| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/11/2013 | US20130087828 Semiconductor device and method for manufacturing same |
| 04/11/2013 | US20130087810 Fin field-effect transistor structure |
| 04/11/2013 | US20130087809 METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF |
| 04/11/2013 | US20130087808 Sic bipolar junction transistor with overgrown emitter |
| 04/11/2013 | US20130087807 Epitaxial growth substrate, semiconductor device, and epitaxial growth method |
| 04/11/2013 | US20130087805 Semiconductor light emitting device |
| 04/11/2013 | US20130087804 Semiconductor structure and method of forming the same |
| 04/11/2013 | US20130087803 Monolithically integrated hemt and schottky diode |
| 04/11/2013 | US20130087802 Thin film transistor, fabrication method therefor, and display device |
| 04/11/2013 | US20130087801 Liquid crystal display device and manufacturing method thereof |
| 04/11/2013 | US20130087799 Bipolar transistor manufacturing method, bipolar transistor and integrated circuit |
| 04/11/2013 | US20130087792 Pixel structure of reflective type electrophoretic display device and method of making the same |
| 04/11/2013 | US20130087791 Display devices and fabrication methods thereof |
| 04/11/2013 | US20130087790 Semiconductor device and method for manufacturing the same |
| 04/11/2013 | US20130087785 Semiconductor device and method for manufacturing the same |
| 04/11/2013 | US20130087784 Semiconductor device and manufacturing method thereof |
| 04/11/2013 | US20130087783 Methods for depositing a silicon containing layer with argon gas dilution |
| 04/11/2013 | US20130087782 Oxide semiconductor film and semiconductor device |
| 04/11/2013 | US20130087781 Metal oxide thin film transistor |
| 04/11/2013 | US20130087775 Light Emitting Device |
| 04/11/2013 | US20130087766 Scalable quantum computer architecture with coupled donor-quantum dot qubits |
| 04/11/2013 | US20130087762 Nitride semiconductor wafer, nitride semiconductor device, and method for growing nitride semiconductor crystal |
| 04/11/2013 | US20130087759 Light Emitting Diode (LED) Using Carbon Materials |
| 04/11/2013 | DE112011100975T5 Biaxial verspannte Feldeffekttransistor-Bauelemente Biaxially strained field effect transistor devices |
| 04/11/2013 | DE112011100710T5 MOS-Transistor mit kombinierter Source mit kammförmigem Gate und Verfahren zu seiner Herstellung MOS transistor having source combined with kammförmigem gate and process for its preparation |
| 04/11/2013 | DE112010003697T5 Niedrigspannungs-laserdioden auf ( 20-21) gallium- und stickstoffhaltigen substraten Low-voltage laser diodes on (20-21) gallium and nitrogen-containing substrates |
| 04/11/2013 | DE102012217482A1 Strukturieren von Kontakten in Kohlenstoff-Nanoröhren-Einheiten Organize contacts into carbon nanotubes units |
| 04/11/2013 | DE102011084145A1 Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung A process for the production of high-performance, electrically stable, semi-conductive metal oxide layers produced by the method and the use thereof |
| 04/11/2013 | DE102011054372A1 Method for manufacturing e.g. MOSFET structure utilized in various devices for e.g. driving electric motor in motor vehicle, involves removing dielectric layers from vertical trench upper portion, where conductive region is remains covered |
| 04/11/2013 | DE102009042324B4 Verfahren und Strukturen zum Ändern der Verspannung in III-Nitridmaterialien Procedures and structures for changing the tension in III-nitride materials |
| 04/10/2013 | EP2579316A1 Thin film transistor and manufacturing method thereof |
| 04/10/2013 | EP2579315A1 Thin film transistor, contact structure, substrate, display device, and processes for producing same |
| 04/10/2013 | EP2579314A2 Semiconductor device and manufacturing method of semiconductor device |
| 04/10/2013 | EP2579310A2 One-time programmable device having an LDMOS structure and related manufacturing method |
| 04/10/2013 | EP2579308A2 Stacked semiconductor devices |
| 04/10/2013 | EP2579237A1 Thin film transistor substrate and method for producing same |
| 04/10/2013 | EP2579094A1 Liquid crystal display device |
| 04/10/2013 | EP2579010A1 Surface stress sensor |
| 04/10/2013 | EP2577735A2 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making |
| 04/10/2013 | EP2577730A2 Integrated circuit having a junctionless depletion-mode fet device |
| 04/10/2013 | CN202871802U Plastic packaging epitaxial ultrafast recovery diode |
| 04/10/2013 | CN202871801U High-performance heavy-current VDMOS power device chip double-point bonding packaging structure |
| 04/10/2013 | CN202871800U Semiconductor device comprising junction field effect transistor |
| 04/10/2013 | CN202871799U High-voltage-operation-used transistor with isolation body and semiconductor die |
| 04/10/2013 | CN202871798U Semiconductor device |
| 04/10/2013 | CN202871797U Transverse high-voltage transistor |
