| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/30/2004 | US20040188709 Semiconductor alignment aid |
| 09/30/2004 | US20040188708 Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor |
| 09/30/2004 | US20040188707 Semiconductor device and a method of manufacturing the same |
| 09/30/2004 | US20040188705 Semiconductor diodes with fin structure |
| 09/30/2004 | US20040188693 Semiconductor device and method for fabricating the same |
| 09/30/2004 | US20040188692 Semiconductor device and manufacturing method thereof |
| 09/30/2004 | US20040188688 Semiconductor device and method for manufacturing the same |
| 09/30/2004 | US20040188685 Thin film transistor and fabrication method thereof |
| 09/30/2004 | US20040188684 Selective deposition of smooth silicon, germanium, and silicon-germanium alloy epitaxial films |
| 09/30/2004 | US20040188683 Thin film transistor substrate and manufacturing method thereof |
| 09/30/2004 | US20040188682 Thin-film transistor, thin-film transistor sheet and their manufacturing method |
| 09/30/2004 | US20040188672 Solutions of organic semiconductors |
| 09/30/2004 | US20040188671 Compound display |
| 09/30/2004 | US20040188670 Increasing stress-enhanced drive current in a MOS transistor |
| 09/30/2004 | US20040187592 Physical quantity sensor having protrusion and method for manufacturing the same |
| 09/30/2004 | US20040187575 Semiconductor dynamic sensor, and methods of transport and collet suction for the same |
| 09/30/2004 | US20040187573 Semiconductor dynamic quantity sensor |
| 09/30/2004 | US20040187571 Capacitive-type semiconductor sensor |
| 09/30/2004 | DE4024728B4 MOS-Halbleitereinrichtung und Verfahren zu ihrer Herstellung MOS semiconductor device and process for their preparation |
| 09/30/2004 | DE10351976A1 Semiconductor device for motor vehicle, has surge protection circuit including diode whose pn-junction is arranged at a predetermined distant from field oxide film formed on substrate |
| 09/30/2004 | DE10351609A1 Halbleiterbauelement und dessen Herstellungsverfahren A semiconductor device and its manufacturing method |
| 09/30/2004 | DE10351511A1 Halbleitervorrichtung Semiconductor device |
| 09/30/2004 | DE10310842A1 Elektronisches Bauteil mit Halbleiterchip und Kunststoffgehäuse und Verfahren zur Herstellung desselben The same electronic device having the semiconductor chip and the plastic housing and methods for preparing |
| 09/30/2004 | DE10310573A1 Nicht-flüchtige, integrierte Speicherzelle und Verfahren zum Einschreiben oder Auslesen einer Information in die / aus der Speicherzelle Non-volatile, integrated memory cell and method of writing or reading an information to / from the memory cell |
| 09/30/2004 | DE10310554A1 Semiconductor component, especially an LDMOS transistor for use as a large signal amplifier in a base station, has separate planar and non-planar metalizing planes connected via a through contact |
| 09/30/2004 | DE10310552A1 LDMOSFET for large signal amplifier, e.g. transmitter PA, has opposite polarity region in substrate adjoining the drain |
| 09/30/2004 | DE10309613A1 LDMOS high frequency transistor, has channel and resurf zone arranged in well under gate electrode, between source zone and drain zone |
| 09/30/2004 | DE10303771B3 Production of a field effect transistor comprises forming an origin web made from semiconductor material on a substrate using lithography, forming a gate dielectric layer on the longitudinal sides of the web, and further processing |
| 09/30/2004 | DE10258467B3 Power semiconductor component used as a power transistor has a field electrode formed in the lower region of the trenches away from the upper surface of the semiconductor body |
| 09/30/2004 | DE102004013583A1 Sensor für eine physikalische Grösse mit einem Balken Sensor for a physical quantity with a bar |
| 09/30/2004 | CA2519893A1 Electrical connections in substrates |
| 09/29/2004 | EP1463122A2 Semiconductor diode and manufacturing mehod thereof |
| 09/29/2004 | EP1463121A1 Semiconductor device and production method therefor |
| 09/29/2004 | EP1463116A2 Method for fabricating self-assembling microstructures |
| 09/29/2004 | EP1463105A2 Semiconductor device and method of manufacturing the same by a transfer technique |
| 09/29/2004 | EP1463102A2 Method of manufacturing a transistor with metal gate and corresponding transistor |
| 09/29/2004 | EP1463101A2 Semiconductor device fabrication methods for inhibiting carbon out-diffusion from the semiconductor wafer |
| 09/29/2004 | EP1463098A2 Method of forming a laminated structure of polysilicon and tungsten silicide |
| 09/29/2004 | EP1462846A2 Active matrix LCD having non-straight data lines |
| 09/29/2004 | EP1462422A2 Anodic bonding method and its use to manufacture an electronic device |
| 09/29/2004 | EP1461833A1 Matrix-addressable apparatus with one or more memory devices |
| 09/29/2004 | EP1461832A1 Organic semiconductor and method |
