Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2007
09/27/2007DE10357796B4 Stossstromfestes Leistungshalbleiterbauelement und Verfahren zu seiner Herstellung Surge current resistant power semiconductor device and method for its production
09/27/2007DE10333315B4 Leistungshalbleitermodul The power semiconductor module
09/27/2007DE10242145B4 Halbleiterbauelement mit lokaler Zwischenverbindungsschicht und Herstellungsverfahren A semiconductor device comprising a local interconnect layer and manufacturing processes
09/27/2007DE102006013077A1 Leistungshalbleiterbauelement mit Sekundärpassivierungsschicht und zugehöriges Herstellungsverfahren Power semiconductor component with Sekundärpassivierungsschicht and associated production method
09/27/2007DE102006011283B3 Trench power transistor e.g. lamellar trench power transistor, manufacturing method, involves selecting implantation energy and dose so that principal part of dose is placed below source electrode, and pinch resistance of contact is reduced
09/27/2007CA2646325A1 Spintronic devices with constrained spintronic dopant and associated methods
09/27/2007CA2582632A1 A gettering method and a wafer using the same
09/26/2007EP1837917A1 Nonvolatile semiconductor memory device
09/26/2007EP1837916A1 Method of manufacturing a transistor having a channel comprising germanium
09/26/2007EP1837915A2 Semiconductors
09/26/2007EP1837913A2 Display apparatus and method of manufacturing thereof
09/26/2007EP1837900A2 Nonvolatile semiconductor memory device
09/26/2007EP1836732A2 METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
09/26/2007EP1836731A2 Organic thin film transistor
09/26/2007EP1836730A1 Thin-film transistor having semiconducting multi-cation oxide channel and methods
09/26/2007EP1836727A1 Thin film transistor array devices
09/26/2007EP1597194A4 Templated cluster assembled wires
09/26/2007EP1540720A4 A semiconductor device and method of fabricating a semiconductor device
09/26/2007EP1419521B1 Xe preamorphizing implantation
09/26/2007EP1299900A4 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
09/26/2007EP1284019B1 Semiconductor power component
09/26/2007EP1281200B1 Method of making a semiconductor device having a recessed insulating layer of varying thickness
09/26/2007EP1093667B1 Method of manufacturing a semiconductor device comprising a field effect transistor
09/26/2007CN101044628A Method of forming a transistor having a dual layer dielectric
09/26/2007CN101044627A 半导体器件 Semiconductor devices
09/26/2007CN101044626A Method for forming gate insulating film, semiconductor device and computer recording medium
09/26/2007CN101044625A Method of forming a solution processed transistor having a multilayer dielectric
09/26/2007CN101044618A Device and method for fabricating double-sided soi wafer scale package with through via connections
09/26/2007CN101044615A Dram cells with vertical u-shaped transistor
09/26/2007CN101044608A Metal-oxide-semiconductor device with a doped titanate body
09/26/2007CN101044605A Semiconductor device and its making method
09/26/2007CN101044592A Packaging decie and forming method thereof
09/26/2007CN101043063A Nitride semiconductor device and method of manufacturing same
09/26/2007CN101043057A Variable condenser
09/26/2007CN101043056A Nonvolatile memory device and method of forming the same
09/26/2007CN101043055A Method for producing field effect transistor and semiconductor structure
09/26/2007CN101043054A Semiconductor device and method of manufacturing the same
09/26/2007CN101043053A Power semiconductor device having improved performance and method
09/26/2007CN101043052A Semiconductor devices and methods of manufacture thereof
09/26/2007CN101043051A Semiconductor memory device and manufacturing method for the same
09/26/2007CN101043050A Semiconductor device with increased channel area and decreased leakage current
09/26/2007CN101043049A Layer-stacked wiring and semiconductor device using same and method for manufacturing semiconductor device
09/26/2007CN101043040A Thin-film transistor component with symmetrical characteristic
09/26/2007CN101043039A Nonvolatile semiconductor memory device
09/26/2007CN101043038A Nonvolatile semiconductor memory device
09/26/2007CN101043037A Semiconductor device and a method of manufacturing the same
09/26/2007CN101043034A Capacitance structure
