Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
09/2000
09/26/2000US6124851 Electronic book with multiple page displays
09/26/2000US6124752 Semiconductor integrated circuit device controlling the threshold value thereof for power reduction at standby mode
09/26/2000US6124749 Semiconductor circuit device with reduced power consumption
09/26/2000US6124729 Field programmable logic arrays with vertical transistors
09/26/2000US6124628 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
09/26/2000US6124625 Chip decoupling capacitor
09/26/2000US6124624 Q inductor with multiple metallization levels
09/26/2000US6124623 Semiconductor device having channel stop regions
09/26/2000US6124618 Dynamic threshold MOSFET using accumulated base BJT level shifter for low voltage sub-quarter micron transistor
09/26/2000US6124617 Semiconductor device and method of fabricating same
09/26/2000US6124616 Integrated circuitry comprising halo regions and LDD regions
09/26/2000US6124615 Stacked semiconductor structure for high integration of an integrated circuit with junction devices
09/26/2000US6124614 Si/SiGe MOSFET and method for fabricating the same
09/26/2000US6124613 SOI-MOS field effect transistor that withdraws excess carrier through a carrier path silicon layer
09/26/2000US6124609 Split gate flash memory with buried source to shrink cell dimension and increase coupling ratio
09/26/2000US6124608 Non-volatile trench semiconductor device having a shallow drain region
09/26/2000US6124606 Method of making a large area imager with improved signal-to-noise ratio
09/26/2000US6124604 Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance
09/26/2000US6124603 Complementary integrated circuit having N channel TFTs and P channel TFTs
09/26/2000US6124602 Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit
09/26/2000US6124206 Reduced pad erosion
09/26/2000US6124189 Metallization structure and method for a semiconductor device
09/26/2000US6124187 Method of fabricating semiconductor device
09/26/2000US6124185 Method for producing a semiconductor device using delamination
09/26/2000US6124180 BiCMOS process for counter doped collector
09/26/2000US6124173 Method for improved storage node isolation
09/26/2000US6124170 Method for making flash memory
09/26/2000US6124169 Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories
09/26/2000US6124168 Method for forming an asymmetric floating gate overlap for improved device performance in buried bit-line devices
09/26/2000US6124163 Integrated chip multiplayer decoupling capacitors
09/26/2000US6124160 Semiconductor device and method for manufacturing the same
09/26/2000US6124157 Integrated non-volatile and random access memory and method of forming the same
09/26/2000US6124156 Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions
09/26/2000US6124149 Method of making stackable semiconductor chips to build a stacked chip module
09/26/2000US6122975 CMOS compatible integrated pressure sensor
09/23/2000CA2301988A1 Monolithic integrated circuit with a built-in inductive component and procedure for fabricating such an integrated circuit
09/21/2000WO2000055971A1 Methods and apparatus for bipolar elimination in silicon-on-insulator (soi) domino circuits
09/21/2000WO2000055924A1 Dual-band infrared sensing material array and focal plane array
09/21/2000WO2000055920A1 Semiconductor element and semiconductor device
09/21/2000WO2000055919A1 Low-noise cmos active pixel sensor for imaging arrays with high speed global or row reset
09/21/2000WO2000055918A1 Flash memory cell having a flexible element
09/21/2000WO2000055915A1 Web process interconnect in electronic assemblies
09/21/2000WO2000055906A1 Semiconductor device and method of manufacture thereof
09/21/2000WO2000055905A1 Method for producing a dram structure with buried bit lines or trench capacitors
09/21/2000WO2000055904A1 Dram cell arrangement and method for producing the same
09/21/2000WO2000055896A1 Method of manufacturing a floating gate field-effect transistor
09/21/2000WO2000055889A1 Semiconductor device with transparent link area for silicide applications and fabrication thereof
09/21/2000WO2000055683A1 Method for manufacturing liquid crystal display
09/21/2000WO2000055387A1 Method and apparatus for formation of thin film
09/21/2000WO2000022814A9 Image sensor mounted by mass reflow
09/21/2000DE19910353A1 Halbleiter-Festwertspeicheranordnung mit Substratkontakt und Polysilizium-Überbrückungszelle Only semiconductor memory device with substrate contact and polysilicon bridging cell
