Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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08/29/2000 | US6111264 Small pores defined by a disposable internal spacer for use in chalcogenide memories |
08/29/2000 | US6111254 Infrared radiation detector |
08/29/2000 | US6111247 Passivation protection of sensor devices having a color filter on non-sensor portion |
08/29/2000 | US6111245 Low voltage reverse bias arrangement for an active pixel sensor |
08/29/2000 | US6111184 Interchangeable pickup, electric stringed instrument and system for an electric stringed musical instrument |
08/29/2000 | US6110845 Oxygen ions of a high concentration are implanted into a silicon substrate to form a high-concentration oxygen implanted layer, heating the substrate to form oxide layer, then pluse laser annealing melts and recrystallizes substrate |
08/29/2000 | US6110822 Method for forming a polysilicon-interconnect contact in a TFT-SRAM |
08/29/2000 | US6110802 Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate |
08/29/2000 | US6110798 Method of fabricating an isolation structure on a semiconductor substrate |
08/29/2000 | US6110792 Method for making DRAM capacitor strap |
08/29/2000 | US6110791 Method of making a semiconductor variable capacitor |
08/29/2000 | US6110788 Surface channel MOS transistors, methods for making the same, and semiconductor devices containing the same |
08/29/2000 | US6110774 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
08/29/2000 | US6110773 Static random access memory device manufacturing method |
08/29/2000 | US6110772 Semiconductor integrated circuit and manufacturing method thereof |
08/29/2000 | US6110770 Semiconductor and process for fabricating the same |
08/29/2000 | US6110769 SOI (silicon on insulator) device and method for fabricating the same |
08/29/2000 | US6110767 Reversed MOS |
08/29/2000 | US6110764 Method of manufacturing an assembly with different types of high-voltage metal-oxide-semiconductor devices |
08/29/2000 | US6110759 Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure |
08/29/2000 | US6110753 Bit lines have narrower widths and interval than wavelength of the exposure light without sacrificing the productivity; capable of avoiding the short circuit and the disconnection of the bit lines without sacrificing the productivity |
08/29/2000 | US6110647 Method of manufacturing semiconductor device |
08/29/2000 | US6110531 Gasifying a generated mist to form a gasified precursor comprising a bismuth-containing organic compound, a metal polyalkoxide compound, a lead-containing organic compound, oxidizing with oxygen gas to form a superlattice thin film |
08/29/2000 | US6110523 Method of manufacturing a semiconductor memory device |
08/29/2000 | US6110392 Process for reducing surface roughness of superconductor integrated circuit having a ground plane of niobium nitride of improved smoothness |
08/29/2000 | US6110391 Method of manufacturing a bonding substrate |
08/29/2000 | US6110221 Repeater blocks adjacent clusters of circuits |
08/29/2000 | US6109207 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility |
08/29/2000 | CA2192631C Fabrication process of soi substrate |
08/27/2000 | WO2000024058A1 Integrated circuit chip made secure against the action of electromagnetic radiation |
08/26/2000 | CA2298318A1 Inductive component, integrated transformer, intended to be incorporated into a radio frequency circuit, and integrated circuit associated with the said inductive component or integrated transformer |
08/24/2000 | WO2000049662A1 Igbt with pn insulation |
08/24/2000 | WO2000049661A1 Insulated-gate field-effect semiconductor device |
08/24/2000 | WO2000049660A1 Iridium oxide diffusion barrier between local interconnect layer and thin film of layered superlattice material |
08/24/2000 | WO2000049659A1 Microelectronic device for storing information and method thereof |
08/24/2000 | WO2000049654A1 Method for producing a dram cell with a trench capacitor |
08/24/2000 | WO2000049651A1 Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors |
08/24/2000 | WO2000049650A1 Iridium etching methods for anisotrophic profile |
08/24/2000 | WO2000049646A1 Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material |
08/24/2000 | WO2000049631A1 Capacitor |
08/24/2000 | WO2000049449A1 Lens system for photodetectors |
08/24/2000 | WO2000049202A2 Improved etching methods for anisotropic platinum profile |
08/24/2000 | WO2000013236A3 Layered dielectric on silicon carbide semiconductor structures |
08/24/2000 | WO1999039554A3 Embedded energy storage device |
08/24/2000 | DE19906384A1 Insulated gate bipolar transistor with electric pn-junction insulation of adjacent components |
08/24/2000 | DE10003014A1 SOI structure, for merged logic DRAMs, is produced by forming a protective side wall over a trench side wall oxide layer prior to trench filling |
