| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/28/2004 | US20040212752 Semiconductor element and liquid crystal display device using the same |
| 10/28/2004 | US20040212419 MOSFET circuit having reduced output voltage oscillations during a switch-off operation |
| 10/28/2004 | US20040212084 Thick film millimeter wave transceiver module |
| 10/28/2004 | US20040212046 Controlling diffusion in doped semiconductor regions |
| 10/28/2004 | US20040212045 Bipolar transistor and method of producing same |
| 10/28/2004 | US20040212044 Bipolar transistor and a method of manufacturing the same |
| 10/28/2004 | US20040212043 Triply implanted complementary bipolar transistors |
| 10/28/2004 | US20040212042 Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor |
| 10/28/2004 | US20040212039 Semiconductor device |
| 10/28/2004 | US20040212034 Semiconductor device, manufacturing method of the same and semiconductor module |
| 10/28/2004 | US20040212033 Semiconductor device and method for manufacturing the same |
| 10/28/2004 | US20040212032 Lateral super-junction semiconductor device |
| 10/28/2004 | US20040212028 Thin film membrane structure |
| 10/28/2004 | US20040212025 High k oxide |
| 10/28/2004 | US20040212024 Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same |
| 10/28/2004 | US20040212023 Semiconductor memory device including MOS transistors each having a floating gate and a control gate |
| 10/28/2004 | US20040212022 Semiconductor device and method for manufacturing the same |
| 10/28/2004 | US20040212019 Semiconductor device and a method of manufacturing the same |
| 10/28/2004 | US20040212016 Semiconductor device and method for evaluating characteristics of the same |
| 10/28/2004 | US20040212013 Semiconductor device |
| 10/28/2004 | US20040212011 Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating the same |
| 10/28/2004 | US20040212010 Semiconductor integrated circuit device incorporating memory cell transistor and logic transistor, and method of manufacturing the same |
| 10/28/2004 | US20040212009 Method of operating a semiconductor memory array of floating gate memory cells with horizontally oriented edges |
| 10/28/2004 | US20040212008 Semiconductor memory device including MOS transistors each having a floating gate and a control gate |
| 10/28/2004 | US20040212006 Non-volatile memory cells utilizing substrate trenches |
| 10/28/2004 | US20040212005 Twin eeprom memory transistors with subsurface stepped floating gates |
| 10/28/2004 | US20040212004 Mirror image non-volatile memory cell transistor pairs with single poly layer |
| 10/28/2004 | US20040212003 Mirror image memory cell transistor pairs featuring poly floating spacers |
| 10/28/2004 | US20040212001 Multilayer analog interconnecting line layout for a mixed-signal integrated circuit |
| 10/28/2004 | US20040212000 Semiconductor device |
| 10/28/2004 | US20040211999 Semiconductor integrated circuit device and manufacturing method thereof |
| 10/28/2004 | US20040211996 Magnetic memory elements using 360 degree walls |
| 10/28/2004 | US20040211992 Method for manufacturing and structure for transistors with reduced gate to contact spacing |
| 10/28/2004 | US20040211990 Semiconductor device |
| 10/28/2004 | US20040211987 Field effect transistor (FET) reset device structure for photodiode image sensor |
| 10/28/2004 | US20040211985 Physically defined varactor in a CMOS process |
| 10/28/2004 | US20040211984 Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer |
| 10/28/2004 | US20040211983 Efficient source diffusion interconnect, MOS transistor and standard cell layout utilizing same |
| 10/28/2004 | US20040211980 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| 10/28/2004 | US20040211978 Semiconductor device and method of producing same |
| 10/28/2004 | US20040211977 Field effect transistor |
| 10/28/2004 | US20040211976 Compound semiconductor FET |
| 10/28/2004 | US20040211974 Two mask shottky barrier diode with locos structure |
| 10/28/2004 | US20040211965 Semiconductor device and manufacturing method thereof |
| 10/28/2004 | US20040211962 Semiconductor device, method of fabricating same, and, electrooptical device |
| 10/28/2004 | US20040211961 Flat panel display with thin film transistor |
| 10/28/2004 | US20040211960 Image recognition device and liquid crystal display apparatus having the same |
| 10/28/2004 | US20040211955 InGaAs/GaAs high electron mobility transistor |
| 10/28/2004 | US20040211910 Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices |
| 10/28/2004 | DE19983274B4 Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeicherbauteils A method of manufacturing a nonvolatile semiconductor memory device |
| 10/28/2004 | DE10314504A1 Eine verbesserte Technik zur Herstellung eines Oxid/Nitrid-Schichtstapels durch Kompensieren von Stickstoffungleichförmigkeiten An improved technique for producing an oxide / nitride layer stack by compensating Stickstoffungleichförmigkeiten |
| 10/28/2004 | DE10314161A1 Feldeffektelektroden für organische optoelektronische Bauelemente Field-effect electrodes for organic optoelectronic devices |
