Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
08/2000
08/29/2000US6111264 Small pores defined by a disposable internal spacer for use in chalcogenide memories
08/29/2000US6111254 Infrared radiation detector
08/29/2000US6111247 Passivation protection of sensor devices having a color filter on non-sensor portion
08/29/2000US6111245 Low voltage reverse bias arrangement for an active pixel sensor
08/29/2000US6111184 Interchangeable pickup, electric stringed instrument and system for an electric stringed musical instrument
08/29/2000US6110845 Oxygen ions of a high concentration are implanted into a silicon substrate to form a high-concentration oxygen implanted layer, heating the substrate to form oxide layer, then pluse laser annealing melts and recrystallizes substrate
08/29/2000US6110822 Method for forming a polysilicon-interconnect contact in a TFT-SRAM
08/29/2000US6110802 Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate
08/29/2000US6110798 Method of fabricating an isolation structure on a semiconductor substrate
08/29/2000US6110792 Method for making DRAM capacitor strap
08/29/2000US6110791 Method of making a semiconductor variable capacitor
08/29/2000US6110788 Surface channel MOS transistors, methods for making the same, and semiconductor devices containing the same
08/29/2000US6110774 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
08/29/2000US6110773 Static random access memory device manufacturing method
08/29/2000US6110772 Semiconductor integrated circuit and manufacturing method thereof
08/29/2000US6110770 Semiconductor and process for fabricating the same
08/29/2000US6110769 SOI (silicon on insulator) device and method for fabricating the same
08/29/2000US6110767 Reversed MOS
08/29/2000US6110764 Method of manufacturing an assembly with different types of high-voltage metal-oxide-semiconductor devices
08/29/2000US6110759 Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure
08/29/2000US6110753 Bit lines have narrower widths and interval than wavelength of the exposure light without sacrificing the productivity; capable of avoiding the short circuit and the disconnection of the bit lines without sacrificing the productivity
08/29/2000US6110647 Method of manufacturing semiconductor device
08/29/2000US6110531 Gasifying a generated mist to form a gasified precursor comprising a bismuth-containing organic compound, a metal polyalkoxide compound, a lead-containing organic compound, oxidizing with oxygen gas to form a superlattice thin film
08/29/2000US6110523 Method of manufacturing a semiconductor memory device
08/29/2000US6110392 Process for reducing surface roughness of superconductor integrated circuit having a ground plane of niobium nitride of improved smoothness
08/29/2000US6110391 Method of manufacturing a bonding substrate
08/29/2000US6110221 Repeater blocks adjacent clusters of circuits
08/29/2000US6109207 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
08/29/2000CA2192631C Fabrication process of soi substrate
08/27/2000WO2000024058A1 Integrated circuit chip made secure against the action of electromagnetic radiation
08/26/2000CA2298318A1 Inductive component, integrated transformer, intended to be incorporated into a radio frequency circuit, and integrated circuit associated with the said inductive component or integrated transformer
08/24/2000WO2000049662A1 Igbt with pn insulation
08/24/2000WO2000049661A1 Insulated-gate field-effect semiconductor device
08/24/2000WO2000049660A1 Iridium oxide diffusion barrier between local interconnect layer and thin film of layered superlattice material
08/24/2000WO2000049659A1 Microelectronic device for storing information and method thereof
08/24/2000WO2000049654A1 Method for producing a dram cell with a trench capacitor
08/24/2000WO2000049651A1 Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors
08/24/2000WO2000049650A1 Iridium etching methods for anisotrophic profile
08/24/2000WO2000049646A1 Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
08/24/2000WO2000049631A1 Capacitor
08/24/2000WO2000049449A1 Lens system for photodetectors
08/24/2000WO2000049202A2 Improved etching methods for anisotropic platinum profile
08/24/2000WO2000013236A3 Layered dielectric on silicon carbide semiconductor structures
08/24/2000WO1999039554A3 Embedded energy storage device
08/24/2000DE19906384A1 Insulated gate bipolar transistor with electric pn-junction insulation of adjacent components
08/24/2000DE10003014A1 SOI structure, for merged logic DRAMs, is produced by forming a protective side wall over a trench side wall oxide layer prior to trench filling
