Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2012
02/09/2012US20120032247 Nonvolatile semiconductor memory device and method of manufacturing the same
02/09/2012US20120032246 Nonvolatile semiconductor memory device and method of manufacturing the same
02/09/2012US20120032245 Vertical Structure Non-Volatile Memory Device
02/09/2012US20120032244 Compact Semiconductor Package with Integrated Bypass Capacitor
02/09/2012US20120032243 Semiconductor device
02/09/2012US20120032240 Semiconductor device and manufacturing method thereof
02/09/2012US20120032239 Method for introducing channel stress and field effect transistor fabricated by the same
02/09/2012US20120032238 Contact etch stop layers of a field effect transistor
02/09/2012US20120032237 Semiconductor device structures and methods of forming semiconductor structures
02/09/2012US20120032234 Antiphase Domain Boundary-Free III-V Compound Semiconductor Material on Semiconductor Substrate and Method for Manufacturing Thereof
02/09/2012US20120032233 Silicon-germanium heterojunction bipolar transistor and manufacturing method of the same
02/09/2012US20120032232 Semiconductor device
02/09/2012US20120032231 Mos transistor structure with in-situ doped source and drain and method for forming the same
02/09/2012US20120032230 Method of forming strained semiconductor channel and semiconductor device
02/09/2012US20120032229 Silicon Wafer And Production Method Thereof
02/09/2012US20120032228 Semiconductor device
02/09/2012US20120032227 Low voltage tunnel field-effect transistor (tfet) and method of making same
02/09/2012US20120032191 Method for manufacturing silicon carbide substrate and silicon carbide substrate
02/09/2012US20120032190 Package and fabrication method of the same
02/09/2012US20120032189 Organopolysiloxane composition and semiconductor apparatus
02/09/2012US20120032188 Compound semiconductor device and method of manufacturing the same
02/09/2012US20120032185 LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
02/09/2012US20120032181 Semiconductor device and display device
02/09/2012US20120032179 Thin-film transistor array device, organic el display device, and method of manufacturing thin-film transistor array device
02/09/2012US20120032177 Display Device and Method for Manufacturing the Same
02/09/2012US20120032174 Semiconductor device, display device and electronic device
02/09/2012US20120032173 Top gate thin film transistor and display apparatus including the same
02/09/2012US20120032172 Semiconductor device
02/09/2012US20120032171 Semiconductor device
02/09/2012US20120032166 HETERO pn JUNCTION SEMICONDUCTOR AND PROCESS FOR PRODUCING THE SAME
02/09/2012US20120032165 Aqueous solution composition for fluorine doped metal oxide semiconductor and thin film transistor including the same
02/09/2012US20120032164 Semiconductor device
02/09/2012US20120032163 Semiconductor device and method for manufacturing the same
02/09/2012US20120032162 Semiconductor device
02/09/2012US20120032154 Semiconductor device, display device and electronic equipment
02/09/2012US20120032150 Semiconductor component, method of producing a semiconductor component, semiconductor device
02/09/2012US20120032149 Vertical Stacking of Carbon Nanotube Arrays for Current Enhancement and Control
02/09/2012US20120032146 Apparatus and methods for improving parallel conduction in a quantum well device
02/09/2012US20120031450 Thermoelectric semiconductor component
02/09/2012DE112010001315T5 LDMOS mit selbstausgerichteter vertikaler LDD und rückseitiger Drain LDMOS with self-aligned vertical LDD and rear-side drain
02/09/2012DE10215104B4 Drucksensor, bei welchem ein Harzhaftmittel zwischen einem Halbleiter-Sensorelement und einem Metallschaft verwendet wird Pressure sensor is used in which a resin adhesive between a semiconductor sensor element and a metal shaft
02/09/2012DE102011002534A1 Chippaket umfassend eine Vielzahl von Chips und Leiterausrichtung Chip package comprising a plurality of chips and circuit alignment
02/09/2012DE102010046213B3 Verfahren zur Herstellung eines Strukturelements und Halbleiterbauelement mit einem Strukturelement A process for producing a structural element and semiconductor device having a structural element
02/09/2012DE102010038879A1 Gleichrichteranordnung, welche Einpressdioden aufweist Rectifier assembly, which comprises insertion diodes
02/09/2012DE102010029533B3 Selektive Größenreduzierung von Kontaktelementen in einem Halbleiterbauelement Selective size reduction of contact elements in a semiconductor device
02/09/2012DE102010028466B4 Verfahren zum Bewahren der Integrität eines Gatestapels mit großem ε nach Einbettung in ein Verspannungsmaterial unter Anwendung einer Beschichtung Method for preserving the integrity of a gate stack with large ε after embedding in a bracing material using a coating
02/09/2012DE102009055433B4 Kontaktelemente von Halbleiterbauelementen, die auf der Grundlage einer teilweise aufgebrachten Aktivierungsschicht hergestellt sind, und entsprechende Herstellungsverfahren Contact elements of semiconductor devices that are formed on the basis of a partially applied activation layer, and corresponding production method