| 09/29/2004 | EP1461827A1 Method for improving the efficiency of epitaxially produced quantum dot semiconductor components |
| 09/29/2004 | EP1461816A2 Mems device having contact and standoff bumps and related methods |
| 09/29/2004 | EP1169650B1 Different sacrificial layer thickness under fixed and movable electrodes (capacitive acceleration sensor) |
| 09/29/2004 | EP1002334B1 Method for configuring semiconductors with high precision, good homogeneity and reproducibility |
| 09/29/2004 | EP0860028B1 Varactor with electrostatic barrier |
| 09/29/2004 | EP0853337B1 Method for manufacturing semiconductor device |
| 09/29/2004 | CN2645241Y High voltage P type MOS tube |
| 09/29/2004 | CN2645240Y High power thyristor with reclaimable plastic cases |
| 09/29/2004 | CN1533609A 半导体装置 Semiconductor device |
| 09/29/2004 | CN1533608A Quantum device |
| 09/29/2004 | CN1533607A Circuit fabrication method |
| 09/29/2004 | CN1533591A Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method |
| 09/29/2004 | CN1532949A Silicon overvoltage protective tube |
| 09/29/2004 | CN1532948A Finned semiconductor diode structure |
| 09/29/2004 | CN1532947A Thin film semiconductor semiconductor device and method for producing thin film transistor |
| 09/29/2004 | CN1532946A Thin film transistor assembly with substrate contact |
| 09/29/2004 | CN1532945A Thin film transistor and its producing method and display device |
| 09/29/2004 | CN1532944A 立式mos晶体管 Vertical mos transistors |
| 09/29/2004 | CN1532943A Silicon carbide semiconductor device and its producting method |
| 09/29/2004 | CN1532941A Solid state imaging device and its producing method |
| 09/29/2004 | CN1532937A Semiconductor memory matrix of flating gate memory unit |
| 09/29/2004 | CN1532912A Stress leading space layer |
| 09/29/2004 | CN1532617A Liquid crystal display device and its producing method |
| 09/29/2004 | CN1532600A Base board and its producing method, base board for photoelectric device photoelectric device and electronic device |
| 09/29/2004 | CN1532592A Semiconductor device, photoelectric device and electronic device |
| 09/29/2004 | CN1532307A Anodizing processing device |
| 09/29/2004 | CN1532058A MOS FET transistor used for high dengity assembly and its its producing method |
| 09/29/2004 | CN1169233C Electrooptics device, mfg. method and electronic apparatus thereof |
| 09/29/2004 | CN1169227C Diode capable of regulating breakdown valtage without increasing parasitic capacitance and manufacturing method thereof |
| 09/29/2004 | CN1169225C Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| 09/29/2004 | CN1169224C Nonvolatile PMOS two transistor memory cell and array |
| 09/29/2004 | CN1169200C Manufacture of FET and memory unit in DRAM |
| 09/29/2004 | CN1169193C Voltage-cycling recovery of process-damaged ferroelectric films |
| 09/29/2004 | CN1169015C Thin film device having coating film, liquid crystal panel, and method of manufacturing the thin film device |
| 09/29/2004 | CN1168978C Sensor for detecting free fluorine of bacterial spot on surface of single tooth |
| 09/28/2004 | US6798683 Pattern layout of transfer transistors employed in row decoder |
| 09/28/2004 | US6798641 Low cost, high density diffusion diode-capacitor |
| 09/28/2004 | US6798498 Apparatus for evaluating polysilicon film |
| 09/28/2004 | US6798474 LCD with light shielding on same insulator as pixel and extending beyond sealant inner surface |
| 09/28/2004 | US6798466 Liquid crystal display device and method for fabricating the same |
| 09/28/2004 | US6798442 Thin film transistor array panel for liquid crystal display and method of manufacturing the same |
| 09/28/2004 | US6798405 Thin film transistor for supplying power to element to be driven |
| 09/28/2004 | US6798052 Fexible electronic device |
| 09/28/2004 | US6798042 Pin diode and method for fabricating the diode |
| 09/28/2004 | US6798041 Method and system for providing a power lateral PNP transistor using a buried power buss |
| 09/28/2004 | US6798040 Power semiconductor switch |
| 09/28/2004 | US6798034 Technique for suppression of edge current in semiconductor devices |
| 09/28/2004 | US6798032 Metal film pattern and manufacturing method thereof |
| 09/28/2004 | US6798028 Field effect transistor with reduced gate delay and method of fabricating the same |
| 09/28/2004 | US6798026 Conductor layer nitridation |
| 09/28/2004 | US6798025 Insulated gate bipolar transistor |
| 09/28/2004 | US6798022 Semiconductor device with improved protection from electrostatic discharge |
| 09/28/2004 | US6798021 Transistor having a graded active layer and an SOI based capacitor |
| 09/28/2004 | US6798020 High-voltage lateral transistor with a multi-layered extended drain structure |
| 09/28/2004 | US6798019 IGBT with channel resistors |
| 09/28/2004 | US6798018 Semiconductor device having MOSFET of trench structure and method for fabricating the same |
| 09/28/2004 | US6798017 Vertical dual gate field effect transistor |
| 09/28/2004 | US6798016 Trench MOS device and process for radhard device |