H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2011
08/11/2011	US20110194336 Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
08/11/2011	US20110194327 Semiconductor device and method of driving semiconductor device
08/11/2011	US20110194045 Electro-optic displays, and components for use therein
08/11/2011	US20110194036 Photodiode, photodiode-equipped display device, and fabrication method therefor
08/11/2011	US20110193202 Methods to achieve 22 nanometer and beyond with single exposure
08/11/2011	US20110193201 Method to fabricate and treat a structure of semiconductor-on-insulator type, enabling displacement of dislocations, and corresponding structure
08/11/2011	US20110193196 Indium Phosphide Substrate Manufacturing Method, Epitaxial Wafer Manufacturing Method, Indium Phosphide Substrate, and Epitaxial Wafer
08/11/2011	US20110193195 Virtual substrates for epitaxial growth and methods of making the same
08/11/2011	US20110193194 Thin film mim capacitors and manufacturing method therefor
08/11/2011	US20110193193 Structure and method for forming isolation and buried plate for trench capacitor
08/11/2011	US20110193191 Protective element and semiconductor device
08/11/2011	US20110193190 Semiconductor material manufacture
08/11/2011	US20110193189 Semiconductor substrate, method of fabricating the same, method of fabricating semiconductor device, and method of fabricating image sensor
08/11/2011	US20110193185 Magnetic memory device having a recording layer
08/11/2011	US20110193184 Micromechanical system and method for manufacturing a micromechanical system
08/11/2011	US20110193183 Nanowire sensor, nanowire sensor array and method of fabricating the same
08/11/2011	US20110193182 Field effect transistor and semiconductor device
08/11/2011	US20110193181 Semiconductor device having different metal gate structures
08/11/2011	US20110193180 Method and apparatus of forming a gate
08/11/2011	US20110193179 Lightly doped source/drain last method for dual-epi integration
08/11/2011	US20110193178 Bottom-Notched SiGe FinFET Formation Using Condensation
08/11/2011	US20110193177 Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same
08/11/2011	US20110193176 Semiconductor Devices with Sealed, Unlined Trenches and Methods of Forming Same
08/11/2011	US20110193166 Structure and method for reducing floating body effect of soi mosfets
08/11/2011	US20110193164 Semiconductor device and method for manufacturing the same
08/11/2011	US20110193163 Semiconductor Devices with Improved Self-Aligned Contact Areas
08/11/2011	US20110193162 Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain
08/11/2011	US20110193161 Method and apparatus of forming a gate
08/11/2011	US20110193158 Semiconductor Devices With Sealed, Unlined Trenches and Methods of Forming Same
08/11/2011	US20110193157 Cross-hair cell based floating body device
08/11/2011	US20110193156 Electrically erasable programmable memory and its manufacturing method
08/11/2011	US20110193155 Semiconductor memory device including a stacked gate having a charge storage layer and a control gate, and method of manufacturing the same
08/11/2011	US20110193154 Non-volatile Memory Device
08/11/2011	US20110193153 Nonvolatile semiconductor memory device
08/11/2011	US20110193151 Nonvolatile semiconductor memory device
08/11/2011	US20110193148 Magnet-assisted transistor devices
08/11/2011	US20110193145 Crystal phase stabilizing structure
08/11/2011	US20110193144 Semiconductor device having elevated structure and method of manufacturing the same
08/11/2011	US20110193143 Electronic device including doped regions between channel and drain regions and a process of forming the same
08/11/2011	US20110193141 Method of fabricating a finfet device
08/11/2011	US20110193140 Electronic component for high temperatures
08/11/2011	US20110193139 Cell measuring device
08/11/2011	US20110193135 Methods of Forming Contact Structures Including Alternating Metal and Silicon Layers and Related Devices
08/11/2011	US20110193134 Step doping in extensions of iii-v family semiconductor devices
08/11/2011	US20110193132 Insulated gate semiconductor device
08/11/2011	US20110193131 Devices, Structures, and Methods Using Self-Aligned Resistive Source Extensions
08/11/2011	US20110193103 Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate
08/11/2011	US20110193101 Semiconductor device and method for manufacturing semiconductor device
08/11/2011	US20110193100 Sic semiconductor device and method of manufacturing the same
08/11/2011	US20110193099 Semiconductor device
08/11/2011	US20110193098 High voltage high package pressure semiconductor package
08/11/2011	US20110193097 Silicon carbide semiconductor
08/11/2011	US20110193096 Compound semiconductor device and manufacturing method thereof
08/11/2011	US20110193095 Semiconductor device and method for forming the same
