| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/26/2006 | WO2005079443A3 Qwip with tunable spectral response |
| 05/26/2006 | WO2005020241A3 Fowler-nordheim block alterable eeprom memory cell |
| 05/25/2006 | WO1999010939A9 A method of manufacturing a field-effect transistor substantially consisting of organic materials |
| 05/25/2006 | US20060112466 Nanostructure, electronic device and method of manufacturing the same |
| 05/25/2006 | US20060110886 MOSFET structure and method of fabricating the same |
| 05/25/2006 | US20060110876 MOS transistor with reduced kink effect and method for the manufacture thereof |
| 05/25/2006 | US20060110875 Trench lateral power mosfet and a method of manufacturing the same |
| 05/25/2006 | US20060110871 Methods for fabricating thin film transistors |
| 05/25/2006 | US20060110869 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| 05/25/2006 | US20060110866 Method for fabricating thin film transistors |
| 05/25/2006 | US20060110864 Method of fabricating a thin film transistor using dual or multiple gates |
| 05/25/2006 | US20060110843 Method of manufacturing an external force detection sensor |
| 05/25/2006 | US20060109729 Semiconductor storage device and mobile electronic device |
| 05/25/2006 | US20060109607 Monolithically integrated capacitor |
| 05/25/2006 | US20060108667 Method for manufacturing a small pin on integrated circuits or other devices |
| 05/25/2006 | US20060108666 Semiconductor device and method of fabricating the same |
| 05/25/2006 | US20060108662 An electrically programmable fuse for silicon-on-insulator (soi) technology |
| 05/25/2006 | US20060108661 Semiconductor device having STI without divot and its manufacture |
| 05/25/2006 | US20060108654 Hall sensor and method for the operation thereof |
| 05/25/2006 | US20060108653 Preventing substrate deformation |
| 05/25/2006 | US20060108652 Microelectromechanical systems, and methods for encapsulating and fabricating same |
| 05/25/2006 | US20060108651 Lowered Source/Drain Transistors |
| 05/25/2006 | US20060108650 Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same |
| 05/25/2006 | US20060108648 Memory with self-aligned trenches for narrow gap isolation regions |
| 05/25/2006 | US20060108647 Self-aligned trench filling for narrow gap isolation regions |
| 05/25/2006 | US20060108646 NROM semiconductor memory device and fabrication method |
| 05/25/2006 | US20060108644 Self-aligned double gate device and method for forming same |
| 05/25/2006 | US20060108643 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
| 05/25/2006 | US20060108641 Device having a laterally graded well structure and a method for its manufacture |
| 05/25/2006 | US20060108640 Semiconductor integrated circuit |
| 05/25/2006 | US20060108639 Transistor, method of manufacturing transistor, and method of operating transistor |
| 05/25/2006 | US20060108634 Semiconductor apparatus and method for manufacturing the same |
| 05/25/2006 | US20060108633 Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same |
| 05/25/2006 | US20060108632 Reducing delays in word line selection |
| 05/25/2006 | US20060108631 Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures |
| 05/25/2006 | US20060108630 Semiconductor memory and method for manufacturing the same |
| 05/25/2006 | US20060108629 Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same |
| 05/25/2006 | US20060108628 Multi-level split-gate flash memory |
| 05/25/2006 | US20060108627 NAND flash memory devices including multi-layer memory cell transistor structures and methods of fabricating the same |
| 05/25/2006 | US20060108624 Semiconductor device |
| 05/25/2006 | US20060108623 Oxidative top electrode deposition process, and microelectronic device structure |
| 05/25/2006 | US20060108622 Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same |
| 05/25/2006 | US20060108621 Capacitor insulating film, method for fabricating the same, capacitor element, method for fabricating the same, semiconductor memory device, and method for fabricating the same |
| 05/25/2006 | US20060108620 Reduced power magnetoresistive random access memory elements |
| 05/25/2006 | US20060108619 Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics |
| 05/25/2006 | US20060108617 Solid-state image pickup device and manufacturing method for the same |
| 05/25/2006 | US20060108616 High-voltage metal-oxide-semiconductor transistor |
| 05/25/2006 | US20060108614 CMOS image sensor |
| 05/25/2006 | US20060108612 Packaging |
| 05/25/2006 | US20060108611 Image sensing device and method of |
| 05/25/2006 | US20060108610 Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method |
| 05/25/2006 | US20060108609 Barrier Dielectric Stack for Seam Protection |
| 05/25/2006 | US20060108608 Hetero bipolar transistor |
| 05/25/2006 | US20060108605 Schottky barrier diode and integrated circuit using the same |
| 05/25/2006 | US20060108604 Bipolar transistor and a method of fabricating said transistor |
| 05/25/2006 | US20060108603 Group III nitride compound semiconductor light emitting device |
