Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/28/2005 | US20050161733 Bidirectional high voltage switching device and energy recovery circuit having the same |
07/28/2005 | US20050161732 Semiconductor device |
07/28/2005 | US20050161731 Method for forming a memory structure using a modified surface topography and structure thereof |
07/28/2005 | US20050161730 Non-volatile semiconductor memory and method of manufacturing the same |
07/28/2005 | US20050161729 Flash memory cell and method of manufacturing the same |
07/28/2005 | US20050161728 Molecular memory and method for making same |
07/28/2005 | US20050161721 Word lines for memory cells |
07/28/2005 | US20050161719 Semiconductor memory device having a shallow trench isolation structure |
07/28/2005 | US20050161716 Semiconductor device and method for manufacturing the same |
07/28/2005 | US20050161714 Solid-state imaging device |
07/28/2005 | US20050161711 High performance FET devices and methods thereof |
07/28/2005 | US20050161708 Charge transport material including a poly-3,3"-dialkyl-2,2':5'2"-terthiophene |
07/28/2005 | US20050161707 Esd-robust power switch and method of using same |
07/28/2005 | US20050161705 Semiconductor device and method of fabricating semiconductor device |
07/28/2005 | US20050161704 Semiconductor device and its manufacturing method |
07/28/2005 | US20050161703 Wavelength extension for backthinned silicon image arrays |
07/28/2005 | US20050161701 Non-volatile semiconductor memory device |
07/28/2005 | US20050161700 Integrated power switching circuit |
07/28/2005 | US20050161698 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication |
07/28/2005 | US20050161688 Process for production of nitride semiconductor device and nitride semiconductor device |
07/28/2005 | US20050161676 Thin film semiconductor device having arrayed configuration of semiconductor crystals |
07/28/2005 | US20050161674 Semiconductor device and method of manufacturing the same |
07/28/2005 | US20050161673 Thin film transistor device and method of manufacturing the same, and liquid crystal display device |
07/28/2005 | US20050161672 Electro-optical device and electronic device |
07/28/2005 | US20050161671 Solid state image pick-up device capable of reducing power consumption |
07/28/2005 | US20050161670 Liquid crystal display unit |
07/28/2005 | US20050161667 Light emitting device and manufacturing method thereof |
07/28/2005 | US20050161663 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
07/28/2005 | US20050161662 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
07/28/2005 | US20050161659 Nanowire and electronic device |
07/28/2005 | US20050161434 Method for forming insulation film |
07/28/2005 | US20050161219 Filter cake removal fluid |
07/28/2005 | US20050160585 Magnetoresistive memory device and method for fabricating the same |
07/28/2005 | DE4311388B4 Schichtsystem mit elektrisch aktivierbarer Schicht Layer system with electrically activatable layer |
07/28/2005 | DE19905421B4 Leistungshalbleiterbauelement mit reduzierter Millerkapazität Power semiconductor component with a reduced Miller capacitance |
07/28/2005 | DE10393138T5 Verfahren und Vorrichtung für eine verbesserte MOS-Gatestruktur zur Verringerung der Miller'schen Kapazität und der Schaltverluste Method and apparatus for an improved MOS-gate structure for reducing the Miller capacitance and switching losses |
07/28/2005 | DE10361135A1 Production process for a trench transistor uses high energy implant to form a drain drift region into which the base of the trench extends |
07/28/2005 | DE10361134A1 Process for producing deep p regions in silicon irradiates n substrate with high energy particles such that it is converted into a p region of required depth after a given time and temperature |
07/28/2005 | DE10360874A1 Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren Field effect transistor with a heterostructure as well as associated production method |
07/28/2005 | DE10360574A1 Leistungshalbleiterbauelement mit sanftem Abschaltverhalten Power semiconductor device with a soft turn-off |
07/28/2005 | DE10360513A1 Integrierter Halbleiterschaltungschip mit verbesserter Hochstrom- und Wärmeleitungsfähigkeit The semiconductor integrated circuit chip with improved high-current and thermal conductivity |
07/28/2005 | DE10359248A1 Thin-film transistor for active matrix-type organic light emitting device, has gate electrode having larger superimposition area with source electrode than drain electrode |
07/28/2005 | DE102004062862A1 Transistor, such as metal oxide semiconductor transistor, comprises inversion epitaxial layer, trench, reverse spacers, gate electrode, spacers, pocket-well regions, lightly doped drain regions, source and drain regions, and silicide layer |
07/28/2005 | DE102004062861A1 Verfahren zur Herstellung einer nichtflüchtigen Speichervorrichtung A method of manufacturing a nonvolatile memory device |
07/28/2005 | DE102004060170A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation |
07/28/2005 | DE102004059971A1 Lasermaske und Kristallisationsverfahren unter Verwendung derselber sowie Display und Verfahren zu dessen Herstellung Laser mask and crystallization method using DERS Elber and display and process for its preparation |
