| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/02/2012 | US20120025193 Semiconductor Device and Driving Method Thereof |
| 02/02/2012 | US20120025191 Semiconductor Device and Manufacturing Method Thereof |
| 02/02/2012 | US20120025187 Transistors, methods of manufacturing transistors, and electronic devices including transistors |
| 02/02/2012 | US20120025170 P-type semiconductor devices |
| 02/02/2012 | US20120025169 Nanostructure array transistor |
| 02/02/2012 | US20120025168 Strain control in semiconductor devices |
| 02/02/2012 | US20120025166 Method of fabricating nanosized filamentary carbon devices over a relatively large-area |
| 02/02/2012 | US20120025165 Flexible nanostructure electronic devices |
| 02/02/2012 | US20120024065 Acceleration sensor |
| 02/02/2012 | DE112007003116B4 Verfahren zur Herstellung eines verspannten Transistors und Transistor A method for producing a strained transistor and transistor |
| 02/02/2012 | DE102011079747A1 Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür Semiconductor device having a switch element and freewheeling diode, and control method therefor |
| 02/02/2012 | DE102010038742A1 Verformungstechnologie in dreidimensionalen Transistoren auf der Grundlage eines verformten Kanalhalbleitermaterials Technology in three-dimensional deformation transistors on the basis of a strained semiconductor channel material |
| 02/02/2012 | DE102010032813A1 Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil A method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component |
| 02/02/2012 | DE102009047890B4 Herstellverfahren für ein Halbleiterbauelement und Halbleiterbauelement mit Verbessertem Füllverhalten in einem Austauschgateverfahren durch Eckenverrundung auf der Grundlage eines Opferfüllmaterials Manufacturing process for a semiconductor device and semiconductor device with improved filling behavior in an exchange gate process by corner rounding on the basis of a sacrificial filler |
| 02/02/2012 | DE102009043329B4 Verspannungstechnologie in einer Kontaktebene von Halbleiterbauelementen mittels verspannter leitender Schichten und einem Isolierabstandshalter bei einem Halbleiterbauelement Bracing technology in a contact plane of semiconductor devices using strained conductive layers and an insulating spacer in a semiconductor device |
| 02/02/2012 | DE102009031156B4 Halbleiterbauelement mit nicht-isolierenden verspannten Materialschichten in einer Kontaktebene und Verfahren zu dessen Herstellung A semiconductor device having non-insulating strained material layers in a contact plane and process for its preparation |
| 02/02/2012 | DE102009023250B4 Halbleiterbauelement-Herstellverfahren mit erhöhter Ätzstoppfähigkeit während der Strukturierung von siliziumnitridenthaltenden Schichtstapeln durch Vorsehen einer chemisch hergestellten Oxidschicht während der Halbleiterbearbeitung Semiconductor device manufacturing method with increased Ätzstoppfähigkeit during the patterning of siliziumnitridenthaltenden layer stacks by providing an oxide layer chemically produced during the semiconductor processing |
| 02/02/2012 | DE102007052053B4 Eine Zugverformungsquelle unter Anwendung von Silizium/Germanium-Material in global verformtem Silizium A Zugverformungsquelle using silicon / germanium material in globally strained silicon |
| 02/02/2012 | DE102004010127B4 Halbleitervorrichtung mit einer Grabengatestruktur und Verfahren zum Herstellen dergleichen Like semiconductor device with a grave gate structure and methods for preparing |
| 02/02/2012 | CA2796857A1 Semiconductor device |
| 02/01/2012 | EP2413367A1 Transistors, Methods of Manufacturing Transistors, and Electronic Devices Including Transistors |
| 02/01/2012 | EP2413366A1 A switching element of LCDs or organic EL displays |
| 02/01/2012 | EP2413365A1 Mosfet and method for manufacturing mosfet |
| 02/01/2012 | EP2413364A1 Mosfet and method for manufacturing mosfet |
| 02/01/2012 | EP2413348A1 Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate |
| 02/01/2012 | EP2412028A1 A schottky device |
| 02/01/2012 | EP2412027A1 Configuration and fabrication of semiconductor structure using empty and filled wells |
| 02/01/2012 | EP2412025A1 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
| 02/01/2012 | EP2412024A1 Methods of forming semiconductor devices including epitaxial layers and related structures |
| 02/01/2012 | EP2412018A1 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket |
| 02/01/2012 | EP2412017A1 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile |
| 02/01/2012 | EP2412016A1 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses |
| 02/01/2012 | EP2412015A1 Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers |
| 02/01/2012 | EP2412014A1 Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima |
| 02/01/2012 | EP2412013A1 Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants |
| 02/01/2012 | EP2412012A1 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions |
| 02/01/2012 | EP2412010A1 Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor |
| 02/01/2012 | EP2411378A1 Tetrathiafulvalene derivative, and organic film and organic transistor using the same |
| 02/01/2012 | EP2041780B1 Semiconductor devices and methods of manufacture thereof |
| 02/01/2012 | EP1920467B1 Fin-type field effect transistor |
| 02/01/2012 | EP1532687B1 Field effect transistor |
| 02/01/2012 | EP1130634B1 Semiconductor device and method for forming silicon oxide film |
| 02/01/2012 | CN202134539U 一种有效收集衬底电流的ldmos版图结构 An effective collection of substrate current layout structure of ldmos |
| 02/01/2012 | CN202134538U 平板式可控硅 Flatbed SCR |
| 02/01/2012 | CN1734320B 显示装置及其制作方法 Display device and manufacturing method thereof |
| 02/01/2012 | CN1669160B 自对准纳米管场效应晶体管及其制造方法 Self quasi - nanometer field effect transistor and method of manufacturing the tube |
| 02/01/2012 | CN102341913A Highly doped layer for tunnel junctions in solar cells |
| 02/01/2012 | CN102341912A Method for forming semiconductor film, method for forming semiconductor device and semiconductor device |
| 02/01/2012 | CN102341909A Electrostatic discharge protection device |
| 02/01/2012 | CN102341898A Nitride semiconductor device and method of manufacturing the same |
| 02/01/2012 | CN102341897A Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains |
| 02/01/2012 | CN102341893A Method for manufacturing silicon carbide semiconductor device |
| 02/01/2012 | CN102341865A Programming method for nand flash memory device |
| 02/01/2012 | CN102339869A Semiconductor device with MIM capacitor and method for manufacturing the same |
| 02/01/2012 | CN102339868A Metal semiconductor field effect transistor with inverse isolating layer structure and manufacturing method thereof |
| 02/01/2012 | CN102339867A VDMOS (vertical-diffused metal oxide semiconductor) device and formation method thereof |
| 02/01/2012 | CN102339866A Terminal structure of longitudinal double-diffusion MOSFET (metal-oxide-semiconductor field effect transistor) with super-junction structure |
| 02/01/2012 | CN102339865A Semiconductor strain metal oxide semiconductor (MOS) device provided with strain enhancement structure and preparation process for semiconductor strain metal oxide semiconductor (MOS) device |
| 02/01/2012 | CN102339864A LDMOS (laterally diffused metal oxide semiconductor) transistor structure and forming method thereof |
| 02/01/2012 | CN102339863A Sic semiconductor device |
| 02/01/2012 | CN102339862A Semiconductor device including a channel stop zone |
| 02/01/2012 | CN102339861A Semiconductor device |
| 02/01/2012 | CN102339860A Semiconductor device and manufacturing method thereof |
| 02/01/2012 | CN102339859A Metal-oxide-semiconductor (MOS) transistor and formation method thereof |
| 02/01/2012 | CN102339858A p-type semiconductor device and production method thereof |
| 02/01/2012 | CN102339857A DMOS device and manufacturing methods thereof |
| 02/01/2012 | CN102339856A Recessed channel negative differential resistance-based memory cell |
| 02/01/2012 | CN102339855A Interconnection structure and manufacturing method thereof |
| 02/01/2012 | CN102339854A Vertical transistor component |
| 02/01/2012 | CN102339853A P-channel lateral double-diffusion metal oxide semiconductor device |
| 02/01/2012 | CN102339852A Semiconductor device and method for manufacturing same |
| 02/01/2012 | CN102339851A Power semiconductor with polysilicon structure at bottom of trench and method for manufacturing same |
| 02/01/2012 | CN102339850A Octagonal latticed metal-oxide-semiconductor field-effect transistor (MOSFET) power tube layout structure |
| 02/01/2012 | CN102339846A Semiconductor memory element possessing transistor with adjustable grid resistance value |
| 02/01/2012 | CN102339835A Semiconductor assembly and electroluminescent assembly and manufacture method thereof |
| 02/01/2012 | CN102339834A Flash memory unit and forming method thereof |
| 02/01/2012 | CN102339833A High-reliability split-gate nonvolatile memory structure with high-speed low-voltage operation function |
| 02/01/2012 | CN102339827A Integration of metal-oxide-semiconductor field-effect transistor (MOSFET) and Schottky diode and method for manufacturing same |
| 02/01/2012 | CN102339812A 接触结构及半导体器件 Contact structure and semiconductor device |
| 02/01/2012 | CN102339783A Element isolation structure of semiconductor and method for forming the same |
| 02/01/2012 | CN102339757A Method for manufacturing semiconductor devices having a glass substrate |
| 02/01/2012 | CN102339756A Methods for modification and preparation of ZnO thin film transistor |
| 02/01/2012 | CN102339755A High-voltage N-type junction field effect transistor and manufacturing method thereof |
| 02/01/2012 | CN102339753A Tunneling transistor structure and manufacturing method thereof |
| 02/01/2012 | CN102339752A Method for manufacturing semiconductor device based on gate replacement technique |
| 02/01/2012 | CN102339740A Gate structure of semiconductor device, semiconductor device and manufacturing method thereof |
| 02/01/2012 | CN102339736A Interface-optimized germanium-based semiconductor device and method for manufacturing same |
| 02/01/2012 | CN102339735A Preparation method for graphene transistor |
| 02/01/2012 | CN102338955A TFT (thin film transistor) pixel unit |
| 02/01/2012 | CN102034814B 一种静电放电防护器件 An electrostatic discharge protection device |
| 02/01/2012 | CN101834183B 半导体结构 The semiconductor structure |
| 02/01/2012 | CN101821861B 不含磷的基于氮化物的红和白发光二极管的制造 Based on the manufacturing of red and white light emitting diode nitride no phosphorous |
| 02/01/2012 | CN101819976B 半导体元件及其制法 Semiconductor element Jiqizhifa |
| 02/01/2012 | CN101803021B 供电装置及其驱动方法 Powered device and driving method |
| 02/01/2012 | CN101789450B 薄膜晶体管及制造富硅沟道层的方法 The method of manufacturing a thin film transistor and a channel layer of silicon-rich |
| 02/01/2012 | CN101789368B 半导体元件及其制造方法 Semiconductor device and manufacturing method |
| 02/01/2012 | CN101777555B Nmos场效应晶体管辅助触发的互补型scr结构 Nmos assist trigger a field effect transistor structure complementary scr |
| 02/01/2012 | CN101771078B 金属氧化物半导体晶体管结构 Metal oxide semiconductor transistor structure |
| 02/01/2012 | CN101685799B 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 02/01/2012 | CN101647093B 制造半导体装置的方法和半导体装置 The method of manufacturing a semiconductor device and a semiconductor device |