H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2004
11/09/2004	US6815769 Power semiconductor component, IGBT and field-effect transistor
11/09/2004	US6815768 Semiconductor integrated circuit device incorporating memory cell transistor and logic transistor, and method of manufacturing the same
11/09/2004	US6815767 Insulated gate transistor
11/09/2004	US6815766 Semiconductor device with alternating conductivity type layer and method of manufacturing the same
11/09/2004	US6815765 Semiconductor device with function of modulating gain coefficient and semiconductor integrated circuit including the same
11/09/2004	US6815764 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
11/09/2004	US6815763 Semiconductor memory element, semiconductor device and control method thereof
11/09/2004	US6815761 Semiconductor integrated circuit device
11/09/2004	US6815759 Semiconductor memory with floating gate type FET
11/09/2004	US6815758 Flash memory cell
11/09/2004	US6815757 Single-poly EEPROM on a negatively biased substrate
11/09/2004	US6815756 Structure for split flash memory cells containing a programming injector and a method for fabricating the structure
11/09/2004	US6815755 Non-volatile memory cells, high voltage transistors and logic transistors integrated on a single chip
11/09/2004	US6815753 Semiconductor capacitor structure and method to form same
11/09/2004	US6815750 Field effect transistor with channel extending through layers on a substrate
11/09/2004	US6815749 Backside buried strap for SOI DRAM trench capacitor
11/09/2004	US6815748 Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole
11/09/2004	US6815747 Semiconductor device comprising capacitor
11/09/2004	US6815744 Microelectronic device for storing information with switchable ohmic resistance
11/09/2004	US6815741 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal
11/09/2004	US6815740 Gate feed structure for reduced size field effect transistors
11/09/2004	US6815738 Multiple gate MOSFET structure with strained Si Fin body
11/09/2004	US6815736 Isoelectronic co-doping
11/09/2004	US6815735 Semiconductor device
11/09/2004	US6815734 Varied trench depth for thyristor isolation
11/09/2004	US6815732 High-voltage silicon controlled rectifier structure
11/09/2004	US6815726 Semiconductor device and semiconductor substrate, and method of fabricating the same
11/09/2004	US6815724 Light emitting diode light source
11/09/2004	US6815720 Substrate having buried structure, display device including the substrate, method of making the substrate and method for fabricating the display device
11/09/2004	US6815719 Field effect transistor and image display apparatus using the same
11/09/2004	US6815718 Electro-optical device and electronic equipment using the same
11/09/2004	US6815717 Thin-film transistor and method of manufacturing the same
11/09/2004	US6815716 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix
11/09/2004	US6815707 Field-effect type semiconductor device for power amplifier
11/09/2004	US6815706 Nano optical sensors via molecular self-assembly
11/09/2004	US6815661 Specimen scanning mechanism adapted for implementation in a FIMS system
11/09/2004	US6815377 Laser annealing method and apparatus for determining laser annealing conditions
11/09/2004	US6815375 Methods of forming dielectric materials and methods of processing semiconductor substrates
11/09/2004	US6815368 Semiconductor substrate cleaning
11/09/2004	US6815351 Method for contacting a semiconductor configuration
11/09/2004	US6815347 Method of forming a reflective electrode
11/09/2004	US6815343 Gas treatment of thin film structures with catalytic action
11/09/2004	US6815321 Thin-film transistor and method of making same
11/09/2004	US6815310 Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
11/09/2004	US6815304 Silicon carbide bipolar junction transistor with overgrown base region
11/09/2004	US6815303 Bipolar transistors with low-resistance emitter contacts
11/09/2004	US6815302 Method of making a bipolar transistor with an oxygen implanted emitter window
11/09/2004	US6815300 Method for manufacturing semiconductor device having increased effective channel length
11/09/2004	US6815299 Method for manufacturing silicon carbide device using water rich anneal
11/09/2004	US6815298 Method of forming a semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer
11/09/2004	US6815297 Ultra-thin fully depleted SOI device and method of fabrication
