Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2007
06/28/2007US20070145497 Semiconductor device
06/28/2007US20070145496 Semiconductor device and method of manufacturing the same
06/28/2007US20070145495 Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance
06/28/2007US20070145494 Semiconductor device and method for manufacturing the same
06/28/2007US20070145493 Semiconductor device and manufacturing method thereof
06/28/2007US20070145491 Semiconductor device and method of manufacture
06/28/2007US20070145490 Semiconductor device and method for manufacturing the same
06/28/2007US20070145489 Design of high-frequency substrate noise isolation in BiCMOS technology
06/28/2007US20070145488 Semiconductor device and manufacturing method thereof
06/28/2007US20070145487 Multigate device with recessed strain regions
06/28/2007US20070145486 Semiconductor memory device and method of manufacturing the same
06/28/2007US20070145479 Semiconductor device having super junction structure
06/28/2007US20070145478 High voltage semiconductor device and method of manufacturing the same
06/28/2007US20070145477 Transistor having a protruded drain
06/28/2007US20070145476 Semiconductor device
06/28/2007US20070145475 Semiconductor device
06/28/2007US20070145473 Semiconductor device and electronic control unit using the same
06/28/2007US20070145472 Flash memory cell including dual tunnel oxide layer and method of manufacturing the same
06/28/2007US20070145471 Semiconductor device and method of manufacturing the same
06/28/2007US20070145470 Semiconductor device and method of manufacturing the same
06/28/2007US20070145469 Split gate type non-volatile memory device
06/28/2007US20070145468 Quantum dot nonvolatile transistor
06/28/2007US20070145467 EEPROMs with Trenched Active Region Structures and Methods of Fabricating and Operating Same
06/28/2007US20070145466 Flash memory device and method for manufacturing the same
06/28/2007US20070145465 Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
06/28/2007US20070145464 Random access memory device utilizing a vertically oriented select transistor
06/28/2007US20070145463 PCRAM device with switching glass layer
06/28/2007US20070145462 Low tunnel barrier insulators
06/28/2007US20070145461 Floating gate of flash memory device and method of forming the same
06/28/2007US20070145460 Flash memory device and method of manufacturing the same
06/28/2007US20070145459 EEPROM devices and methods of operating and fabricating the same
06/28/2007US20070145458 Semiconductor device and manufacturing method thereof
06/28/2007US20070145457 System and Method of Forming A Split-Gate Flash Memory Structure
06/28/2007US20070145456 Flash memory device and method of manufacturing the same
06/28/2007US20070145455 Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate
06/28/2007US20070145453 Dielectric layer for electronic devices
06/28/2007US20070145452 Integrated Circuit Devices Including A Capacitor
06/28/2007US20070145451 Semiconductor device having vertical-type channel and method for fabricating the same
06/28/2007US20070145450 DRAM cell design with folded digitline sense amplifier
06/28/2007US20070145449 Capacitor to be incorporated in wiring substrate, method for manufacturing the capacitor, and wiring substrate
06/28/2007US20070145448 Nonvolatile semiconductor memory device and method of manufacturing the same
06/28/2007US20070145436 Thin film transistor substrate of liquid crystal display and method for fabricating same
06/28/2007US20070145435 Mos varactor
06/28/2007US20070145434 Semiconductor device
06/28/2007US20070145433 Semiconductor device
06/28/2007US20070145432 Semiconductor device
06/28/2007US20070145431 Fin-FET having GAA structure and methods of fabricating the same
06/28/2007US20070145430 CMOS device with asymmetric gate strain
06/28/2007US20070145429 Structure and method for a fast recovery rectifier structure
06/28/2007US20070145428 Isolation trench of a semiconductor device
06/28/2007US20070145427 Solid-state image sensor
06/28/2007US20070145418 Devices without current crowding effect at the finger's ends
06/28/2007US20070145417 High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separation
06/28/2007US20070145416 Semiconductor device