08/24/2000 | DE10002809A1 Variable resistor for signal transmission line, has lower wiring layer connected with resistance layer by contact group which encloses a portion for connecting upper wiring layer and resistance layer of element |
08/23/2000 | EP1030370A2 Integrated semiconductor memory device with self-buffering of supply voltages |
08/23/2000 | EP1030363A2 Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors |
08/23/2000 | EP1030362A2 Method of forming trench capacitor DRAM cell |
08/23/2000 | EP1030311A1 Decoder connection for memory chips with long bit lines |
08/23/2000 | EP1030203A2 Image input apparatus |
08/23/2000 | EP1029369A1 Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same |
08/23/2000 | EP1029364A1 Memory device having a crested tunnel barrier |
08/23/2000 | EP1029356A1 Reduced area imaging devices incorporated within surgical instruments |
08/23/2000 | EP1029355A1 Asic routing architecture |
08/23/2000 | EP0897596A4 Electro-optical imaging detector array with two axis image motion compensation |
08/23/2000 | EP0648377B1 Miniband transport quantum well detector |
08/23/2000 | CN2393183Y Portable flash-lamp type direciton indicator |
08/23/2000 | CN1264489A Electrical device comprising conductive polymer |
08/23/2000 | CN1264244A Imaging device and method for obtaining image |
08/23/2000 | CN1264180A Semiconductor device and manufacture method |
08/23/2000 | CN1264179A Three-layer polycrystal cilicon inserted non-volatile memory unit and manufacture method thereof |
08/23/2000 | CN1264178A 半导体装置 Semiconductor device |
08/23/2000 | CN1264170A Dyamic RAM |
08/23/2000 | CN1264166A Manufacture of shallow junction semiconductor device |
08/23/2000 | CN1264160A Method for integrated substrate contact on insulator silicon chip with shallow ridges insulation technology |
08/23/2000 | CN1264157A Insulator base silicon structure of plane dense picture composition and manufacture technology thereof |
08/23/2000 | CN1264156A Compound element, substrate laminate and separation method, laminate transfer and substrate manufacture method |
08/23/2000 | CN1055790C Semiconductor device and method for manufacturing the same |
08/23/2000 | CN1055784C Semiconductor device and method for manufacturing the same |
08/22/2000 | US6108461 Contact image sensor and method of manufacturing the same |
08/22/2000 | US6108262 Static memory cell having independent data holding voltage |
08/22/2000 | US6108246 Semiconductor memory device |
08/22/2000 | US6108239 High-density nonvolatile memory cell |
08/22/2000 | US6108230 Semiconductor device with data line arrangement for preventing noise interference |
08/22/2000 | US6108229 High performance embedded semiconductor memory device with multiple dimension first-level bit-lines |
08/22/2000 | US6108181 Electrostatic discharge (ESD) circuit |
08/22/2000 | US6107874 Semiconductor integrated circuit device produced from master slice and having operation mode easily changeable after selection on master slice |
08/22/2000 | US6107869 Semiconductor integrated circuit |
08/22/2000 | US6107865 VSS switching scheme for battery backed-up semiconductor devices |
08/22/2000 | US6107864 Charge pump circuit |
08/22/2000 | US6107862 Charge pump circuit |
08/22/2000 | US6107836 Semiconductor integrated circuit device having power reduction mechanism |
08/22/2000 | US6107736 Organic electroluminescent display device and method of fabrication |
08/22/2000 | US6107734 Organic EL light emitting element with light emitting layers and intermediate conductive layer |
08/22/2000 | US6107673 Series connection of diodes |
08/22/2000 | US6107670 Contact structure of semiconductor device |
08/22/2000 | US6107668 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same |
08/22/2000 | US6107666 High density ROM and a method of making the same |
08/22/2000 | US6107665 Semiconductor device having a fixed state by injected impurity |
08/22/2000 | US6107663 Circuit and method for gate-body structures in CMOS technology |
08/22/2000 | US6107659 Nonvolatile semiconductor memory device operable at high speed with low power supply voltage while preventing overerasing/overwriting |
08/22/2000 | US6107658 Non-volatile semiconductor memory device |
08/22/2000 | US6107657 Semiconductor device having capacitor and manufacturing method thereof |
08/22/2000 | US6107656 Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors |
08/22/2000 | US6107655 Active pixel image sensor with shared amplifier read-out |
08/22/2000 | US6107650 Insulated gate semiconductor device and manufacturing method thereof |
08/22/2000 | US6107641 Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
08/22/2000 | US6107160 MOSFET having buried shield plate for reduced gate/drain capacitance |