| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/07/2005 | US20050145843 Thin film transistor and method of manufacturing the same |
| 07/07/2005 | US20050145841 Method to selectively identify reliability risk die based on characteristics of local regions on the wafer |
| 07/07/2005 | US20050145840 ZnO group epitaxial semiconductor device and its manufacture |
| 07/07/2005 | US20050145838 Vertical Carbon Nanotube Field Effect Transistor |
| 07/07/2005 | US20050145837 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain |
| 07/07/2005 | DE19957540B4 Verfahren zum Herstellen eines Feldeffekttransistors mit Anti-Punch-Through-Implantationsgebiet A method of manufacturing a field effect transistor with non-punch-through implant region |
| 07/07/2005 | DE19853433B4 Herstellungsverfahren einer Halbleitervorrichtung Manufacturing method of a semiconductor device |
| 07/07/2005 | DE19828494B4 MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors MOSFET device with protection against switching through a parasitic transistor |
| 07/07/2005 | DE19640443B4 Halbleitervorrichtung und ihr Herstellungsverfahren A semiconductor device and its manufacturing method |
| 07/07/2005 | DE19640003B4 Halbleitervorrichtung und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 07/07/2005 | DE10358046A1 Bipolartransistor mit erhöhtem Basisanschlussgebiet und Verfahren zu seiner Herstellung Bipolar transistor with increased base connection region and method for its manufacture |
| 07/07/2005 | DE10357796A1 Power semiconductor component has number of charge carriers in second region which is dependent on operational state |
| 07/07/2005 | DE10355587A1 Manufacturing method for vertical semiconductor power transistor, whose source-body zones in substrate zones are formed by ion implantation with following rapid thermal annealing (RTA) |
| 07/07/2005 | DE102004055215A1 Versetzt gebondete Mehrchip-Halbleitervorrichtung Offset bonded multi-chip semiconductor device |
| 07/07/2005 | DE102004042784A1 Beschleunigungssensor und Verfahren zum Herstellen eines Beschleunigungssensors Acceleration sensor and method for producing an acceleration sensor |
| 07/07/2005 | DE102004042783A1 Halbleitervorrichtung und Herstellungsverfahren von dieser A semiconductor device and manufacturing method of this |
| 07/07/2005 | DE102004031517A1 Verfahren zur Herstellung eines Flash-Speicherbauelements A method for producing a flash memory device |
| 07/07/2005 | DE102004030920A1 Formation of trench for isolation film in semiconductor device comprises forming etching mask on semiconductor substrate, etching semiconductor substrate to form trench, performing first cleaning, and performing sidewall oxidation process |
| 07/07/2005 | CA2547832A1 Semiconductor light emitting devices and submounts and methods for forming the same |
| 07/06/2005 | EP1551059A2 Semiconductor device with modified mobility and thin film transistor having the same |
| 07/06/2005 | EP1550165A1 A silicon thin film transistor, a method of manufacture, a display screen |
| 07/06/2005 | EP1550164A1 Mosfets incorporating nickel germanosilicided gate and methods of their formation |
| 07/06/2005 | EP1550163A1 Lateral insulated gate bipolar pmos device |
| 07/06/2005 | EP1550154A1 Field effect transistor with local source/drain insulation and associated method of production |
| 07/06/2005 | EP1550150A2 A dmos device with a programmable threshold voltage |
| 07/06/2005 | EP1393383B1 Lateral pin diode and method for producing the same |
| 07/06/2005 | EP1138084B1 Ferroelectric transistor and method for the production thereof |
| 07/06/2005 | CN2708506Y RF SOI power NMOSFET having stepped oxidizing layer |
| 07/06/2005 | CN1636281A Solutions of organic semiconductors |
| 07/06/2005 | CN1636263A Topside active optical device apparatus and method |
| 07/06/2005 | CN1636162A 薄膜晶体管和液晶显示器 Thin-film transistor liquid crystal display |
| 07/06/2005 | CN1635639A Structure and method for semiconductor integrated circuit tunnel oxidation window region design |
| 07/06/2005 | CN1635616A A method for manufacturing transistor with extending gate |
| 07/06/2005 | CN1635615A Method and apparatus for quickly cooling and annealing of wafer |
| 07/06/2005 | CN1635612A Electrostatic discharge protection method and structure for photomask |
| 07/06/2005 | CN1209822C Channel metallic-oxide-semiconductor device and terminal structure |
| 07/06/2005 | CN1209821C Composite quantum point device and a process for making it |
| 07/06/2005 | CN1209820C Transistor for reducing parasitic capacitance |
| 07/06/2005 | CN1209819C Non-volatile semiconductor memory unit with separate bit line structure |
| 07/06/2005 | CN1209818C Complementary bipolar transistor and its manufacturing method |
| 07/06/2005 | CN1209794C Protection structure of gate electrode pad in power semiconductor equipment and its manufacturing method |
| 07/06/2005 | CN1209672C Liquid crystal display device |
| 07/05/2005 | US6914846 Flash EEprom system |
| 07/05/2005 | US6914826 Flash memory structure and operating method thereof |
| 07/05/2005 | US6914820 Erasing storage nodes in a bi-directional nonvolatile memory cell |
| 07/05/2005 | US6914819 Non-volatile flash memory |
| 07/05/2005 | US6914818 Non-volatile memory and semiconductor device |
| 07/05/2005 | US6914817 Highly compact EPROM and flash EEPROM devices |
| 07/05/2005 | US6914812 Tunnel device level shift circuit |
| 07/05/2005 | US6914803 Low-power semiconductor memory device |
| 07/05/2005 | US6914800 Structures, methods, and systems for ferroelectric memory transistors |
| 07/05/2005 | US6914655 Liquid crystal electro-optic device |
| 07/05/2005 | US6914645 Liquid crystal display device |
| 07/05/2005 | US6914642 Active matrix display device |
| 07/05/2005 | US6914448 Transistor circuit |
| 07/05/2005 | US6914390 Light emitting device, driving method for the same and electronic apparatus |
| 07/05/2005 | US6914343 Thermoelectric power from environmental temperature cycles |
| 07/05/2005 | US6914319 Semiconductor device having a fuse |
| 07/05/2005 | US6914316 Semiconductor trench isolation structure |
| 07/05/2005 | US6914312 Field effect transistor having a MIS structure and method of fabricating the same |
| 07/05/2005 | US6914311 Semiconductor device having doped gate electrode |
| 07/05/2005 | US6914310 Semiconductor isolator system |
| 07/05/2005 | US6914309 Semiconductor device with double sidewall spacer and layered contact |
| 07/05/2005 | US6914308 Vertical PNP bipolar transistor |
| 07/05/2005 | US6914307 Semiconductor device and method of manufacturing the same |
| 07/05/2005 | US6914305 Circuits and methods for electrostatic discharge protection in integrated circuits |
| 07/05/2005 | US6914303 Ultra thin channel MOSFET |
| 07/05/2005 | US6914302 Semiconductor device and manufacturing method thereof |
| 07/05/2005 | US6914301 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same |
| 07/05/2005 | US6914300 Semiconductor device |
| 07/05/2005 | US6914299 Horizontal surrounding gate MOSFETs |
| 07/05/2005 | US6914298 Double diffusion MOSFET with N+ and P+ type regions at an equal potential |
| 07/05/2005 | US6914297 Configuration for generating a voltage sense signal in a power semiconductor component |
| 07/05/2005 | US6914296 Controllable semiconductor component with multi-section control electrode |
| 07/05/2005 | US6914295 Tri-gate devices and methods of fabrication |
| 07/05/2005 | US6914294 Semiconductor device |
| 07/05/2005 | US6914293 Nonvolatile semiconductor memory device and method for manufacturing same |
| 07/05/2005 | US6914292 Floating gate field-effect transistor |
| 07/05/2005 | US6914291 Self-aligned floating-gate structure for flash memory device |
| 07/05/2005 | US6914290 Split-gate type nonvolatile memory devices |
| 07/05/2005 | US6914289 Hourglass ram |
| 07/05/2005 | US6914288 EEPROM and EEPROM manufacturing method |
| 07/05/2005 | US6914286 Semiconductor memory devices using sidewall spacers |
| 07/05/2005 | US6914284 Magnetic memory device and method of manufacturing the same |
| 07/05/2005 | US6914280 Switching circuit device |
| 07/05/2005 | US6914278 High permeability thin films and patterned thin films to reduce noise in high speed interconnections |
| 07/05/2005 | US6914277 Merged FinFET P-channel/N-channel pair |
| 07/05/2005 | US6914276 Molecular device, molecule array, rectifier device, rectifying method, sensor device, switching device, circuit device, logical circuit device, operational device and information processing device |
| 07/05/2005 | US6914274 Thin-film semiconductor epitaxial substrate having boron containing interface layer between a collector layer and a sub-collector layer |
| 07/05/2005 | US6914273 GaN-type enhancement MOSFET using hetero structure |
| 07/05/2005 | US6914271 High-voltage bidirectional switch |
| 07/05/2005 | US6914270 IGBT with PN insulation and production method |
| 07/05/2005 | US6914269 Electron injection composition for light emitting element, light emitting element, and light emitting device |
| 07/05/2005 | US6914260 Electro-optical device |
| 07/05/2005 | US6914258 Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof |
| 07/05/2005 | US6914256 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
| 07/05/2005 | US6914013 Method of forming semiconductor device containing oxide/nitride/oxide dielectric layer |
| 07/05/2005 | US6914012 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
| 07/05/2005 | US6913984 Method of manufacturing memory with nano dots |
| 07/05/2005 | US6913981 Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |