Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2005
01/25/2005US6846709 Vertical gate CMOS with lithography-independent gate length
01/25/2005US6846707 Method for forming a self-aligned LTPS TFT
01/25/2005US6846706 Power MOSFET with ultra-deep base and reduced on resistance
01/25/2005US6846703 Three-dimensional device
01/25/2005US6846695 Solid state imaging device and method for manufacturing the same
01/25/2005US6846682 Chemically synthesized and assembled electronic devices
01/25/2005US6846474 As a source of stimulated emissions; may be suspended in liquids, and solids; formed into crystals, colloids and films; uniform particle sizes
01/25/2005US6846426 Formation of a bridge in a micro-device
01/25/2005CA2197048C Turbine engine ignition exciter circuit including low voltage lockout control
01/25/2005CA2124355C Nonvolative random access memory device
01/20/2005WO2005006461A1 Field effect organic transistor
01/20/2005WO2005006448A1 Field effect transistor and method for the production of a field effect transistor
01/20/2005WO2005006447A1 Double-gate transistor with enhanced carrier mobility
01/20/2005WO2005006446A1 Insulated gate power semiconductor devices
01/20/2005WO2005006445A1 Split-channel high electron mobility transistor device
01/20/2005WO2005006444A1 Heterojunction bipolar transistor and method for manufacturing same
01/20/2005WO2005006439A1 Semiconductor device
01/20/2005WO2005006437A1 Security-sensitive semiconductor product, particularly a smart-card chip
01/20/2005WO2005006420A1 Nitride semiconductor element and method for manufacturing thereof
01/20/2005WO2005006339A2 A scalable flash eeprom memory cell with notched floating gate and graded source region, and method of manufacturing the same
01/20/2005WO2005005562A2 Plasma spraying for joining silicon parts
01/20/2005WO2004112101A3 Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof
01/20/2005WO2004102673A3 Trenched dmos devices and processes for making same
01/20/2005WO2004102670A3 Semiconductor device with a field shaping region
01/20/2005WO2004068536A3 A thin film semiconductor device and method of manufacturing a thin film semiconductor device
01/20/2005US20050015235 Simulator and parameter extraction device for transistor, simulator and parameter extraction method for transistor, and associated computer program and storage medium
01/20/2005US20050014385 Array of nanoscopic mosfet transistors and fabrication methods
01/20/2005US20050014380 Plasma processing method and apparatus
01/20/2005US20050014379 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
01/20/2005US20050014367 Method of manufacturing semiconductor device
01/20/2005US20050014354 Semiconductor device and method for manufacturing the same
01/20/2005US20050014353 Method to reduce transistor gate to source/drain overlap capacitance by incorporaton of carbon
01/20/2005US20050014351 Nitrogen controlled growth of dislocation loop in stress enhanced transistor
01/20/2005US20050014340 Method of manufacturing a semiconductor integrated circuit device having a trench
01/20/2005US20050014339 Method for fabricating semiconductor device
01/20/2005US20050014338 Integration method of a semiconductor device having a recessed gate electrode
01/20/2005US20050014337 Method of making a vertical compound semiconductor field effect transistor device
01/20/2005US20050014336 Method of manufacturing semiconductor device and semiconductor device
01/20/2005US20050014335 Method for fabricating a memory cell
01/20/2005US20050014334 Method for making high density nonvolatile memory
01/20/2005US20050014329 Method of fabricating isolated semiconductor devices in epi-less substrate
01/20/2005US20050014326 Semiconductor integrated circuit device and process for producing the same
01/20/2005US20050014325 Point contact array, not circuit, and electronic circuit comprising the same
01/20/2005US20050014324 Method of fabricating isolated semiconductor devices in epi-less substrate
01/20/2005US20050014322 Method for making high density nonvolatile memory
01/20/2005US20050014321 Method for fabricating semiconductor photodetector
01/20/2005US20050014320 Magnetic memory cell having an annular data layer and a soft reference layer
