H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2004
10/07/2004	US20040197951 Membrane IC fabrication
10/07/2004	US20040197949 Anodic bonding method and electronic device having anodic bonding structure
10/07/2004	US20040197943 Nanosilicon light-emitting element and manufacturing method thereof
10/07/2004	US20040197937 Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film
10/07/2004	US20040197255 for blue, green, red, and infrared emission; uniformity; formed from electrochemical etch
10/07/2004	US20040196720 [flash memory with self-aligned split gate and methods for fabricating and for operating the same]
10/07/2004	US20040196695 Nonvolatile memory device and semiconductor device
10/07/2004	US20040196694 Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
10/07/2004	US20040196685 Transistor and semiconductor memory using the same
10/07/2004	US20040196397 Compact pixel reset circuits using reversed current readout
10/07/2004	US20040196220 Light-emitting apparatus and method of manufacturing light-emitting apparatus
10/07/2004	US20040195966 Method of providing a layer including a metal or silicon or germanium and oxygen on a surface
10/07/2004	US20040195704 Alignment marks and manufacturing method for the same
10/07/2004	US20040195689 Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window
10/07/2004	US20040195688 Custom electrodes for molecular memory and logic devices
10/07/2004	US20040195655 Bipolar transistor and method for fabricating the same
10/07/2004	US20040195651 Center-tap transformers in integrated circuits
10/07/2004	US20040195645 Bipolar junction transistor and fabricating method
10/07/2004	US20040195644 Ballast resistors for transistor devices
10/07/2004	US20040195643 Variable reactor (varactor) with engineered capacitance-voltage characteristics
10/07/2004	US20040195636 Semiconductor device and manufacturing method thereof
10/07/2004	US20040195635 Semiconductor device and method for manufacturing the same
10/07/2004	US20040195634 Semiconductor device with constricted current passage
10/07/2004	US20040195633 Gate edge diode leakage reduction
10/07/2004	US20040195632 Semiconductor device and method of manufacturing the same
10/07/2004	US20040195631 Gate edge diode leakage reduction
10/07/2004	US20040195630 ESD protection device and method of making the same
10/07/2004	US20040195628 Method of forming an N channel and P channel finfet device on the same semiconductor substrate
10/07/2004	US20040195627 Strained channel FinFET
10/07/2004	US20040195624 Strained silicon fin field effect transistor
10/07/2004	US20040195623 Strained channel on insulator device
10/07/2004	US20040195621 On chip decap trench capacitor (dtc) for ultra high performance silicon on insulator (soi) systems microprocessors
10/07/2004	US20040195620 Termination structure of DMOS device
10/07/2004	US20040195619 Vertical type power MOSFET having trenched gate structure
10/07/2004	US20040195618 Insulated gate semiconductor device
10/07/2004	US20040195617 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
10/07/2004	US20040195616 Floating gates having improved coupling ratios and fabrication method thereof
10/07/2004	US20040195615 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
10/07/2004	US20040195614 A non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation
10/07/2004	US20040195612 Method of creating deep trench capacitor using a p+ metal electrode
10/07/2004	US20040195610 Fin semiconductor device and method for fabricating the same
10/07/2004	US20040195608 Recess transistor (TR) gate to obtain large self-aligned contact (SAC) open margin and method of forming the same
10/07/2004	US20040195602 Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
10/07/2004	US20040195597 Heterojunction bipolar transistor containing at least one silicon carbide layer
10/07/2004	US20040195595 Passivation planarization
10/07/2004	US20040195592 Two-transistor pixel with buried reset channel and method of formation
10/07/2004	US20040195590 Semiconductor device and manufacturing method thereof
10/07/2004	US20040195588 Semiconductor device
10/07/2004	US20040195587 Elimination of implant damage during manufacture of HBT
10/07/2004	US20040195586 Semiconductor device and method of fabricating same
10/07/2004	US20040195585 Multi-gate heterostructured field effect transistor
