H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2006
08/24/2006	US20060186484 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
08/24/2006	US20060186483 Phase change memory devices employing cell diodes and methods of fabricating the same
08/24/2006	US20060186482 Shared contacts for MOSFET devices
08/24/2006	US20060186481 Non-volatile memory and manufacturing method and operating method thereof
08/24/2006	US20060186478 Method for optimising transistor performance in integrated circuits
08/24/2006	US20060186477 Semiconductor device
08/24/2006	US20060186476 Method of manufacturing thin film transistor
08/24/2006	US20060186475 Thin film transistor having high mobility and high on-current and method for manufacturing the same
08/24/2006	US20060186474 Semiconductor device and method of manufacturing the same
08/24/2006	US20060186471 Manufacturing method for semiconductor device
08/24/2006	US20060186470 Strained transistor with hybrid-strain inducing layer
08/24/2006	US20060186469 Semiconductor device
08/24/2006	US20060186468 Semiconductor device and a method for manufacturing the same
08/24/2006	US20060186467 System and method for making a LDMOS device with electrostatic discharge protection
08/24/2006	US20060186466 Vertical gate semiconductor device and method for fabricating the same
08/24/2006	US20060186465 DMOS device having a trenched bus structure
08/24/2006	US20060186464 Nonvolatile semiconductor memory device having adjacent selection transistors connected together
08/24/2006	US20060186463 Nonvolatile semiconductor memory devices and the fabrication process of them
08/24/2006	US20060186462 Nonvolatile memory device and method of fabricating the same
08/24/2006	US20060186461 Semiconductor device and method of manufacturing the same
08/24/2006	US20060186460 Split gate flash memory device having self-aligned control gate and method of manufacturing the same
08/24/2006	US20060186459 Non-volatile memory and manufacturing method thereof
08/24/2006	US20060186458 Germanium-silicon-carbide floating gates in memories
08/24/2006	US20060186457 Methods for programming a floating body nonvolatile memory
08/24/2006	US20060186456 NVM cell on SOI and method of manufacture
08/24/2006	US20060186455 Nand-type non-volatile memory
08/24/2006	US20060186454 Semiconductor device and fabricating method thereof
08/24/2006	US20060186452 Capacitor of semiconductor device and method of fabricating the same
08/24/2006	US20060186451 Memory device for storing electric charge, and method for fabricating it
08/24/2006	US20060186450 Integrated high voltage capacitor and a method of manufacture therefor
08/24/2006	US20060186449 Semiconductor device and manufacturing method therof
08/24/2006	US20060186448 Semiconductor device memory cell
08/24/2006	US20060186447 Semiconductor memory and method for fabricating the same
08/24/2006	US20060186446 3-Dimensional flash memory device and method of fabricating the same
08/24/2006	US20060186445 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
08/24/2006	US20060186444 Spin polarization amplifying transistor
08/24/2006	US20060186443 Magnetic memory
08/24/2006	US20060186440 Phase change memory device and method of manufacture thereof
08/24/2006	US20060186439 Semiconductor device, a manufacturing method thereof, and a camera
08/24/2006	US20060186435 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
08/24/2006	US20060186434 Vertical-conduction and planar-structure mos device with a double thickness of gate oxide and method for realizing power vertical mos transistors with improved static and dynamic performance and high scaling down density
08/24/2006	US20060186433 Surface-spintronics device
08/24/2006	US20060186429 Semiconductor light emitting device and method of manufacture
08/24/2006	US20060186419 Light-emitting device
08/24/2006	US20060186416 Multiple layer and crystal plane orientation semiconductor substrate
08/24/2006	US20060186415 Thin film semiconductor device, method of manufacturing the same, and display
08/24/2006	US20060186413 Display device and manufacturing method of the same
08/24/2006	US20060186412 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
08/24/2006	US20060186411 Thin film transistor array substrate, manufacturing method thereof, and mask
08/24/2006	US20060186410 Thin film transistor and flat panel display device including the same
08/24/2006	US20060186409 Liquid crystal display device and method for manufacturing the same
08/24/2006	US20060186408 Solid-state imaging device
08/24/2006	US20060186405 Semiconductor device and manufacturing process therefor