01/20/2005US20050014319 Method for manufacturing semiconductor device
01/20/2005US20050014318 FinFet device and method of fabrication
01/20/2005US20050014316 Semiconductor device, display device and method of fabricating the same
01/20/2005US20050014315 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus
01/20/2005US20050014314 Ultra-thin channel device with raised source and drain and solid source extension doping
01/20/2005US20050014304 Low temperature polycrystalline silicon type thin film transistor and a method of the thin film transistor fabrication
01/20/2005US20050014294 Novel method of body contact for SOI MOSFET
01/20/2005US20050013168 Non-volatile semiconductor memory device, electronic card and electronic device
01/20/2005US20050013161 Ferroelectric memory and method of manufacturing the same
01/20/2005US20050013158 Nonvolatile semiconductor memory
01/20/2005US20050013151 Coiled circuit device and method of making the same
01/20/2005US20050013090 Capacitor and method for producing a capacitor
01/20/2005US20050013089 Semiconductor device and method for manufacturing the same
01/20/2005US20050012887 Display device
01/20/2005US20050012872 Liquid crystal display
01/20/2005US20050012732 Display device and electronic apparatus
01/20/2005US20050012228 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
01/20/2005US20050012220 Contacts for an improved high-density nonvolatile memory
01/20/2005US20050012205 Backside metallization on sides of microelectronic dice for effective thermal contact with heat dissipation devices
01/20/2005US20050012182 Alloy type semiconductor nanocrystals and method for preparing the same
01/20/2005US20050012181 Diode
01/20/2005US20050012180 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
01/20/2005US20050012179 Semiconductor device
01/20/2005US20050012178 Semiconductor device
01/20/2005US20050012172 Semiconductor device and its manufacturing method
01/20/2005US20050012171 Semiconductor device and method of fabricating the same
01/20/2005US20050012165 Semiconductor device
01/20/2005US20050012164 High k oxide
01/20/2005US20050012163 Apparatus and manufacturing process of carbon nanotube gate field effect transistor
01/20/2005US20050012162 Semiconductor storage device
01/20/2005US20050012160 Etching metal silicides and germanides
01/20/2005US20050012159 Semiconductor device with bypass capacitor
01/20/2005US20050012155 Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
01/20/2005US20050012154 Method for making high density nonvolatile memory
01/20/2005US20050012153 Semiconductor device
01/20/2005US20050012152 Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same
01/20/2005US20050012150 Thin film transistor array panel and method for fabricating the same
01/20/2005US20050012149 Semiconductor device having a localized halo implant therein and method of manufacture therefor
01/20/2005US20050012148 Transistor with improved safe operating area
01/20/2005US20050012147 LDMOS transistor device, integrated circuit, and fabrication method thereof
01/20/2005US20050012146 Method of fabricating a field effect transistor structure with abrupt source/drain junctions
01/20/2005US20050012145 Damascene gate multi-mesa MOSFET
01/20/2005US20050012144 Semiconductor device
01/20/2005US20050012143 Semiconductor device and method of manufacturing the same
01/20/2005US20050012142 Nonvolatile semiconductor memory device and manufacturing method therefor
01/20/2005US20050012141 Asymmetric band-gap engineered nonvolatile memory device
01/20/2005US20050012140 EEPROM device having selecting transistors and method of fabricating the same
01/20/2005US20050012139 Data erasing method, and memory apparatus having data erasing circuit using such method
01/20/2005US20050012138 Nonvolatile semiconductor memory device
01/20/2005US20050012137 Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
01/20/2005US20050012136 Method for forming silicon film with changing grain size by thermal process
01/20/2005US20050012135 Split-gate flash with source/drain multi-sharing
01/20/2005US20050012134 Nonvolatile memory device driving method, semiconductor storage device, and liquid crystal display device including the semiconductor storage device