Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
06/2000
06/28/2000EP1014700A2 Solid-state image sensor and method of driving same
06/28/2000EP1014683A2 Image pickup apparatus
06/28/2000EP1014458A2 Methods of making a full-color organic light-emitting display
06/28/2000EP1014452A1 Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display
06/28/2000EP1014449A1 Semiconductor device and method of producing the same
06/28/2000EP1014448A2 Nonvolatile semiconductor memory device and method of manufacturing the same
06/28/2000EP1014447A1 One-time-programmable memory cell manufactured in CMOS tecnology
06/28/2000EP1014446A1 Semiconductor device protected against analysis
06/28/2000EP1014442A2 Method for forming a dram capacitor and capacitor made thereby
06/28/2000EP1014435A2 Field-effect transistor and method of producing the same
06/28/2000EP1014428A2 Integrated circuit capacitor
06/28/2000EP1014419A1 Imaging apparatus
06/28/2000EP1014381A1 Semiconductor memory device and storage method thereof
06/28/2000EP1014267A1 Method and apparatus for parallel redundancy in semiconductor memories
06/28/2000EP1012971A1 Forward body bias transistor circuits
06/28/2000EP1012883A1 Photodetector circuit
06/28/2000EP1012882A1 Multiple gated mosfet for use in dc-dc converter
06/28/2000EP1012881A1 Method for making an integrated circuit and integrated circuit produced by said method
06/28/2000EP1012879A4 Fabrication method for reduced-dimension integrated circuits
06/28/2000EP1012879A2 Fabrication method for reduced-dimension integrated circuits
06/28/2000EP1012878A1 Reduction of charge loss in nonvolatile memory cells by phosphorous implantation into pecvd nitride/oxynitride films
06/28/2000EP1012547A1 Miniature silicon condenser microphone
06/28/2000CN1258428A Substrate for patterning thin film and surface treatment thereof
06/28/2000CN1258104A Semiconductor device and its mfg. method
06/28/2000CN1258103A Semiconductor device
06/28/2000CN1258102A Semiconductor device and its mfg. method
06/28/2000CN1258101A Elimination of parasitic double-pole effect of insulator substrate epitaxial silicon
06/28/2000CN1258100A Semiconductor device and its mfg. method
06/28/2000CN1258095A Semiconductor structure and mfg. method
06/28/2000CN1258093A Sample processing system
06/28/2000CN1258092A 样品加工系统 Sample processing system
06/28/2000CN1258091A Sample processing system
06/28/2000CN1258079A Semiconductor memory device
06/28/2000CN1258057A Information processing device
06/27/2000US6081916 IC with test cells having separate data and test paths
06/27/2000US6081910 Circuit for allowing a two-pass fuse blow to memory chips combining an array built-in self-test with redundancy capabilities
06/27/2000US6081476 Clock-synchronized read-only memory
06/27/2000US6081474 Semiconductor memory
06/27/2000US6081470 All optics type semiconductor image storage apparatus, and all optics type semiconductor logical operation apparatus
06/27/2000US6081469 Combined precharging and homogenizing circuit
06/27/2000US6081460 Integrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating same
06/27/2000US6081456 Bit line control circuit for a memory array using 2-bit non-volatile memory cells
06/27/2000US6081454 Electrically erasable programmable read-only memory with threshold value controller for data programming
06/27/2000US6081451 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
06/27/2000US6081445 Method to write/read MRAM arrays
06/27/2000US6081444 Static memory adopting layout that enables minimization of cell area
06/27/2000US6081443 Semiconductor memory device
06/27/2000US6081417 Capacitor having a ferroelectric layer
06/27/2000US6081145 Semiconductor integrated circuit device
06/27/2000US6081142 Hold time margin increased semiconductor device and access time adjusting method for same
06/27/2000US6081139 Differential amplifier with lateral bipolar transistor
06/27/2000US6081041 Static random access memory cell having vertically arranged drive transistors to improve the packing density and data stabilization in the cell
06/27/2000US6081040 Semiconductor device having alignment mark
06/27/2000US6081018 Solid state image sensor
06/27/2000US6081016 CMOS device with improved wiring density
06/27/2000US6081015 Semiconductor device having improved protective circuits
06/27/2000US6081013 Semiconductor device having a reduced distance between the input resistor and the internal circuit
06/27/2000US6081012 Semiconductor integrated circuit device
06/27/2000US6081011 CMOS logic gate having buried channel NMOS transistor for semiconductor devices and fabrication method of the same
06/27/2000US6081008 Composite trench-fin capacitors for DRAM
06/27/2000US6081005 Semiconductor integrated circuit
06/27/2000US6081004 BiCMOS compacted logic array
06/27/2000US6081002 Lateral SCR structure for ESD protection in trench isolated technologies
06/27/2000US6081000 AlAs oxide insulating layer between a conductive III-V substrate and an optoelectronic semiconductor device and method of manufacturing thereof
06/27/2000US6080997 Electromagnetic-wave detector
06/27/2000US6080995 Quantum device
06/27/2000US6080987 Infrared-sensitive conductive-polymer coating
06/27/2000US6080984 Semiconductor gamma-ray camera and medical imaging system
06/27/2000US6080979 Transducer sensitive to radiation
06/27/2000US6080928 Photovoltaic element array and method of fabricating the same
06/27/2000US6080652 Method of fabricating a semiconductor device having a multi-layered wiring
06/27/2000US6080633 Method for manufacturing capacitor's lower electrode
06/27/2000US6080632 Method of fabricating a semiconductor memory device having a tree-type capacitor
06/27/2000US6080624 Nonvolatile semiconductor memory and method for manufacturing the same
06/27/2000US6080623 Method of manufacturing capacitive element with a non-doped semiconductor film to minimize native oxide formation
06/27/2000US6080622 Method for fabricating a DRAM cell capacitor including forming a conductive storage node by depositing and etching an insulative layer, filling with conductive material, and removing the insulative layer
06/27/2000US6080620 Method for fabricating interconnection and capacitors of a DRAM using a simple geometry active area, self-aligned etching, and polysilicon plugs
06/27/2000US6080619 Method for manufacturing DRAM capacitor
06/27/2000US6080618 Controllability of a buried device layer
06/27/2000US6080617 Semiconductor device having capacitor and manufacturing method thereof
06/27/2000US6080616 Methods of fabricating memory cells with reduced area capacitor interconnect
06/27/2000US6080615 Method for forming a semiconductor device incorporating a dummy gate electrode
06/27/2000US6080613 Methods of forming integrated circuit memory devices having improved bit line and storage electrode contact regions therein
06/27/2000US6080612 Method of forming an ultra-thin SOI electrostatic discharge protection device
06/27/2000US6080610 Method a CMOS transistor and isolated back electrodes on an SOI substrate
06/27/2000US6080609 Method of making MOSFET structure
06/27/2000US6080601 Method for forming a bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region
06/27/2000US6080594 Forming dielectric; contact hole; plugging
06/27/2000US6080593 Multilayer; dielectric, ferroelectric layer and electrodes
06/27/2000US6080592 Computers
06/27/2000US6080499 Lead zirconium titanate
06/27/2000US6080206 Method of laying out interconnections
06/27/2000US6080205 Semiconductor wafer serving as master-slice with built-in additional current drivers for semi-custom-made integrated circuit device
06/27/2000US6080030 Light emitting device, electric device provided with the light emitting device, and method of producing the light emitting device
06/27/2000CA2179789C Integrated-circuit optical network unit
06/22/2000WO2000036881A1 A luminescent device, and a liquid crystal device incorporating a luminescent device
06/22/2000WO2000036651A1 Integrated circuit with capacitative elements
06/22/2000WO2000036641A1 Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device
06/22/2000WO2000035623A1 Laser processing
06/22/2000WO1999045572A3 Ultra-small capacitor array