| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/03/2013 | CN103026491A Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors |
| 04/03/2013 | CN103026490A Hole doping of graphene |
| 04/03/2013 | CN103026482A Processing substrates using a temporary carrier |
| 04/03/2013 | CN103026474A Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device |
| 04/03/2013 | CN103026461A Process for filling deep trenches in a semiconductor material body, and semiconductor device resulting from the same process |
| 04/03/2013 | CN103026459A Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device |
| 04/03/2013 | CN103026398A Substrate and process for production thereof, and display device |
| 04/03/2013 | CN103022156A Trench MOSFET with integrated Schottky barrier diode |
| 04/03/2013 | CN103022155A Groove MOS (metal oxide semiconductor) structure Schottky diode and preparation method thereof |
| 04/03/2013 | CN103022154A Fast recovery diode and manufacturing method thereof |
| 04/03/2013 | CN103022153A Flexible thin-film transistor |
| 04/03/2013 | CN103022152A Thin film transistor |
| 04/03/2013 | CN103022151A Thin film transistor |
| 04/03/2013 | CN103022150A Thin film transistor, method for manufacturing same, array substrate and display device |
| 04/03/2013 | CN103022149A Thin film transistor, array base plate, manufacturing method and display device |
| 04/03/2013 | CN103022148A Array substrate, manufacture method of array substrate and display device |
| 04/03/2013 | CN103022147A Array substrate, preparation method of array substrate, thin film transistor and display device |
| 04/03/2013 | CN103022146A Oxide semiconductor material and thin film transistor |
| 04/03/2013 | CN103022145A Array substrate, display device and preparation method |
| 04/03/2013 | CN103022144A Oxide semiconductor |
| 04/03/2013 | CN103022143A Thin film transistor, method for manufacturing same, and display device |
| 04/03/2013 | CN103022142A 薄膜晶体管 The thin film transistor |
| 04/03/2013 | CN103022141A Thin-film transistor, double-gate-drive and transversally-arrayed pixel structure and display panel |
| 04/03/2013 | CN103022140A Lateral transistor and manufacturing method thereof |
| 04/03/2013 | CN103022139A Semiconductor structure with insulating buried layer and manufacturing method thereof |
| 04/03/2013 | CN103022138A High-reliability depletion type power semiconductor device and manufacturing method thereof |
| 04/03/2013 | CN103022137A High-efficiency Schottky chip |
| 04/03/2013 | CN103022136A MOS (metal-oxide-semiconductor) transistor with T-shaped gate structure |
| 04/03/2013 | CN103022135A III-V group semiconductor nano-wire field effect transistor device and manufacturing method thereof |
| 04/03/2013 | CN103022134A Silicon on insulator (SOI) transverse high voltage power device with ultralow specific on resistance |
| 04/03/2013 | CN103022133A Semiconductor device |
| 04/03/2013 | CN103022132A Semiconductor device with semiconductor via |
| 04/03/2013 | CN103022131A 半导体装置 Semiconductor device |
| 04/03/2013 | CN103022130A 半导体装置 Semiconductor device |
| 04/03/2013 | CN103022129A Semiconductor device and manufacturing method of the same |
| 04/03/2013 | CN103022128A 半导体装置 Semiconductor device |
| 04/03/2013 | CN103022127A Power semiconductor device |
| 04/03/2013 | CN103022126A Semiconductor device with strained channels induced by high-k capping metal layers |
| 04/03/2013 | CN103022125A NLDMOS (N type Lateral Double Diffusion Metal-Oxide-Semiconductor) device in BCD (Bipolar, CMOS and DMOS) process and manufacturing method |
| 04/03/2013 | CN103022124A Double-gate transistor and manufacturing method thereof |
| 04/03/2013 | CN103022123A Super junction semiconductor device and manufacturing method thereof |
| 04/03/2013 | CN103022122A Compound semiconductor device and method of manufacturing the same |
| 04/03/2013 | CN103022121A Semiconductor device and method of manufacturing the same |
| 04/03/2013 | CN103022120A Nitride semiconductor device and manufacturing method for the same |
| 04/03/2013 | CN103022119A Semiconductor device |
| 04/03/2013 | CN103022118A Nitride semiconductor device |
| 04/03/2013 | CN103022117A Compound semiconductor device and method of manufacturing the same |
| 04/03/2013 | CN103022116A Compound semiconductor device and method of manufacturing the same |
| 04/03/2013 | CN103022115A 半导体装置 Semiconductor device |
| 04/03/2013 | CN103022114A High voltage and high power IGBT (Insulated Gate Bipolar Translator) chip based on cutoff rings and designing method of chip |
| 04/03/2013 | CN103022113A Insulated gate bipolar transistor structure and preparation method thereof |
| 04/03/2013 | CN103022112A Lateral PNP bipolar transistor formed with multiple epitaxial layers |
| 04/03/2013 | CN103022111A Bipolar transistor with low-resistance collector region and preparation method of bipolar transistor |
