Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2004
09/16/2004US20040178451 Semiconductor device and method of manufacturing the same
09/16/2004US20040178450 Silicon on insulator device having trench isolation layer and method for manufacturing the same
09/16/2004US20040178449 Silicon-on-insulator comprising integrated circuitry and methods of forming silicon-on-insulator circuitry
09/16/2004US20040178446 Method of forming asymmetrical polysilicon thin film transistor
09/16/2004US20040178445 Semiconductor device and method of manufacturing the device
09/16/2004US20040178444 Double diffused field effect transistor having reduced on-resistance
09/16/2004US20040178443 LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistance
09/16/2004US20040178442 Short channel insulated-gate static induction transistor and method om manufacturing the same
09/16/2004US20040178441 Insulated gate type semiconductor device and method of manufacturing the same
09/16/2004US20040178440 Semiconductor device and process for producing the same
09/16/2004US20040178439 Doped aluminum oxide dielectrics
09/16/2004US20040178438 Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor
09/16/2004US20040178437 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures
09/16/2004US20040178434 Semiconductor device
09/16/2004US20040178432 Methods of forming transistor devices and capacitor constructions
09/16/2004US20040178429 Thin film transistor and method for manufacturing same
09/16/2004US20040178428 Organic device including semiconducting layer aligned according to microgrooves of photoresist layer
09/16/2004US20040178427 A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof
09/16/2004US20040178422 Heterostructure field effect transistor
09/16/2004US20040178421 Voltage-switchable and-tunable and environment-insensitive multi-color superlattice infrared photodetector
09/16/2004US20040178420 Complex semiconductor device and electric power conversion apparatus using it
09/16/2004US20040178416 Self-aligned rear electrode for diode array element
09/16/2004US20040178413 Semiconductor device and method for producing the same
09/16/2004US20040178412 Thin film transistor and method of manufacturing the same and display apparatus using the transistor
09/16/2004US20040178411 Substrate for display, method of manufacturing the same and display having the same
09/16/2004US20040178410 Flat panel display with thin film transistor (TFT)
09/16/2004US20040178409 Thin film transistor panel for liquid crystal display
09/16/2004US20040178408 Polymer dopants
09/16/2004US20040178406 Dual strain-state SiGe layers for microelectronics
09/16/2004US20040178403 Field effect chalcogenide devices
09/16/2004US20040178174 Dual gate nitride process
09/16/2004US20040177879 solar cells; organic electrically conducting agent exhibits a melting temperature TM which is lower than the operation temperature of the photoelectric conversion device
09/16/2004US20040177706 Semiconductor mechanical quantity sensor
09/16/2004US20040177699 Semiconductor pressure sensor
09/16/2004DE19838106B4 Verfahren zur Verbesserung der Wärmebeständigkeit von Wolframsilicid A process for improving the heat resistance of tungsten silicide
09/16/2004DE19711268B4 Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium Chemical vapor deposition method using inductively coupled plasma, using the method for manufacturing thin film transistors and thin films produced by the process of amorphous silicon
09/16/2004DE19548489B4 Eingangs/Ausgangsschutzschaltung Input / output protection circuit
09/16/2004DE10351608A1 Beschleunigungssensor, der auf einer Fläche eines Halbleitersubstrats ausgebildet ist Acceleration sensor which is formed on a surface of a semiconductor substrate
09/16/2004DE10308870A1 Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung Bipolar transistor with an improved base-emitter junction and methods for preparing
09/16/2004DE10308313A1 Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren Semiconductor diode, electronic component, voltage source inverter and control method
09/16/2004DE10297292T5 Verbesserung der Auslösung eines ESD-NMOS durch die Verwendung einer N-Unterschicht Improving the triggering of an NMOS ESD through the use of a N-undercoat layer
09/16/2004DE10245091B4 Verfahren zur Herstellung einer dünnen Halbleiterbauelementstruktur A process for producing a thin semiconductor device structure
09/16/2004DE102004010670A1 Halbleiterdrucksensor mit einem Diaphragma A semiconductor pressure sensor comprising a diaphragm
09/16/2004DE102004010127A1 Halbleitervorrichtung mit einer Grabengatestruktur und Verfahren zum Herstellen dergleichen Like semiconductor device with a grave gate structure and methods for preparing