08/24/2000DE10002809A1 Variable resistor for signal transmission line, has lower wiring layer connected with resistance layer by contact group which encloses a portion for connecting upper wiring layer and resistance layer of element
08/23/2000EP1030370A2 Integrated semiconductor memory device with self-buffering of supply voltages
08/23/2000EP1030363A2 Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors
08/23/2000EP1030362A2 Method of forming trench capacitor DRAM cell
08/23/2000EP1030311A1 Decoder connection for memory chips with long bit lines
08/23/2000EP1030203A2 Image input apparatus
08/23/2000EP1029369A1 Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same
08/23/2000EP1029364A1 Memory device having a crested tunnel barrier
08/23/2000EP1029356A1 Reduced area imaging devices incorporated within surgical instruments
08/23/2000EP1029355A1 Asic routing architecture
08/23/2000EP0897596A4 Electro-optical imaging detector array with two axis image motion compensation
08/23/2000EP0648377B1 Miniband transport quantum well detector
08/23/2000CN2393183Y Portable flash-lamp type direciton indicator
08/23/2000CN1264489A Electrical device comprising conductive polymer
08/23/2000CN1264244A Imaging device and method for obtaining image
08/23/2000CN1264180A Semiconductor device and manufacture method
08/23/2000CN1264179A Three-layer polycrystal cilicon inserted non-volatile memory unit and manufacture method thereof
08/23/2000CN1264178A 半导体装置 Semiconductor device
08/23/2000CN1264170A Dyamic RAM
08/23/2000CN1264166A Manufacture of shallow junction semiconductor device
08/23/2000CN1264160A Method for integrated substrate contact on insulator silicon chip with shallow ridges insulation technology
08/23/2000CN1264157A Insulator base silicon structure of plane dense picture composition and manufacture technology thereof
08/23/2000CN1264156A Compound element, substrate laminate and separation method, laminate transfer and substrate manufacture method
08/23/2000CN1055790C Semiconductor device and method for manufacturing the same
08/23/2000CN1055784C Semiconductor device and method for manufacturing the same
08/22/2000US6108461 Contact image sensor and method of manufacturing the same
08/22/2000US6108262 Static memory cell having independent data holding voltage
08/22/2000US6108246 Semiconductor memory device
08/22/2000US6108239 High-density nonvolatile memory cell
08/22/2000US6108230 Semiconductor device with data line arrangement for preventing noise interference
08/22/2000US6108229 High performance embedded semiconductor memory device with multiple dimension first-level bit-lines
08/22/2000US6108181 Electrostatic discharge (ESD) circuit
08/22/2000US6107874 Semiconductor integrated circuit device produced from master slice and having operation mode easily changeable after selection on master slice
08/22/2000US6107869 Semiconductor integrated circuit
08/22/2000US6107865 VSS switching scheme for battery backed-up semiconductor devices
08/22/2000US6107864 Charge pump circuit
08/22/2000US6107862 Charge pump circuit
08/22/2000US6107836 Semiconductor integrated circuit device having power reduction mechanism
08/22/2000US6107736 Organic electroluminescent display device and method of fabrication
08/22/2000US6107734 Organic EL light emitting element with light emitting layers and intermediate conductive layer
08/22/2000US6107673 Series connection of diodes
08/22/2000US6107670 Contact structure of semiconductor device
08/22/2000US6107668 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same
08/22/2000US6107666 High density ROM and a method of making the same
08/22/2000US6107665 Semiconductor device having a fixed state by injected impurity
08/22/2000US6107663 Circuit and method for gate-body structures in CMOS technology
08/22/2000US6107659 Nonvolatile semiconductor memory device operable at high speed with low power supply voltage while preventing overerasing/overwriting
08/22/2000US6107658 Non-volatile semiconductor memory device
08/22/2000US6107657 Semiconductor device having capacitor and manufacturing method thereof
08/22/2000US6107656 Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors
08/22/2000US6107655 Active pixel image sensor with shared amplifier read-out
08/22/2000US6107650 Insulated gate semiconductor device and manufacturing method thereof
08/22/2000US6107641 Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
08/22/2000US6107160 MOSFET having buried shield plate for reduced gate/drain capacitance