Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/2000
10/31/2000USRE36932 Semiconductor memory device operating stably under low power supply voltage with low power consumption
10/31/2000US6141291 Semiconductor memory device
10/31/2000US6141288 Semiconductor memory device allowing change of refresh mode and address switching method therewith
10/31/2000US6141262 Boosting circuit with boosted voltage limited
10/31/2000US6141259 Dynamic random access memory having reduced array voltage
10/31/2000US6141255 1 transistor cell for EEPROM application
10/31/2000US6141252 Voltage regulation for integrated circuit memory
10/31/2000US6141250 Non-volatile semiconductor memory device
10/31/2000US6141246 Memory device with sense amplifier that sets the voltage drop across the cells of the device
10/31/2000US6141245 Impedance control using fuses
10/31/2000US6141242 Low cost mixed memory integration with substantially coplanar gate surfaces
10/31/2000US6141241 Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
10/31/2000US6141239 Static memory cell
10/31/2000US6141238 Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same
10/31/2000US6141237 Ferroelectric non-volatile latch circuits
10/31/2000US6141233 Rectifier circuit device and DC/Dc converter provided with the circuit device
10/31/2000US6141066 Liquid crystal display device with active matrix substrate using source/drain electrode as capacitor conductor
10/31/2000US6141050 MOS image sensor
10/31/2000US6141049 Image generating device having adjustable sensitivity
10/31/2000US6141048 Compact image capture device
10/31/2000US6140980 Head-mounted display system
10/31/2000US6140910 Stabilized polysilicon resistor and a method of manufacturing it
10/31/2000US6140841 High speed interface apparatus
10/31/2000US6140840 Macro cell signal selector and semiconductor integrated circuit including these parts
10/31/2000US6140837 Charge pumps of antifuse programming circuitry powered from high voltage compatibility terminal
10/31/2000US6140834 Semiconductor integrated circuit
10/31/2000US6140805 Source follower NMOS voltage regulator with PMOS switching element
10/31/2000US6140766 Organic EL device
10/31/2000US6140765 Organic electroluminescent display panel having a plurality of ramparts formed on the first and second bus electrodes
10/31/2000US6140764 Organic electroluminescent apparatus with mircrocavity
10/31/2000US6140705 Self-aligned contact through a conducting layer
10/31/2000US6140704 Integrated circuit memory devices with improved twisted bit-line structures
10/31/2000US6140697 Semiconductor device
10/31/2000US6140694 Field isolated integrated injection logic gate
10/31/2000US6140690 Semiconductor device
10/31/2000US6140688 Semiconductor device with self-aligned metal-containing gate
10/31/2000US6140686 Semiconductor integrated circuit device
10/31/2000US6140685 Static memory cell and method of manufacturing a static memory cell
10/31/2000US6140684 SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
10/31/2000US6140683 Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
10/31/2000US6140682 Self protected stacked NMOS with non-silicided region to protect mixed-voltage I/O pad from ESD damage
10/31/2000US6140681 Electrostatic discharge protection circuit
10/31/2000US6140680 Integrated power semiconductor transistor with current sensing
10/31/2000US6140678 Trench-gated power MOSFET with protective diode
10/31/2000US6140675 Semiconductor device and manufacturing method thereof
10/31/2000US6140674 Buried trench capacitor
10/31/2000US6140673 Semiconductor memory device and fabricating method
10/31/2000US6140672 Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor
10/31/2000US6140671 Semiconductor memory device having capacitive storage therefor
10/31/2000US6140668 Silicon structures having an absorption layer
10/31/2000US6140667 Semiconductor thin film in semiconductor device having grain boundaries
10/31/2000US6140630 Vcc pump for CMOS imagers
10/31/2000US6140213 Semiconductor wafer and method of manufacturing same
10/31/2000US6140210 Method of fabricating an SOI wafer and SOI wafer fabricated thereby
10/31/2000US6140209 Process for forming an SOI substrate
10/31/2000US6140204 Process for producing a semiconductor device having hemispherical grains (HSG)
10/31/2000US6140199 Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method