| 10/28/2004 | DE102004017164A1 Verfahren zur Herstellung eines SONOS-Speichers A process for the preparation of a SONOS memory |
| 10/28/2004 | DE102004016323A1 Redundanzsteuerschaltung zum sicheren Programmieren von Programmelementen und Halbleiterspeicher zur Verwendung derselben Redundancy control circuit for safe programming of program elements and semiconductor memory for using the same |
| 10/28/2004 | DE102004014744A1 Halbleiterbaugruppe, die einen Latch-up-Durchbruch infolge einer negativen Änderung einer Floating-Offsetspannung verhindern kann Semiconductor device that can prevent a latch-up due to breakthrough a negative change in a floating offset voltage |
| 10/28/2004 | DE102004010905A1 Kapazitiver Halbleitersensor Capacitive semiconductor sensor |
| 10/28/2004 | DE102004009141A1 Dynamic random access memory cell sets width of self aligned contact regions formed between adjacent pass gates and access gates to be larger than width of contact regions formed between adjacent access gates |
| 10/28/2004 | CA2486986A1 Compound semiconductor wafer and manufacturing method thereof |
| 10/27/2004 | EP1471586A1 Process for the production of organic transistor and organic transistor |
| 10/27/2004 | EP1471583A1 Nitride semiconductor device having support substrate and its manufacturing method |
| 10/27/2004 | EP1471581A2 MOS transistor having a mesh-type gate electrode |
| 10/27/2004 | EP1471580A2 Bipolar transistor and method of producing same |
| 10/27/2004 | EP1471577A2 Byte-operational nonvolatile semiconductor memory device |
| 10/27/2004 | EP1471576A2 Semiconductor device and method for evaluating characteristics of the same |
| 10/27/2004 | EP1471360A2 Capacitance detection electrode and method of manufacturing the same |
| 10/27/2004 | EP1470599A1 Electronic devices containing organic semiconductor materials |
| 10/27/2004 | EP1470592A2 Boron phosphide-based semiconductor device and production method thereof |
| 10/27/2004 | EP1470590A2 Non-volatile memory and method of forming thereof |
| 10/27/2004 | EP1470582A1 Reduction of negative bias temperature instability in narrow width pmos using f2 implantation |
| 10/27/2004 | EP1470578A1 Semiconductor component with an insulating layer and method for the production of a semiconductor component with an insulating layer |
| 10/27/2004 | EP1470577A1 A chemistry for etching quaternary interface layers on ingaasp mostly formed between gaas and inxga(1-x)p layers |
| 10/27/2004 | EP1470574A2 Enhanced photodetector |
| 10/27/2004 | EP0996970B1 Manufacture of field-effect semiconductor devices |
| 10/27/2004 | CN1541426A Solution influenced alignment |
| 10/27/2004 | CN1541417A Trech MIS device with active trench coreners and thick bottom oxide and method of making same |
| 10/27/2004 | CN1541416A 半导体装置 Semiconductor device |
| 10/27/2004 | CN1541413A Integrated circuit arrangement consisting of flat substrate |
| 10/27/2004 | CN1541405A Method for making substrate in partucular for optics, electronic or optoelectronics and resulting substrate |
| 10/27/2004 | CN1541404A High voltage, high temp capacitor structures and methods of fabricating same |
| 10/27/2004 | CN1541183A Nanoscale electronic devices and fabrication methods |
| 10/27/2004 | CN1541050A Figure forming method and mfg. method of device, electrooptical device and electronic instrument |
| 10/27/2004 | CN1541039A Flat panel display with anode electrode layer as power supply layer and fabrication method thereof |
| 10/27/2004 | CN1541038A Flat panel display with improved white balance |
| 10/27/2004 | CN1541037A Flat panel disply |
| 10/27/2004 | CN1540776A Method of mfg. organic transistor and organic transistor |
| 10/27/2004 | CN1540770A Semiconductor device and its mfg. method |
| 10/27/2004 | CN1540769A Grid structure from material with high dielectric constant and preparing technique |
| 10/27/2004 | CN1540768A Source/drain sink type ultrathin SOIMOS transistor and method for preparing IC |
| 10/27/2004 | CN1540767A 场效应晶体管 FET |
| 10/27/2004 | CN1540766A Follower, digital memory module and SRAM |
| 10/27/2004 | CN1540765A Semiconductor device and its mfg. method |
| 10/27/2004 | CN1540762A Flash memory possessing groove type selection grid and manufacturing method |
| 10/27/2004 | CN1540759A Semiconductor memory contg MOS transistor therewith flating grid and controlling grid |
| 10/27/2004 | CN1540755A Semiconductor integrated circuit device and electronic card using smae |
| 10/27/2004 | CN1540742A Semiconductor device and its mfg. method |
| 10/27/2004 | CN1540731A Semiconductor element, semiconductor device and its mfg. method |
| 10/27/2004 | CN1540729A Transistor of low temperature polysilicon thin film and producing metho |
| 10/27/2004 | CN1540724A Structure of for preparing gate containing nitrogen in silicon oxide layer of semiconductor device and preparation technique |
| 10/27/2004 | CN1540721A Semiconductor and process for fabricating same |
| 10/27/2004 | CN1540719A Method for preparing low temperature polysilicon thin film and transistor of low temperature polysilicon thin film |