13/2011 | US8018013 Pixel structure and method for manufacturing thereof |
| 09/13/2011 | US8018011 Low cost multi-state magnetic memory |
| 09/13/2011 | US8018010 Circular surface acoustic wave (SAW) devices, processes for making them, and methods of use |
| 09/13/2011 | US8018008 Semiconductor device including a plurality of chips and method of manufacturing semiconductor device |
| 09/13/2011 | US8018003 Leakage power reduction in CMOS circuits |
| 09/13/2011 | US8017997 Vertical metal-insulator-metal (MIM) capacitor using gate stack, gate spacer and contact via |
| 09/13/2011 | US8017996 Semiconductor device, and energy transmission device using the same |
| 09/13/2011 | US8017995 Deep trench semiconductor structure and method |
| 09/13/2011 | US8017994 Nonvolatile semiconductor memory |
| 09/13/2011 | US8017993 Nonvolatile semiconductor memory device and method for manufacturing same |
| 09/13/2011 | US8017992 Flash memory device and method of fabricating the same |