| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/18/2013 | US20130092945 Semiconductor device |
| 04/18/2013 | US20130092944 Semiconductor device and method of manufacturing semiconductor device |
| 04/18/2013 | US20130092943 Method for manufacturing semiconductor device |
| 04/18/2013 | US20130092942 Thin film transistor array panel and manufacturing method thereof |
| 04/18/2013 | US20130092940 Semiconductor device and method for manufacturing semiconductor device |
| 04/18/2013 | US20130092939 Bipolar transistor and method for manufacturing the same |
| 04/18/2013 | US20130092934 Display device |
| 04/18/2013 | US20130092931 Thin film transistors |
| 04/18/2013 | US20130092930 Semiconductor device |
| 04/18/2013 | US20130092929 Semiconductor device and manufacturing method thereof |
| 04/18/2013 | US20130092928 Semiconductor device and method for manufacturing semiconductor device |
| 04/18/2013 | US20130092926 Semiconductor device and manufacturing method thereof |
| 04/18/2013 | US20130092925 Semiconductor device and method of manufacturing the same |
| 04/18/2013 | US20130092924 Semiconductor device and method for manufacturing semiconductor device |
| 04/18/2013 | US20130092923 Active matrix substrate and method for manufacturing the same |
| 04/18/2013 | US20130092904 Organic thin-film transistor, method of manufacturing organic thin-film transistor, and display |
| 04/18/2013 | US20130092902 Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof |
| 04/18/2013 | DE112011101875T5 Halbleiteranordnung und Festkörperrelais, das diese verwendet Semiconductor device and solid state relay that uses this |
| 04/18/2013 | DE112010003992T5 Piezoelektrischer beschleunigungssensor A piezoelectric acceleration sensor |
| 04/18/2013 | DE112010003271T5 Hochfrequenz Fast Recovery Diode High frequency fast recovery diode |
| 04/18/2013 | DE102012218580A1 Kohlenstoffimplantation zur Anpassung der Austrittsarbeit bei einem Ersatzgate-Transistor Carbon implantation to adapt the work function for a replacement gate transistor |
| 04/18/2013 | DE102012217491A1 Verringerung der parasitären Kapazität in FinFETs durch Verwendung eines Luftspalts Reduce the parasitic capacitance in FinFETs by using an air gap |
| 04/18/2013 | DE102012217489A1 Verbesserung der Leistungsfähigkeit und Verringerung der Schwankungen von Einheiten mit schmalem Kanal Improving the performance and reducing the volatility of units with a narrow channel |
| 04/18/2013 | DE102012216329A1 Halbleitervorrichtung Semiconductor device |
| 04/18/2013 | DE102012202765B3 Halbleitermodul Semiconductor module |
| 04/18/2013 | DE102012109902A1 Leistungshalbleiterdiode, IGBT, und Verfahren für ihre Herstellung Power semiconductor diode, IGBT, and methods for their preparation |
| 04/18/2013 | DE10152911B9 Integrierte Schaltungsvorrichtungen, die aktive Bereiche mit erweiterten effektiven Breiten aufweisen, und Verfahren zur Herstellung derselben Integrated circuit devices having active regions with enhanced effective widths, and processes for making them |
| 04/18/2013 | DE10066433B4 Verfahren zur Herstellung eines Halbleitersubstrats A process for producing a semiconductor substrate |
| 04/17/2013 | EP2581940A1 Oscillation element and method for manufacturing oscillation element |
| 04/17/2013 | EP2581939A2 Semiconductor device |
| 04/17/2013 | EP2581930A1 Bipolar transistor manufacturing method, bipolar transistor and integrated circuit |
| 04/17/2013 | EP2581929A1 Epitaxial substrate and method for producing epitaxial substrate |
| 04/17/2013 | EP2580785A1 Nanocomposite material and its use in optoelectronics |
| 04/17/2013 | EP2580782A2 Schottky barrier diode with perimeter capacitance well junction |
| 04/17/2013 | EP2579940A1 Method for manufacturing a flexible intraocular retinal implant having doped diamond electrodes |
| 04/17/2013 | CN202888189U N-channel depletion type power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device |
| 04/17/2013 | CN202888188U LDMOS device with stepped multiple discontinuous field plates |
| 04/17/2013 | CN202888187U Semiconductor discharge tube |
| 04/17/2013 | CN202888186U Semiconductor discharge tube with plastic package pieces |
| 04/17/2013 | CN202888185U Flat packaging crimping type outlet electrode insulated gate bipolar transistor element |
| 04/17/2013 | CN202888184U Bipolar transistor of insulated gate |
| 04/17/2013 | CN202888178U A low-voltage diode chip with little electric leakage |
| 04/17/2013 | CN202888177U Array substrate and display unit |
| 04/17/2013 | CN202888176U ESD device structure based on BCD technology |
| 04/17/2013 | CN202888149U Full-pressure-welding packaging high-voltage semiconductor device |
| 04/17/2013 | CN103053027A Thin film transistor substrate |
| 04/17/2013 | CN103053026A Thin film transistor device and method for manufacturing thin film device |
| 04/17/2013 | CN103053025A Advanced transistors with threshold voltage set dopant structures |
| 04/17/2013 | CN103053015A Semiconductor device and method for manufacturing same |
| 04/17/2013 | CN103053014A Thin-film transistor substrate, and liquid crystal display device provided with same |
| 04/17/2013 | CN103050785A Structural wave-absorbing material with adjustable active frequency selective surface based on PIN (positive intrinsic negative) diode |
| 04/17/2013 | CN103050626A Solution method electrolyte thin film transistor and preparation method thereof |
| 04/17/2013 | CN103050549A Metal-oxide-metal capacitor structure |
| 04/17/2013 | CN103050548A 肖特基二极管及其制造方法 Schottky diode and its manufacturing method |
| 04/17/2013 | CN103050547A Power semiconductor diode, IGBT, and method for manufacturing thereof |
| 04/17/2013 | CN103050546A 半导体装置 Semiconductor device |
| 04/17/2013 | CN103050545A TVS (Transient Voltage Suppressor) diode and manufacturing method thereof |
| 04/17/2013 | CN103050544A Bottom-gate thin film transistor and preparation method thereof |
| 04/17/2013 | CN103050543A Film transistor |
| 04/17/2013 | CN103050542A Thin film transistor |
| 04/17/2013 | CN103050541A Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof |
| 04/17/2013 | CN103050540A Low-specific on-resistance lateral power device employing high-dielectric constant groove structure |
| 04/17/2013 | CN103050539A Terminal protection structure of super junction device |
| 04/17/2013 | CN103050538A Nanowire transistor and preparation method thereof |
| 04/17/2013 | CN103050537A Radio frequency lateral double-diffused field effect transistor and manufacturing method thereof |
| 04/17/2013 | CN103050536A Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof |
| 04/17/2013 | CN103050535A Super junction MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure having groove type terminal structure and preparation method thereof |
| 04/17/2013 | CN103050534A Structure and manufacture method of RFLDMOS (ratio frequency laterally diffused metal oxide semiconductor) thick field oxygen isolation medium layer |
| 04/17/2013 | CN103050533A Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications |
| 04/17/2013 | CN103050532A RF LDMOS (ratio frequency laterally diffused metal oxide semiconductor) device and manufacture method of RF LDMOS device |
| 04/17/2013 | CN103050531A RF LDMOS (ratio frequency laterally diffused metal oxide semiconductor) device and manufacture method of RF LDMOS device |
| 04/17/2013 | CN103050530A FinFET device and method of manufacturing same |
| 04/17/2013 | CN103050529A Low voltage intrinsic NMOS (N-channel metal oxide semiconductor) device and manufacturing method thereof |
| 04/17/2013 | CN103050528A LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor and manufacturing method thereof |
| 04/17/2013 | CN103050527A Improved structure of safety working area of high-voltage NMOS (N-channel metal oxide semiconductor) device and method thereof |
| 04/17/2013 | CN103050526A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and manufacturing method thereof |
| 04/17/2013 | CN103050525A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and manufacturing method thereof |
| 04/17/2013 | CN103050524A Semiconductor structure and manufacturing method thereof |
| 04/17/2013 | CN103050523A 绝缘栅双极型晶体管及其制造方法 Insulated gate bipolar transistor and its manufacturing method |
| 04/17/2013 | CN103050522A Lateral parasitic PNP triode in SiGe heterojunction bipolar transistor (HBT) process and manufacturing method for lateral parasitic PNP triode |
| 04/17/2013 | CN103050521A Collector region lead-out structure for SiGe heterojunction bipolar transistor (HBT) device, and manufacturing method for collector region lead-out structure |
| 04/17/2013 | CN103050520A SiGe HBT (Heterojunction Bipolar Transistor) apparatus and manufacturing method thereof |
| 04/17/2013 | CN103050519A SiGe heterojunction bipolar transistor (HBT) device and manufacturing method thereof |
| 04/17/2013 | CN103050518A SiGe heterojunction bipolar transistor and manufacturing method thereof |
| 04/17/2013 | CN103050517A Parasitic PNP (Plug and Play) device structure adopting SiGe HBT (Heterojunction Bipolar Transistor) technology, and manufacturing method thereof |
| 04/17/2013 | CN103050516A Structure for accurately controlling EB (Electron Beam) junction position and EB junction reverse breakdown voltage |
| 04/17/2013 | CN103050515A FinFET parasitic capacitance reduction using air gap |
| 04/17/2013 | CN103050514A Collecting electrode structure of power semiconductor |
| 04/17/2013 | CN103050513A Semiconductor structure and method for forming same |
| 04/17/2013 | CN103050512A Non-epitaxial high-voltage insulating N-type LDMOS (Laterally Diffused Metal Oxide Semiconductor) device structure |
| 04/17/2013 | CN103050511A Semiconductor structure and method of forming the same |
| 04/17/2013 | CN103050510A ESD (electronic static discharge) device in RFLDMOS (ratio frequency laterally diffused metal oxide semiconductor) process and manufacture method of ESD device |
| 04/17/2013 | CN103050509A Semiconductor chip integrating high and low voltage devices |
| 04/17/2013 | CN103050508A Terminal structure of super junction device |
| 04/17/2013 | CN103050441A Oxide thin film transistor preparation method |
| 04/17/2013 | CN103050413A Growing process of thin film transistor |
| 04/17/2013 | CN103050410A Manufacture method of low-temperature polycrystalline silicon thin film transistor and low-temperature polycrystalline silicon thin film transistor |
| 04/17/2013 | CN103050407A Embedded transistor |
| 04/17/2013 | CN103050403A Semiconductor structure and manufacturing method thereof |
| 04/17/2013 | CN103050400A Bipolar transistor manufacturing method, bipolar transistor and integrated circuit |