Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
09/2000
09/19/2000US6121660 Channel etch type bottom gate semiconductor device
09/19/2000US6121659 Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
09/19/2000US6121658 Deep mesa isolation
09/19/2000US6121657 Semiconductor integrated circuit device having gates arranged in a lattice
09/19/2000US6121656 Semiconductor memory device mounted with a light emitting device
09/19/2000US6121655 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
09/19/2000US6121654 Memory device having a crested tunnel barrier
09/19/2000US6121653 Dram capacitor arrays with 3-capacitor and 6-capacitor geometries
09/19/2000US6121652 Semiconductor device including active matrix circuit
09/19/2000US6121651 Dram cell with three-sided-gate transfer device
09/19/2000US6121650 Semiconductor memory device with increased charge retention capacity and method for forming the same
09/19/2000US6121649 Semiconductor device with ferroelectric capacitors
09/19/2000US6121648 Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing
09/19/2000US6121645 Noise-reducing circuit
09/19/2000US6121644 Semiconductor integrated circuit device and method of arranging and wiring cells
09/19/2000US6121643 Semiconductor device having a group of high performance transistors and method of manufacture thereof
09/19/2000US6121642 Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
09/19/2000US6121640 Monolithically integrated device with protective structure
09/19/2000US6121632 Thin-film transistor array and method for manufacturing same
09/19/2000US6121157 Semiconductor device and its manufacture
09/19/2000US6121153 Semiconductors with crystallization and dopes of mixtures of gallium arsenide with aluminum or indium
09/19/2000US6121119 Resistor fabrication
09/19/2000US6121116 Flash memory device isolation method and structure
09/19/2000US6121115 Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers
09/19/2000US6121105 Inverted thin film resistor and method of manufacture
09/19/2000US6121101 Process for fabricating bipolar and BiCMOS devices
09/19/2000US6121097 Semiconductor device manufacturing method
09/19/2000US6121092 Silicide blocking process to form non-silicided regions on MOS devices
09/19/2000US6121087 Integrated circuit device with embedded flash memory and method for manufacturing same
09/19/2000US6121086 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
09/19/2000US6121083 Fabrication of semiconductors from multilayer insulating films
09/19/2000US6121080 Electronic discharge protective circuit for DRAM
09/19/2000US6121079 Method for manufacturing a semiconductor memory device
09/19/2000US6121078 Integrated circuit planarization and fill biasing design method
09/19/2000US6121076 Method for producing semiconductor device
09/19/2000US6121075 Fabrication of two-dimensionally arrayed quantum device
09/19/2000US6121074 Fuse layout for improved fuse blow process window
09/19/2000US6121072 Method of fabricating nonvolatile memory device
09/19/2000US6120912 Thin film made by annealing an applied coating solution of metal alkoxides of bismuth, a specified metallic elements a and b respectively, which contains composite metal alkoxides formed by any two or more metal alkoxides
09/19/2000US6120846 Simultaneously exposing insulating portion and electrically conductive portion of substrate to chemical vapor deposition process; during procedure selectively depositing bismuth based ferroelectric thin film on electrically conductive portion
09/19/2000US6120338 Method of manufacturing organic el display
09/19/2000US6120159 Combined display panel
09/14/2000WO2000054373A1 Display device
09/14/2000WO2000054338A1 High speed ge channel heterostructures for field effect devices
09/14/2000WO2000054337A1 Apparatus and method for an integrated circuit having high q reactive components
09/14/2000WO2000054335A1 Semiconductor device comprising a non-volatile memory
09/14/2000WO2000054334A1 Semiconductor read-only memory device with substrate contact and polysilicon bridging cells
09/14/2000WO2000054331A1 Methods of forming local interconnects and conductive lines, and resulting structure
09/14/2000WO2000054319A1 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
09/14/2000WO2000054318A1 Method for producing a microelectronic structure
09/14/2000WO2000054317A1 Improvements relating to annealing
