Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2013
03/28/2013US20130075747 Esd protection using low leakage zener diodes formed with microwave radiation
03/28/2013US20130075746 Lateral PNP Bipolar Transistor with Narrow Trench Emitter
03/28/2013US20130075745 Thin-film semiconductor device, display apparatus, and method for manufacturing thin-film semiconductor device
03/28/2013US20130075743 Semiconductor device and method of manufacturing semiconductor device
03/28/2013US20130075742 Nonvolatile semiconductor memory device
03/28/2013US20130075741 Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers
03/28/2013US20130075740 P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof
03/28/2013US20130075739 Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
03/28/2013US20130075736 Thin film transistor array panel and manufacturing method thereof
03/28/2013US20130075735 Semiconductor device and method for manufacturing the same
03/28/2013US20130075734 Thin film transistor device with accurately aligned electrode patterns
03/28/2013US20130075733 Method for manufacturing semiconductor device and semiconductor device
03/28/2013US20130075732 Semiconductor device and method for manufacturing the same
03/28/2013US20130075731 Manufacturing method for thin film transistor and thin film transistor manufactured by them
03/28/2013US20130075730 Vertical pnp device in a silicon-germanium bicmos process and manufacturing method thereof
03/28/2013US20130075729 Fin-Based Bipolar Junction Transistor and Method for Fabrication
03/28/2013US20130075728 Array substrate and display apparatus using the same
03/28/2013US20130075724 Semiconductor arrangement with an integrated hall sensor
03/28/2013US20130075723 Semiconductor Device, Display Device, And Electronic Appliance
03/28/2013US20130075722 Semiconductor device
03/28/2013US20130075721 Semiconductor device
03/28/2013US20130075720 Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
03/28/2013US20130075719 Thin film transistor, method for manufacturing same, and display device
03/28/2013US20130075717 Thin film transistor
03/28/2013US20130075711 Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, el display panel, and el display apparatus
03/28/2013US20130075709 Light Emitting Device and Electronic Equipment
03/28/2013US20130075703 Peptide nanostructures encapsulating a foreign material and method of manufacturing same
03/28/2013US20130075702 Tunable Hot-Electron Transfer Within a Nanostructure
03/28/2013US20130075701 Programmable array of silicon nanowire field effect transistor and method for fabricating the same
03/28/2013US20130075700 Electrode Structure Including Graphene And Field Effect Transistor Having The Same
03/28/2013US20130075699 Nano-structure arrays for emr imaging
03/28/2013US20130075698 Semiconductor device
03/28/2013US20130075690 Ammonia Nanosensors, and Environmental Control System
03/28/2013DE112011102011T5 Herstellung eines Tunnel-FET mit vertikalem Heteroübergang Producing a tunnel FET with vertical heterojunction
03/28/2013DE112011101433T5 Stressor mit eingebetteter Dotierstoff-Monoschicht für hochentwickelten CMOS-Halbleiter Stressor with embedded dopant monolayer for advanced CMOS semiconductor
03/28/2013DE10352765B4 Hetero-Bipolartransistor mit einem schmalen Dotierungsprofil Hetero-bipolar transistor with a narrow doping profile
03/28/2013DE102012217562A1 Halbleitervorrichtung und verfahren zu deren herstellung Semiconductor device and process for their preparation
03/28/2013DE102012216969A1 Halbleiterbauelement mit einem Halbleitervia und Verfahren zum Herstellen eines Halbleiterbauelements A semiconductor device with a Halbleitervia and method of manufacturing a semiconductor device
03/28/2013DE102012216909A1 Halbleitereinrichtung mit lateralem Element Semiconductor device having a lateral element
03/28/2013DE102012102781A1 3D-Halbleiterbauelement und Verfahren zur Herstellung desselben Of the same 3-D semiconductor device and process for producing
03/28/2013DE102011115603A1 Method for defining design rules to design field plates of structures of semiconductor transistors in integrated circuit, involves carrying out longitudinal extension of field plates against reverse voltage corresponding to field plates
03/28/2013DE102011114186A1 Power semiconductor device for use as e.g. pole switch for circuit breaker, has semiconductor element with power FETs that are electrically connected to each other through drain, where gates and sources are disconnected
03/28/2013DE102011090170A1 Erhöhte Integrität von Metallgatestapeln mit großem ε durch Herstellen von STI-Gebieten nach den Gatemetallen Increased integrity of metal gate stacks with large ε by preparing STI regions by the gate metals
03/28/2013DE102011083644A1 Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren Micromechanical sensor device with movable gate and method of manufacture
03/28/2013DE102007063723B4 Verfahren zur Finnen-Struktur-Silizidierung Process for the fin structure silicidation
03/27/2013EP2573818A1 Group III-V device structure having a selectively reduced impurity concentration