| 04/10/2013 | CN202871796U IGBT chip variable grid internal resistor |
| 04/10/2013 | CN202871795U Low resistivity ohmic contact N-type silicon transistor die |
| 04/10/2013 | CN103038889A Laminate structure including oxide semiconductor thin film layer, and thin film transistor |
| 04/10/2013 | CN103038888A Oxide for semiconductor layer and sputtering target of thin film transistor, and thin film transistor |
| 04/10/2013 | CN103038887A Thin film semiconductor device and method for manufacturing thin film semiconductor device |
| 04/10/2013 | CN103038886A Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making |
| 04/10/2013 | CN103038869A 场效应晶体管 FET |
| 04/10/2013 | CN103038866A 半导体装置 Semiconductor device |
| 04/10/2013 | CN103038721A Advanced transistors with punch through suppression |
| 04/10/2013 | CN103035751A 肖特基二极管 Schottky diodes |
| 04/10/2013 | CN103035750A Pin diode |
| 04/10/2013 | CN103035749A Horizontal zener diode structure and implement method thereof in germanium-silicon bipolar complementary metal oxide semiconducto (BiCMOS) technology |
| 04/10/2013 | CN103035748A Zener diode and manufacturing method in germanium-silicon bipolar complementary metal oxide semiconducto (BiCMOS) technology |
| 04/10/2013 | CN103035747A Point contact type diode |
| 04/10/2013 | CN103035746A Current regulative diode and manufacturing method thereof |
| 04/10/2013 | CN103035745A Constant current diode formed by grooving process and manufacturing method thereof |
| 04/10/2013 | CN103035744A Floating diode and manufacturing method thereof |
| 04/10/2013 | CN103035743A Diode with controllable breakdown voltage |
| 04/10/2013 | CN103035742A Pnpn diode |
| 04/10/2013 | CN103035741A Silicon bidirectional trigger diode |
| 04/10/2013 | CN103035740A Two-way switch two-electrode tube |
| 04/10/2013 | CN103035739A Silicone plastic package rectifier diode |
| 04/10/2013 | CN103035738A Silicon plastic packaging patch diode |
| 04/10/2013 | CN103035737A Display device, method of manufacturing the same, and electronic unit |
| 04/10/2013 | CN103035736A Semiconductor device and method for manufacturing the same |
| 04/10/2013 | CN103035735A Semiconductor device and method for manufacturing the same |
| 04/10/2013 | CN103035734A Metal oxide thin film transistor |
| 04/10/2013 | CN103035733A High-voltage metal oxide semiconductor (MOS) transistor structure and manufacturing method thereof |
| 04/10/2013 | CN103035732A VDMOS transistor and preparation method thereof |
| 04/10/2013 | CN103035731A Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof |
| 04/10/2013 | CN103035730A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device and manufacturing method thereof |
| 04/10/2013 | CN103035729A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device and manufacturing method thereof |
| 04/10/2013 | CN103035728A Literally diffused metal oxide semiconductor (LDMOS) device applied to radio frequency field and manufacturing method thereof |
| 04/10/2013 | CN103035727A Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
| 04/10/2013 | CN103035726A Dual-gate VDMOS device |
| 04/10/2013 | CN103035725A Strapped dual-gate vdmos device |
| 04/10/2013 | CN103035724A Radio frequency horizontal double-diffusion-field effect transistor and manufacturing method thereof |
| 04/10/2013 | CN103035723A Super junction-depth groove structure |
| 04/10/2013 | CN103035722A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof |
| 04/10/2013 | CN103035721A Super junction device and manufacturing method thereof |
| 04/10/2013 | CN103035720A Super junction device and manufacturing method thereof |
| 04/10/2013 | CN103035719A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof |
| 04/10/2013 | CN103035718A Semiconductor component and manufacture method thereof |
| 04/10/2013 | CN103035717A Laterally diffused metal oxide semiconductor (LDMOS) component of step-shaped drifting area and manufacturing method thereof |
| 04/10/2013 | CN103035716A Ink jet head heating chip and manufacturing method thereof |
| 04/10/2013 | CN103035715A Transistors, methods of manufacturing thereof, and image sensor circuits with reduced rts noise |
| 04/10/2013 | CN103035714A Cellular structure of super junction metal oxide semiconductor field effect transistor (MOSFET) |
| 04/10/2013 | CN103035713A Finfet device and method of manufacturing same |
| 04/10/2013 | CN103035712A Semiconductor component and manufacture method thereof |
| 04/10/2013 | CN103035711A Semiconductor structure and manufacturing method thereof |
| 04/10/2013 | CN103035710A Metal oxide semiconductor element and manufacture method thereof |
| 04/10/2013 | CN103035709A Semiconductor structure and manufacturing method thereof |
| 04/10/2013 | CN103035708A Semiconductor structure and manufacturing method thereof |
| 04/10/2013 | CN103035707A Super-junction vertical gallium nitride based nitride heterojunction field effect transistor |