09/20/2000EP1037388A2 Process-tolerant integrated circuit design
09/20/2000EP1037284A2 Heterojunction bipolar transistor and method for fabricating the same
09/20/2000EP1037283A1 Semiconductor memory device
09/20/2000EP1037282A1 Semiconductor memory device
09/20/2000EP1037281A1 Capacitor trench-top dielectric for self-aligned device isolation
09/20/2000EP1037280A2 Memory cell layout for reduced interaction between storage nodes and transistors
09/20/2000EP1037279A2 Display architecture supporting integrated power supply means
09/20/2000EP1037278A2 Semiconductor device structure with specifically dimensioned redundancy fuses for laser repair
09/20/2000EP1037274A2 Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure having a limited planar dimension
09/20/2000EP1037273A2 Sense amplifier comprising field effect transistor with short channel length and adjustable threshold voltage
09/20/2000EP1037149A2 Efficient direct cell replacement fault tolerant architecture supporting completey integrated systems with means for direct communication with system operator
09/20/2000EP1037095A2 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same
09/20/2000EP1036417A1 Self-aligned non-volatile contactless memory cell with reduced surface
09/20/2000EP1036415A2 Wafer level integration of multiple optical elements
09/20/2000EP1036412A1 CO-PLANAR Si AND Ge COMPOSITE SUBSTRATE AND METHOD OF PRODUCING SAME
09/20/2000EP1036410A1 New etch process for forming high aspect ratio trenches in silicon
09/20/2000EP1036342A2 Element comprising a filtering structure
09/20/2000EP1012971A4 Forward body bias transistor circuits
09/20/2000EP1004140A4 A well to substrate photodiode for use in a cmos sensor on a salicide process
09/20/2000EP0937302A4 Spin dependent tunneling memory
09/20/2000CN1267406A Forward body bias transistor circuit
09/20/2000CN1267091A Semiconductor IC device
09/20/2000CN1267090A 6 1/4 ff DRAM unit structure with arrangement of four node tied by per bit line and two-stage word line
09/19/2000USRE36875 Semiconductor memory device capable of performing test mode operation and method of operating such semiconductor device
09/19/2000US6122702 Memory cells matrix for a semiconductor integrated microcontroller
09/19/2000US6122215 DRAM having a power supply voltage lowering circuit
09/19/2000US6122196 Semiconductor non-volatile storage device capable of a high speed reading operation
09/19/2000US6122192 Non-volatile semiconductor memory device and fabrication method thereof
09/19/2000US6122190 Semiconductor memory device capable of high speed plural parallel test
09/19/2000US6122188 Non-volatile memory device having multi-bit cell structure and a method of programming same
09/19/2000US6122008 Solid state image pickup device and its driving method using two different periods in a field or frame
09/19/2000US6121950 Control system for display panels
09/19/2000US6121852 Distributed constant element using a magnetic thin film
09/19/2000US6121822 Charge pump circuit for generating a substrated bias
09/19/2000US6121794 High and low voltage compatible CMOS buffer
09/19/2000US6121786 Semiconductor integrated circuit
09/19/2000US6121726 Organic electroluminescent color display having color transmitting layers and fluorescence converting layer with improved structure for color conversion efficiency on a color transmitting layer
09/19/2000US6121687 Input-output circuit cell and semiconductor integrated circuit apparatus
09/19/2000US6121684 Integrated butt contact having a protective spacer
09/19/2000US6121683 Electronic device and integrated circuit
09/19/2000US6121677 Reduced size integrated circuits and methods using test pads located in scribe regions of integrated circuits wafers
09/19/2000US6121675 Semiconductor optical sensing device package
09/19/2000US6121670 Single-chip contact-less read-only memory (ROM) device and the method for fabricating the device
09/19/2000US6121669 Integrated RC filters
09/19/2000US6121668 Semiconductor device provided with conductor electrically connected to conducting region
09/19/2000US6121665 Methods of forming field effect transistors and field effect transistor circuitry
09/19/2000US6121664 Semiconductor memory device
09/19/2000US6121662 3-D CMOS transistors with high ESD reliability
09/19/2000US6121661 Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
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