08/24/2006	US20060186402 Providing driving current arrangement for OLED device
08/24/2006	US20060186401 Carbonyl-functionalized thiophene compounds and related device structures
08/24/2006	US20060186400 Organic photodiode and method for manufacturing the organic photodiode
08/24/2006	US20060186399 Semiconductor apparatus and fabrication method of the same
08/24/2006	US20060186398 Organic semiconductor device with multiple protective layers and the method of making the same
08/24/2006	US20060186397 Semiconductor substrates having useful and transfer layers
08/24/2006	US20060186396 Optical element and method for manufacturing the same
08/24/2006	US20060186395 Thin-film capacitative element and electronic circuit and electronic equipment including the same
08/24/2006	US20060186394 SnSe-based limited reprogrammable cell
08/24/2006	US20060185725 forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell and forming first and second tunnel junction
08/24/2006	DE4310915B4 Festkörperbildsensor mit hohem Signal-Rauschverhältnis Solid-state image sensor with high signal-to-noise ratio
08/24/2006	DE19929656B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung A non-volatile ferroelectric memory and method for its preparation
08/24/2006	DE19926711B4 Verfahren zur Herstellung eines ferroelektrischen Speicherbauelements A process for producing a ferroelectric memory device
08/24/2006	DE19781675B4 Speicherzellengestaltung mit vertikal gestapelten Überkeuzungen Memory cell design with vertically stacked Überkeuzungen
08/24/2006	DE19606105B4 Back-Source-MOSFET Back-source MOSFET
08/24/2006	DE10336876B4 Speicherzelle mit Nanokristallen oder Nanodots und Verfahren zu deren Herstellung Memory cell with nanocrystals or nanodots and processes for their preparation
08/24/2006	DE10301693B4 MOSFET-Schaltung mit reduzierten Ausgangsspannungs-Schwingungen bei einem Abschaltvorgang MOSFET circuit with reduced output voltage oscillations in a shutdown
08/24/2006	DE102005008354A1 Semiconductor component e.g. trench transistor, has via arranged above trench areas, such that part of overlapping area contacts part of electrode structure by via, where isolation structure areas overlap with each other
08/24/2006	DE102004042758B4 Halbleiterbauteil Semiconductor device
08/24/2006	DE102004009082B4 Leistungs-MOS-FET-Anordnung mit Temperatursensor Power MOS FET device with temperature sensor
08/23/2006	EP1693898A1 Floating body cell memory device and a method for the manufacturing thereof
08/23/2006	EP1693897A2 Semiconductor device
08/23/2006	EP1693896A1 Silicon carbide semiconductor device and its manufacturing method
08/23/2006	EP1693895A1 DIAMOND n-TYPE SEMICONDUCTOR, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR ELEMENT, AND ELECTRON EMITTING ELEMENT
08/23/2006	EP1693214A2 Semiconductor device and ink tank provided with such device
08/23/2006	EP1692729A2 Semiconductor light emitting devices and submounts and methods for forming the same
08/23/2006	EP1692728A2 Nrom flash memory devices on ultrathin silicon
08/23/2006	EP1692727A2 Trench insulated gate field-effect transistor
08/23/2006	EP1692726A2 Trench insulated gate field effect transistor
08/23/2006	EP1692725A2 Trench insulated gate field effect transistor
08/23/2006	EP1692724A1 Semiconductor memory device with increased node capacitance
08/23/2006	EP1692721A1 Pillar cell flash memory technology
08/23/2006	EP1692717A1 REDUCTION OF BORON DIFFUSIVITY IN pFETs
08/23/2006	EP1440182A4 Corrosion-proof pressure transducer
08/23/2006	EP1290059B1 Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method of manufacturing an electronic device
08/23/2006	CN1823427A Thin film transistor and method for manufacturing same
08/23/2006	CN1823426A Field effect transistor and method for manufacturing same
08/23/2006	CN1823425A Organic thin-film transistor and process for fabricating the same, active matrix type display employing it and radio identification tag
08/23/2006	CN1823424A Semiconductor device manufacturing method and semiconductor device
08/23/2006	CN1823423A Semiconductor device and its manufacturing method
08/23/2006	CN1823422A Insulated gate power semiconductor devices
08/23/2006	CN1823421A Vertical semiconductor device
08/23/2006	CN1823420A Trenched DMOS devices and methods and processes for making same
08/23/2006	CN1823419A 半导体器件 Semiconductor devices
08/23/2006	CN1823412A Array of nanoscopic MOSFET transistors and fabrication methods
08/23/2006	CN1823408A ESD protection device and method of making the same
08/23/2006	CN1823400A Nitride semiconductor element and method for manufacturing thereof

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