10/07/2004	US20040195584 Test insert with electrostatic discharge structures and associated methods
10/07/2004	US20040195582 Semiconductor device with guard ring for preventing water from entering circuit region from outside
10/07/2004	US20040195575 Quantum device
10/07/2004	US20040195572 Semiconductor device
10/07/2004	US20040195571 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof
10/07/2004	US20040195570 Flat panel display with thin film transistor
10/07/2004	US20040195569 Device manufacturing method and device, electro-optic device, and electronic equipment
10/07/2004	US20040195568 Thin film transistor substrate and method for manufacturing the same
10/07/2004	US20040195566 Polythiophenes and devices thereof
10/07/2004	US20040195565 Low-forward-voltage molecular rectifier
10/07/2004	US20040195563 Electrical detection of selected species
10/07/2004	US20040195562 Super lattice modification of overlying transistor
10/07/2004	US20040195509 QWIP with tunable spectral response
10/07/2004	US20040195094 used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process
10/07/2004	DE10359214A1 Verfahren zur Schaltkreissimulation eines Transistoren enthaltenden Schaltkreises A process for circuit simulation of a circuit containing transistors
10/07/2004	DE10313738A1 Capacitive micro-mechanical sensor for detecting pressure, has separately processed components with semiconductor material, electrodes and a steel membrane
10/07/2004	DE10311059A1 Process for preparation of a semiconductor structure with troughs arranged in regions of different electrical conductivity useful in semiconductor technology, especially in miniaturizing processes
10/07/2004	DE102004013122A1 Halbleitersensor eines kapazitiven Typs Semiconductor sensor of a capacitive type
10/06/2004	EP1465260A2 High-voltage field-effect transistor
10/06/2004	EP1465257A1 Display apparatus
10/06/2004	EP1465201A2 Producing conductive layers
10/06/2004	EP1464953A1 Biosensor comprising an organic field effect transistor and method for the fabrication of the sensor
10/06/2004	EP1464615A2 Method for protecting encapsulated sensor structures using stack packaging
10/06/2004	EP1464088A1 Electroluminescent device
10/06/2004	EP1464087A2 Rectifier of thermaly moving electrons and method for converting thermal energy into electric energy by using the same
10/06/2004	EP1464086A2 Field effect transistor having periodically doped channel
10/06/2004	EP1464085A1 Negative differential resistance field effect transistor (ndr-fet) & circuits using the same
10/06/2004	EP1464079A1 Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors
10/06/2004	EP1464077A2 Method for producing a capacitor
10/06/2004	EP1464074A2 Method for limiting divot formation in post shallow trench isolation processes
10/06/2004	EP1463853A1 Controlled growth of single-wall carbon nanotubes
10/06/2004	EP1463628A2 Nanocrystal structures
10/06/2004	CN1535481A Process for making high voltage NPN bipolar device with improved AC performance
10/06/2004	CN1535480A Semiconductor structure comprising electrostatic discharge (ESD) protection device
10/06/2004	CN1535478A Method and structure for buried circuits and devices
10/06/2004	CN1535096A Lighting assembly and lighting display device
10/06/2004	CN1534797A Semiconductor device and mfg.method thereof
10/06/2004	CN1534796A Most
10/06/2004	CN1534795A Semiconductor device and mfg. method thereof
10/06/2004	CN1534794A 半导体元件 Semiconductor components
10/06/2004	CN1534789A Nonvolatibity storage device and its manufacturing method
10/06/2004	CN1534788A Trough transistor (TR) grid capable of realizing large self aligning contact (SAL) split allowance and its shaping method
10/06/2004	CN1534779A Semiconductor device and mfg. method thereof
10/06/2004	CN1534769A Method of manufacturing bi ONO type SONOS storage using reverse direction self-aligning process
10/06/2004	CN1534768A Semiconductor device and mfg. method thereof
10/06/2004	CN1534765A Laying-out designing device, method and program for semiconductor elements
10/06/2004	CN1534758A Semiconductor device mfg. method
10/06/2004	CN1534749A Semiconductor device having epitaxial C49 titanium silicide (TiSi2)layer and its manufacturing method
10/06/2004	CN1534745A Structure of multi grid transistor and its manufacturing method

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