09/14/2000WO1998036461A9 Optoelectronic semiconductor diodes and devices comprising same
09/14/2000DE19907174C1 Verfahren zum Herstellen einer DRAM-Zelle mit einem Grabenkondensator A method for manufacturing a DRAM cell capacitor having a grave
09/14/2000DE10006257A1 Field effect transistor has a channel layer containing a semiconducting inorganic-organic hybrid material between source and drain regions, a gate region and an electrically insulating layer
09/14/2000CA2362159A1 Apparatus and method for an integrated circuit having high q reactive components
09/13/2000EP1035653A2 Method and apparatus for high speed on-chip signal propagation
09/13/2000EP1035590A2 Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory
09/13/2000EP1035589A2 Iridium composite barrier structure and method for same
09/13/2000EP1035588A2 Iridium conductive electrode/barrier structure and method for same
09/13/2000EP1035582A2 Semiconductor device and method of manufacturing the same
09/13/2000EP1035575A2 Semiconductor device
09/13/2000EP1035567A2 A process for fabricating a device with shallow junctions
09/13/2000EP1034570A1 Dark current reducing guard ring
09/13/2000EP1034564A1 Process for fabricating semiconductor device including antireflective etch stop layer
09/13/2000EP1034563A1 High selectivity etching process for oxides
09/13/2000EP1034559A1 Active matrix organic light emitting diode with doped organic layer having increased thickness
09/13/2000EP0972287A4 High-efficiency miniature magnetic integrated circuit structures
09/13/2000EP0934649B1 Image signal sensing process
09/13/2000CN1266287A Thin film transistor using organic and inorganic hybridized material as semiconductive channel
09/13/2000CN1266286A RC semiconductor integrated circuit with MIS pulse protector
09/13/2000CN1266285A Refractory fuse circuit for packaged DRAM repair
09/13/2000CN1266282A Method for making semiconductor device
09/13/2000CN1266277A Method for forming bimetallic grid structure of CMOS device
09/13/2000CN1266276A Semiconductor device
09/13/2000CN1056473C Interconnection device for semiconductor component and making method
09/13/2000CN1056472C Method for production of capacitor of semiconductor device
09/12/2000US6119256 Apparatus for testing a fixed logic value interconnection between integrated circuits
09/12/2000US6119253 Method and device for setting a plurality of test modes using external pins
09/12/2000US6118937 Method of laying out a semiconductor integrated circuit
09/12/2000US6118892 Method for automatic detection of region of interest for digital x-ray detectors using a filtered histogram
09/12/2000US6118851 X-ray image pickup device
09/12/2000US6118723 Semiconductor memory device
09/12/2000US6118712 Redundancy fuse boxes and redundancy repair structures for semiconductor devices
09/12/2000US6118699 Semiconductor memory device using MONOS type nonvolatile memory cell
09/12/2000US6118696 Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same
09/12/2000US6118691 Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read
09/12/2000US6118687 Nonvolatile ferroelectric memory without a separate cell plate line and method of manufacturing the same
09/12/2000US6118686 Memory device
09/12/2000US6118683 Dynamic random access memory cell layout
09/12/2000US6118640 Actively-driven thin-oxide MOS transistor shunt for ESD protection of multiple independent supply busses in a mixed-signal chip
09/12/2000US6118624 Magneto-resistance effect element having a magnetic biasing film
09/12/2000US6118554 Image reading apparatus incorporating connector board for electrical connection and testing
09/12/2000US6118506 Electro-optical device and method of fabricating same
09/12/2000US6118481 Solid state image pick-up device and image pick-up apparatus
09/12/2000US6118351 Micromagnetic device for power processing applications and method of manufacture therefor
09/12/2000US6118328 Semiconductor integrated circuit having virtual power supply line and power control transistor
09/12/2000US6118305 Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film
09/12/2000US6118302 Interface for low-voltage semiconductor devices
09/12/2000US6118172 High-frequency circuit device and manufacturing method thereof
09/12/2000US6118170 Resistance element having flexing portion and its manufacturing method
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