09/16/2004DE102004005502A1 Metal-oxide semiconductor transistor production comprises doping epitaxial layer provided on substrate with impurities using gate electrode as mask to form source/drain extension regions in epitaxial layer proximal to gate dielectric layer
09/15/2004EP1458033A2 Semiconductor protection element, semiconductor device comprising the same and corresponding manufacturing methods
09/15/2004EP1458032A1 Transistor and semiconductor memory comprising it
09/15/2004EP1458031A2 Hybrid ferromagnet/semiconductor spin device and fabrication method thereof
09/15/2004EP1458030A2 Novel and conductive elements for thin film transistors used in a flat panel display
09/15/2004EP1458029A2 Novel conductive elements for thin film transistors used in a flat panel display
09/15/2004EP1456892A1 Electrochemical device
09/15/2004EP1456890A1 Zener diode, zener diode circuit and method for production of a zener diode
09/15/2004EP1456889A1 Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors
09/15/2004EP1456888A1 Electrically programmed mos transistor source/drain series resistance
09/15/2004EP1456887A1 Circuit fabrication method
09/15/2004EP1456885A2 Monos device having buried metal silicide bit line
09/15/2004EP1456883A1 Method of forming ultra shallow junctions
09/15/2004EP1456877A1 Composite spacer liner for improved transistor performance
09/15/2004EP1456876A2 Memory cell with a trench transistor
09/15/2004EP1456874A1 Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
09/15/2004EP1456636A1 Fet sensor with a specially configured gate electrode for the highly sensitive detection of analytes
09/15/2004EP1393378B1 Method for producing a stepped structure on a substrate
09/15/2004CN1529912A Trench Schottky barrier rectifier and method of making same
09/15/2004CN1529911A Dynamic memory based on single electron stroage
09/15/2004CN1529907A Method for making shallow junction semiconductor devices
09/15/2004CN1529906A Method for enhanced oxidation of MOS transistor gate corners
09/15/2004CN1529881A 有源矩阵显示器 The active matrix display
09/15/2004CN1529363A Transverse low-side high-voltage device and high-side high-voltage device
09/15/2004CN1529350A Method for producing film field-effect transistor
09/15/2004CN1529348A Gunn diode fabricating method and gunn oscillator
09/15/2004CN1529344A Method for producing film device
09/15/2004CN1529319A Nonvolatile semiconductor memory
09/15/2004CN1529318A Nonvolatile semiconductor memory
09/15/2004CN1167146C Semiconducting polymer field effect transistor
09/15/2004CN1167132C Circuit and method for recucing ghost double-pole effect during static discharge
09/15/2004CN1167130C Operation process of semiconductor device
09/15/2004CN1167114C Film transistor having polycrystal active layer and manufacture thereof
09/15/2004CN1167112C Integrated circuit chip and mfg. method thereof
09/14/2004USRE38582 Semiconductor diode with suppression of auger generation processes
09/14/2004US6791881 Semiconductor device
09/14/2004US6791872 Method and article for concentrating fields at sense layers
09/14/2004US6791857 Method and article for concentrating fields at sense layers
09/14/2004US6791810 Protection circuit of field effect transistor and semiconductor device
09/14/2004US6791808 Clipping device with a negative resistance
09/14/2004US6791633 Liquid crystal display and manufacturing method of same
09/14/2004US6791632 Protection circuit and method from electrostatic discharge of TFT-LCD
09/14/2004US6791631 Pixel structure of thin-film transistor liquid crystal display including storage capacitor formed under signal line
09/14/2004US6791383 Reduced gate leakage current in thin gate dielectric CMOS integrated circuits
09/14/2004US6791197 Reducing layer separation and cracking in semiconductor devices
09/14/2004US6791161 Precision Zener diodes
09/14/2004US6791159 Optical module
09/14/2004US6791156 Semiconductor device and method for manufacturing it
09/14/2004US6791154 Integrated semiconductor circuit device having Schottky barrier diode
09/14/2004US6791153 Photo detector with passivation layer and antireflection layer made of the same material
09/14/2004US6791149 Diffusion barrier layer for semiconductor wafer fabrication
09/14/2004US6791148 Method and composite for decreasing charge leakage
09/14/2004US6791146 Silicon controlled rectifier structure with guard ring controlled circuit
09/14/2004US6791145 Semiconductor device formed by utilizing deformed pattern
09/14/2004US6791144 Thin film transistor and multilayer film structure and manufacturing method of same
09/14/2004US6791143 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through