| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/25/2013 | US20130099229 Semiconductor Device, RFID Tag Using the Same and Display Device |
| 04/25/2013 | US20130099228 Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel |
| 04/25/2013 | US20130099227 Oxide semiconductor, thin film transistor, and display device |
| 04/25/2013 | US20130099211 Devices having high dielectric constant, ionically-polarizable materials |
| 04/25/2013 | US20130099204 Carbon nanotube transistor employing embedded electrodes |
| 04/25/2013 | US20130099202 SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N |
| 04/25/2013 | US20130099200 Layer assembly |
| 04/25/2013 | US20130099197 Doped graphene electronic materials |
| 04/25/2013 | US20130099196 Semiconductor-Graphene Hybrids Formed Using Solution Growth |
| 04/25/2013 | US20130099195 Direct Formation of Graphene on Semiconductor Substrates |
| 04/25/2013 | US20130099194 Method Of Making Graphene Layers, And Articles Made Thereby |
| 04/25/2013 | US20130098444 Polycrystalline silicon thin-film forming method, polycrystalline silicon thin-film substrate, silicon thin-film solar cell, and silicon thin-film transistor device |
| 04/25/2013 | DE112011101964T5 Halbleitereinrichtung und Verfahren zum Herstellen der Halbleitereinrichtung A semiconductor device and method of manufacturing the semiconductor device |
| 04/25/2013 | DE112011101442T5 Halbleitervorrichtung Semiconductor device |
| 04/25/2013 | DE112011101410T5 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device |
| 04/25/2013 | DE112010005271T5 Halbleitervorrichtungen Semiconductor devices |
| 04/25/2013 | DE102012204516A1 FinFET-Vorrichtung und Herstellungsverfahren für dieselbe FinFET device and manufacturing method for the same |
| 04/25/2013 | DE102012020481A1 Gruppe III-Nitrid Metall-Isolator-Halbleiter Heterostruktur-Feldeffekttransistoren Group III nitride-metal-insulator-semiconductor heterostructure field-effect transistors |
| 04/25/2013 | DE102011085114A1 Dünnfilmtransistor Thin film transistor |
| 04/25/2013 | DE10038425B4 Laminiertes Halbleiter-Keramikbauelement und Herstellungsverfahren für das laminierte Halbleiter-Keramikbauelement A laminated semiconductor ceramic device, and manufacturing method of the laminated semiconductor ceramic device |
| 04/24/2013 | EP2584608A2 Coated nanoparticles and method of manufacturing the same |
| 04/24/2013 | EP2584606A2 Dynamic memory cell provided with a field-effect transistor with vertical subthreshold slope |
| 04/24/2013 | EP2584595A1 Silicon carbide semiconductor device manufacturing method |
| 04/24/2013 | EP2584594A1 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device |
| 04/24/2013 | EP2584592A1 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device |
| 04/24/2013 | EP2583325A1 Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device |
| 04/24/2013 | EP2583304A2 Surface passivation by quantum exclusion using multiple layers |
| 04/24/2013 | EP2582655A1 Leaving substituent-containing compound, organic semiconductor material formed therefrom, organic electronic device, organic thin-film transistor and display device using the organic semiconductor material, method for producing film-like product, pi-electron conjugated compound and method for producing the pi-electron conjugated compound |
| 04/24/2013 | EP1847850B1 Hydrophone assembly |
| 04/24/2013 | CN202905724U Fast recovery diode |
| 04/24/2013 | CN202905723U 半导体器件和可编程的非易失性存储设备 Semiconductor devices and programmable non-volatile memory device |
| 04/24/2013 | CN202905722U TFT with light doped drain |
| 04/24/2013 | CN202905721U Film transistor, array substrate and display device |
| 04/24/2013 | CN202905720U Multi-grid high voltage field effect transistor |
| 04/24/2013 | CN202905719U Field transistor structure |
| 04/24/2013 | CN202905718U Silicon wafer with polycrystalline silicon gathering structure |
| 04/24/2013 | CN202905717U Monocrystalline silicon piece including oxide layer used for making chip |
| 04/24/2013 | CN103069717A 半导体集成电路 The semiconductor integrated circuit |
| 04/24/2013 | CN103069571A Silicon carbide semiconductor element and method for producing same |
| 04/24/2013 | CN103069564A Magnetoresistive element and magnetic random-access memory |
| 04/24/2013 | CN103069554A Method and device for forming organic thin film, and method for manufacturing of organic device |
| 04/24/2013 | CN103069553A Semiconductor substrate, insulated gate field effect transistor, and method for manufacturing semiconductor substrate |
| 04/24/2013 | CN103069552A Mos transistors including sion gate dielectric with enhanced nitrogen concentration at its sidewalls |
| 04/24/2013 | CN103069334A Substrate for display device and method for manufacturing same, and display device |
| 04/24/2013 | CN103069042A Al alloy film, wiring structure having Al alloy film, and sputtering target used in producing Al alloy film |
| 04/24/2013 | CN103066131A Multi-bit nonvolatile memory and operation method thereof |
| 04/24/2013 | CN103066130A Semiconductor device, display module and electronic apparatus |
| 04/24/2013 | CN103066129A Thin film transistor growth technology |
| 04/24/2013 | CN103066128A Semiconductor device and method for manufacturing same |
| 04/24/2013 | CN103066127A Semiconductor devices and methods |
| 04/24/2013 | CN103066126A 半导体装置 Semiconductor device |