03/27/2013EP2573808A1 Integrated circuit using FD-SOI technology with shared box and a means for polarising opposite doping floorplans located in the same box
03/27/2013EP2573048A1 Titanium oxide particles, process for producing same, magnetic memory, optical information recording medium, and charge accumulation type memory
03/27/2013EP2572383A1 Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel
03/27/2013EP2572381A1 Integrated circuit, electronic device and esd protection therefor
03/27/2013EP2572371A1 Memory device comprising a junctionless thin- film transistor
03/27/2013CN202839623U Semiconductor device
03/27/2013CN202839622U Oxide thin-film transistor, array substrate and display device
03/27/2013CN202839621U 薄膜晶体管 Thin film transistor
03/27/2013CN202839620U Super junction metal oxide semiconductor field effect transistor (MOSFET) component
03/27/2013CN202839619U High-voltage semiconductor device and terminal thereof
03/27/2013CN202839618U Epitaxial wafer and super junction power device
03/27/2013CN202839617U Epitaxial wafer of resistivity gradient distribution
03/27/2013CN202839616U IGBT capable of realizing local service lifetime control
03/27/2013CN202839590U Multi-cell high-power thyristor aluminum gasket structure and thyristor
03/27/2013CN202839584U Semiconductor device
03/27/2013CN202839583U Semiconductor device
03/27/2013CN202839549U Semiconductor device
03/27/2013CN1842745B Thin film transistor, manufacturing method and method of manufacturing display
03/27/2013CN1567078B Wiring and making method thereof including the described wired semiconductor device and dry etching process
03/27/2013CN103003949A Schottky barrier diode with perimeter capacitance well junction
03/27/2013CN103003948A 二极管 Diode
03/27/2013CN103003947A Display device, thin-film transistor used in display device, and thin-film transistor manufacturing method
03/27/2013CN103003946A Semiconductor device and process for production thereof
03/27/2013CN103003934A Semiconductor device
03/27/2013CN103003931A Epitaxial substrate for semiconductor element, semiconductor element, pn junction diode, and production method for epitaxial substrate for semiconductor element
03/27/2013CN103003930A Electric field-effect transistor
03/27/2013CN103003929A Compound semiconductor device and process for production thereof
03/27/2013CN103003928A Thin film semiconductor device manufacturing method, thin film semiconductor array substrate manufacturing method, crystal silicon thin film forming method, and crystal silicon thin film forming device
03/27/2013CN103003861A Display device and method for manufacturing display device
03/27/2013CN103003860A Cu alloy film for display device, and display device
03/27/2013CN103000699A Thin high-power and low-forward surface-mounted packaging diode
03/27/2013CN103000698A Silicon carbide (SiC) junction barrier Schottky diode and method for manufacturing same
03/27/2013CN103000697A Silicon carbide (SiC) Schottky diode and method for manufacturing same
03/27/2013CN103000696A Power diode device structure allowing for increasing of testing precision of forward characteristics
03/27/2013CN103000695A Flash memory device and method of manufacturing the same
03/27/2013CN103000694A Thin film transistor and manufacture method, array substrate and display device thereof
03/27/2013CN103000693A Thin-film transistor, display part, manufacturing method of display part, and display device
03/27/2013CN103000692A Thin-film transistor structure and manufacturing method thereof
03/27/2013CN103000691A Half-FinFET semiconductor device and related method
03/27/2013CN103000690A Semiconductor device and method for manufacturing same
03/27/2013CN103000689A Semiconductor device and manufacturing method thereof
03/27/2013CN103000688A Finned-type field-effect transistor structure and finned-type field-effect transistor forming method
03/27/2013CN103000687A Non-planar semiconductor structure and process for same
03/27/2013CN103000686A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
03/27/2013CN103000685A Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit
03/27/2013CN103000684A Semiconductor crystal substrate, manufacturing method of semiconductor crystal substrate, manufacturing method of semiconductor device, power unit, and amplifier
03/27/2013CN103000683A Compound semiconductor device and method of manufacutring the same
03/27/2013CN103000682A Nitride semiconductor device
03/27/2013CN103000681A Semiconductor device and method for manufacturing the same
03/27/2013CN103000680A Heterojunction bipolar transistor with electrode shielding structure and manufacturing method thereof
03/27/2013CN103000679A Low-resistance polycrystal connection base region full-autocollimation bipolar transistor and manufacture method thereof
03/27/2013CN103000678A Bipolar transistor with separated outer base region and collector region and manufacture method thereof
03/27/2013CN103000677A Lateral bipolar transistor with isolation oxide layer and preparation method thereof
03/27/2013CN103000676A Lateral bipolar transistor and method for preparing same
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