10/31/2000US6140198 Method of fabricating load resistor
10/31/2000US6140197 Method of making spiral-type RF inductors having a high quality factor (Q)
10/31/2000US6140189 Method for fabricating a LOCOS MOS device for ESD protection
10/31/2000US6140188 Semiconductor device having load device with trench isolation region and fabrication thereof
10/31/2000US6140185 Method of manufacturing semiconductor device
10/31/2000US6140184 Method of changing the power dissipation across an array of transistors
10/31/2000US6140183 Method of fabricating semiconductor device
10/31/2000US6140182 Nonvolatile memory with self-aligned floating gate and fabrication process
10/31/2000US6140180 Method of fabricating storage capacitor for dynamic random-access memory
10/31/2000US6140179 Method of forming a crown capacitor for a DRAM cell
10/31/2000US6140176 Method and fabricating a self-aligned node contact window
10/31/2000US6140174 Methods of forming wiring layers on integrated circuits including regions of high and low topography
10/31/2000US6140173 Method of manufacturing a semiconductor device comprising a ferroelectric memory element
10/31/2000US6140172 Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs and integrated circuitry
10/31/2000US6140170 Manufacture of complementary MOS and bipolar integrated circuits
10/31/2000US6140166 Method for manufacturing semiconductor and method for manufacturing semiconductor device
10/31/2000US6140161 Semiconductor integrated circuit device and method for making the same
10/31/2000US6140160 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
10/31/2000US6140159 Method for activating an ohmic layer for a thin film transistor
10/31/2000US6140152 Power module with lowered inductance and reduced voltage overshoots
10/31/2000US6140147 Method for driving solid-state imaging device
10/31/2000US6140145 At least two epitaxial hgcdte sensors on integrated silicon or gaas circuitry.
10/31/2000US6140009 Heat exchangers for electroluminescent device formed by positioning the transfer layer on receptor substrate and heat exchanging
10/31/2000US6139971 In order to improve adhesion between the platinum layer and the substrate, the structure has an intermediate layer of amorphous aluminum oxide.
10/31/2000US6139780 A cobalt or gallium or iron ions doped barium strontium titinate dielectrics stable to reducing atmosphere
10/31/2000US6138606 Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility
10/31/2000CA2107676C A single transistor non-volatile electrically alterable semiconductor memory device
10/28/2000CA2306687A1 Opto-electronic transmitter-receiver with reduced video crosstalk
10/26/2000WO2000064146A2 Flat image acquisition system
10/26/2000WO2000063973A1 Msm optical detector with an active region heterojunction forming a two-dimensional electron gas
10/26/2000WO2000063972A1 Semiconductor component
10/26/2000WO2000063971A1 Device for protecting against electrostatic discharge
10/26/2000WO2000063964A2 Cmos process
10/26/2000WO2000063954A1 Surface finishing of soi substrates using an epi process
10/26/2000WO2000063928A1 Ultra-small resistor-capacitor thin film network for inverted mounting to a surface
10/26/2000WO2000063836A1 Integrated circuit device which is secured against attacks resulting from controlled destruction of an additional layer
10/26/2000WO2000063654A1 Integrated optoelectronic thin-film sensor and method of producing same
10/26/2000WO2000039821A3 Improved layout technique for a matching capacitor array using a continuous upper electrode
10/26/2000DE19961061A1 Semiconductor device for switching has silicon on insulator construction with MOS transistor circuit configuration
10/26/2000DE19960234A1 Diode manufacturing method, has buried p semiconductor barrier which is provided at head surface of semiconductor substrate.
10/26/2000DE19936606C1 Integrated circuit voltage supply via pad e.g. for microprocessors and microcontrollers
10/26/2000DE19929210C1 Substrate used as a SOI substrate comprises a layer of monocrystalline silicon, a silicon dioxide layer and a silicon substrate
10/26/2000DE19917950A1 Integrated optoelectronic thin film sensor, useful for scale scanning in a length, angle or two-dimensional measuring system, has a semiconductor layer of thickness corresponding to that of the detecting region of photodetectors
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