| 04/03/2013 | CN103022110A Bipolar transistor with fully self-alignment metal silicide lifting outer base region and preparation method of bipolar transistor |
| 04/03/2013 | CN103022109A Bipolar transistor with fully self-alignment local oxidized lifting outer base region and preparation method of bipolar transistor |
| 04/03/2013 | CN103022108A 双极晶体管及其制备方法 A bipolar transistor and a method for preparing |
| 04/03/2013 | CN103022107A Fin-based bipolar junction transistor and method for fabrication |
| 04/03/2013 | CN103022106A Electrode structure including graphene and feield effect transistor having the same |
| 04/03/2013 | CN103022105A Semiconductor device and method for manufacturing semiconductor device |
| 04/03/2013 | CN103022104A Trench type power transistor device and method of fabricating the same |
| 04/03/2013 | CN103022103A A 3D semiconductor device and method of manufacturing same |
| 04/03/2013 | CN103022102A Multi-layer scavenging metal gate stack for ultra-thin interfacial dielctric layer |
| 04/03/2013 | CN103022101A Metal gate stack having TIALN blocking/wetting layer |
| 04/03/2013 | CN103022100A Structure for finned field effect transistor and forming method of finned field effect transistor |
| 04/03/2013 | CN103022099A IGBT (insulated gate bipolar transistor) collector structure and production method thereof |
| 04/03/2013 | CN103022098A Semiconductor device |
| 04/03/2013 | CN103022097A Grooved gate power device and manufacturing method thereof |
| 04/03/2013 | CN103022096A Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure |
| 04/03/2013 | CN103022095A Semiconductor device having lateral element |
| 04/03/2013 | CN103022094A Semiconductor device and method for manufacturing same |
| 04/03/2013 | CN103022093A Nanoscale silicon germanium material on insulator and preparation method thereof |
| 04/03/2013 | CN103022092A 半导体装置 Semiconductor device |
| 04/03/2013 | CN103022091A Lateral PNP bipolar transistor with narrow trench emitter |
| 04/03/2013 | CN103022090A High-efficiency high-voltage-resistant Schottky chip |
| 04/03/2013 | CN103022089A Reverse conducting type insulated gate bipolar transistor without snapback effect |
| 04/03/2013 | CN103022088A Semiconductor device having trench structure and method of manufacturing the same |
| 04/03/2013 | CN103022087A Semiconductor chip and production method thereof |
| 04/03/2013 | CN103022086A Semiconductor chip and manufacturing method thereof |
| 04/03/2013 | CN103022085A Semiconductor chip with ultra-junction structure and manufacturing method thereof |
| 04/03/2013 | CN103022084A Field effect transistor and manufacturing method thereof |
| 04/03/2013 | CN103022083A Array substrate, display device and preparing method of array substrate |
| 04/03/2013 | CN103022077A OLED (organic light-emitting diode) device containing oxide film transistor |
| 04/03/2013 | CN103022054A SOI (silicon-on-insulator) radio-frequency device and SOI substrate |
| 04/03/2013 | CN103022053A Display device, semiconductor device and method for manufacturing semiconductor device |
| 04/03/2013 | CN103022050A Display panel and manufacturing method thereof |
| 04/03/2013 | CN103022046A Non-volatile memory with P+ single polycrystal architecture and compatible with CMOS (complementary metal oxide semiconductor) process and preparation method of non-volatile memory |
| 04/03/2013 | CN103022041A SONOS (silicon-oxide-nitride-oxide-silicon) non-volatile memory |
| 04/03/2013 | CN103022031A Array substrate and manufacturing method thereof as well as display device |
| 04/03/2013 | CN103021951A Flash memory and manufacturing method thereof as well as formation method of grids in different thicknesses |
| 04/03/2013 | CN103021949A Replacement of gate semiconductor device |
| 04/03/2013 | CN103021944A TFT (thin-film transistor) array substrate, manufacturing method of TFT array substrate, and display device with TFT array substrate |
| 04/03/2013 | CN103021865A Method for manufacturing metal silicide thin film and ultra-shallow junction and semiconductor device |
| 04/03/2013 | CN103021864A Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof |
| 04/03/2013 | CN103021860A Trench transistor |
| 04/03/2013 | CN103021858A Power MOS (Metal Oxide Semiconductor) transistor device with low on resistance and preparation method thereof |
| 04/03/2013 | CN103021856A Method for forming semiconductor structure with super junctions and semiconductor structure |
| 04/03/2013 | CN103021854A Method for manufacturing fin type field effect transistor and semiconductor structure formed by fin type field effect transistor |
| 04/03/2013 | CN103021853A Method for processing semiconductor device and semiconductor device |
| 04/03/2013 | CN103021851A Preparation method of multi-grid-electrode field effect transistor |
| 04/03/2013 | CN103021850A Semiconductor structure and manufacturing method thereof |