Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/2000
10/26/2000DE10018358A1 Semiconductor component manufacturing method, involves separating insulating layer on semiconductor substrate and producing connection strip conductor connected with strip conductor layer of semiconductor elements in layer.
10/26/2000DE10013013A1 Chemical synthesized components, intersects pair of crossing conductors which form crossing which has function for measurement in nanometer range
10/26/2000CA2396377A1 Cmos process
10/26/2000CA2306002A1 Semiconductor memory cell
10/25/2000EP1047220A2 Adjustable data delay using programmable clock shift
10/25/2000EP1047134A2 Interconnection scheme for semiconductor storage device
10/25/2000EP1047133A1 Method for producing devices for control circuits integrated in power devices
10/25/2000EP1047132A1 Integrated circuit device with inductance of high quality factor
10/25/2000EP1047131A1 Electrostatic discharge protection device
10/25/2000EP1047130A1 Radio frequency semiconductor apparatus
10/25/2000EP1047128A2 Warped semiconductor device and method of manufacturing the same
10/25/2000EP1047127A2 A method of forming a multi-layered dual-polysilicon structure
10/25/2000EP1047117A2 Method for manufacturing a silicon nitride capacitor dielectric film
10/25/2000EP1046994A2 Efficient direct cell replacement fault tolerant architecture supporting completely integrated systems with means for direct communication with system operator
10/25/2000EP1046992A2 Semiconductor RAM with two level bus system
10/25/2000EP1046975A1 Device and a method of supplying power to plurality of semiconductor integrated circuit devices
10/25/2000EP1046193A1 An integrated circuit provided with esd protection means
10/25/2000EP1046049A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
10/25/2000EP1046045A2 Method for detecting a current of spin polarized electrons in a solid body
10/25/2000EP1046040A1 Electronic component
10/25/2000EP0846340B1 Switched magnetic field sensitive field effect transistor device
10/25/2000CN1271464A Electrode means, with or without functional elements and an electrode device including polymer material and an electrode device formed of saidmeans
10/25/2000CN1271181A Semicondutor device
10/25/2000CN1271180A Semiconductor device capacitor and its preparing method
10/25/2000CN1271179A Process for oxide corroding of high selective neck ring
10/24/2000US6137740 Semiconductor memory device configured with I/O separation
10/24/2000US6137731 Semiconductor memory including an intermediate potential circuit capable of providing reduced current flow
10/24/2000US6137728 Nonvolatile reprogrammable interconnect cell with programmable buried source/drain in sense transistor
10/24/2000US6137724 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
10/24/2000US6137723 Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
10/24/2000US6137722 Memory array having Frohmann-Bentchkowsky EPROM cells with a reduced number of access transistors
10/24/2000US6137721 Memory device having erasable frohmann-bentchkowsky EPROM cells that use a plate-to-floating gate coupled voltage during erasure
10/24/2000US6137718 Method for operating a non-volatile memory cell arrangement
10/24/2000US6137713 Semiconductor storage device
10/24/2000US6137671 Embedded energy storage device
10/24/2000US6137664 Well resistor for ESD protection of CMOS circuits
10/24/2000US6137634 Microlens array
10/24/2000US6137551 Liquid crystal display, thin film transistor array, and method of fabricating same with storage capacitor providing high aspect ratio
10/24/2000US6137535 Compact digital camera with segmented fields of view
10/24/2000US6137459 Image display device having a planarized array of reduced surface roughness
10/24/2000US6137347 Mid supply reference generator
10/24/2000US6137345 Semiconductor integrated circuit including a boosted potential generating circuit
10/24/2000US6137338 Low resistance input protection circuit
10/24/2000US6137330 Integrated circuit including functional blocks controlled by common synchronizing control transistors
10/24/2000US6137316 Integrated circuit with improved off chip drivers
10/24/2000US6137295 Method of detecting defect of integrated circuit and apparatus thereof
10/24/2000US6137221 Organic electroluminescent device with full color characteristics
10/24/2000US6137220 Organic electroluminescent display with protective film and trapezoidal walls
10/24/2000US6137177 CMOS semiconductor device
10/24/2000US6137156 Forming a low hydrogen content plasma silicon nitride film on which a high hydrogen content plasma silicon nitride film is laminated; blocking of hydrogen going toward and into the p-type silicon substrate by the low hydrogen content film
10/24/2000US6137154 Bipolar transistor with increased early voltage
10/24/2000US6137151 Amorphous silicon sensor array with reduced number of address lines
10/24/2000US6137147 Bipolar transistor and semiconductor integrated circuit device
10/24/2000US6137146 Bipolar transistor and method of forming BiCMOS circuitry
10/24/2000US6137144 On-chip ESD protection in dual voltage CMOS
10/24/2000US6137143 Diode and transistor design for high speed I/O
10/24/2000US6137142 MOS device structure and method for reducing PN junction leakage
10/24/2000US6137140 Integrated SCR-LDMOS power device
10/24/2000US6137137 CMOS semiconductor device comprising graded N-LDD junctions with increased HCI lifetime
10/24/2000US6137134 Semiconductor memory device
10/24/2000US6137133 Programmable non-volatile memory cell and method of forming a non-volatile memory cell
10/24/2000US6137132 High density buried bit line flash EEPROM memory cell with a shallow trench floating gate
10/24/2000US6137131 Dram cell with a multiple mushroom-shaped capacitor
10/24/2000US6137129 High performance direct coupled FET memory cell
10/24/2000US6137128 Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
10/24/2000US6137127 Low leakage active pixel using spacer protective mask compatible with CMOS process
10/24/2000US6137120 Semiconductor device and method of fabricating the same
10/24/2000US6137119 Apparatus for isolating a conductive region from a substrate during manufacture of an integrated circuit and connecting the conductive region to the substrate after manufacture
10/24/2000US6136972 Preparation of a mannich base intermediate for 2-[(4-heterocyclic-phenoxymethyl)-phenoxy]-alkanoates
10/24/2000US6136716 Method for manufacturing a self-aligned stacked storage node DRAM cell
10/24/2000US6136683 Semiconductor device and method for production thereof
10/24/2000US6136677 Forming a transition region separator between the logic area and the memory area; sequential steps forming silicide junctions in the logic area and implanted junctions in the memory area
10/24/2000US6136660 Stacked capacitator memory cell and method of fabrication
10/24/2000US6136659 Production process for a capacitor electrode formed of a platinum metal
10/24/2000US6136658 Method of fabricating a semiconductor device including a contact hole between gate electrode structures
10/24/2000US6136657 Method for fabricating a semiconductor device having different gate oxide layers
10/24/2000US6136655 Method of making low voltage active body semiconductor device
10/24/2000US6136653 Method and device for producing undercut gate for flash memory
10/24/2000US6136652 Preventing dielectric thickening over a channel area of a split-gate transistor
10/24/2000US6136651 Forming field oxide layer to contain bird beaks extending from each region and merging to protect portion of silicon substrate not covered by polysilicon layer from being etched
10/24/2000US6136650 Method of forming three-dimensional flash memory structure
10/24/2000US6136648 Forming isolation film by selectively oxidizing layer of film constituting floating gate to form oxide film
10/24/2000US6136646 Method for manufacturing DRAM capacitor
10/24/2000US6136645 Fabrication method for semiconductor memory device
10/24/2000US6136642 Method of making a dynamic random access memory
10/24/2000US6136640 Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit
10/24/2000US6136639 Semiconductor memory device and method for fabricating the same
10/24/2000US6136638 Process technology architecture of embedded DRAM
10/24/2000US6136635 Method for forming a bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
10/24/2000US6136634 Method of manufacturing semiconductor resistors
10/24/2000US6136633 Trench-free buried contact for locos isolation
10/24/2000US6136629 Methods for forming a charge coupled devices including buried transmission gates
10/24/2000US6136627 High-resolution light-sensing and light-emitting diode array and fabrication method thereof
10/24/2000US6136625 Method of manufacturing an active matrix panel
10/24/2000US6136622 Organic EL device and method of manufacturing the same
10/24/2000US6136506 Epoxy resin obtained by extending chains of epoxy compound by an isocyanate compound having two isocyanate groups per molecule, an ultraviolet-curable resin having carboxyl group and an ethylenically unsaturated group, initiator
10/24/2000CA2179246C Polysilicon defined diffused resistor
10/19/2000WO2000062419A2 Mos variable gain amplifier
10/19/2000WO2000062395A1 Protective circuit for electronic modules, especially driver modules
10/19/2000WO2000062350A1 Multiple storage node full color active pixel sensors
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