11/09/2004	US6815296 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
11/09/2004	US6815294 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
11/09/2004	US6815293 High-voltage lateral transistor with a multi-layered extended drain structure
11/09/2004	US6815292 Flash memory having improved core field isolation in select gate regions
11/09/2004	US6815291 Method of manufacturing semiconductor device
11/09/2004	US6815290 Stacked gate flash memory device and method of fabricating the same
11/09/2004	US6815289 Method of manufacturing semiconductor device
11/09/2004	US6815285 Methods of forming dual gate semiconductor devices having a metal nitride layer
11/09/2004	US6815284 Manufacturing method of semiconductor device
11/09/2004	US6815283 Method of manufacturing semiconductor devices
11/09/2004	US6815282 Silicon on insulator field effect transistor having shared body contact
11/09/2004	US6815280 Method of manufacturing a semiconductor device including a plurality of kinds of MOS transistors having different gate widths
11/09/2004	US6815279 Manufacturing method of CMOS devices
11/09/2004	US6815278 Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations
11/09/2004	US6815277 Method for fabricating multiple-plane FinFET CMOS
11/09/2004	US6815276 Segmented power MOSFET of safe operation
11/09/2004	US6815274 Resist protect oxide structure of sub-micron salicide process
11/09/2004	US6815273 Method of manufacturing semiconductor devices
11/09/2004	US6815272 Bottom gate-type thin-film transistor and method for manufacturing the same
11/09/2004	US6815271 Semiconductor display devices and applications
11/09/2004	US6815269 Thin-film transistor and method for manufacturing the same
11/09/2004	US6815268 Method for forming a gate in a FinFET device
11/09/2004	US6815267 Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same
11/09/2004	US6815255 Semiconductor device and manufacturing method thereof
11/09/2004	US6815247 Thin-film opto-electronic device and a method of making it
11/09/2004	US6815246 Surface modification of silicon nitride for thick film silver metallization of solar cell
11/09/2004	US6815242 Semiconductor device and method of manufacturing the same
11/09/2004	US6815240 Thin film semiconductor device and manufacturing method thereof
11/09/2004	US6815219 Fabrication method and structure for ferroelectric nonvolatile memory field effect transistor
11/04/2004	WO2004095585A1 Nonvolatile semiconductor storage device and method for manufacturing nonvolatile semiconductor storage device
11/04/2004	WO2004095584A1 Bipolar transistor and method for the production thereof
11/04/2004	WO2004095583A2 Radiation-hardened transistor fabricated by modified cmos process
11/04/2004	WO2004095577A2 Semiconductor device comprising a field-effect transistor and method of operating the same
11/04/2004	WO2004095572A1 A method of fabricating a cmos device with dual metal gate electrodes
11/04/2004	WO2004095565A1 Semiconductor device comprising extensions produced from material with a low melting point
11/04/2004	WO2004095564A1 Method of manufacturing a semiconductor device with a bipolar transistor
11/04/2004	WO2004095562A1 Semiconductor device and process for producing the same
11/04/2004	WO2004095561A1 Compensation for heterogeneous nitrogen concentration in a nitrided silicon oxide layer
11/04/2004	WO2004095556A1 A method of forming a metal gate structure with tuning of work function by silicon incorporation
11/04/2004	WO2004095553A2 Method for producing a strained layer on a substrate and corresponding layer structure
11/04/2004	WO2004095540A2 Method of making a nanogap for variable capacitive elements and device having a nanogap
11/04/2004	WO2004095534A2 Gaas substrate with sb buffering for high in devices
11/04/2004	WO2004095530A2 Adjoining adjacent coatings on an element
11/04/2004	WO2004095526A2 Multi-bit non-volatile memory device and method therefor
11/04/2004	WO2004095525A2 Gate electrode for mos transistors
11/04/2004	WO2004095524A2 Semiconductor alignment aid
11/04/2004	WO2004095521A2 Low voltage silicon controlled rectifier (scr) for electrostatic discharge (esd) protection on silicon-on-insulator technologies
11/04/2004	WO2004095518A2 Thyristor circuit providing overcurrent protection to a low impedance load
11/04/2004	WO2004095517A2 Passivation layer for group iii-v semiconductor devices

1 ... 1466 1467 1468 1469 1470 1471 1472 1473 1474 1475 1476 1477 1478 1479 1480 1481 1482 1483 1484 1485 1486 ... 2182