Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2005
07/05/2005US6913980 Process method of source drain spacer engineering to improve transistor capacitance
07/05/2005US6913977 Triple-diffused trench MOSFET and method of fabricating the same
07/05/2005US6913976 Method of manufacturing semiconductor device
07/05/2005US6913975 Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation
07/05/2005US6913974 Flash memory device structure and manufacturing method thereof
07/05/2005US6913972 Method of fabrication on a gate pattern of a non-volatile memory device
07/05/2005US6913969 EEPROM and method of fabricating the same
07/05/2005US6913964 Method of fabricating a one transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region
07/05/2005US6913962 Manufacturing method of semiconductor device and semiconductor device
07/05/2005US6913961 Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere
07/05/2005US6913960 Fin-based double poly dynamic threshold CMOS FET with spacer gate and method of fabrication
07/05/2005US6913959 Method of manufacturing a semiconductor device having a MESA structure
07/05/2005US6913957 Method of fabricating a thin film transistor array panelsubstrate
07/05/2005US6913956 Semiconductor device and method of manufacturing the same
07/05/2005US6913955 Method of manufacturing a thyristor device with a control port in a trench
07/05/2005US6913951 Method of making a lead-on-chip device
07/05/2005US6913943 Photovoltaic device
06/2005
06/30/2005WO2005060007A1 Gallium nitride material transistors and methods associated with the same
06/30/2005WO2005060006A2 Gate insulating film comprising silicon and oxygen
06/30/2005WO2005060000A2 Bridge field-effect transistor storage cell, device comprising said cells and method for producing a bridge field-effect transistor storage cell
06/30/2005WO2005059990A1 Electronic device and semiconductor device and method for manufacturing the same
06/30/2005WO2005059983A1 Gallium nitride material devices including an electrode-defining layer and methods of forming the same
06/30/2005WO2005059978A2 Single-crystal semiconductor layer with heteroaromatic macro-network
06/30/2005WO2005059961A2 Low crosstalk substrate for mixed-signal integrated circuits
06/30/2005WO2005059959A2 Light emitting diode systems
06/30/2005WO2005059958A2 Monolithic power semiconductor structures
06/30/2005WO2005038932A3 Fully depleted silicon-on-insulator cmos logic
06/30/2005WO2005038865A3 Amorphous carbon layer to improve photoresist adhesion
06/30/2005WO2005034207A3 Varying carrier mobility on finfet active surfaces to achieve overall design goals
06/30/2005WO2004068546A3 Tunnel device level shift circuit
06/30/2005US20050142897 Method for forming polycrystalline silicon film
06/30/2005US20050142894 Electronic device, method, monomer and polymer
06/30/2005US20050142889 Method of forming oxide layer in semiconductor device
06/30/2005US20050142876 Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride
06/30/2005US20050142871 Method of forming a conductive via plug
06/30/2005US20050142868 Method and apparatus for rapid cooldown of annealed wafer
06/30/2005US20050142858 Method of forming barrier metal in semiconductor device
06/30/2005US20050142855 Method for manufacturing semiconductor device
06/30/2005US20050142850 Method of forming metal wiring of semiconductor device
06/30/2005US20050142833 Method of fabricating semiconductor device
06/30/2005US20050142830 Method for forming a contact of a semiconductor device
06/30/2005US20050142828 Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition technique
06/30/2005US20050142827 Mono gate memory device and fabricating method thereof
06/30/2005US20050142822 Manufacturing method of semiconductor device
06/30/2005US20050142821 Methods of forming halo regions in NMOS transistors
06/30/2005US20050142820 Method of manufacturing gallium nitride based semiconductor light emitting device
06/30/2005US20050142818 Method of manufacturing semiconductor device
06/30/2005US20050142816 Forming method of gate insulating layer and nitrogen density measuring method thereof
06/30/2005US20050142811 Method for manufacturing semiconductor device
