| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/28/2004 | US6798015 Semiconductor device and method of manufacturing the same |
| 09/28/2004 | US6798013 Vertically integrated flash memory cell and method of fabricating a vertically integrated flash memory cell |
| 09/28/2004 | US6798012 Dual-bit double-polysilicon source-side injection flash EEPROM cell |
| 09/28/2004 | US6798011 Multi-terminal MOS varactor |
| 09/28/2004 | US6798007 Method of fabricating a semiconductor device having a non-volatile semiconductor memory and a capacitor |
| 09/28/2004 | US6798005 Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits |
| 09/28/2004 | US6798004 Magnetoresistive random access memory devices and methods for fabricating the same |
| 09/28/2004 | US6798002 Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of forming |
| 09/28/2004 | US6798000 Field effect transistor |
| 09/28/2004 | US6797996 Compound semiconductor device and method for fabricating the same |
| 09/28/2004 | US6797995 Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector |
| 09/28/2004 | US6797994 Double recessed transistor |
| 09/28/2004 | US6797992 Apparatus and method for fabricating a high reverse voltage semiconductor device |
| 09/28/2004 | US6797990 Boron phosphide-based semiconductor device and production method thereof |
| 09/28/2004 | US6797985 Active matrix organic light-emitting diode and manufacturing method thereof |
| 09/28/2004 | US6797982 Active matrix substrate and display device |
| 09/28/2004 | US6797961 X-ray detector and method of fabricating the same |
| 09/28/2004 | US6797899 Acceleration switch |
| 09/28/2004 | US6797651 Method for manufacturing polycrystalline semiconductor layers and thin-film transistors and laser annealing apparatus |
| 09/28/2004 | US6797650 Flash memory devices with oxynitride dielectric as the charge storage media |
| 09/28/2004 | US6797645 Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation |
| 09/28/2004 | US6797644 Method to reduce charge interface traps and channel hot carrier degradation |
| 09/28/2004 | US6797641 Gate oxide stabilization by means of germanium components in gate conductor |
| 09/28/2004 | US6797634 Method of conditioning an etching chamber and method of processing semiconductor substrate using the etching chamber |
| 09/28/2004 | US6797629 Method of manufacturing nano transistors |
| 09/28/2004 | US6797604 Method for manufacturing device substrate with metal back-gate and structure formed thereby |
| 09/28/2004 | US6797602 Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts |
| 09/28/2004 | US6797599 Gate structure and method |
| 09/28/2004 | US6797596 Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device |
| 09/28/2004 | US6797595 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
| 09/28/2004 | US6797594 Semiconductor device and method of manufacturing the same |
| 09/28/2004 | US6797590 DRAM cell structure capable of high integration and fabrication method thereof |
| 09/28/2004 | US6797588 Method for manufacturing a semiconductor device having a trench and a thick insulation film at the trench opening |
| 09/28/2004 | US6797586 Silicon carbide schottky barrier diode and method of making |
| 09/28/2004 | US6797580 Method for fabricating a bipolar transistor in a BiCMOS process and related structure |
| 09/28/2004 | US6797578 Method for fabrication of emitter of a transistor and related structure |
| 09/28/2004 | US6797576 Fabrication of p-channel field-effect transistor for reducing junction capacitance |
| 09/28/2004 | US6797572 Method for forming a field effect transistor having a high-k gate dielectric and related structure |
| 09/28/2004 | US6797571 Method of manufacturing semiconductor device |
| 09/28/2004 | US6797570 NAND-type flash memory devices and methods of fabricating the same |
| 09/28/2004 | US6797569 Method for low topography semiconductor device formation |
| 09/28/2004 | US6797568 Flash technology transistors and methods for forming the same |
| 09/28/2004 | US6797567 High-K tunneling dielectric for read only memory device and fabrication method thereof |
| 09/28/2004 | US6797566 Semiconductor integrated circuit device and process for producing the same |
| 09/28/2004 | US6797563 Method of forming cross point type DRAM cell |
| 09/28/2004 | US6797559 Method of fabricating semiconductor device having metal conducting layer |
| 09/28/2004 | US6797558 Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer |
| 09/28/2004 | US6797556 MOS transistor structure and method of fabrication |
| 09/28/2004 | US6797555 Direct implantation of fluorine into the channel region of a PMOS device |