06/28/2007US20070145415 High-frequency semiconductor device
06/28/2007US20070145412 Heterojunction bipolar transistor and manufacturing method thereof
06/28/2007US20070145411 Trench polysilicon diode
06/28/2007US20070145409 Five channel fin transistor and method for fabricating the same
06/28/2007US20070145408 HF control bidirectional switch
06/28/2007US20070145407 Thyristor and method of manufacture
06/28/2007US20070145390 Nitride-based semiconductor device
06/28/2007US20070145377 Semiconductor device and method for manufacturing same
06/28/2007US20070145376 Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate
06/28/2007US20070145375 Method of manufacturing nanowire, method of manufacturing a semiconductor apparatus including nanowire and semiconductor apparatus formed from the same
06/28/2007US20070145374 Thin film transistor for display panel
06/28/2007US20070145373 Epitaxial imprinting
06/28/2007US20070145372 Semiconductor device, and electronic apparatus
06/28/2007US20070145371 Thin-film transistor
06/28/2007US20070145370 Electro-optic device, method for manufacturing the same, and electronic apparatus
06/28/2007US20070145369 Array substrate for liquid crystal display device and method of fabricating the same
06/28/2007US20070145367 Three-dimensional integrated circuit structure
06/28/2007US20070145362 Passive electronic devices
06/28/2007US20070145361 Organic semiconductor material and organic electronic device
06/28/2007US20070145360 Organic electronic device having dual emitter dopants
06/28/2007US20070145359 Materials for organic thin film transistors
06/28/2007US20070145358 Transparent conductor and transparent conductive material
06/28/2007US20070145357 Thin-film transistor
06/28/2007US20070145356 Carbon nanotube interdigitated sensor
06/28/2007US20070145355 Doped organic semiconductor material
06/28/2007US20070145354 Organic thin-film transistors
06/28/2007US20070145353 Phenanthroline derivative and light emitting element and light emitting device using the same
06/28/2007US20070145350 Display apparatus
06/28/2007US20070145349 Light emitting device
06/28/2007US20070145348 Quantum information processing device and method
06/28/2007US20070145347 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
06/28/2007US20070145346 Connection electrode for phase change material, associated phase change memory element, and associated production process
06/28/2007US20070145345 Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements
06/28/2007US20070145344 Resistance-change nanocrystal memory
06/28/2007DE19605670B4 Aktivmatrixanzeigegerät Active matrix display device
06/28/2007DE112005000223T5 Verbesserte Betriebsweise mit III-nitrierten Feldeffekttransistoren Improved operation with III-nitrided field-effect transistors
06/28/2007DE10217935B4 Halbleiterbauteil Semiconductor device
06/28/2007DE10208881B4 Selbstjustierendes Verfahren zur Herstellung eines Doppel-Gate MOSFET sowie durch dieses Verfahren hergestellter Doppel-Gate MOSFET Self-aligning method of manufacturing a dual gate MOSFET, and produced by this process double-gate MOSFET
06/28/2007DE102006060374A1 Halbleiterbauteil Semiconductor device
06/28/2007DE102005061263A1 Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben The same semiconductor wafer substrate for power semiconductor devices and methods for preparing
06/28/2007DE102005060702A1 Vertical transistor to operate as a metal oxide semiconductor (MOS) transistor has a semiconductor substrate, a semiconductor layer with specific resistance, drains and a mesa region
06/28/2007DE102005059231A1 Interconnecting-semiconductor field effect transistor manufacturing method for optoelectronic device, involves forming fin-structure by structuring two layers and covering layer, and forming gate region on region of side wall of structure
06/28/2007DE102005008495A1 MIS-Bauteil mit einem implantierten Drain-Drift-Bereich MIS device having an implanted drain-drift region
06/28/2007CA2634493A1 Capacitor based transformer
06/27/2007EP1801887A1 Semiconductor device having a surface conducting channel and method of forming
06/27/2007EP1801886A2 Structure and method for surface-passivated zinc-oxide based sensor
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