06/30/2005US20050142810 Structure and method for III-nitride device isolation
06/30/2005US20050142809 Method for forming gate in semiconductor device
06/30/2005US20050142794 Semiconductor device and method for fabricating the same
06/30/2005US20050142792 Method of fabricating isolated semiconductor devices in epi-less substrate
06/30/2005US20050142791 Method of fabricating isolated semiconductor devices in epi-less substrate
06/30/2005US20050142787 Method of fabricating self-aligned bipolar transistor
06/30/2005US20050142785 Method of fabricating semiconductor device
06/30/2005US20050142784 Methods of fabricating semiconductor devices
06/30/2005US20050142782 Methods of manufacturing a MOS transistor
06/30/2005US20050142780 Method of fabricating a fin transistor
06/30/2005US20050142777 Method of fabricating transistor in semiconductor device
06/30/2005US20050142773 Structure and method for protecting substrate of an active area
06/30/2005US20050142772 Method of manufacturing semiconductor device
06/30/2005US20050142771 Semiconductor device and method for fabricating the same
06/30/2005US20050142769 Semiconductor device and method for manufacturing the same
06/30/2005US20050142768 Controlled faceting of source/drain regions
06/30/2005US20050142766 Method of fabricating an ultra-narrow channel semiconductor device
06/30/2005US20050142765 Method for manufacturing flash memory device
06/30/2005US20050142764 Method for manufacturing semiconductor device
06/30/2005US20050142763 Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same
06/30/2005US20050142761 Method of fabricating split gate flash memory device
06/30/2005US20050142760 Method of fabricating semiconductor device
06/30/2005US20050142759 Methods for fabricating semiconductor devices
06/30/2005US20050142758 Method of fabricating split gate flash memory device
06/30/2005US20050142754 Split gate memory device and fabricating method thereof
06/30/2005US20050142753 Methods of forming silicon quantum dots and methods of fabricating semiconductor memory device using the same
06/30/2005US20050142752 Method for fabricating flash memory device
06/30/2005US20050142751 Methods for fabricating nonvolatile memory device
06/30/2005US20050142749 Flash memory device and fabricating method thereof
06/30/2005US20050142748 Nonvolatile memory device and methods of fabricating and driving the same
06/30/2005US20050142747 Method for fabricating semiconductor device
06/30/2005US20050142741 Method for manufacturing flash memory device
06/30/2005US20050142738 Method of fabricating a fin field effect transistor
06/30/2005US20050142726 Method of forming gate of flash memory cell
06/30/2005US20050142724 Method of fabricating isolated semiconductor devices in epi-less substrate
06/30/2005US20050142723 Method of fabricating high-voltage CMOS device
06/30/2005US20050142722 Method for fabricating gate electrode of semiconductor device
06/30/2005US20050142721 Methods of fabricating nonvolatile memory using a quantum dot
06/30/2005US20050142720 Method for fabricating MOS field effect transistor
06/30/2005US20050142719 Method of fabricating MOS transistor
06/30/2005US20050142718 Semiconductor device having a dual-damascene gate and manufacturing method thereof
06/30/2005US20050142717 Method of forming transistors with ultra-short gate feature
06/30/2005US20050142716 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium
06/30/2005US20050142715 Semiconductor device with high dielectric constant insulator and its manufacture
06/30/2005US20050142714 Method of fabricating thin film transistor array substrate
06/30/2005US20050142713 Method of manufacturing a semiconductor integrated circuit device
06/30/2005US20050142712 Method for forming gate dielectric layer
06/30/2005US20050142709 Method for fabricating field effect transistor
06/30/2005US20050142708 Method for forming polycrystalline silicon film
06/30/2005US20050142707 Method of crystallizing/activating polysilicon layer and method of fabricating thin film transistor having the same polysilicon layer
06/30/2005US20050142706 Method of preventing semiconductor layers from bending and semiconductor device formed thereby
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