| 09/28/2004 | US6797551 Semiconductor device having contact electrode to semiconductor substrate |
| 09/28/2004 | US6797550 Semiconductor device and manufacturing method therefor |
| 09/28/2004 | US6797549 High voltage MOS transistor with gate extension |
| 09/28/2004 | US6797548 Electro-optical device and thin film transistor and method for forming the same |
| 09/28/2004 | US6797547 Bladed silicon-on-insulator semiconductor devices and method of making |
| 09/28/2004 | US6797536 Magnetic memory device having yoke layer, and manufacturing method |
| 09/28/2004 | US6797535 Thin film transistor and method for fabricating same |
| 09/28/2004 | US6797533 Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
| 09/28/2004 | US6797525 Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
| 09/28/2004 | US6797341 Method for producing boride thin films |
| 09/28/2004 | US6797340 Exposing surface to a borane; depositing nucleation layer by alternately pulsing a tungsten compound and a silane reducing gas |
| 09/28/2004 | US6796193 Pressure transducer with composite diaphragm |
| 09/28/2004 | US6796180 Angular velocity sensor |
| 09/23/2004 | WO2004082347A2 Solder on a sloped surface |
| 09/23/2004 | WO2004082111A2 Mosfet power transistors and methods |
| 09/23/2004 | WO2004082029A1 Liquid crystal display |
| 09/23/2004 | WO2004082028A1 Semiconductor processing |
| 09/23/2004 | WO2004082027A1 Atomic device |
| 09/23/2004 | WO2004082018A2 Electronic component comprising a semiconductor chip and a plastic housing, and method for producing the same |
| 09/23/2004 | WO2004082011A1 Semiconductor device and method for manufacturing semiconductor device |
| 09/23/2004 | WO2004082005A1 Semiconductor mos, cmos devices and capacitors and method of manufacturing the same |
| 09/23/2004 | WO2004082002A1 A method of forming an element of a microelectronic circuit |
| 09/23/2004 | WO2004081987A2 Sige rectification process |
| 09/23/2004 | WO2004081984A2 Two-step post nitridation annealing for lower eot plasma nitrided gate dielectrics |
| 09/23/2004 | WO2004081982A2 Shallow trench isolation process |
| 09/23/2004 | WO2004081976A2 Thin film transistor substrate ofa display device and method of manufacturing the same |
| 09/23/2004 | WO2004081944A1 Non-volatile, integrated memory cell, and method for writing or reading information into/out of the memory cell |
| 09/23/2004 | WO2004081617A2 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 09/23/2004 | WO2004061974A3 Silicon carbide power mos field effect transistors and manufacturing methods |
| 09/23/2004 | WO2004038770A3 Integrated circuit arrangement comprising a capacitor, and production method |
| 09/23/2004 | WO2004032182A3 Method for making a wire nanostructure in a semiconductor film |
| 09/23/2004 | WO2004008537A3 Photodetector circuits |
| 09/23/2004 | US20040185683 Wiring, display device and method of manufacturing the same |
| 09/23/2004 | US20040185676 Semiconductor device and method of manufacturing semiconductor device |
| 09/23/2004 | US20040185673 Film formation method and manufacturing method of semiconductor device |
| 09/23/2004 | US20040185669 Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask |
| 09/23/2004 | US20040185665 Fabrication method of semiconductor wafer |
| 09/23/2004 | US20040185660 Method for manufacturing semiconductor device |
| 09/23/2004 | US20040185659 Method for manufacturing semiconductor device |
| 09/23/2004 | US20040185654 Low-temperature growth high-quality ultra-thin praseodymium gate dielectrics |
| 09/23/2004 | US20040185651 [method of forming bumps] |
| 09/23/2004 | US20040185646 Method for creating a stepped structure on a substrate |
| 09/23/2004 | US20040185643 P-type semiconductor manufacturing method and semiconductor device |
| 09/23/2004 | US20040185641 Thin film transistor having high mobility and high on-current and method for manufacturing the same |
| 09/23/2004 | US20040185640 Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD |
| 09/23/2004 | US20040185633 Complementary junction-narrowing implants for ultra-shallow junctions |
| 09/23/2004 | US20040185630 Technique to mitigate short channel effects with vertical gate transistor with different gate materials |
| 09/23/2004 | US20040185629 Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions |
| 09/23/2004 | US20040185628 Nonvolatile memory device and method of forming same |
| 09/23/2004 | US20040185627 Method for making a semiconductor device having a high-k gate dielectric |
| 09/23/2004 | US20040185626 Semiconductor device with different lattice properties |