| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/10/2013 | CN103035706A Vertical gallium nitride based nitride heterojunction field effect transistor with polarized doped current barrier layer |
| 04/10/2013 | CN103035705A 高电子迁移率晶体管 High electron mobility transistor |
| 04/10/2013 | CN103035704A Semiconductor device and method of manufacturing the same |
| 04/10/2013 | CN103035703A Compound semiconductor device and manufacturing method therefor |
| 04/10/2013 | CN103035702A Compound semiconductor device and manufacturing method therefor |
| 04/10/2013 | CN103035701A Semiconductor device and method for fabricating the same |
| 04/10/2013 | CN103035700A Compound semiconductor device and method for fabricating the same |
| 04/10/2013 | CN103035699A Compound semiconductor device and method of manufacturing the same |
| 04/10/2013 | CN103035698A Semiconductor device |
| 04/10/2013 | CN103035697A Semiconductor device and fabrication method |
| 04/10/2013 | CN103035696A Compound semiconductor device and method for fabricating the same |
| 04/10/2013 | CN103035695A Low-capacity high-speed transmission semiconductor surge protective device |
| 04/10/2013 | CN103035694A Insulated gate bipolar translator (IGCB) chip with terminal protection structure and manufacturing method of IGCB chip with terminal protection structure |
| 04/10/2013 | CN103035693A Field stop type insulated gate bipolar transistor and manufacturing methods thereof |
| 04/10/2013 | CN103035692A 半导体装置 Semiconductor device |
| 04/10/2013 | CN103035691A Reverse conducting insulated gate bipolar transistor (IGBT) semiconductor device and manufacture method thereof |
| 04/10/2013 | CN103035690A Ultrahigh pressure germanium-silicon hetero-junction bipolar transistor and manufacturing method thereof |
| 04/10/2013 | CN103035689A Collector region out-leading structure of germanium-silicon heterojunction bipolar transistor (HBT) and manufacturing method thereof |
| 04/10/2013 | CN103035688A Germanium silicon heterojunction bipolar transistor (HBT) device and manufacturing method thereof |
| 04/10/2013 | CN103035687A Bipolar transistor with low-resistance shield layer under outer base region and manufacturing method thereof |
| 04/10/2013 | CN103035686A Buried silicide lifting outer base region full-automatic aligning bipolar transistor and preparation method thereof |
| 04/10/2013 | CN103035685A Selective epitaxy outer base region bipolar transistor containing buried oxygen layer and preparation method thereof |
| 04/10/2013 | CN103035684A Gate structure and manufacturing method thereof |
| 04/10/2013 | CN103035683A Compound semiconductor device and method of manufacturing the same |
| 04/10/2013 | CN103035682A Grid structure of multi-layer film and manufacturing method of grid structure |
| 04/10/2013 | CN103035681A Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
| 04/10/2013 | CN103035680A Super junction device |
| 04/10/2013 | CN103035679A Semiconductor device with self-charging field electrodes |
| 04/10/2013 | CN103035678A Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
| 04/10/2013 | CN103035677A Super junction structure, super junction metal-oxide semiconductor (MOS) transistor and production method of super junction structure |
| 04/10/2013 | CN103035676A Semiconductor device and method for manufacturing the same |
| 04/10/2013 | CN103035675A Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
| 04/10/2013 | CN103035674A Radio frequency horizontal double-diffusion-field effect transistor and manufacturing method thereof |
| 04/10/2013 | CN103035673A Edge termination structure for power semiconductor devices |
| 04/10/2013 | CN103035672A Compound semiconductor device and method of manufacturing the same |
| 04/10/2013 | CN103035671A Laterally diffused metal oxide semiconductor (LDMOS) device and manufacture method thereof |
| 04/10/2013 | CN103035670A Compound semiconductor device and method of manufacturing the same |
| 04/10/2013 | CN103035669A Pn junction with ultra-low junction capacity density and manufacture method thereof |
| 04/10/2013 | CN103035668A Lateral stack-type super junction power semiconductor device |
| 04/10/2013 | CN103035653A Pixel structure and manufacturing method of thin-film transistor |
| 04/10/2013 | CN103035649A 半导体存储装置以及半导体存储元件 The semiconductor memory device and a semiconductor memory element |
| 04/10/2013 | CN103035648A Flash memory unit structure and manufacture method thereof |
| 04/10/2013 | CN103035641A Semiconductor device |
| 04/10/2013 | CN103035636A Array substrate and display apparatus using the same |
| 04/10/2013 | CN103035634A Super junction device structure capable of improving snow slide tolerance ability |
| 04/10/2013 | CN103035577A Semiconductor structure and manufacturing method thereof |