| 05/25/2006 | US20060108602 Field effect transistor and method of manufacturing the same |
| 05/25/2006 | US20060108600 Semiconductor device and method for manufacturing the same |
| 05/25/2006 | US20060108599 Triple well structure and method for manufacturing the same |
| 05/25/2006 | US20060108590 Group III-V nitride series semiconductor substrate and assessment method therefor |
| 05/25/2006 | US20060108589 Semiconductor device |
| 05/25/2006 | US20060108588 Display device and electronic device |
| 05/25/2006 | US20060108587 Thin film transistor array panel and manufacturing method thereof |
| 05/25/2006 | US20060108586 Display panels with anti-newton ring structures |
| 05/25/2006 | US20060108585 Thin film transistors and fabrication methods thereof |
| 05/25/2006 | US20060108582 Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
| 05/25/2006 | US20060108581 Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor |
| 05/25/2006 | US20060108580 Organic EL device |
| 05/25/2006 | US20060108578 Organic photoelectric device with improved electron transport efficiency |
| 05/25/2006 | US20060108577 Nanocrystal protective layer for crossbar molecular electronic devices |
| 05/25/2006 | US20060108576 Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method |
| 05/25/2006 | US20060108575 Method of fabricating static random access memory |
| 05/25/2006 | US20060108574 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process |
| 05/25/2006 | US20060108573 Single crystalline gallium nitride thick film having reduced bending deformation |
| 05/25/2006 | US20060108572 Stacked module systems and methods |
| 05/24/2006 | EP1659647A1 Organic electroluminescence device and method of manufacturing the same |
| 05/24/2006 | EP1659638A1 Power MOS device and corresponding manufacturing method |
| 05/24/2006 | EP1659637A2 Method of manufacturing a power MOS device |
| 05/24/2006 | EP1659636A1 Power MOS semiconductor device |
| 05/24/2006 | EP1659635A2 Bidirectional MOS semiconductor device |
| 05/24/2006 | EP1659634A2 Bipolar transistor and method of manufacturing this transistor |
| 05/24/2006 | EP1659622A2 Field effect transistor and method of manufacturing the same |
| 05/24/2006 | EP1659416A1 Spin detection device and methods for use thereof |
| 05/24/2006 | EP1658641A1 Vertical nanotransistor, method for producing the same and memory assembly |
| 05/24/2006 | EP1658639A2 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
| 05/24/2006 | EP1114467B1 Ferroelectric transistor, its use in a storage cell system and its method of production |
| 05/24/2006 | EP0913859B1 Semiconductor device and method for manufacturing the same |
| 05/24/2006 | DE4241457B4 P-leitendes floatendes Gate aus Poly-Silizium zur Verwendung bei einem Halbleiterbautransistorelement und daraus hergestelltes Flash-E2PROM P-type floating gate made of poly-silicon for use in a Halbleiterbautransistorelement prepared therefrom and flash E2PROM |
| 05/24/2006 | DE19912950B4 Halbleiterbauelement, mit drei aufeinander folgenden Schichten von wechselndem Dotiertyp integrierter Schaltkreis mit einem solchen Halbleiterbauelement und Verfahren zur Herstellung eines solchen Halbleiterbauelements A semiconductor device with three successive layers of alternating doping type integrated circuit with such a semiconductor device and method of manufacturing such a semiconductor device |
| 05/24/2006 | DE19503236B4 Sensor aus einem mehrschichtigen Substrat Sensor of a multilayer substrate |
| 05/24/2006 | DE102004055213A1 Integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen Integrated circuit and method of fabricating an integrated circuit on a semiconductor chip |
| 05/24/2006 | DE102004054806A1 Bipolar transistor has intrinsic base region with an electronically conductive silicide layer in close contact with base layer |
| 05/24/2006 | DE102004054564A1 Halbleitersubstrat und Verfahren zu dessen Herstellung Semiconductor substrate and process for its preparation |
| 05/24/2006 | DE102004045944A1 MOS field effect transistor has auxiliary electrodes formed inside trenches and representing extensions of contact holes for contacting first and second zones and electrically connected to first electrode |
| 05/24/2006 | DE102004016155B3 Kraftsensor mit organischen Feldeffekttransistoren, darauf beruhender Drucksensor, Positionssensor und Fingerabdrucksensor Force sensor with organic field-effect transistors based on it pressure sensor, position sensor and fingerprint sensor |
| 05/24/2006 | DE10040452B4 Durch Feldeffekt steuerbares Halbleiterbauelement Field effect-controllable semiconductor component |
| 05/24/2006 | CN1777997A MOSFET device having geometry that permits frequent body contact |
| 05/24/2006 | CN1777996A High switch speed power device and its manufacturing method |
| 05/24/2006 | CN1777995A Bipolar transistor and method for the production thereof |
| 05/24/2006 | CN1777993A Semiconductor device comprising a field-effect transistor and method of operating the same |