07/28/2005 | DE102004058021A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
07/28/2005 | DE102004055908A1 Semiconductor device such as an Insulating Gate Bipolar Transistor has pair of heat dissipating plates and heat dissipating block placed close to the device |
07/28/2005 | DE102004053387A1 Verbesserte LED-Array-Implementierung Improved LED array implementation |
07/28/2005 | DE102004051839A1 Fabrication of thin film transistor array substrate for making liquid crystal display devices, by forming conductive pattern group having gate electrode and gate line, using etch resist and soft mold, and forming gate insulating film |
07/28/2005 | CA2552511A1 Inorganic nanowires |
07/27/2005 | EP1557888A1 Semiconductor device and process for fabricating the same |
07/27/2005 | EP1557884A2 Examination apparatus for biological sample and chemical sample |
07/27/2005 | EP1557882A2 Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment |
07/27/2005 | EP1556910A2 Field effect transistor and method for production thereof |
07/27/2005 | EP1556909A1 Vertical integrated component, component arrangement and method for production of a vertical integrated component |
07/27/2005 | EP1556908A2 Field effect transistor assembly and an integrated circuit array |
07/27/2005 | EP1556899A1 Electronic component with an integrated passive electronic component and method for production thereof |
07/27/2005 | EP1556892A1 Method for producing a transistor structure |
07/27/2005 | EP1556889A1 Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor |
07/27/2005 | CN2713646Y Grid structure having high dielectric constant dielectric layer |
07/27/2005 | CN1647283A Semiconductor device |
07/27/2005 | CN1647282A Thin film transistor array panel |
07/27/2005 | CN1647281A Bipolar transistor with graded base layer |
07/27/2005 | CN1647265A Memory manufacturing process with bitline isolation |
07/27/2005 | CN1647214A Refresh scheme for dynamic page programming |
07/27/2005 | CN1647213A Algorithm dynamic reference programming |
07/27/2005 | CN1646726A Vapor deposition method of low dielectric insulating film, thin film transistor using the same and preparation method thereof |
07/27/2005 | CN1645630A Thin film transistor and method for fabricating the same |
07/27/2005 | CN1645629A At least penta-sided-channel type of finfet transistor and manufacture thereof |
07/27/2005 | CN1645628A Insulated gate-type semiconductor device and manufacturing method of the same |
07/27/2005 | CN1645627A Ic device and transistor device and micro-electronic device and their manufacture |
07/27/2005 | CN1645626A Random number generator |
07/27/2005 | CN1645625A Semiconductor device and methods of manufacture |
07/27/2005 | CN1645624A Semiconductor device having reduced gate charge and reduced on resistance and method |
07/27/2005 | CN1645623A Base electrode pad layout for reducing parasitic capacitance between base and collector and manufacture of HBT thereby |
07/27/2005 | CN1645622A Dielectric isolation type semiconductor device and method for manufacturing the same |
07/27/2005 | CN1645621A Active array display device |
07/27/2005 | CN1645618A Semiconductor memory device and making method thereof |
07/27/2005 | CN1645616A Semiconductor chips and semiconductor components and their forming methods |
07/27/2005 | CN1645615A Semiconductor device |
07/27/2005 | CN1645611A Semiconductor device and display apparatus |
07/27/2005 | CN1645604A Semiconductor device and method for manufacturing the same |
07/27/2005 | CN1645602A Semiconductor device, semiconductor chip, method for manufacturing semiconductor device, and electronic apparatus |
07/27/2005 | CN1645598A Semiconductor device, module for optical devices, and manufacturing method of semiconductor device |
07/27/2005 | CN1645597A Semiconductor device and method of manufacturing same |
07/27/2005 | CN1645596A Method of manufacturing a nonvolatile semiconductor memory device |
07/27/2005 | CN1645593A Selective nitridation of gate oxides |
07/27/2005 | CN1645578A Semiconductor device and a method of manufacturing the same |
07/27/2005 | CN1645577A Manufacture of FinFET and ic including at least one FinFET |
07/27/2005 | CN1645576A Pull-back method of forming fins in FinFET |
07/27/2005 | CN1645573A Manufacturing method of semiconductor device |
07/27/2005 | CN1645568A Method for providing a semiconductor substrate with a layer structure of activated dopants |
07/27/2005 | CN1645562A Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment |
07/27/2005 | CN1645515A Nonvolatile semiconductor memory |
07/27/2005 | CN1645460A Electronic equipment |
07/27/2005 | CN1645231A Thin-membrane transistor with microlens structure, forming method and liquid crystal displaying panel thereof |
07/27/2005 | CN1645230A Semi-penetrating and semi-reflecting liquid crystal assembly, and pixel electrode structure thereof |
07/27/2005 | CN1645229A Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof |
07/27/2005 | CN1645228A Panel of universal liquid crystal displaying device |