| 04/10/2013 | CN103035574A Semiconductor device and fabrication method thereof |
| 04/10/2013 | CN103035569A Growth process of thin film transistor |
| 04/10/2013 | CN103035568A Thin film transistor (TFT) array substrate, manufacturing method and display device |
| 04/10/2013 | CN103035533A Ultra shallow junction semiconductor field effect transistor and preparation method thereof |
| 04/10/2013 | CN103035532A Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof |
| 04/10/2013 | CN103035529A Method for improving electric leakage in radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) |
| 04/10/2013 | CN103035527A Nitrogen passivation of source and drain recesses |
| 04/10/2013 | CN103035524A Semiconductor device and production method thereof |
| 04/10/2013 | CN103035522A Manufacturing method of compound semiconductor device |
| 04/10/2013 | CN103035519A Insulated gate bipolar transistor (IGBT) device and manufacture process method thereof |
| 04/10/2013 | CN103035254A System and method for magnetization switching through magnonic spin transfer torque |
| 04/10/2013 | CN103035192A Semiconductor device |
| 04/10/2013 | CN103033276A Silicon carbide (SIC) temperature sensor and manufacturing method thereof |
| 04/10/2013 | CN102299077B Semiconductor device and manufacturing method thereof |
| 04/10/2013 | CN102280496B Varactor, methods of forming the same, and three-dimensional integrated circuits using the same |
| 04/10/2013 | CN102231030B Pixel structure of thin film transistor liquid crystal display |
| 04/10/2013 | CN102208446B Tunneling current amplification transistor |
| 04/10/2013 | CN102136491B Static discharge protection device for gate insulation dual junction transistor |
| 04/10/2013 | CN102136465B Open-circuit embedding-removing test structure for trimmer-capacitance MOS (metal oxide semiconductor) varactor and variable capacitance diode |
| 04/10/2013 | CN102082167B Semiconductor nanostructure |
| 04/10/2013 | CN102037564B 半导体装置 Semiconductor device |
| 04/10/2013 | CN101971346B Structure and method for forming power devices with high aspect ratio contact openings |
| 04/10/2013 | CN101840891B Semiconductor structures, and methods of manufacturing the same. |
| 04/10/2013 | CN101764104B Semiconductor structures, methods of manufacturing the same, and methods of operating the same. |
| 04/10/2013 | CN101546766B High power and high temperature semiconductor power devices protected by non-uniform ballasted sources |
| 04/10/2013 | CN101281328B 图像显示系统 The image display system |
| 04/10/2013 | CN101241932B MOS device |
| 04/09/2013 | USRE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns |
| 04/09/2013 | US8417081 Organic electroluminescent optocouplers |
| 04/09/2013 | US8416611 Magnetoresistance effect element and magnetic random access memory |
| 04/09/2013 | US8415811 Semiconductor package and electronic component package |
| 04/09/2013 | US8415810 Integrated circuit package system with wire-in-film isolation barrier and method for manufacturing thereof |
| 04/09/2013 | US8415809 Flip chip overmold package |
| 04/09/2013 | US8415804 Semiconductor chip, method of fabricating the same, and stack module and memory card including the same |
| 04/09/2013 | US8415802 Strip conductor structure for minimizing thermomechanical loads |
| 04/09/2013 | US8415795 Semiconductor device and assembling method thereof |
| 04/09/2013 | US8415794 Semiconductor device having stable signal transmission at high speed and high frequency |
| 04/09/2013 | US8415773 Semiconductor component with buffer layer |
| 04/09/2013 | US8415771 Micro device transfer head with silicon electrode |
| 04/09/2013 | US8415768 Compliant monopolar micro device transfer head with silicon electrode |
| 04/09/2013 | US8415767 Compliant bipolar micro device transfer head with silicon electrodes |
| 04/09/2013 | US8415766 Process for smoothening III-N substrates |
| 04/09/2013 | US8415765 Semiconductor device including a guard ring or an inverted region |
| 04/09/2013 | US8415763 Tunable semiconductor device |
| 04/09/2013 | US8415762 Semiconductor device for performing photoelectric conversion |
| 04/09/2013 | US8415760 Sensor for detecting thermal radiation |
| 04/09/2013 | US8415756 Semiconductor device and method of manufacturing the same |
| 04/09/2013 | US8415755 Wheatstone-bridge magnetoresistive device |
| 04/09/2013 | US8415752 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
| 04/09/2013 | US8415751 Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain |
| 04/09/2013 | US8415749 Semiconductor structure with dielectric-sealed doped region |
| 04/09/2013 | US8415748 Use of epitaxial Ni silicide |
| 04/09/2013 | US8415747 Semiconductor device including diode |
| 04/09/2013 | US8415746 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor |