Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2005
07/28/2005US20050161733 Bidirectional high voltage switching device and energy recovery circuit having the same
07/28/2005US20050161732 Semiconductor device
07/28/2005US20050161731 Method for forming a memory structure using a modified surface topography and structure thereof
07/28/2005US20050161730 Non-volatile semiconductor memory and method of manufacturing the same
07/28/2005US20050161729 Flash memory cell and method of manufacturing the same
07/28/2005US20050161728 Molecular memory and method for making same
07/28/2005US20050161721 Word lines for memory cells
07/28/2005US20050161719 Semiconductor memory device having a shallow trench isolation structure
07/28/2005US20050161716 Semiconductor device and method for manufacturing the same
07/28/2005US20050161714 Solid-state imaging device
07/28/2005US20050161711 High performance FET devices and methods thereof
07/28/2005US20050161708 Charge transport material including a poly-3,3"-dialkyl-2,2':5'2"-terthiophene
07/28/2005US20050161707 Esd-robust power switch and method of using same
07/28/2005US20050161705 Semiconductor device and method of fabricating semiconductor device
07/28/2005US20050161704 Semiconductor device and its manufacturing method
07/28/2005US20050161703 Wavelength extension for backthinned silicon image arrays
07/28/2005US20050161701 Non-volatile semiconductor memory device
07/28/2005US20050161700 Integrated power switching circuit
07/28/2005US20050161698 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
07/28/2005US20050161688 Process for production of nitride semiconductor device and nitride semiconductor device
07/28/2005US20050161676 Thin film semiconductor device having arrayed configuration of semiconductor crystals
07/28/2005US20050161674 Semiconductor device and method of manufacturing the same
07/28/2005US20050161673 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
07/28/2005US20050161672 Electro-optical device and electronic device
07/28/2005US20050161671 Solid state image pick-up device capable of reducing power consumption
07/28/2005US20050161670 Liquid crystal display unit
07/28/2005US20050161667 Light emitting device and manufacturing method thereof
07/28/2005US20050161663 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
07/28/2005US20050161662 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
07/28/2005US20050161659 Nanowire and electronic device
07/28/2005US20050161434 Method for forming insulation film
07/28/2005US20050161219 Filter cake removal fluid
07/28/2005US20050160585 Magnetoresistive memory device and method for fabricating the same
07/28/2005DE4311388B4 Schichtsystem mit elektrisch aktivierbarer Schicht Layer system with electrically activatable layer
07/28/2005DE19905421B4 Leistungshalbleiterbauelement mit reduzierter Millerkapazität Power semiconductor component with a reduced Miller capacitance
07/28/2005DE10393138T5 Verfahren und Vorrichtung für eine verbesserte MOS-Gatestruktur zur Verringerung der Miller'schen Kapazität und der Schaltverluste Method and apparatus for an improved MOS-gate structure for reducing the Miller capacitance and switching losses
07/28/2005DE10361135A1 Production process for a trench transistor uses high energy implant to form a drain drift region into which the base of the trench extends
07/28/2005DE10361134A1 Process for producing deep p regions in silicon irradiates n substrate with high energy particles such that it is converted into a p region of required depth after a given time and temperature
07/28/2005DE10360874A1 Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren Field effect transistor with a heterostructure as well as associated production method
07/28/2005DE10360574A1 Leistungshalbleiterbauelement mit sanftem Abschaltverhalten Power semiconductor device with a soft turn-off
07/28/2005DE10360513A1 Integrierter Halbleiterschaltungschip mit verbesserter Hochstrom- und Wärmeleitungsfähigkeit The semiconductor integrated circuit chip with improved high-current and thermal conductivity
07/28/2005DE10359248A1 Thin-film transistor for active matrix-type organic light emitting device, has gate electrode having larger superimposition area with source electrode than drain electrode
07/28/2005DE102004062862A1 Transistor, such as metal oxide semiconductor transistor, comprises inversion epitaxial layer, trench, reverse spacers, gate electrode, spacers, pocket-well regions, lightly doped drain regions, source and drain regions, and silicide layer
07/28/2005DE102004062861A1 Verfahren zur Herstellung einer nichtflüchtigen Speichervorrichtung A method of manufacturing a nonvolatile memory device
07/28/2005DE102004060170A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
07/28/2005DE102004059971A1 Lasermaske und Kristallisationsverfahren unter Verwendung derselber sowie Display und Verfahren zu dessen Herstellung Laser mask and crystallization method using DERS Elber and display and process for its preparation
07/28/2005DE102004058021A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
07/28/2005DE102004055908A1 Semiconductor device such as an Insulating Gate Bipolar Transistor has pair of heat dissipating plates and heat dissipating block placed close to the device
07/28/2005DE102004053387A1 Verbesserte LED-Array-Implementierung Improved LED array implementation
07/28/2005DE102004051839A1 Fabrication of thin film transistor array substrate for making liquid crystal display devices, by forming conductive pattern group having gate electrode and gate line, using etch resist and soft mold, and forming gate insulating film
07/28/2005CA2552511A1 Inorganic nanowires
07/27/2005EP1557888A1 Semiconductor device and process for fabricating the same
07/27/2005EP1557884A2 Examination apparatus for biological sample and chemical sample
07/27/2005EP1557882A2 Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment
07/27/2005EP1556910A2 Field effect transistor and method for production thereof
07/27/2005EP1556909A1 Vertical integrated component, component arrangement and method for production of a vertical integrated component
07/27/2005EP1556908A2 Field effect transistor assembly and an integrated circuit array
07/27/2005EP1556899A1 Electronic component with an integrated passive electronic component and method for production thereof
07/27/2005EP1556892A1 Method for producing a transistor structure
07/27/2005EP1556889A1 Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
07/27/2005CN2713646Y Grid structure having high dielectric constant dielectric layer
07/27/2005CN1647283A Semiconductor device
07/27/2005CN1647282A Thin film transistor array panel
07/27/2005CN1647281A Bipolar transistor with graded base layer
07/27/2005CN1647265A Memory manufacturing process with bitline isolation
07/27/2005CN1647214A Refresh scheme for dynamic page programming
07/27/2005CN1647213A Algorithm dynamic reference programming
07/27/2005CN1646726A Vapor deposition method of low dielectric insulating film, thin film transistor using the same and preparation method thereof
07/27/2005CN1645630A Thin film transistor and method for fabricating the same
07/27/2005CN1645629A At least penta-sided-channel type of finfet transistor and manufacture thereof
07/27/2005CN1645628A Insulated gate-type semiconductor device and manufacturing method of the same
07/27/2005CN1645627A Ic device and transistor device and micro-electronic device and their manufacture
07/27/2005CN1645626A Random number generator
07/27/2005CN1645625A Semiconductor device and methods of manufacture
07/27/2005CN1645624A Semiconductor device having reduced gate charge and reduced on resistance and method
07/27/2005CN1645623A Base electrode pad layout for reducing parasitic capacitance between base and collector and manufacture of HBT thereby
07/27/2005CN1645622A Dielectric isolation type semiconductor device and method for manufacturing the same
07/27/2005CN1645621A Active array display device
07/27/2005CN1645618A Semiconductor memory device and making method thereof
07/27/2005CN1645616A Semiconductor chips and semiconductor components and their forming methods
07/27/2005CN1645615A Semiconductor device
07/27/2005CN1645611A Semiconductor device and display apparatus
07/27/2005CN1645604A Semiconductor device and method for manufacturing the same
07/27/2005CN1645602A Semiconductor device, semiconductor chip, method for manufacturing semiconductor device, and electronic apparatus
07/27/2005CN1645598A Semiconductor device, module for optical devices, and manufacturing method of semiconductor device
07/27/2005CN1645597A Semiconductor device and method of manufacturing same
07/27/2005CN1645596A Method of manufacturing a nonvolatile semiconductor memory device
07/27/2005CN1645593A Selective nitridation of gate oxides
07/27/2005CN1645578A Semiconductor device and a method of manufacturing the same
07/27/2005CN1645577A Manufacture of FinFET and ic including at least one FinFET
07/27/2005CN1645576A Pull-back method of forming fins in FinFET
07/27/2005CN1645573A Manufacturing method of semiconductor device
07/27/2005CN1645568A Method for providing a semiconductor substrate with a layer structure of activated dopants
07/27/2005CN1645562A Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment
07/27/2005CN1645515A Nonvolatile semiconductor memory
07/27/2005CN1645460A Electronic equipment
07/27/2005CN1645231A Thin-membrane transistor with microlens structure, forming method and liquid crystal displaying panel thereof
07/27/2005CN1645230A Semi-penetrating and semi-reflecting liquid crystal assembly, and pixel electrode structure thereof
07/27/2005CN1645229A Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof
07/27/2005CN1645228A Panel of universal liquid crystal displaying device