02/09/2012DE102006009942B4 Laterales Halbleiterbauelement mit niedrigem Einschaltwiderstand Lateral semiconductor component with a low switch
02/09/2012CA2790741A1 Method for manufacturing semiconductor device
02/09/2012CA2783310A1 Semiconductor device and method for manufacturing same
02/08/2012EP2416387A1 Nitride semiconductor element and method for producing the same
02/08/2012EP2416367A2 Multi-state memory cell with asymetric charge trapping
02/08/2012EP2416366A1 Semiconductor device and method of producing semiconductor device
02/08/2012EP2416365A1 Field-effect transistor
02/08/2012EP2416364A2 Second Schottky Contact Metal Layer to improve Gan Schottky Diode Performance
02/08/2012EP2416353A1 Semiconductor device
02/08/2012EP2416352A2 Methods for fabricating trench metal oxide semiconductor field effect transistors
02/08/2012EP2415079A1 Self-contained integrated circuit having transistors with separate threshold voltages
02/08/2012EP2415073A1 Method and structure for threshold voltage control and drive current improvement for high-k metal gate transistors
02/08/2012EP2415072A1 Vertical organic field effect transistor and method of its manufacture
02/08/2012EP2415071A1 Lateral diode and method of manufacturing the same
02/08/2012EP2415069A1 All-electron battery having area-enhanced electrodes
02/08/2012EP1947439B1 Semiconductor pressure sensor
02/08/2012EP1407493B1 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
02/08/2012CN202142536U 一种高频晶体管 A high-frequency transistors
02/08/2012CN202142535U 一种薄膜场效应晶体管和液晶显示器 A thin film field-effect transistor and liquid crystal displays
02/08/2012CN1921005B 基于应变SiGe沟道的高速、高抗辐照的铁电存储器 Based strained SiGe channel high-speed, high resistance to radiation ferroelectric memory
02/08/2012CN1918710B 小表面有源半导体元件 Small surface active semiconductor element
02/08/2012CN1881595B 半导体装置及其制作方法 Semiconductor device and manufacturing method thereof
02/08/2012CN1881594B 半导体装置及其制作方法 Semiconductor device and manufacturing method thereof
02/08/2012CN1674320B 有机场效应晶体管及制造方法和含该晶体管的平板显示器 Organic field effect transistor and method of manufacturing and flat panel displays containing the transistor
02/08/2012CN102349159A 薄膜晶体管 The thin film transistor
02/08/2012CN102349158A Method for manufacturing semiconductor device
02/08/2012CN102349157A Thin film transistor having a barrier layer as a constituting layer and cu-alloy sputtering target used for sputter film formation of the barrier layer
02/08/2012CN102349156A High voltage semiconductor device and driving circuit
02/08/2012CN102349155A Patterned electrically conductive and optically transparent layer over semiconductor device
02/08/2012CN102349140A Method for fabricating semiconductor components using maskless back side alignment to conductive vias
02/08/2012CN102349133A Semiconductor device and method of manufacturing a semiconductor device
02/08/2012CN102348738A Fluoropolymer and thin organic film comprising same
02/08/2012CN102348728A Polymer, organic thin film comprising the polymer, and organic thin-film element including same
02/08/2012CN102348701A Branched compound, and organic thin film and organic thin film element each comprising same
02/08/2012CN102348700A Conjugated compound, and organic thin film and organic thin film element each comprising same
02/08/2012CN102348657A Glass compositions used in conductors for photovoltaic cells
02/08/2012CN102348656A Glass compositions used in conductors for photovoltaic cells
02/08/2012CN102347373A 肖特基二极管 Schottky diodes
02/08/2012CN102347372A Normally-off field effect transistor, manufacturing method therefor and method for programming power field effect transistor
02/08/2012CN102347371A Nonvolatile semiconductor memory transistor and method for manufacturing nonvolatile semiconductor memory
02/08/2012CN102347370A Nonvolatile semiconductor memory transistor and method for manufacturing nonvolatile semiconductor memory
02/08/2012CN102347369A Thin-film transistor sensor, method of manufacturing thin-film transistor sensor, and thin-film transistor array
02/08/2012CN102347368A Transistor, method of manufacturing transistor, and electronic device including transistor
02/08/2012CN102347367A Structure of radiation-resistant MOS (Metal Oxide Semiconductor) device based on partially-consumed type SOI (Silicon-On-Insulator) process
02/08/2012CN102347366A Mos type semiconductor device and method of manufacturing same
02/08/2012CN102347365A Bidirectional switch and manufacture method thereof
02/08/2012CN102347364A Semiconductor device with drift regions and compensation regions
02/08/2012CN102347363A Method and structure for balancing power and performance using fluorine and nitrogen doped substrates
02/08/2012CN102347362A Semiconductor device with metal gates and method for fabricating same
02/08/2012CN102347361A Field effect transistor and manufacture method thereof
02/08/2012CN102347360A Semiconductor device and manufacture method thereof
02/08/2012CN102347359A Power metal oxide semiconductor field effect transistor (MOSFET) device and method for manufacturing same
02/08/2012CN102347358A Semiconductor device structure and manufacturing method thereof