08/11/2011	US20110193094 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
08/11/2011	US20110193092 Field effect transistor with conduction band electron channel and uni-terminal response
08/11/2011	US20110193091 Density of states engineered field effect transistor
08/11/2011	US20110193090 Thin-film transistor substrate, method of manufacturing the same and display panel having the same
08/11/2011	US20110193088 Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films
08/11/2011	US20110193084 Formulations comprising a mixture of zno cubanes and process using them to produce semiconductive zno layers
08/11/2011	US20110193083 Thin film transistor, method of manufacturing the same and flat panel display device having the same
08/11/2011	US20110193082 Field effect tranistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
08/11/2011	US20110193081 Semiconductor device
08/11/2011	US20110193080 Semiconductor device and electronic appliance
08/11/2011	US20110193079 Semiconductor device and method for manufacturing semiconductor device
08/11/2011	US20110193078 Field effect transistor
08/11/2011	US20110193077 Semiconductor device and method for manufacturing the same
08/11/2011	US20110193076 Thin film transistor panel and fabricating method thereof
08/11/2011	US20110193062 Growth of and Defect Reduction in Nanoscale Materials
08/11/2011	US20110193055 Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
08/11/2011	US20110193054 Deposition of materials
08/11/2011	US20110193053 Method for making side growth semiconductor nanowires and transistors obtained by said method
08/11/2011	US20110193052 Three-dimensional nanodevices including nanostructures
08/11/2011	US20110193045 Post deposition method for regrowth of crystalline phase change material
08/11/2011	DE19807745B4 Halbleitereinrichtung und Herstellungsverfahren einer Halbleitereinrichtung A semiconductor device and manufacturing method of a semiconductor device
08/11/2011	DE10361697B4 Verfahren zum Herstellen einer Grabenstruktur mit Oxidationsauskleidung, zum Herstellen einer integrierten Halbleiterschaltungsanordnung oder eines Chips, zum Herstellen eines Halbleiterbauelements sowie mit diesem Verfahren hergestellte integrierte Halbleiterschaltungsanordnung, hergestellter Chip, hergestelltes Halbleiterbauelement A method of manufacturing a structure with grave lining oxidation, semiconductor integrated circuit device manufactured for manufacturing a semiconductor integrated circuit device or chip, for the manufacture of a semiconductor device, with this method, produced chip semiconductor component produced
08/11/2011	DE10235198B4 Leistungs-Halbleitergleichrichter mit ringförmigen Gräben Power semiconductor rectifier with annular grooves
08/11/2011	DE10231729B4 Bauelement mit einer oberflächenmikromechanischen Struktur Component having a surface-micromechanical structure
08/11/2011	DE102011010112A1 Struktur und Verfahren zur Formgebung eines Grabenbodens in Silizium nach der Oxidation Structure and method for forming a grave soil in silicon after oxidation
08/11/2011	DE102011003843A1 SiC-Halbleitervorrichtung und Verfahren zu ihrer Herstellung SiC semiconductor device and process for their preparation
08/11/2011	DE102011003654A1 Halbleitervorrichtung mit isolierter Gate-Elektrode A semiconductor device with an insulated gate electrode
08/11/2011	DE102010064409A1 Halbleitervorrichtung Semiconductor device
08/11/2011	DE102010001788A1 Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit Scalable design for lateral semiconductor devices with high current carrying capacity
08/11/2011	DE102005024417B4 Halbleiterbauelement sowie Verfahren zum Herstellen eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
08/11/2011	DE10157402B4 Drucksensor mit einem Halbleitersensorchip Pressure sensor having a semiconductor sensor chip
08/11/2011	DE10046017B4 Halbleiter-Drucksensorvorrichtung mit von Schutzelement bedecktem Sensorchip Semiconductor pressure sensor device with covered by protective element sensor chip
08/10/2011	EP2355158A2 Field effect transistor with conduction band electron channel and uni-terminal response
08/10/2011	EP2355157A1 Semiconductor devices including variable-resistance materials and methods of operating the same
08/10/2011	EP2355154A2 Inverter circuit comprising density of states engineered field effect transistors
08/10/2011	EP2355139A1 Thin film transistor manufacturing method, thin film transistor, and electronic device
08/10/2011	EP2353183A2 Semiconductor devices with current shifting regions and related methods
08/10/2011	EP2353178A1 A method of fabricating a fin field effect transistor (finfet) device
08/10/2011	EP2070125B1 Power semiconductor device
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