09/26/2007CN101043031A Semiconductor device with substantial driving current and decreased junction leakage current
09/26/2007CN101043027A Anti-fuse and stylization method thereof
09/26/2007CN101043026A Crystalline semiconductor film, semiconductor device and method for manufacturing thereof
09/26/2007CN101043003A Process for fabricating a semiconductor device with metallic gate and semiconductor device
09/26/2007CN101042511A Display component using laser mask crystal
09/26/2007CN100340010C Memory cell with an asymmetrical area
09/26/2007CN100340007C Nitride semiconductor light emitting device and method of manufacturing the same
09/26/2007CN100340006C Method for forming semiconductor device and transistor having a plurality of silicided polysilicon structures
09/26/2007CN100340005C Semiconductor assembly ,cumulative mode multiple gate transistor and its manufacturing method
09/26/2007CN100340004C 半导体装置 Semiconductor device
09/26/2007CN100340001C Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
09/26/2007CN100340000C Memonic semiconductor storage
09/26/2007CN100339997C Semiconductor device including nonvolatile memory and method for fabricating the same
09/26/2007CN100339996C Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory,
09/26/2007CN100339995C Method of fabricating a semiconductor device
09/26/2007CN100339994C 半导体器件 Semiconductor devices
09/26/2007CN100339993C Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same
09/26/2007CN100339990C Active matrix electroluminescent display devices, and their manufacture
09/26/2007CN100339989C Semiconductor device
09/26/2007CN100339988C Electrostatic discharge protective circuit of duplication structure
09/26/2007CN100339975C Integrated semiconductor structure and strained insulated silicon mfg. method and strained insulated silicon
09/26/2007CN100339963C Method for manufacturing a semiconductor device
09/26/2007CN100339961C Integrated circuit device and method therefor
09/26/2007CN100339959C Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
09/26/2007CN100339958C Producing method of semiconductor device and producing system of semiconductor device
09/26/2007CN100339949C Groove capacitor and its manufacture
09/26/2007CN100339944C Method for crystallizing amorphous silicon film
09/26/2007CN100339939C Semiconductor device and manufacture thereof, electro-optic apparatus and electronic machine
09/26/2007CN100339867C Method and structure to isolate a qubit from the environment
09/26/2007CN100339756C Multilayer diffused obstacle layer structure and producing method for thin-membrane transistor liquid-crystal dispalying device
09/26/2007CN100339755C Liquid crystal display device
09/26/2007CN100339746C Semi-reflecting and semi-penetrating liquid-crystal displaying device
09/26/2007CN100339743C Active-matrix substrate and electromagnetic wave detector
09/25/2007US7274923 Wireless communication system
09/25/2007US7274420 Method for manufacturing reflection-transmission type liquid crystal display device
09/25/2007US7274362 Active matrix display device
09/25/2007US7274349 Electronic device and electronic apparatus
09/25/2007US7274320 Analog/digital converting device
09/25/2007US7274246 Switching circuit using multiple common-drain JFETs for good heat dissipation capability and small PCB layout area
09/25/2007US7274243 Adaptive gate drive for switching devices of inverter
09/25/2007US7274224 Semiconductor device and camera using same
09/25/2007US7274108 Semiconductor chip capable of implementing wire bonding over active circuits
09/25/2007US7274107 Semiconductor device
09/25/2007US7274098 Chip packaging structure without leadframe
09/25/2007US7274088 Flip-chip semiconductor package with lead frame as chip carrier and fabrication method thereof
09/25/2007US7274085 Capacitor structure
09/25/2007US7274084 Enhanced PFET using shear stress
09/25/2007US7274083 Semiconductor device with surge current protection and method of making the same
09/25/2007US7274082 Chemical sensor using chemically induced electron-hole production at a schottky barrier
09/25/2007US7274081 Front-illuminated-type photodiode array
09/25/2007US7274080 MgO-based tunnel spin injectors
09/25/2007US7274079 Sensor design and process
09/25/2007US7274077 Trench transistor
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