| 04/24/2013 | CN103066125A Superjunction semiconductor device |
| 04/24/2013 | CN103066124A Semiconductor device with multiple stress structures and method of forming the same |
| 04/24/2013 | CN103066123A FinFET device and method of manufacturing same |
| 04/24/2013 | CN103066122A Metal-oxide-semiconductor field effect transistor (MOSFET) and manufacturing method thereof |
| 04/24/2013 | CN103066121A Transistor and method of manufacturing same |
| 04/24/2013 | CN103066120A Collector back side structure of insulated gate type bipolar transistor |
| 04/24/2013 | CN103066119A Germanium silicon heterojunction bipolar transistor and manufacturing method thereof |
| 04/24/2013 | CN103066118A Vertical parasitic PNP transistor and manufacturing method thereof in germanium silicon heterojunction bipolar transistor (HBT) technology |
| 04/24/2013 | CN103066117A Half self alignment bipolar transistor and manufacturing method thereof |
| 04/24/2013 | CN103066116A Bipolar transistor device and manufacturing method thereof |
| 04/24/2013 | CN103066115A Vertical parasitic type PNP triode and manufacture method |
| 04/24/2013 | CN103066114A Positive-negative-positive transistor integrated with germanium-silicon hetero-junction negative-positive-negative transistor |
| 04/24/2013 | CN103066113A 液晶显示装置 The liquid crystal display device |
| 04/24/2013 | CN103066112A Semiconductor device and manufacturing method thereof |
| 04/24/2013 | CN103066111A Transistor with self-aligned channel width |
| 04/24/2013 | CN103066110A Super junction transistor and fabrication method thereof |
| 04/24/2013 | CN103066109A Semiconductor structure and formation method thereof |
| 04/24/2013 | CN103066108A Preparation method and application of ferrous acid terbium positive-negative (p-n) heterostructure |
| 04/24/2013 | CN103066107A Parallel connection type graphene nanometer stripe structure |
| 04/24/2013 | CN103066106A Transistor isolation structure and manufacture method thereof |
| 04/24/2013 | CN103066105A Semiconductor power device with terminal protection structure |
| 04/24/2013 | CN103066104A Semiconductor power device with terminal protection structure |
| 04/24/2013 | CN103066103A Substrate breakdown voltage improvement method for group III-nitride on silicon substrate |
| 04/24/2013 | CN103066102A Groove-type power semiconductor device for boosting breakdown voltage and manufacturing method thereof |
| 04/24/2013 | CN103066101A Germanium silicon heterojunction bipolar transistor (HBT) component and manufacturing method thereof |
| 04/24/2013 | CN103066077A HIMOS FLASH memory cell structure and manufacturing method thereof |
| 04/24/2013 | CN103066074A Double capture-silicon oxide nitride oxide semiconductor (SONOS) memorizer with double layer dielectric charge trapping layer and preparation method thereof |
| 04/24/2013 | CN103066073A Metal gate structure of semiconductor device |
| 04/24/2013 | CN103066072A Positive-intrinsic-negative (PIN) diode array structure and manufacturing method thereof |
| 04/24/2013 | CN103066059A Semiconductor structure having through substrate via (TSV) and method for forming |
| 04/24/2013 | CN103066057A Vertical parasitic type precision navigation processor (PNP) device and manufacturing method thereof in bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) technology |
| 04/24/2013 | CN103066056A Vertical parasitic type precision navigation processor (PNP) device and manufacturing method thereof in bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) technology |
| 04/24/2013 | CN103066021A Semiconductor device having metal gate electrode and method of fabrication thereof |
| 04/24/2013 | CN103066020A Complementary metal-oxide-semiconductor transistor (CMOS) and manufacturing method thereof, and P-channel metal oxide semiconductor transistor (PMOS) and manufacturing method thereof |
| 04/24/2013 | CN103066019A Complementary metal-oxide-semiconductor transistor (CMOS) and manufacturing method thereof, and N-channel metal oxide semiconductor field effect transistor (NMOS) and manufacturing method thereof |
| 04/24/2013 | CN103066010A Metal oxide semiconductor (MOS) transistor and manufacturing method thereof |
| 04/24/2013 | CN103065972A Metallic oxide semiconductor film and preparation method and application thereof |
| 04/24/2013 | CN103065969A Semiconductor device and method for manufacturing same |
| 04/24/2013 | CN103065967A 高电压装置 High voltage equipment |
| 04/24/2013 | CN103065963A Fin type transistor and formation method thereof |
| 04/24/2013 | CN103065952A Nonvolatile memory device and method of manufacturing thereof |
| 04/24/2013 | CN102347354B Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof |
| 04/24/2013 | CN102339833B High-reliability split-gate nonvolatile memory structure with high-speed low-voltage operation function |
| 04/24/2013 | CN102332467B Controlled silicon structure with adjustable maintaining voltage |
| 04/24/2013 | CN102315271B Semiconductor device and making method thereof |
| 04/24/2013 | CN102315270B Power semiconductor structure with field effect rectifier element and making method for power semiconductor structure |
| 04/24/2013 | CN102315247B Super-junction semiconductor device with groove-type terminal structure |
| 04/24/2013 | CN102214579B Method of fabricating semiconductor device and semiconductor element |
| 04/24/2013 | CN102208450B Isolation structure of high-voltage driving circuit |